2026 Marcel A. Verheijen: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	73	3890	3764	52	47	370	17393

Marcel A. Verheijen publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Marcel A. Verheijen sits on this spectrum.

50 publications 1,163+

This scientist: 370 publications — 73rd percentile

73% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Marcel A. Verheijen D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Marcel A. Verheijen sits on this spectrum.

40 D-Index 165+

This scientist: 73 D-Index — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Marcel A. Verheijen is affiliated with Eindhoven University of Technology in the Netherlands. Their research spans a range of topics within engineering, materials science, and physics and astronomy, with significant contributions in both fundamental and applied aspects of these fields.

The main fields of study for Marcel A. Verheijen include:

Engineering
Materials Science
Physics and Astronomy

The scientist's work further delves into specialized subfields, notably:

Materials Chemistry
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Biomedical Engineering
Renewable Energy, Sustainability and the Environment

Key research topics covered by Marcel A. Verheijen address various aspects of advanced materials and device engineering, including:

Nanowire Synthesis and Applications
2D Materials and Applications
Semiconductor materials and devices
Topological Materials and Phenomena
Catalytic Processes in Materials Science
Semiconductor Quantum Structures and Devices
Silicon Nanostructures and Photoluminescence

Marcel A. Verheijen has contributed to multiple research papers in prominent scientific venues. Some recent publications include:

Direct-bandgap emission from hexagonal Ge and SiGe alloys, 2020, Nature
Enhanced Self-Assembled Monolayer Surface Coverage by ALD NiO in p-i-n Perovskite Solar Cells, 2021, ACS Applied Materials & Interfaces
Retraction Note: Quantized Majorana conductance, 2021, Nature
Parity-preserving and magnetic field-resilient superconductivity in InSb nanowires with Sn shells, 2021, Science
Area-Selective Atomic Layer Deposition of Two-Dimensional WS₂ Nanolayers, 2020, ACS Materials Letters

The scientist frequently publishes in the following venues:

arXiv (Cornell University)
Nanotechnology
ACS Applied Nano Materials
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Zenodo (CERN European Organization for Nuclear Research)

Collaborative work features frequent co-authorship with researchers such as:

Erik P. A. M. Bakkers
W. M. M. Kessels
Jason Jung
Ageeth A. Bol
Wouter H. J. Peeters

Best Publications

Twinning superlattices in indium phosphide nanowires

Rienk E. Algra;Rienk E. Algra;Rienk E. Algra;Marcel A. Verheijen;Magnus T. Borgström;Magnus T. Borgström;Lou-Fé Feiner

784
Citations
Bright single-photon sources in bottom-up tailored nanowires.

Michael E Reimer;Gabriele Bulgarini;Nika Akopian;Moïra Hocevar

518
Citations
Single quantum dot nanowire LEDs.

Ethan D. Minot;Freek Kelkensberg;Maarten van Kouwen;Jorden A. van Dam

472
Citations
Direct-bandgap emission from hexagonal Ge and SiGe alloys

Elham M. T. Fadaly;Alain Dijkstra;Jens Renè Suckert;Dorian Ziss

365
Citations
Direct band gap Wurtzite gallium phosphide nanowires

S Simone Assali;I Ilaria Zardo;SR Sebastien Plissard;D Kriegner

360
Citations
Position-controlled [100] InP nanowire arrays

Jia Wang;Sébastien Plissard;Moïra Hocevar;Thuy T. T. Vu

335
Citations
High-efficiency humidity-stable planar perovskite solar cells based on atomic layer architecture

Dibyashree Koushik;Wiljan J. H. Verhees;Yinghuan Kuang;Sjoerd Veenstra

298
Citations
Epitaxy of advanced nanowire quantum devices

Sasa Gazibegovic;Sasa Gazibegovic;Diana Car;Diana Car;Hao Zhang;Stijn C. Balk

296
Citations
Difference between blocking and Néel temperatures in the exchange biased Fe3O4/CoO system.

P. J. van der Zaag;Y. Ijiri;Y. Ijiri;J. A. Borchers;L. F. Feiner

286
Citations
Growth kinetics of heterostructured GaP-GaAs nanowires.

Marcel A. Verheijen;George Immink;Thierry De Smet;Magnus T. Borgström

279
Citations
Epitaxial growth of InP nanowires on germanium.

Erik P. A. M. Bakkers;Jorden A. van Dam;Silvano De Franceschi;Leo P. Kouwenhoven

248
Citations
THE STRUCTURE OF DIFFERENT PHASES OF PURE C-70 CRYSTALS

M.A. Verheijen;H. Meekes;G.J.M. Meijer;P. Bennema

246
Citations
Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges

V. Zardetto;B.L. Williams;A. Perrotta;F. Di Giacomo

230
Citations
21.6%-Efficient Monolithic Perovskite/Cu(In,Ga)Se2 Tandem Solar Cells with Thin Conformal Hole Transport Layers for Integration on Rough Bottom Cell Surfaces

Marko Jošt;Tobias Bertram;Dibyashree Koushik;Jose A. Marquez

219
Citations
Critical Review of the Current Status of Thickness Measurements for Ultrathin SiO2 on Si, Part V: Results of a CCQM Pilot Study

M P. Seah;S J. Spencer;F Bensebaa;I Vickridge

216
Citations
Efficiency enhancement of InP nanowire solar cells by surface cleaning.

Y Yingchao Cui;J Jia Wang;SR Sebastien Plissard;SR Sebastien Plissard;A Alessandro Cavalli

206
Citations
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

Riikka L. Puurunen;Wilfried Vandervorst;Wim F. A. Besling;Olivier Richard

202
Citations
Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

G Gijs Dingemans;NM Nick Terlinden;MA Marcel Verheijen;van de Mcm Richard Sanden

200
Citations
Ultrahigh Capacitance Density for Multiple ALD-Grown MIM Capacitor Stacks in 3-D Silicon

J.H. Klootwijk;K.B. Jinesh;W. Dekkers;J.F. Verhoeven

199
Citations
Hexagonal silicon realized

Håkon Ikaros T. Hauge;Marcel A. Verheijen;Marcel A. Verheijen;Sonia Conesa-Boj;Tanja Etzelstorfer

198
Citations
Single quantum dot nanowire LEDs

Maarten van Kouwen;Ethan Minot;Freek Kelkensberg;Jorden van Dam

0
Citations