World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
16158
World Ranking
2353
National Ranking
394

Materials Science

D-Index
57
Citations
17039
World Ranking
7849
National Ranking
2278

Yanqing Wu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yanqing Wu sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 218 publications — 35th percentile

35% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yanqing Wu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yanqing Wu sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 53 D-Index — 66th percentile

66% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yanqing Wu is affiliated with Peking University in China and focuses on a range of topics within engineering and materials science. Their research specializes in the subfields of electrical and electronic engineering, materials chemistry, biomedical engineering, molecular biology, and computer networks and communications.

Yanqing Wu's research explores multiple topics including:

  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Thin-Film Transistor Technologies
  • Graphene research and applications

Yanqing Wu has published extensively, with a selection of recent papers demonstrating contributions across prominent scientific journals and proceedings. These recent publications include:

  • How to report and benchmark emerging field-effect transistors (2022), Nature Electronics
  • Reconfigurable Logic-in-Memory and Multilingual Artificial Synapses Based on 2D Heterostructures (2020), Advanced Functional Materials
  • A transverse tunnelling field-effect transistor made from a van der Waals heterostructure (2020), Nature Electronics
  • Double-Gate MoS2 Field-Effect Transistors with Full-Range Tunable Threshold Voltage for Multifunctional Logic Circuits (2021), Advanced Materials
  • Two-dimensional materials for future information technology: status and prospects (2024), Science China Information Sciences

Frequent publication venues for Yanqing Wu reflect their engagement with both applied and fundamental aspects of device physics and materials research. These venues include:

  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Nature Electronics
  • Advanced Materials
  • 2022 International Electron Devices Meeting (IEDM)

The scientist collaborates regularly with various researchers. Frequent co-authors include:

  • Qianlan Hu
  • Xuefei Li
  • Shenwu Zhu
  • Chengru Gu
  • Ru Huang

Yanqing Wu's work spans the broader fields of engineering and materials science, with over 118 publications categorized under engineering and 59 under materials science, reflecting a strong interdisciplinary approach focused on emerging materials and device technologies.

Best Publications

  • Tunable infrared plasmonic devices using graphene/insulator stacks

    Hugen Yan;Xuesong Li;Bhupesh Chandra;George Tulevski

  • Wafer-Scale Graphene Integrated Circuit

    Yu-Ming Lin;Alberto Valdes-Garcia;Shu-Jen Han;Damon B. Farmer

  • High-frequency, scaled graphene transistors on diamond-like carbon

    Yanqing Wu;Yu-ming Lin;Ageeth A. Bol;Keith A. Jenkins

  • Damping pathways of mid-infrared plasmons in graphene nanostructures

    Hugen Yan;Tony Low;Wenjuan Zhu;Yanqing Wu

  • The origins and limits of metal–graphene junction resistance

    Fengnian Xia;Vasili Perebeinos;Yu-ming Lin;Yanqing Wu

  • Element-Specific Magnetic Microscopy with Circularly Polarized X-rays

    J. Stöhr;Y. Wu;B. D. Hermsmeier;M. G. Samant

  • State-of-the-art graphene high-frequency electronics.

    Yanqing Wu;Keith A. Jenkins;Alberto Valdes-Garcia;Damon B. Farmer

  • Broadband Black-Phosphorus Photodetectors with High Responsivity.

    Mingqiang Huang;Mingliang Wang;Cheng Chen;Zongwei Ma

  • High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

    Y. Xuan;Y.Q. Wu;P.D. Ye

  • Multifunctional high-performance van der Waals heterostructures

    Mingqiang Huang;Shengman Li;Zhenfeng Zhang;Xiong Xiong

  • Unfolding grain size effects in barium titanate ferroelectric ceramics

    Yongqiang Tan;Jialiang Zhang;Yanqing Wu;Chunlei Wang

  • Nanometre-thin indium tin oxide for advanced high-performance electronics.

    Shengman Li;Mengchuan Tian;Qingguo Gao;Mengfei Wang

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y Q Wu;P. D. Ye;Michael A Capano;Yi Xuan

  • Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

    Yi Xuan;Y Q Wu;T Shen;Minghao Qi

  • InP-Based Transistor Fabrication

    Peide Ye;Zhiyuan Cheng;Yi Xuan;Yanqing Wu

  • Orbital magnetic moments of Co in multilayers with perpendicular magnetic anisotropy.

    D. Weller;Y. Wu;J. Stöhr;M. G. Samant

  • Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

    Y. Xuan;Y.Q. Wu;H.C. Lin;T. Shen

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y. Q. Wu;P. D. Ye;M.A. Capano;Y. Xuan

  • Three-terminal graphene negative differential resistance devices.

    Yanqing Wu;Damon B. Farmer;Wenjuan Zhu;Shu Jen Han

  • High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al 2 O 3 , HfO 2 and HfAlO as gate dielectrics

    Y. Xuan;Y.Q. Wu;T. Shen;T. Yang

Frequent Co-Authors

Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Phaedon Avouris
Phaedon Avouris IBM (United States)
Damon B. Farmer
Damon B. Farmer IBM (United States)
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Fengnian Xia
Fengnian Xia Yale University
Wenjuan Zhu
Wenjuan Zhu University of Illinois at Urbana-Champaign
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Keith A. Jenkins
Keith A. Jenkins IBM (United States)
Yi Xuan
Yi Xuan Purdue University West Lafayette
Alfred Grill
Alfred Grill IBM (United States)

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