World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
53
Citations
16158
World Ranking
2353
National Ranking
393

Materials Science

D-Index
57
Citations
17039
World Ranking
7851
National Ranking
2277

Overview

Yanqing Wu is affiliated with Peking University in China and focuses on a range of topics within engineering and materials science. Their research specializes in the subfields of electrical and electronic engineering, materials chemistry, biomedical engineering, molecular biology, and computer networks and communications.

Yanqing Wu's research explores multiple topics including:

  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Thin-Film Transistor Technologies
  • Graphene research and applications

Yanqing Wu has published extensively, with a selection of recent papers demonstrating contributions across prominent scientific journals and proceedings. These recent publications include:

  • How to report and benchmark emerging field-effect transistors (2022), Nature Electronics
  • Reconfigurable Logic-in-Memory and Multilingual Artificial Synapses Based on 2D Heterostructures (2020), Advanced Functional Materials
  • A transverse tunnelling field-effect transistor made from a van der Waals heterostructure (2020), Nature Electronics
  • Double-Gate MoS2 Field-Effect Transistors with Full-Range Tunable Threshold Voltage for Multifunctional Logic Circuits (2021), Advanced Materials
  • Two-dimensional materials for future information technology: status and prospects (2024), Science China Information Sciences

Frequent publication venues for Yanqing Wu reflect their engagement with both applied and fundamental aspects of device physics and materials research. These venues include:

  • IEEE Electron Device Letters
  • Applied Physics Letters
  • Nature Electronics
  • Advanced Materials
  • 2022 International Electron Devices Meeting (IEDM)

The scientist collaborates regularly with various researchers. Frequent co-authors include:

  • Qianlan Hu
  • Xuefei Li
  • Shenwu Zhu
  • Chengru Gu
  • Ru Huang

Yanqing Wu's work spans the broader fields of engineering and materials science, with over 118 publications categorized under engineering and 59 under materials science, reflecting a strong interdisciplinary approach focused on emerging materials and device technologies.

Best Publications

  • Tunable infrared plasmonic devices using graphene/insulator stacks

    Hugen Yan;Xuesong Li;Bhupesh Chandra;George Tulevski

  • Wafer-Scale Graphene Integrated Circuit

    Yu-Ming Lin;Alberto Valdes-Garcia;Shu-Jen Han;Damon B. Farmer

  • High-frequency, scaled graphene transistors on diamond-like carbon

    Yanqing Wu;Yu-ming Lin;Ageeth A. Bol;Keith A. Jenkins

  • Damping pathways of mid-infrared plasmons in graphene nanostructures

    Hugen Yan;Tony Low;Wenjuan Zhu;Yanqing Wu

  • The origins and limits of metal–graphene junction resistance

    Fengnian Xia;Vasili Perebeinos;Yu-ming Lin;Yanqing Wu

  • Element-Specific Magnetic Microscopy with Circularly Polarized X-rays

    J. Stöhr;Y. Wu;B. D. Hermsmeier;M. G. Samant

  • State-of-the-art graphene high-frequency electronics.

    Yanqing Wu;Keith A. Jenkins;Alberto Valdes-Garcia;Damon B. Farmer

  • Broadband Black-Phosphorus Photodetectors with High Responsivity.

    Mingqiang Huang;Mingliang Wang;Cheng Chen;Zongwei Ma

  • High-Performance Inversion-Type Enhancement-Mode InGaAs MOSFET With Maximum Drain Current Exceeding 1 A/mm

    Y. Xuan;Y.Q. Wu;P.D. Ye

  • Multifunctional high-performance van der Waals heterostructures

    Mingqiang Huang;Shengman Li;Zhenfeng Zhang;Xiong Xiong

  • Unfolding grain size effects in barium titanate ferroelectric ceramics

    Yongqiang Tan;Jialiang Zhang;Yanqing Wu;Chunlei Wang

  • Nanometre-thin indium tin oxide for advanced high-performance electronics.

    Shengman Li;Mengchuan Tian;Qingguo Gao;Mengfei Wang

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y Q Wu;P. D. Ye;Michael A Capano;Yi Xuan

  • Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

    Yi Xuan;Y Q Wu;T Shen;Minghao Qi

  • InP-Based Transistor Fabrication

    Peide Ye;Zhiyuan Cheng;Yi Xuan;Yanqing Wu

  • Orbital magnetic moments of Co in multilayers with perpendicular magnetic anisotropy.

    D. Weller;Y. Wu;J. Stöhr;M. G. Samant

  • Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

    Y. Xuan;Y.Q. Wu;H.C. Lin;T. Shen

  • Top-gated graphene field-effect-transistors formed by decomposition of SiC

    Y. Q. Wu;P. D. Ye;M.A. Capano;Y. Xuan

  • Three-terminal graphene negative differential resistance devices.

    Yanqing Wu;Damon B. Farmer;Wenjuan Zhu;Shu Jen Han

  • High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al 2 O 3 , HfO 2 and HfAlO as gate dielectrics

    Y. Xuan;Y.Q. Wu;T. Shen;T. Yang

Frequent Co-Authors

Peide D. Ye
Peide D. Ye Purdue University West Lafayette
Phaedon Avouris
Phaedon Avouris IBM (United States)
Damon B. Farmer
Damon B. Farmer IBM (United States)
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Fengnian Xia
Fengnian Xia Yale University
Wenjuan Zhu
Wenjuan Zhu University of Illinois at Urbana-Champaign
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Keith A. Jenkins
Keith A. Jenkins IBM (United States)
Yi Xuan
Yi Xuan Purdue University West Lafayette
Alfred Grill
Alfred Grill IBM (United States)

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