What is he best known for?
The fields of study he is best known for:
- Quantum mechanics
- Semiconductor
- Electron
Yanqing Wu mainly focuses on Optoelectronics, Graphene, Transistor, Nanotechnology and Gate dielectric.
His study in Optoelectronics is interdisciplinary in nature, drawing from both Analytical chemistry and Electronics.
His Graphene research integrates issues from Field-effect transistor, Electron mobility and Plasmon.
Yanqing Wu has included themes like Wafer, Layer, Dielectric layer, Buffer and Integrated circuit in his Transistor study.
His Nanotechnology course of study focuses on Graphite and Ballistic conduction, Mean free path, Thermal conduction and Contact resistance.
His Gate dielectric research is multidisciplinary, relying on both Transconductance, MOSFET, Threshold voltage, Biasing and Gate oxide.
His most cited work include:
- Tunable infrared plasmonic devices using graphene/insulator stacks (913 citations)
- Wafer-Scale Graphene Integrated Circuit (748 citations)
- High-frequency, scaled graphene transistors on diamond-like carbon (721 citations)
What are the main themes of his work throughout his whole career to date?
Optoelectronics, Transistor, Graphene, Dielectric and MOSFET are his primary areas of study.
The study incorporates disciplines such as Field-effect transistor, Gate dielectric, Nanotechnology and Transconductance in addition to Optoelectronics.
As part of the same scientific family, Yanqing Wu usually focuses on Transistor, concentrating on Electronics and intersecting with Molybdenum disulfide and Power gain.
The Graphene study which covers Condensed matter physics that intersects with Ballistic conduction and Contact resistance.
His Dielectric research is multidisciplinary, incorporating elements of Layer, Indium tin oxide, Noise and Breakdown voltage.
His research integrates issues of Gallium arsenide, Charge, Atomic layer deposition, CMOS and Gate oxide in his study of MOSFET.
He most often published in these fields:
- Optoelectronics (72.50%)
- Transistor (47.50%)
- Graphene (30.62%)
What were the highlights of his more recent work (between 2018-2021)?
- Optoelectronics (72.50%)
- Transistor (47.50%)
- Dielectric (27.50%)
In recent papers he was focusing on the following fields of study:
Yanqing Wu mainly investigates Optoelectronics, Transistor, Dielectric, Field-effect transistor and Heterojunction.
He combines subjects such as Radio frequency, Transconductance and Ambipolar diffusion with his study of Optoelectronics.
Yanqing Wu is interested in Saturation velocity, which is a field of Transistor.
His Dielectric research incorporates elements of Voltage, Threshold voltage, Bilayer graphene, Graphene and Contact resistance.
Yanqing Wu performs multidisciplinary studies into Graphene and Noise spectral density in his work.
Yanqing Wu usually deals with Field-effect transistor and limits it to topics linked to Bilayer and Resistive touchscreen.
Between 2018 and 2021, his most popular works were:
- Nanometre-thin indium tin oxide for advanced high-performance electronics. (28 citations)
- Nanometre-thin indium tin oxide for advanced high-performance electronics. (28 citations)
- Dual-Gated MoS2 Neuristor for Neuromorphic Computing (24 citations)
In his most recent research, the most cited papers focused on:
- Quantum mechanics
- Semiconductor
- Electron
His main research concerns Optoelectronics, Transistor, Heterojunction, Field-effect transistor and Dielectric.
His study in the field of Doping is also linked to topics like Ballistic limit.
He has researched Transistor in several fields, including Analytical chemistry, Current, Atomic layer deposition, Bending and Bent molecular geometry.
His study in Heterojunction is interdisciplinary in nature, drawing from both Semiconductor device and Quantum tunnelling.
His studies in Field-effect transistor integrate themes in fields like Electron mobility, Electric field, Semiconductor, Saturation velocity and Ballistic conduction.
The various areas that Yanqing Wu examines in his Dielectric study include Equivalent oxide thickness, Subthreshold slope, Nanometre, Semiconduction and Indium tin oxide.
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