2026 Yu-Ming Lin: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	70	4339	4201	47	46	201	33734

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

4339

4201

201

33734

Overview

Yu-Ming Lin is a researcher affiliated with Taiwan Semiconductor Manufacturing Company in Taiwan. Their work primarily focuses on the engineering and materials science fields, with a strong emphasis on electrical and electronic engineering, materials chemistry, and biomedical engineering.

The scientist has contributed extensively to the study and development of semiconductor materials and devices, ferroelectric and negative capacitance devices, as well as MXene and MAX phase materials. Other areas of research include ferroelectric and piezoelectric materials, thin-film transistor technologies, and ZnO doping and properties. Their work also covers topics related to advanced memory and neural computing.

Yu-Ming Lin has published papers in several prominent venues, including:

IEEE Electron Device Letters
IEEE Transactions on Electron Devices
arXiv (Cornell University)
Sensors
ACS Applied Electronic Materials

Frequent collaborators of Yu-Ming Lin include Yan-Kui Liang, Chun-Hsiung Lin, Edward Yi Chang, Huai-Ying Huang, and Sai Hooi Yeong.

Some of the recent papers published by Yu-Ming Lin are:

"ZrO₂-HfO₂ Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability," 2022, IEEE Electron Device Letters
"Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition," 2023, IEEE Transactions on Electron Devices
"Implementing a Hand Gesture Recognition System Based on Range-Doppler Map," 2022, Sensors
"Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride," 2023, ACS Applied Electronic Materials
"Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors With Excellent Electrical Characteristics," 2023, IEEE Electron Device Letters

Best Publications

Ultrafast graphene photodetector

Fengnian Xia;Thomas Mueller;Yu-ming Lin;Alberto Valdes-Garcia

3504
Citations
100-GHz Transistors from Wafer-Scale Epitaxial Graphene

Y.-M. Lin;C. Dimitrakopoulos;K. A. Jenkins;D. B. Farmer

3281
Citations
Graphene nano-ribbon electronics

Zhihong Chen;Yu-Ming Lin;Michael J. Rooks;Phaedon Avouris

1972
Citations
Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature.

Fengnian Xia;Damon B. Farmer;Yu-ming Lin;Phaedon Avouris

1573
Citations
Operation of Graphene Transistors at Gigahertz Frequencies

Yu-Ming Lin;Keith A. Jenkins;Alberto Valdes-Garcia;Joshua P. Small

1365
Citations
Operation of Graphene Transistors at GHz Frequencies

Yu-Ming Lin;Keith A. Jenkins;Alberto Valdes-Garcia;Joshua P. Small

1318
Citations
Wafer-Scale Graphene Integrated Circuit

Yu-Ming Lin;Alberto Valdes-Garcia;Shu-Jen Han;Damon B. Farmer

1147
Citations
High-frequency, scaled graphene transistors on diamond-like carbon

Yanqing Wu;Yu-ming Lin;Ageeth A. Bol;Keith A. Jenkins

1119
Citations
Band-to-band tunneling in carbon nanotube field-effect transistors.

J. Appenzeller;Y.-M. Lin;J. Knoch;Ph. Avouris

1114
Citations
The origins and limits of metal–graphene junction resistance

Fengnian Xia;Vasili Perebeinos;Yu-ming Lin;Yanqing Wu

994
Citations
The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

Zhihong Chen;Joerg Appenzeller;Joachim Knoch;Yu-ming Lin

879
Citations
An integrated logic circuit assembled on a single carbon nanotube.

Zhihong Chen;Joerg Appenzeller;Yu-Ming Lin;Jennifer Sippel-Oakley

742
Citations
Photocurrent imaging and efficient photon detection in a graphene transistor

Fengnian Xia;Thomas Mueller;Roksana Golizadeh-Mojarad;Marcus Freitag

740
Citations
Theoretical investigation of thermoelectric transport properties of cylindrical Bi nanowires

Yu-Ming Lin;Xiangzhong Sun;M. S. Dresselhaus

714
Citations
Chemical doping and electron-hole conduction asymmetry in graphene devices.

Damon B. Farmer;Roksana Golizadeh-Mojarad;Vasili Perebeinos;Yu-Ming Lin

625
Citations
High-performance carbon nanotube field-effect transistor with tunable polarities

Yu-Ming Lin;J. Appenzeller;J. Knoch;P. Avouris

621
Citations
State-of-the-art graphene high-frequency electronics.

Yanqing Wu;Keith A. Jenkins;Alberto Valdes-Garcia;Damon B. Farmer

544
Citations
Bismuth nanowire arrays: Synthesis and galvanomagnetic properties

J. Heremans;C. M. Thrush;Yu-Ming Lin;S. Cronin

525
Citations
Strong Suppression of Electrical Noise in Bilayer Graphene Nanodevices

Yu-Ming Lin;Phaedon Avouris

504
Citations
Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors

Damon B. Farmer;Hsin-Ying Chiu;Yu-Ming Lin;Keith A. Jenkins

486
Citations
Strong Suppression of Electrical Noise in Bilayer Graphene Nano Devices

Yu-Ming Lin;Phaedon Avouris

460
Citations