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D-Index
46
Citations
18093
World Ranking
5023
National Ranking
1424

Overview

Zhihong Chen is a researcher affiliated with Purdue University West Lafayette in the United States, specializing in engineering and materials science. Their academic work spans primarily electrical and electronic engineering as well as materials chemistry, with significant contributions to various subfields including electronic, optical and magnetic materials, biomedical engineering, and aerospace engineering.

The scientist's research focuses on advanced topics in two-dimensional (2D) materials and their applications. Other main areas of study include ferroelectric and negative capacitance devices, advanced memory and neural computing, electromagnetic wave absorption materials, advanced antenna and metasurface technologies, metamaterials and metasurfaces applications, and graphene research and applications.

Zhihong Chen has collaborated frequently with several researchers, including:

  • Joerg Appenzeller
  • Hao-Yu Lan
  • Punyashloka Debashis
  • Chin-Sheng Pang
  • Konghu Tian

Their publications appear often in venues such as:

  • ACS Nano
  • arXiv (Cornell University)
  • Journal of Colloid and Interface Science
  • Nature Electronics
  • IEEE Electron Device Letters

Among the recent papers authored or co-authored by the researcher are:

  • "Transistors based on two-dimensional materials for future integrated circuits," 2021, Nature Electronics
  • "How to report and benchmark emerging field-effect transistors," 2022, Nature Electronics
  • "Materials for interconnects," 2021, MRS Bulletin
  • "Memory applications from 2D materials," 2021, Applied Physics Reviews
  • "Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling," 2020, Journal of Applied Physics

Best Publications

  • Transparent, Conductive Carbon Nanotube Films

    Zhuangchun Wu;Zhihong Chen;Xu Du;Jonathan M. Logan

  • Carbon-based electronics.

    Phaedon Avouris;Zhihong Chen;Vasili Perebeinos

  • Graphene nano-ribbon electronics

    Zhihong Chen;Yu-Ming Lin;Michael J. Rooks;Phaedon Avouris

  • The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

    Zhihong Chen;Joerg Appenzeller;Joachim Knoch;Yu-ming Lin

  • Transistors based on two-dimensional materials for future integrated circuits

    Saptarshi Das;Amritanand Sebastian;Eric Pop;Connor J. McClellan

  • An integrated logic circuit assembled on a single carbon nanotube.

    Zhihong Chen;Joerg Appenzeller;Yu-Ming Lin;Jennifer Sippel-Oakley

  • Energy dissipation in graphene field-effect transistors.

    Marcus Freitag;Mathias Steiner;Yves Martin;Vasili Perebeinos

  • Length scaling of carbon nanotube transistors

    Aaron D. Franklin;Zhihong Chen

  • Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

    J. Appenzeller;Yu-Ming Lin;J. Knoch;Zhihong Chen

  • Bulk Separative Enrichment in Metallic or Semiconducting Single-Walled Carbon Nanotubes

    Zhihong Chen;Xu Du;Mao-Hua Du;C. Daniel Rancken

  • Electrical observation of subband formation in graphene nanoribbons

    Yu-Ming Lin;Vasili Perebeinos;Zhihong Chen;Phaedon Avouris

  • Enhanced electrical and thermal conduction in graphene-encapsulated copper nanowires.

    Ruchit Mehta;Sunny Chugh;Zhihong Chen

  • Dual stress liner for high performance sub-45nm gate length SOI CMOS manufacturing

    H.S. Yang;R. Malik;S. Narasimha;Y. Li

  • Electrically Tunable Bandgaps in Bilayer MoS2

    Tao Chu;Hesameddin Ilatikhameneh;Gerhard Klimeck;Rajib Rahman

  • High-performance dual-gate carbon nanotube FETs with 40-nm gate length

    Yu-Ming Lin;J. Appenzeller;Zhihong Chen;Zhi-Gang Chen

  • Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes.

    Yu-Ming Lin;Joerg Appenzeller;Joachim Knoch;Zhihong Chen

  • Length sorting cut single wall carbon nanotubes by high performance liquid chromatography

    Elaine Farkas;M Elizabeth Anderson;Zhihong Chen;Andrew G Rinzler

  • Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor

    Zhihong Chen;D. Farmer;Sheng Xu;R. Gordon

  • Decoupling graphene from SiC(0001) via oxidation

    S. Oida;F. R. McFeely;J. B. Hannon;R. M. Tromp

  • Atomically Controlled Tunable Doping in High-Performance WSe2 Devices

    Chin‐Sheng Pang;Terry Y. T. Hung;Ava Khosravi;Rafik Addou;Rafik Addou

  • Single Wall Carbon Nanotubes for p-Type Ohmic Contacts to GaN Light-Emitting Diodes

    K. Lee;Z. Wu;Z. Chen;F. Ren

Frequent Co-Authors

Joerg Appenzeller
Joerg Appenzeller Purdue University West Lafayette
Phaedon Avouris
Phaedon Avouris IBM (United States)
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Shu-Jen Han
Shu-Jen Han IBM (United States)
Aaron D. Franklin
Aaron D. Franklin Duke University
Andrew G. Rinzler
Andrew G. Rinzler University of Florida
Joachim Knoch
Joachim Knoch RWTH Aachen University
Rafik Addou
Rafik Addou The University of Texas at Dallas
Robert M. Wallace
Robert M. Wallace The University of Texas at Dallas
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette

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