World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
76
Citations
30846
World Ranking
634
National Ranking
284

Materials Science

D-Index
78
Citations
30977
World Ranking
2908
National Ranking
818

Research.com Recognitions

  • 2013 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the physics, technology, and modeling of one and twodimensional transistors and circuits

Overview

Joerg Appenzeller is affiliated with Purdue University West Lafayette in the United States. Their research primarily focuses on engineering and materials science with a substantial emphasis on electrical and electronic engineering as well as materials chemistry. Their work spans the fields of atomic and molecular physics, optics, electronic, optical, and magnetic materials, and artificial intelligence.

The scientist's main topics of work include:

  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Graphene research and applications
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design

Recent notable publications by Joerg Appenzeller feature studies on emerging transistor technologies and their applications in integrated circuits and secure systems. These include:

  • "Transistors based on two-dimensional materials for future integrated circuits," 2021, published in Nature Electronics
  • "Two-dimensional transistors with reconfigurable polarities for secure circuits," 2020, published in Nature Electronics
  • "How to report and benchmark emerging field-effect transistors," 2022, published in Nature Electronics
  • "Efficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr2Ge2Te6," 2020, published in Advanced Materials
  • "Memory applications from 2D materials," 2021, published in Applied Physics Reviews

The most frequent co-authors in Joerg Appenzeller's body of work include Zhihong Chen, Peng Wu, Hao-Yu Lan, Zheng Sun, and Chin-Sheng Pang. These collaborations highlight ongoing partnerships in advancing research in semiconductor and 2D material technologies.

Publication venues for their research are varied but show a strong presence in:

  • IEEE Transactions on Electron Devices
  • ACS Nano
  • arXiv (Cornell University)
  • Nature Electronics
  • ECS Meeting Abstracts

Joerg Appenzeller was recognized as a Fellow of the American Physical Society (APS) in 2013. This fellowship was awarded with the citation for pioneering contributions to the physics, technology, and modeling of one- and two-dimensional transistors and circuits.

Best Publications

  • High Performance Multilayer MoS2 Transistors with Scandium Contacts

    Saptarshi Das;Hong Yan Chen;Ashish Verma Penumatcha;Joerg Appenzeller

  • Carbon nanotubes as schottky barrier transistors.

    S. Heinze;J. Tersoff;R. Martel;V. Derycke

  • Carbon Nanotube Inter- and Intramolecular Logic Gates

    V. Derycke;R. Martel;J. Appenzeller;Ph. Avouris

  • Band-to-band tunneling in carbon nanotube field-effect transistors.

    J. Appenzeller;Y.-M. Lin;J. Knoch;Ph. Avouris

  • Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

    R. Martel;V. Derycke;C. Lavoie;J. Appenzeller

  • Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

    S. J. Wind;J. Appenzeller;R. Martel;V. Derycke

  • Carbon nanotube electronics

    P. Avouris;J. Appenzeller;R. Martel;S.J. Wind

  • Controlling doping and carrier injection in carbon nanotube transistors

    V. Derycke;R. Martel;J. Appenzeller;Ph. Avouris

  • The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

    Zhihong Chen;Joerg Appenzeller;Joachim Knoch;Yu-ming Lin

  • Transistors based on two-dimensional materials for future integrated circuits

    Saptarshi Das;Amritanand Sebastian;Eric Pop;Connor J. McClellan

  • An integrated logic circuit assembled on a single carbon nanotube.

    Zhihong Chen;Joerg Appenzeller;Yu-Ming Lin;Jennifer Sippel-Oakley

  • Field-modulated carrier transport in carbon nanotube transistors.

    J. Appenzeller;J. Knoch;V. Derycke;R. Martel

  • High-performance carbon nanotube field-effect transistor with tunable polarities

    Yu-Ming Lin;J. Appenzeller;J. Knoch;P. Avouris

  • Carbon Nanotubes for High-Performance Electronics—Progress and Prospect

    J. Appenzeller

  • WSe2 field effect transistors with enhanced ambipolar characteristics

    Saptarshi Das;Joerg Appenzeller

  • Toward Nanowire Electronics

    J. Appenzeller;J. Knoch;M.T. Bjork;H. Riel

  • Electric-field induced structural transition in vertical MoTe 2 - and Mo 1-x W x Te 2 -based resistive memories

    Feng Zhang;Huairuo Zhang;Sergiy Krylyuk;Cory A. Milligan

  • Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

    J. Appenzeller;Yu-Ming Lin;J. Knoch;Zhihong Chen

  • Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

    Angelica Azcatl;Xiaoye Qin;Abhijith Prakash;Chenxi Zhang

  • Screening and interlayer coupling in multilayer graphene field-effect transistors.

    Yang Sui;Joerg Appenzeller

  • Tunneling versus thermionic emission in one-dimensional semiconductors.

    J. Appenzeller;M. Radosavljević;J. Knoch;Ph. Avouris

Frequent Co-Authors

Phaedon Avouris
Phaedon Avouris IBM (United States)
Joachim Knoch
Joachim Knoch RWTH Aachen University
Zhihong Chen
Zhihong Chen Purdue University West Lafayette
Richard Martel
Richard Martel University of Montreal
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Vincent Derycke
Vincent Derycke University of Paris-Saclay
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Hans Lüth
Hans Lüth Forschungszentrum Jülich
Paul M. Solomon
Paul M. Solomon IBM (United States)
Marko Radosavljevic
Marko Radosavljevic Intel (United States)

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering, flexible learning options are essential. Many online programs now offer online colleges with frequent start dates, allowing learners to begin their studies at convenient times throughout the year.

In addition to traditional degrees, there are 6 month certificate programs that pay well. These accelerated courses can quickly boost specialized skills in areas like circuit design or renewable energy systems, helping graduates enter the workforce faster with competitive salaries.

For introverted professionals, careers in electronics and electrical engineering offer roles such as design engineer or systems analyst, which align well with the best introvert jobs. These positions often focus on independent problem-solving and detailed technical work, creating a comfortable career environment.

Furthermore, those interested in leadership roles can explore the best accelerated project management degree programs online. These degrees complement technical expertise with management skills essential for overseeing complex engineering projects.

Best Scientists Citing Joerg Appenzeller

Trending Scientists

Recently Published Articles