World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
76
Citations
30846
World Ranking
634
National Ranking
285

Materials Science

D-Index
78
Citations
30977
World Ranking
2906
National Ranking
816

Joerg Appenzeller publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Joerg Appenzeller sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 260 publications — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Joerg Appenzeller D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Joerg Appenzeller sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 76 D-Index — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2013 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the physics, technology, and modeling of one and twodimensional transistors and circuits

Overview

Joerg Appenzeller is affiliated with Purdue University West Lafayette in the United States. Their research primarily focuses on engineering and materials science with a substantial emphasis on electrical and electronic engineering as well as materials chemistry. Their work spans the fields of atomic and molecular physics, optics, electronic, optical, and magnetic materials, and artificial intelligence.

The scientist's main topics of work include:

  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Graphene research and applications
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Advancements in Semiconductor Devices and Circuit Design

Recent notable publications by Joerg Appenzeller feature studies on emerging transistor technologies and their applications in integrated circuits and secure systems. These include:

  • "Transistors based on two-dimensional materials for future integrated circuits," 2021, published in Nature Electronics
  • "Two-dimensional transistors with reconfigurable polarities for secure circuits," 2020, published in Nature Electronics
  • "How to report and benchmark emerging field-effect transistors," 2022, published in Nature Electronics
  • "Efficient Spin-Orbit Torque Switching of the Semiconducting Van Der Waals Ferromagnet Cr2Ge2Te6," 2020, published in Advanced Materials
  • "Memory applications from 2D materials," 2021, published in Applied Physics Reviews

The most frequent co-authors in Joerg Appenzeller's body of work include Zhihong Chen, Peng Wu, Hao-Yu Lan, Zheng Sun, and Chin-Sheng Pang. These collaborations highlight ongoing partnerships in advancing research in semiconductor and 2D material technologies.

Publication venues for their research are varied but show a strong presence in:

  • IEEE Transactions on Electron Devices
  • ACS Nano
  • arXiv (Cornell University)
  • Nature Electronics
  • ECS Meeting Abstracts

Joerg Appenzeller was recognized as a Fellow of the American Physical Society (APS) in 2013. This fellowship was awarded with the citation for pioneering contributions to the physics, technology, and modeling of one- and two-dimensional transistors and circuits.

Best Publications

  • High Performance Multilayer MoS2 Transistors with Scandium Contacts

    Saptarshi Das;Hong Yan Chen;Ashish Verma Penumatcha;Joerg Appenzeller

  • Carbon nanotubes as schottky barrier transistors.

    S. Heinze;J. Tersoff;R. Martel;V. Derycke

  • Carbon Nanotube Inter- and Intramolecular Logic Gates

    V. Derycke;R. Martel;J. Appenzeller;Ph. Avouris

  • Band-to-band tunneling in carbon nanotube field-effect transistors.

    J. Appenzeller;Y.-M. Lin;J. Knoch;Ph. Avouris

  • Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

    R. Martel;V. Derycke;C. Lavoie;J. Appenzeller

  • Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

    S. J. Wind;J. Appenzeller;R. Martel;V. Derycke

  • Carbon nanotube electronics

    P. Avouris;J. Appenzeller;R. Martel;S.J. Wind

  • Controlling doping and carrier injection in carbon nanotube transistors

    V. Derycke;R. Martel;J. Appenzeller;Ph. Avouris

  • The Role of Metal-Nanotube Contact in the Performance of Carbon Nanotube Field-Effect Transistors

    Zhihong Chen;Joerg Appenzeller;Joachim Knoch;Yu-ming Lin

  • Transistors based on two-dimensional materials for future integrated circuits

    Saptarshi Das;Amritanand Sebastian;Eric Pop;Connor J. McClellan

  • An integrated logic circuit assembled on a single carbon nanotube.

    Zhihong Chen;Joerg Appenzeller;Yu-Ming Lin;Jennifer Sippel-Oakley

  • Field-modulated carrier transport in carbon nanotube transistors.

    J. Appenzeller;J. Knoch;V. Derycke;R. Martel

  • High-performance carbon nanotube field-effect transistor with tunable polarities

    Yu-Ming Lin;J. Appenzeller;J. Knoch;P. Avouris

  • Carbon Nanotubes for High-Performance Electronics—Progress and Prospect

    J. Appenzeller

  • WSe2 field effect transistors with enhanced ambipolar characteristics

    Saptarshi Das;Joerg Appenzeller

  • Toward Nanowire Electronics

    J. Appenzeller;J. Knoch;M.T. Bjork;H. Riel

  • Electric-field induced structural transition in vertical MoTe 2 - and Mo 1-x W x Te 2 -based resistive memories

    Feng Zhang;Huairuo Zhang;Sergiy Krylyuk;Cory A. Milligan

  • Comparing carbon nanotube transistors - the ideal choice: a novel tunneling device design

    J. Appenzeller;Yu-Ming Lin;J. Knoch;Zhihong Chen

  • Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure.

    Angelica Azcatl;Xiaoye Qin;Abhijith Prakash;Chenxi Zhang

  • Screening and interlayer coupling in multilayer graphene field-effect transistors.

    Yang Sui;Joerg Appenzeller

  • Tunneling versus thermionic emission in one-dimensional semiconductors.

    J. Appenzeller;M. Radosavljević;J. Knoch;Ph. Avouris

Frequent Co-Authors

Phaedon Avouris
Phaedon Avouris IBM (United States)
Joachim Knoch
Joachim Knoch RWTH Aachen University
Zhihong Chen
Zhihong Chen Purdue University West Lafayette
Richard Martel
Richard Martel University of Montreal
Yu-Ming Lin
Yu-Ming Lin Taiwan Semiconductor Manufacturing Company (Taiwan)
Vincent Derycke
Vincent Derycke University of Paris-Saclay
Gerhard Klimeck
Gerhard Klimeck Purdue University West Lafayette
Hans Lüth
Hans Lüth Forschungszentrum Jülich
Paul M. Solomon
Paul M. Solomon IBM (United States)
Marko Radosavljevic
Marko Radosavljevic Intel (United States)

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Related Online Degrees & Career Pathways

For students pursuing Electronics and Electrical Engineering, flexible learning options are essential. Many online programs now offer online colleges with frequent start dates, allowing learners to begin their studies at convenient times throughout the year.

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For introverted professionals, careers in electronics and electrical engineering offer roles such as design engineer or systems analyst, which align well with the best introvert jobs. These positions often focus on independent problem-solving and detailed technical work, creating a comfortable career environment.

Furthermore, those interested in leadership roles can explore the best accelerated project management degree programs online. These degrees complement technical expertise with management skills essential for overseeing complex engineering projects.

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