World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
14185
World Ranking
1846
National Ranking
731

Materials Science

D-Index
58
Citations
14007
World Ranking
7609
National Ranking
1892

Paul M. Solomon publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Paul M. Solomon sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 264 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Paul M. Solomon D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Paul M. Solomon sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 58 D-Index — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 1999 - Fellow of American Physical Society (APS) Citation For work on the limits of small semiconductor devices
  • 1993 - IEEE Fellow For contributions to the theory of the scaling of semiconductor devices.

Overview

Paul M. Solomon is affiliated with IBM in the United States. Their primary field of study is Engineering, with significant contributions specifically in Electrical and Electronic Engineering. Additional subfields of study include Materials Chemistry, Artificial Intelligence, Biomedical Engineering, and Bioengineering.

Their research focuses extensively on Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, and Semiconductor materials and devices. They have also addressed topics such as Electronic and Structural Properties of Oxides, Nanowire Synthesis and Applications, Analytical Chemistry and Sensors, and CCD and CMOS Imaging Sensors.

Paul M. Solomon has published multiple papers in notable venues, including:

  • "Ion sensing with single charge resolution using sub-10-nm electrical double layer-gated silicon nanowire transistors," 2021, Science Advances
  • "Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Nanotransistor-based gas sensing with record-high sensitivity enabled by electron trapping effect in nanoparticles," 2024, Nature Communications
  • "Neural network learning using non-ideal resistive memory devices," 2022, Frontiers in Nanotechnology
  • "Impact of Phase-Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large-Scale Deep Learning Networks," 2022, Advanced Intelligent Systems

They frequently publish in venues such as Nature Communications, arXiv (Cornell University), Science Advances, 2022 International Electron Devices Meeting (IEDM), and Frontiers in Nanotechnology.

Among frequent co-authors are:

  • Vijay Narayanan
  • Malte J. Rasch
  • Zhen Zhang
  • Nanbo Gong
  • Kevin Brew

Paul M. Solomon has been recognized with professional honors including:

  • Fellow of American Physical Society (APS), awarded in 1999 with a citation for work on the limits of small semiconductor devices
  • IEEE Fellow, awarded in 1993 for contributions to the theory of the scaling of semiconductor devices

Best Publications

  • Device scaling limits of Si MOSFETs and their application dependencies

    D.J. Frank;R.H. Dennard;E. Nowak;P.M. Solomon

  • An integrated logic circuit assembled on a single carbon nanotube.

    Zhihong Chen;Joerg Appenzeller;Yu-Ming Lin;Jennifer Sippel-Oakley

  • Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

    M. V. Fischetti;Z. Ren;P. M. Solomon;M. Yang

  • Nanoscale CMOS

    H.-S.P. Wong;D.J. Frank;P.M. Solomon;C.H.J. Wann

  • Silicon CMOS devices beyond scaling

    W. Haensch;E. J. Nowak;R. H. Dennard;P. M. Solomon

  • Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation

    H.-S.P. Wong;D.J. Frank;P.M. Solomon

  • Coupled electron-hole transport

    U. Sivan;P. M. Solomon;H. Shtrikman

  • It's time to reinvent the transistor!

    Thomas N. Theis;Paul M. Solomon

  • Method of forming vertical FET with nanowire channels and a silicided bottom contact

    Guy M. Cohen;Paul M. Solomon

  • In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

    T N Theis;P M Solomon

  • Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

    MeiKei Ieong;P.M. Solomon;S.E. Laux;H.-S.P. Wong

  • New phenomena in coupled transport between 2D and 3D electron-gas layers.

    P. M. Solomon;P. J. Price;D. J. Frank;D. C. La Tulipe

  • Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers

    P.M. Solomon;H. Morkoc

  • Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

    Zhen Zhang;F Pagette;C D'Emic;B Yang

  • Back-plane for semiconductor device

    Kevin Kok Chan;Christopher Peter D'Emic;Erin Catherine Jones;Paul Michael Solomon

  • Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors

    T. W. Hickmott;P. M. Solomon;R. Fischer;H. Morkoç

  • Ultra thin body fully-depleted soi mosfets

    Bruce B. Doris;Meikei Ieong;Zhibin Ren;Paul M. Solomon

  • Self-aligned bipolar transistors for high-performance and low-power-delay VLSI

    T.H. Ning;R.D. Isaac;P.M. Solomon;D.D.-L. Tang

  • Bipolar transistor design for optimized power-delay logic circuits

    Unknown

  • ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing

    Jianshi Tang;Douglas Bishop;Seyoung Kim;Matt Copel

  • Method of making a compound semiconductor having metallic inclusions

    Jeremy Burroughes;Rodney T. Hodgson;David T. McInturff;Michael R. Melloch

  • Evaluations and Considerations for Self-Assembled Monolayer Field-Effect Transistors

    C. R. Kagan;A. Afzali;R. Martel;L. M. Gignac

  • Universal tunneling behavior in technologically relevant P/N junction diodes

    Paul M. Solomon;Jason Jopling;David J. Frank;Chris D’Emic

Frequent Co-Authors

Kevin K. Chan
Kevin K. Chan IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Christian Lavoie
Christian Lavoie IBM (United States)
Guy M. Cohen
Guy M. Cohen IBM (United States)
David J. Frank
David J. Frank IBM (United States)
Kathryn W. Guarini
Kathryn W. Guarini IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
Phaedon Avouris
Phaedon Avouris IBM (United States)
Joachim Knoch
Joachim Knoch RWTH Aachen University
Joerg Appenzeller
Joerg Appenzeller Purdue University West Lafayette

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