World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
58
Citations
14185
World Ranking
1846
National Ranking
730

Materials Science

D-Index
58
Citations
14007
World Ranking
7611
National Ranking
1894

Research.com Recognitions

  • 1999 - Fellow of American Physical Society (APS) Citation For work on the limits of small semiconductor devices
  • 1993 - IEEE Fellow For contributions to the theory of the scaling of semiconductor devices.

Overview

Paul M. Solomon is affiliated with IBM in the United States. Their primary field of study is Engineering, with significant contributions specifically in Electrical and Electronic Engineering. Additional subfields of study include Materials Chemistry, Artificial Intelligence, Biomedical Engineering, and Bioengineering.

Their research focuses extensively on Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, and Semiconductor materials and devices. They have also addressed topics such as Electronic and Structural Properties of Oxides, Nanowire Synthesis and Applications, Analytical Chemistry and Sensors, and CCD and CMOS Imaging Sensors.

Paul M. Solomon has published multiple papers in notable venues, including:

  • "Ion sensing with single charge resolution using sub-10-nm electrical double layer-gated silicon nanowire transistors," 2021, Science Advances
  • "Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization," 2022, 2022 International Electron Devices Meeting (IEDM)
  • "Nanotransistor-based gas sensing with record-high sensitivity enabled by electron trapping effect in nanoparticles," 2024, Nature Communications
  • "Neural network learning using non-ideal resistive memory devices," 2022, Frontiers in Nanotechnology
  • "Impact of Phase-Change Memory Flicker Noise and Weight Drift on Analog Hardware Inference for Large-Scale Deep Learning Networks," 2022, Advanced Intelligent Systems

They frequently publish in venues such as Nature Communications, arXiv (Cornell University), Science Advances, 2022 International Electron Devices Meeting (IEDM), and Frontiers in Nanotechnology.

Among frequent co-authors are:

  • Vijay Narayanan
  • Malte J. Rasch
  • Zhen Zhang
  • Nanbo Gong
  • Kevin Brew

Paul M. Solomon has been recognized with professional honors including:

  • Fellow of American Physical Society (APS), awarded in 1999 with a citation for work on the limits of small semiconductor devices
  • IEEE Fellow, awarded in 1993 for contributions to the theory of the scaling of semiconductor devices

Best Publications

  • Device scaling limits of Si MOSFETs and their application dependencies

    D.J. Frank;R.H. Dennard;E. Nowak;P.M. Solomon

  • An integrated logic circuit assembled on a single carbon nanotube.

    Zhihong Chen;Joerg Appenzeller;Yu-Ming Lin;Jennifer Sippel-Oakley

  • Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness

    M. V. Fischetti;Z. Ren;P. M. Solomon;M. Yang

  • Nanoscale CMOS

    H.-S.P. Wong;D.J. Frank;P.M. Solomon;C.H.J. Wann

  • Silicon CMOS devices beyond scaling

    W. Haensch;E. J. Nowak;R. H. Dennard;P. M. Solomon

  • Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation

    H.-S.P. Wong;D.J. Frank;P.M. Solomon

  • Coupled electron-hole transport

    U. Sivan;P. M. Solomon;H. Shtrikman

  • It's time to reinvent the transistor!

    Thomas N. Theis;Paul M. Solomon

  • Method of forming vertical FET with nanowire channels and a silicided bottom contact

    Guy M. Cohen;Paul M. Solomon

  • In Quest of the “Next Switch”: Prospects for Greatly Reduced Power Dissipation in a Successor to the Silicon Field-Effect Transistor

    T N Theis;P M Solomon

  • Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model

    MeiKei Ieong;P.M. Solomon;S.E. Laux;H.-S.P. Wong

  • New phenomena in coupled transport between 2D and 3D electron-gas layers.

    P. M. Solomon;P. J. Price;D. J. Frank;D. C. La Tulipe

  • Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers

    P.M. Solomon;H. Morkoc

  • Sharp Reduction of Contact Resistivities by Effective Schottky Barrier Lowering With Silicides as Diffusion Sources

    Zhen Zhang;F Pagette;C D'Emic;B Yang

  • Back-plane for semiconductor device

    Kevin Kok Chan;Christopher Peter D'Emic;Erin Catherine Jones;Paul Michael Solomon

  • Negative charge, barrier heights, and the conduction‐band discontinuity in AlxGa1−xAs capacitors

    T. W. Hickmott;P. M. Solomon;R. Fischer;H. Morkoç

  • Ultra thin body fully-depleted soi mosfets

    Bruce B. Doris;Meikei Ieong;Zhibin Ren;Paul M. Solomon

  • Self-aligned bipolar transistors for high-performance and low-power-delay VLSI

    T.H. Ning;R.D. Isaac;P.M. Solomon;D.D.-L. Tang

  • Bipolar transistor design for optimized power-delay logic circuits

    Unknown

  • ECRAM as Scalable Synaptic Cell for High-Speed, Low-Power Neuromorphic Computing

    Jianshi Tang;Douglas Bishop;Seyoung Kim;Matt Copel

  • Method of making a compound semiconductor having metallic inclusions

    Jeremy Burroughes;Rodney T. Hodgson;David T. McInturff;Michael R. Melloch

  • Evaluations and Considerations for Self-Assembled Monolayer Field-Effect Transistors

    C. R. Kagan;A. Afzali;R. Martel;L. M. Gignac

  • Universal tunneling behavior in technologically relevant P/N junction diodes

    Paul M. Solomon;Jason Jopling;David J. Frank;Chris D’Emic

Frequent Co-Authors

Kevin K. Chan
Kevin K. Chan IBM (United States)
Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Christian Lavoie
Christian Lavoie IBM (United States)
Guy M. Cohen
Guy M. Cohen IBM (United States)
David J. Frank
David J. Frank IBM (United States)
Kathryn W. Guarini
Kathryn W. Guarini IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
Phaedon Avouris
Phaedon Avouris IBM (United States)
Joachim Knoch
Joachim Knoch RWTH Aachen University
Joerg Appenzeller
Joerg Appenzeller Purdue University West Lafayette

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