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Kathryn W. Guarini

Kathryn W. Guarini

D-Index & Metrics

Discipline name D-Index World Ranking National Ranking Publications Citations
Engineering and Technology 40 7161 1945 85 11378

Kathryn W. Guarini publications per year

The chart shows the history of publications by Kathryn W. Guarini between 1996 and 2011, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Kathryn W. Guarini published across 16 years, from 1996 to 2011, averaging 5.4 papers a year. Output peaked at 21 publications in 2001. 1 of the 87 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1996 to 2011. Vertical axis: number of publications, 0 to 21. Peak 21 publications in 2001. 1996: 1 publication 1997: 0 publications 1998: 0 publications 1999: 1 publication 2000: 1 publication 2001: 21 publications 2002: 8 publications 2003: 14 publications 2004: 14 publications 2005: 12 publications 2006: 8 publications 2007: 4 publications 2008: 1 publication 2009: 1 publication 2010: 0 publications 2011: 1 publication
1996 2011

87 publications in total across all disciplines

View publications per year as a table
Kathryn W. Guarini: publications per year, 1996 to 2011
Year Publications
1996 1
1997 0
1998 0
1999 1
2000 1
2001 21
2002 8
2003 14
2004 14
2005 12
2006 8
2007 4
2008 1
2009 1
2010 0
2011 1
Total 87
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Kathryn W. Guarini publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Kathryn W. Guarini sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: publications, 38–47 to 804+. Vertical axis: number of scientists, 0 to 457. Most scientists, 457, have 148–157 publications. The last bar groups every scientist with 804 publications or more. The highlighted bar, 78–87 publications, is where this scientist sits. 38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38–47 publications 804+

This scientist: 85 publications — 4th percentile

4% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

View publications distribution as a table
Number of Engineering and Technology scientists by publication count, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
Publications Scientists This scientist
38–47 20
48–57 35
58–67 96
68–77 135
78–87 190 85
88–97 259
98–107 283
108–117 369
118–127 341
128–137 386
138–147 372
148–157 457
158–167 415
168–177 407
178–187 421
188–197 378
198–207 403
208–217 317
218–227 346
228–237 321
238–247 260
248–257 280
258–267 240
268–277 214
278–287 242
288–297 203
298–307 166
308–317 154
318–327 175
328–337 159
338–347 99
348–357 131
358–367 106
368–377 118
378–387 97
388–397 108
398–407 82
408–417 71
418–427 64
428–437 55
438–447 54
448–457 60
458–467 47
468–477 40
478–487 30
488–497 29
498–507 38
508–517 40
518–527 32
528–537 23
538–547 28
548–557 23
558–567 19
568–577 16
578–587 17
588–597 18
598–607 22
608–617 15
618–627 9
628–637 11
638–647 21
648–657 12
658–667 9
668–677 11
678–687 9
688–697 6
698–707 14
708–717 7
718–727 8
728–737 10
738–747 9
748–757 5
758–767 5
768–777 11
778–787 7
788–797 2
798–803 4
804+ 100
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Kathryn W. Guarini D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Kathryn W. Guarini sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: D-Index, 30 to 107+. Vertical axis: number of scientists, 0 to 426. Most scientists, 426, have 42 D-Index. The last bar groups every scientist with 107 D-Index or more. The highlighted bar, 40 D-Index, is where this scientist sits. 30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 40 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

View D-Index distribution as a table
Number of Engineering and Technology scientists by D-index, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
D-Index Scientists This scientist
30 59
31 114
32 129
33 189
34 200
35 262
36 311
37 312
38 350
39 385
40 348 40
41 362
42 426
43 380
44 310
45 341
46 301
47 306
48 271
49 246
50 210
51 253
52 213
53 221
54 195
55 186
56 170
57 167
58 166
59 144
60 152
61 141
62 138
63 131
64 118
65 114
66 119
67 95
68 87
69 77
70 89
71 69
72 54
73 46
74 55
75 54
76 49
77 53
78 46
79 28
80 39
81 36
82 24
83 26
84 36
85 18
86 25
87 19
88 26
89 27
90 23
91 15
92 12
93 9
94 15
95 10
96 13
97 13
98 9
99 7
100 7
101 8
102 7
103 7
104 9
105 6
106 9
107+ 99
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Overview

What is she best known for?

The fields of study she is best known for:

  • Semiconductor
  • Integrated circuit
  • Silicon

Her primary scientific interests are in Nanotechnology, Optoelectronics, MOSFET, Electrical engineering and Thin film. Her study in Copolymer extends to Nanotechnology with its themes. The various areas that Kathryn W. Guarini examines in her Copolymer study include Nanostructure, Nanopore and Direct current.

Her Optoelectronics study combines topics in areas such as Layer, Substrate, Epitaxy, Electronic engineering and Crystal. Her work deals with themes such as CMOS, Gate oxide and Germanium, which intersect with MOSFET. Her Thin film study incorporates themes from Self-assembly and Wafer.

Her most cited work include:

  • Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates (1725 citations)
  • Stable SRAM cell design for the 32 nm node and beyond (531 citations)
  • Polymer self assembly in semiconductor microelectronics (407 citations)

What are the main themes of her work throughout her whole career to date?

Her scientific interests lie mostly in Optoelectronics, Nanotechnology, MOSFET, Semiconductor and CMOS. Her research investigates the connection between Optoelectronics and topics such as Electronic engineering that intersect with issues in Silicon. Her biological study spans a wide range of topics, including Copolymer, Non-volatile memory and Field-effect transistor.

While the research belongs to areas of Copolymer, Kathryn W. Guarini spends her time largely on the problem of Nanostructure, intersecting her research to questions surrounding Nanopore. Kathryn W. Guarini has researched MOSFET in several fields, including Dielectric, Gate oxide and Germanium. Her Semiconductor research includes elements of Wafer, Semiconductor device, Capacitance, Capacitor and Crystal orientation.

She most often published in these fields:

  • Optoelectronics (49.40%)
  • Nanotechnology (30.12%)
  • MOSFET (22.89%)

What were the highlights of her more recent work (between 2005-2011)?

  • Nanotechnology (30.12%)
  • Optoelectronics (49.40%)
  • Integrated circuit (14.46%)

In recent papers she was focusing on the following fields of study:

Kathryn W. Guarini focuses on Nanotechnology, Optoelectronics, Integrated circuit, Nanoparticle and Field-effect transistor. Her Nanotechnology study integrates concerns from other disciplines, such as Porosity, Lithography and Dielectric. Her study looks at the relationship between Optoelectronics and topics such as Layer, which overlap with Electrical conductor and Transistor.

The concepts of her Integrated circuit study are interwoven with issues in Computer hardware, Electronic engineering and Chip. Her work carried out in the field of Chip brings together such families of science as Integrated circuit layout, CMOS, Electronic circuit and Electrical element. Her biological study spans a wide range of topics, including Non-volatile memory and Semiconductor device.

Between 2005 and 2011, her most popular works were:

  • Polymer self assembly in semiconductor microelectronics (407 citations)
  • Germanium channel MOSFETs: opportunities and challenges (167 citations)
  • Nonvolatile memory device using semiconductor nanocrystals and method of forming same (133 citations)

In her most recent research, the most cited papers focused on:

  • Semiconductor
  • Integrated circuit
  • Transistor

Kathryn W. Guarini spends much of her time researching Nanotechnology, Scalability, Integrated circuit, Non-volatile memory and Semiconductor nanocrystals. Her research ties Lithography and Nanotechnology together. Electrical engineering, MOSFET, Germanium, Communication channel and Semiconductor device are fields of study that intersect with her Scalability study.

Her study in Integrated circuit is interdisciplinary in nature, drawing from both Silicon on insulator and CMOS. Her Non-volatile memory study incorporates themes from Field-effect transistor and Nanoparticle.

Best Publications

  • Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates

    T. Thurn-Albrecht;J. Schotter;G. A. Kästle;N. Emley

  • Three-dimensional integrated circuits

    A. W. Topol;D. C. La Tulipe;L. Shi;D. J. Frank

  • Stable SRAM cell design for the 32 nm node and beyond

    L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight

  • Polymer self assembly in semiconductor microelectronics

    C. T. Black;R. Ruiz;Gregory Breyta;J. Y. Cheng

  • Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication

    C. T. Black;K. W. Guarini;K. R. Milkove;S. M. Baker

  • Three dimensional integrated circuit and method of design

    Syed M. Alam;Ibrahim M. Elfadel;Kathryn W Guarini;Meikei Ieong

  • High performance CMOS fabricated on hybrid substrate with different crystal orientations

    M. Yang;M. Ieong;L. Shi;K. Chan

  • Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

    A.W. Topol;D.C. La Tulipe;L. Shi;S.M. Alam

  • Integration of strained Ge into advanced CMOS technology

    Huiling Shang;Meikei Ieong;Jack Oon Chu;Kathryn W. Guarini

  • Germanium channel MOSFETs: opportunities and challenges

    H. Shang;M. M. Frank;E. P. Gusev;J. O. Chu

  • Optimization of diblock copolymer thin film self assembly

    Kathryn W. Guarini;Charles T. Black;Stephanie H. I. Yeung

  • Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

    K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  • Nanoscale patterning using self-assembled polymers for semiconductor applications

    K. W. Guarini;C. T. Black;K. R. Milkove;R. L. Sandstrom

  • Block Copolymer Surface Reconstuction: A Reversible Route to Nanoporous Films†

    T. Xu;J. Stevens;J.A. Villa;J.T. Goldbach

  • Process integration of self-assembled polymer templates into silicon nanofabrication

    K. W. Guarini;C. T. Black;Y. Zhang;H. Kim

  • Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

    Huiling Shang;Kam-Leung Lee;P. Kozlowski;C. D'Emic

  • Nonvolatile memory device using semiconductor nanocrystals and method of forming same

    Charles T. Black;Kathryn Wilder Guarini

  • High-performance cmos soi device on hybrid crystal-oriented substrates

    Bruce B. Doris;Kathryn W. Guarini;Meikei Ieong;Shreesh Narasimha

  • High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors

    C.T. Black;K.W. Guarini;Ying Zhang;Hyungjun Kim

  • Two gates are better than one [double-gate MOSFET process]

    P.M. Solomon;K.W. Guarini;Y. Zhang;K. Chan

  • Polymer self assembly in semiconductor microelectronics

    C.T. Black;K.W. Guarini;R. Ruiz;E.M. Sikorski

Frequent Co-Authors

Charles T. Black
Charles T. Black Brookhaven National Laboratory
Meikei Ieong
Meikei Ieong Simbury Limited
Kevin K. Chan
Kevin K. Chan IBM (United States)
Paul M. Solomon
Paul M. Solomon IBM (United States)
Guy M. Cohen
Guy M. Cohen IBM (United States)
Christian Lavoie
Christian Lavoie IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
David J. Frank
David J. Frank IBM (United States)
Min Yang
Min Yang Sterne, Kessler, Goldstein & Fox

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