World's Best Scientists 2026 revealed!
Kathryn W. Guarini

Kathryn W. Guarini

D-Index & Metrics

Engineering and Technology

D-Index
40
Citations
11378
World Ranking
7158
National Ranking
1944

Overview

What is she best known for?

The fields of study she is best known for:

  • Semiconductor
  • Integrated circuit
  • Silicon

Her primary scientific interests are in Nanotechnology, Optoelectronics, MOSFET, Electrical engineering and Thin film. Her study in Copolymer extends to Nanotechnology with its themes. The various areas that Kathryn W. Guarini examines in her Copolymer study include Nanostructure, Nanopore and Direct current.

Her Optoelectronics study combines topics in areas such as Layer, Substrate, Epitaxy, Electronic engineering and Crystal. Her work deals with themes such as CMOS, Gate oxide and Germanium, which intersect with MOSFET. Her Thin film study incorporates themes from Self-assembly and Wafer.

Her most cited work include:

  • Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates (1725 citations)
  • Stable SRAM cell design for the 32 nm node and beyond (531 citations)
  • Polymer self assembly in semiconductor microelectronics (407 citations)

What are the main themes of her work throughout her whole career to date?

Her scientific interests lie mostly in Optoelectronics, Nanotechnology, MOSFET, Semiconductor and CMOS. Her research investigates the connection between Optoelectronics and topics such as Electronic engineering that intersect with issues in Silicon. Her biological study spans a wide range of topics, including Copolymer, Non-volatile memory and Field-effect transistor.

While the research belongs to areas of Copolymer, Kathryn W. Guarini spends her time largely on the problem of Nanostructure, intersecting her research to questions surrounding Nanopore. Kathryn W. Guarini has researched MOSFET in several fields, including Dielectric, Gate oxide and Germanium. Her Semiconductor research includes elements of Wafer, Semiconductor device, Capacitance, Capacitor and Crystal orientation.

She most often published in these fields:

  • Optoelectronics (49.40%)
  • Nanotechnology (30.12%)
  • MOSFET (22.89%)

What were the highlights of her more recent work (between 2005-2011)?

  • Nanotechnology (30.12%)
  • Optoelectronics (49.40%)
  • Integrated circuit (14.46%)

In recent papers she was focusing on the following fields of study:

Kathryn W. Guarini focuses on Nanotechnology, Optoelectronics, Integrated circuit, Nanoparticle and Field-effect transistor. Her Nanotechnology study integrates concerns from other disciplines, such as Porosity, Lithography and Dielectric. Her study looks at the relationship between Optoelectronics and topics such as Layer, which overlap with Electrical conductor and Transistor.

The concepts of her Integrated circuit study are interwoven with issues in Computer hardware, Electronic engineering and Chip. Her work carried out in the field of Chip brings together such families of science as Integrated circuit layout, CMOS, Electronic circuit and Electrical element. Her biological study spans a wide range of topics, including Non-volatile memory and Semiconductor device.

Between 2005 and 2011, her most popular works were:

  • Polymer self assembly in semiconductor microelectronics (407 citations)
  • Germanium channel MOSFETs: opportunities and challenges (167 citations)
  • Nonvolatile memory device using semiconductor nanocrystals and method of forming same (133 citations)

In her most recent research, the most cited papers focused on:

  • Semiconductor
  • Integrated circuit
  • Transistor

Kathryn W. Guarini spends much of her time researching Nanotechnology, Scalability, Integrated circuit, Non-volatile memory and Semiconductor nanocrystals. Her research ties Lithography and Nanotechnology together. Electrical engineering, MOSFET, Germanium, Communication channel and Semiconductor device are fields of study that intersect with her Scalability study.

Her study in Integrated circuit is interdisciplinary in nature, drawing from both Silicon on insulator and CMOS. Her Non-volatile memory study incorporates themes from Field-effect transistor and Nanoparticle.

Best Publications

  • Ultrahigh-Density Nanowire Arrays Grown in Self-Assembled Diblock Copolymer Templates

    T. Thurn-Albrecht;J. Schotter;G. A. Kästle;N. Emley

  • Three-dimensional integrated circuits

    A. W. Topol;D. C. La Tulipe;L. Shi;D. J. Frank

  • Stable SRAM cell design for the 32 nm node and beyond

    L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight

  • Polymer self assembly in semiconductor microelectronics

    C. T. Black;R. Ruiz;Gregory Breyta;J. Y. Cheng

  • Integration of self-assembled diblock copolymers for semiconductor capacitor fabrication

    C. T. Black;K. W. Guarini;K. R. Milkove;S. M. Baker

  • Three dimensional integrated circuit and method of design

    Syed M. Alam;Ibrahim M. Elfadel;Kathryn W Guarini;Meikei Ieong

  • High performance CMOS fabricated on hybrid substrate with different crystal orientations

    M. Yang;M. Ieong;L. Shi;K. Chan

  • Enabling SOI-based assembly technology for three-dimensional (3d) integrated circuits (ICs)

    A.W. Topol;D.C. La Tulipe;L. Shi;S.M. Alam

  • Integration of strained Ge into advanced CMOS technology

    Huiling Shang;Meikei Ieong;Jack Oon Chu;Kathryn W. Guarini

  • Germanium channel MOSFETs: opportunities and challenges

    H. Shang;M. M. Frank;E. P. Gusev;J. O. Chu

  • Optimization of diblock copolymer thin film self assembly

    Kathryn W. Guarini;Charles T. Black;Stephanie H. I. Yeung

  • Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

    K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  • Nanoscale patterning using self-assembled polymers for semiconductor applications

    K. W. Guarini;C. T. Black;K. R. Milkove;R. L. Sandstrom

  • Block Copolymer Surface Reconstuction: A Reversible Route to Nanoporous Films†

    T. Xu;J. Stevens;J.A. Villa;J.T. Goldbach

  • Process integration of self-assembled polymer templates into silicon nanofabrication

    K. W. Guarini;C. T. Black;Y. Zhang;H. Kim

  • Self-aligned n-channel germanium MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate

    Huiling Shang;Kam-Leung Lee;P. Kozlowski;C. D'Emic

  • Nonvolatile memory device using semiconductor nanocrystals and method of forming same

    Charles T. Black;Kathryn Wilder Guarini

  • High-performance cmos soi device on hybrid crystal-oriented substrates

    Bruce B. Doris;Kathryn W. Guarini;Meikei Ieong;Shreesh Narasimha

  • High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors

    C.T. Black;K.W. Guarini;Ying Zhang;Hyungjun Kim

  • Two gates are better than one [double-gate MOSFET process]

    P.M. Solomon;K.W. Guarini;Y. Zhang;K. Chan

  • Polymer self assembly in semiconductor microelectronics

    C.T. Black;K.W. Guarini;R. Ruiz;E.M. Sikorski

Frequent Co-Authors

Charles T. Black
Charles T. Black Brookhaven National Laboratory
Meikei Ieong
Meikei Ieong Simbury Limited
Kevin K. Chan
Kevin K. Chan IBM (United States)
Paul M. Solomon
Paul M. Solomon IBM (United States)
Guy M. Cohen
Guy M. Cohen IBM (United States)
Christian Lavoie
Christian Lavoie IBM (United States)
Cyril Cabral
Cyril Cabral IBM (United States)
Jeffrey W. Sleight
Jeffrey W. Sleight IBM (United States)
David J. Frank
David J. Frank IBM (United States)
Min Yang
Min Yang Sterne, Kessler, Goldstein & Fox

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Best Scientists Citing Kathryn W. Guarini