His primary scientific interests are in Optoelectronics, Electronic engineering, Layer, Silicon and Electrical engineering. He is studying Doping, which is a component of Optoelectronics. His study in Electronic engineering is interdisciplinary in nature, drawing from both Semiconductor materials, Semiconductor and MOSFET.
In the subject of general Layer, his work in Nitride is often linked to Anatase, thereby combining diverse domains of study. Kevin K. Chan interconnects Threshold voltage and Voltage in the investigation of issues within Silicon. His studies in Voltage integrate themes in fields like Quantum tunnelling and Nanostructure.
His scientific interests lie mostly in Optoelectronics, Layer, Electronic engineering, Silicon and Electrical engineering. His Optoelectronics research is multidisciplinary, incorporating perspectives in Substrate and Epitaxy. Kevin K. Chan combines subjects such as Oxide, Deposition and Base with his study of Layer.
His Electronic engineering study also includes
His primary areas of investigation include Optoelectronics, Semiconductor, Epitaxy, Common emitter and Electronic engineering. His Optoelectronics study combines topics in areas such as Layer and Transistor. His Epitaxy research is multidisciplinary, relying on both Trench, Structural engineering and Dielectric.
His work deals with themes such as Heterojunction bipolar transistor, Bipolar junction transistor, Pedestal and Base, which intersect with Common emitter. The study incorporates disciplines such as Metal gate, Semiconductor device, Silicon, Germanium and Metal in addition to Electronic engineering. His Silicon research incorporates themes from Ion implantation and Wafer.
His primary areas of investigation include Optoelectronics, Insulator, Bipolar junction transistor, Epitaxy and Common emitter. His Optoelectronics research is multidisciplinary, incorporating elements of Electronic engineering and Passivation. Kevin K. Chan studied Electronic engineering and Layer that intersect with Auger effect.
His research integrates issues of Semiconductor materials and Nanotechnology in his study of Insulator. His work focuses on many connections between Bipolar junction transistor and other disciplines, such as Germanium, that overlap with his field of interest in Oxide thin-film transistor and Thin-film transistor. His Common emitter study which covers Optics that intersects with Nucleation.
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A silicon nanocrystals based memory
Sandip Tiwari;Farhan Rana;Hussein Hanafi;Allan Hartstein.
Applied Physics Letters (1996)
Single charge and confinement effects in nano-crystal memories
Sandip Tiwari;Farhan Rana;Kevin Chan;Leathen Shi.
Applied Physics Letters (1996)
Volatile and non-volatile memories in silicon with nano-crystal storage
S. Tiwari;F. Rana;K. Chan;H. Hanafi.
international electron devices meeting (1995)
Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs
K. Rim;J. Chu;H. Chen;K.A. Jenkins.
symposium on vlsi technology (2002)
Method of fabricating self-aligned nanotube field effect transistor
Joerg Appenzeller;Phaedon Avouris;Kevin K. Chan;Philip G. Collins.
(2012)
High performance strained silicon finfets device and method for forming same
Stephen W. Bedell;Kevin K. Chan;Dureseti Chidambarrao;Silke H. Christiansen.
(2004)
Low temperature Bi-CMOS compatible process for MEMS RF resonators and filters
Leena Paivikki Buchwalter;Kevin Kok Chan;Timothy Joseph Dalton;Christopher Vincent Jahnes.
2002 Solid-State, Actuators, and Microsystems Workshop Technical Digest (2002)
Back-plane for semiconductor device
Kevin Kok Chan;Christopher Peter D'Emic;Erin Catherine Jones;Paul Michael Solomon.
(1999)
Fully-depleted SOI MOSFETs with low source and drain resistance and minimal overlap capacitance using a recessed channel damascene gate process
Hussein I. Hanafi;Diane C. Boyd;Kevin K. Chan;Wesley Natzle.
(2003)
Interfacial oxidation process for high-k gate dielectric process integration
Arne W. Ballantine;Douglas A. Buchanan;Eduard A. Cartier;Kevin K. Chan.
(2000)
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