World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
72
Citations
18627
World Ranking
814
National Ranking
349

Research.com Recognitions

  • 2012 - IEEE Fellow For contributions to metal?oxide?semiconductor field-effect transistor device physics and scaling

Overview

Wilfried Haensch is affiliated with IBM in the United States. Their research primarily concentrates on areas within engineering, particularly electrical and electronic engineering, with notable contributions to artificial intelligence and materials chemistry.

The main topics addressed in their work include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Machine Learning and ELM
  • Neuroscience and Neural Engineering
  • Neural dynamics and brain function
  • Phase-change materials and chalcogenides
  • CCD and CMOS Imaging Sensors

Their recent scientific papers include:

  • "Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective," 2022, Advanced Materials
  • "Ohm's Law + Kirchhoff's Current Law = Better AI: Neural-Network Processing Done in Memory with Analog Circuits will Save Energy," 2021, IEEE Spectrum
  • "Neural Network Training With Asymmetric Crosspoint Elements," 2022, Frontiers in Artificial Intelligence
  • "Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format," 2021, IEEE Transactions on Electron Devices
  • "Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning," 2021, IEEE Electron Device Letters

Haensch frequently collaborates with several co-authors, including Anand Raghunathan, Tayfun Gokmen, Charudatta Phatak, Supratik Guha, and Murat Onen.

Their publications are often featured in venues such as:

  • arXiv (Cornell University)
  • Frontiers in Artificial Intelligence
  • Advanced Materials
  • IEEE Spectrum
  • IEEE Transactions on Electron Devices

Among notable recognitions, Haensch received the IEEE Fellow award in 2012 for contributions to metal-oxide-semiconductor field-effect transistor device physics and scaling.

Best Publications

  • Sub-10 nm carbon nanotube transistor.

    Aaron D. Franklin;Mathieu Luisier;Shu-Jen Han;George Tulevski

  • Stable SRAM cell design for the 32 nm node and beyond

    L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight

  • High-performance CMOS variability in the 65-nm regime and beyond

    K. Bernstein;D. J. Frank;A. E. Gattiker;W. Haensch

  • Silicon CMOS devices beyond scaling

    W. Haensch;E. J. Nowak;R. H. Dennard;P. M. Solomon

  • Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics

    Qing Cao;Shu Jen Han;George S. Tulevski;Yu Zhu

  • An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches

    L. Chang;R.K. Montoye;Y. Nakamura;K.A. Batson

  • High-density integration of carbon nanotubes via chemical self-assembly

    Hongsik Park;Ali Afzali;Shu-Jen Han;George S. Tulevski

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Interconnects in the third dimension: design challenges for 3D ICs

    Kerry Bernstein;Paul Andry;Jerome Cann;Phil Emma

  • Toward High-Performance Digital Logic Technology With Carbon Nanotubes

    George S. Tulevski;Aaron D. Franklin;David Frank;Jose M. Lobez

  • Ultralow-voltage, minimum-energy CMOS

    S. Hanson;B. Zhai;K. Bernstein;D. Blaauw

  • Graphene radio frequency receiver integrated circuit

    Shu-Jen Han;Alberto Valdes Garcia;Satoshi Oida;Keith A. Jenkins

  • The effective drive current in CMOS inverters

    M.H. Na;E.J. Nowak;W. Haensch;J. Cai

  • High-Voltage Field Effect Transistors with Wide-Bandgap {eta}-Ga2O3 Nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Extreme scaling with ultra-thin Si channel MOSFETs

    B. Doris;Meikei Ieong;T. Kanarsky;Ying Zhang

  • Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

    J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

  • End-bonded contacts for carbon nanotube transistors with low, size-independent resistance.

    Qing Cao;Shu-Jen Han;Jerry Tersoff;Aaron D. Franklin

  • Fin field effect transistor devices with self-aligned source and drain regions

    Josephine Bea Chang;Michael Guillorn;Wilfried Ernst-August Haensch;Katherine Lynn Saenger

  • A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements

    C.-S. Lee;E. Pop;A. D. Franklin;W. Haensch

  • Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

    K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  • Practical Strategies for Power-Efficient Computing Technologies

    L. Chang;D.J. Frank;R.K. Montoye;S.J. Koester

Frequent Co-Authors

Shu-Jen Han
Shu-Jen Han IBM (United States)
Meikei Ieong
Meikei Ieong Simbury Limited
Aaron D. Franklin
Aaron D. Franklin Duke University
Paul M. Solomon
Paul M. Solomon IBM (United States)
Robert H. Dennard
Robert H. Dennard IBM (United States)
David J. Frank
David J. Frank IBM (United States)
Josephine B. Chang
Josephine B. Chang Northrop Grumman (United States)
Leland Chang
Leland Chang IBM Research - Thomas J. Watson Research Center
Steven J. Koester
Steven J. Koester University of Minnesota
Michael A. Guillorn
Michael A. Guillorn IBM (United States)

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