2012 - IEEE Fellow For contributions to metal?oxide?semiconductor field-effect transistor device physics and scaling
His primary scientific interests are in Optoelectronics, Electronic engineering, CMOS, Electrical engineering and Transistor. The Optoelectronics study combines topics in areas such as Subthreshold slope, MOSFET, Miniaturization, Gate dielectric and Gate oxide. His Electronic engineering study incorporates themes from Optical cross-connect and Interconnection.
The concepts of his CMOS study are interwoven with issues in Optical communications repeater, Optical transistor, Subthreshold conduction and Electronic circuit. His work investigates the relationship between Electrical engineering and topics such as Silicide that intersect with problems in Dopant, Electrical resistivity and conductivity, Metal–semiconductor junction, Doping and Schottky barrier. The Transistor study combines topics in areas such as Silicon and Nanotechnology, Carbon nanotube.
Wilfried Haensch mainly investigates Optoelectronics, Electrical engineering, Transistor, CMOS and Field-effect transistor. His biological study spans a wide range of topics, including Electronic engineering, Nanotechnology and MOSFET. His Electronic engineering research includes themes of Interconnection, Chip and Integrated circuit.
His Transistor research is multidisciplinary, relying on both Inverter and Contact resistance. Wilfried Haensch has included themes like Photonics, Silicon photonics and Computer hardware in his CMOS study. His Field-effect transistor research is multidisciplinary, incorporating perspectives in Wafer, Semiconductor, Quantum tunnelling, Substrate and Band gap.
Wilfried Haensch mainly focuses on Artificial neural network, Artificial intelligence, Deep learning, Optoelectronics and Resistive touchscreen. His work on CMOS, Silicon and Silicon photonics as part of general Optoelectronics study is frequently linked to Planar, bridging the gap between disciplines. His research integrates issues of Nanotechnology, Optical fiber, Wavelength-division multiplexing and Electronic circuit in his study of Silicon.
His Electronic engineering study combines topics from a wide range of disciplines, such as Field-effect transistor, Dram and Leakage. Wilfried Haensch interconnects Transistor and Electrical engineering in the investigation of issues within Coarse wavelength division multiplexing. His Electrical engineering research focuses on Node in particular.
His primary areas of study are Optoelectronics, CMOS, Transistor, Silicon and Silicon photonics. His work on Optical switch as part of general Optoelectronics study is frequently connected to Charge, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His CMOS research integrates issues from Resistive touchscreen, Embedded system, Waveguide and Massively parallel.
His Transistor research incorporates elements of Node, Semiconductor device, Carbon nanotube and Integrated circuit. Wilfried Haensch combines subjects such as Optical fiber, Nanotechnology and Electronic circuit with his study of Silicon. His study in Photonics is interdisciplinary in nature, drawing from both Coarse wavelength division multiplexing, Electronic engineering and Electrical engineering.
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Sub-10 nm carbon nanotube transistor.
Aaron D. Franklin;Mathieu Luisier;Shu-Jen Han;George Tulevski.
Nano Letters (2012)
Stable SRAM cell design for the 32 nm node and beyond
L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight.
symposium on vlsi technology (2005)
High-performance CMOS variability in the 65-nm regime and beyond
K. Bernstein;D. J. Frank;A. E. Gattiker;W. Haensch.
Ibm Journal of Research and Development (2006)
Silicon CMOS devices beyond scaling
W. Haensch;E. J. Nowak;R. H. Dennard;P. M. Solomon.
Ibm Journal of Research and Development (2006)
An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches
L. Chang;R.K. Montoye;Y. Nakamura;K.A. Batson.
IEEE Journal of Solid-state Circuits (2008)
Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics
Qing Cao;Shu Jen Han;George S. Tulevski;Yu Zhu.
Nature Nanotechnology (2013)
High-density integration of carbon nanotubes via chemical self-assembly
Hongsik Park;Ali Afzali;Shu-Jen Han;George S. Tulevski.
Nature Nanotechnology (2012)
Interconnects in the third dimension: design challenges for 3D ICs
Kerry Bernstein;Paul Andry;Jerome Cann;Phil Emma.
design automation conference (2007)
High-Voltage Field Effect Transistors with Wide-Bandgap {eta}-Ga2O3 Nanomembranes
Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko.
arXiv: Mesoscale and Nanoscale Physics (2013)
Ultralow-voltage, minimum-energy CMOS
S. Hanson;B. Zhai;K. Bernstein;D. Blaauw.
Ibm Journal of Research and Development (2006)
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