World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
72
Citations
18627
World Ranking
814
National Ranking
350

Wilfried Haensch publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Wilfried Haensch sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 285 publications — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Wilfried Haensch D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Wilfried Haensch sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 72 D-Index — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2012 - IEEE Fellow For contributions to metal?oxide?semiconductor field-effect transistor device physics and scaling

Overview

Wilfried Haensch is affiliated with IBM in the United States. Their research primarily concentrates on areas within engineering, particularly electrical and electronic engineering, with notable contributions to artificial intelligence and materials chemistry.

The main topics addressed in their work include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Machine Learning and ELM
  • Neuroscience and Neural Engineering
  • Neural dynamics and brain function
  • Phase-change materials and chalcogenides
  • CCD and CMOS Imaging Sensors

Their recent scientific papers include:

  • "Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective," 2022, Advanced Materials
  • "Ohm's Law + Kirchhoff's Current Law = Better AI: Neural-Network Processing Done in Memory with Analog Circuits will Save Energy," 2021, IEEE Spectrum
  • "Neural Network Training With Asymmetric Crosspoint Elements," 2022, Frontiers in Artificial Intelligence
  • "Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-Format," 2021, IEEE Transactions on Electron Devices
  • "Resistive Memory Process Optimization for High Resistance Switching Toward Scalable Analog Compute Technology for Deep Learning," 2021, IEEE Electron Device Letters

Haensch frequently collaborates with several co-authors, including Anand Raghunathan, Tayfun Gokmen, Charudatta Phatak, Supratik Guha, and Murat Onen.

Their publications are often featured in venues such as:

  • arXiv (Cornell University)
  • Frontiers in Artificial Intelligence
  • Advanced Materials
  • IEEE Spectrum
  • IEEE Transactions on Electron Devices

Among notable recognitions, Haensch received the IEEE Fellow award in 2012 for contributions to metal-oxide-semiconductor field-effect transistor device physics and scaling.

Best Publications

  • Sub-10 nm carbon nanotube transistor.

    Aaron D. Franklin;Mathieu Luisier;Shu-Jen Han;George Tulevski

  • Stable SRAM cell design for the 32 nm node and beyond

    L. Chang;D.M. Fried;J. Hergenrother;J.W. Sleight

  • High-performance CMOS variability in the 65-nm regime and beyond

    K. Bernstein;D. J. Frank;A. E. Gattiker;W. Haensch

  • Silicon CMOS devices beyond scaling

    W. Haensch;E. J. Nowak;R. H. Dennard;P. M. Solomon

  • Arrays of single-walled carbon nanotubes with full surface coverage for high-performance electronics

    Qing Cao;Shu Jen Han;George S. Tulevski;Yu Zhu

  • An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches

    L. Chang;R.K. Montoye;Y. Nakamura;K.A. Batson

  • High-density integration of carbon nanotubes via chemical self-assembly

    Hongsik Park;Ali Afzali;Shu-Jen Han;George S. Tulevski

  • High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Interconnects in the third dimension: design challenges for 3D ICs

    Kerry Bernstein;Paul Andry;Jerome Cann;Phil Emma

  • Toward High-Performance Digital Logic Technology With Carbon Nanotubes

    George S. Tulevski;Aaron D. Franklin;David Frank;Jose M. Lobez

  • Ultralow-voltage, minimum-energy CMOS

    S. Hanson;B. Zhai;K. Bernstein;D. Blaauw

  • Graphene radio frequency receiver integrated circuit

    Shu-Jen Han;Alberto Valdes Garcia;Satoshi Oida;Keith A. Jenkins

  • The effective drive current in CMOS inverters

    M.H. Na;E.J. Nowak;W. Haensch;J. Cai

  • High-Voltage Field Effect Transistors with Wide-Bandgap {eta}-Ga2O3 Nanomembranes

    Wan Sik Hwang;Amit Verma;Hartwin Peelaers;Vladimir Protasenko

  • Extreme scaling with ultra-thin Si channel MOSFETs

    B. Doris;Meikei Ieong;T. Kanarsky;Ying Zhang

  • Metal-gate FinFET and fully-depleted SOI devices using total gate silicidation

    J. Kedzierski;E. Nowak;T. Kanarsky;Y. Zhang

  • End-bonded contacts for carbon nanotube transistors with low, size-independent resistance.

    Qing Cao;Shu-Jen Han;Jerry Tersoff;Aaron D. Franklin

  • Fin field effect transistor devices with self-aligned source and drain regions

    Josephine Bea Chang;Michael Guillorn;Wilfried Ernst-August Haensch;Katherine Lynn Saenger

  • A Compact Virtual-Source Model for Carbon Nanotube FETs in the Sub-10-nm Regime—Part I: Intrinsic Elements

    C.-S. Lee;E. Pop;A. D. Franklin;W. Haensch

  • Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

    K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  • Practical Strategies for Power-Efficient Computing Technologies

    L. Chang;D.J. Frank;R.K. Montoye;S.J. Koester

Frequent Co-Authors

Shu-Jen Han
Shu-Jen Han IBM (United States)
Meikei Ieong
Meikei Ieong Simbury Limited
Aaron D. Franklin
Aaron D. Franklin Duke University
Paul M. Solomon
Paul M. Solomon IBM (United States)
Robert H. Dennard
Robert H. Dennard IBM (United States)
David J. Frank
David J. Frank IBM (United States)
Josephine B. Chang
Josephine B. Chang Northrop Grumman (United States)
Leland Chang
Leland Chang IBM Research - Thomas J. Watson Research Center
Steven J. Koester
Steven J. Koester University of Minnesota
Michael A. Guillorn
Michael A. Guillorn IBM (United States)

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