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Electronics and Electrical Engineering

D-Index
63
Citations
14935
World Ranking
1374
National Ranking
566

Materials Science

D-Index
63
Citations
14775
World Ranking
6151
National Ranking
1570

Research.com Recognitions

  • 2017 - IEEE Fellow For contributions to group-IV electronic and photonic devices

Overview

Steven J. Koester is affiliated with the University of Minnesota in the United States. Their research spans the fields of Materials Science and Engineering, with a particular focus on subfields such as Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Electronic, Optical and Magnetic Materials, and Atomic and Molecular Physics, and Optics.

The main topics of Steven J. Koester's work include:

  • 2D Materials and Applications
  • Electronic and Structural Properties of Oxides
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Ferroelectric and Piezoelectric Materials
  • Graphene research and applications
  • MXene and MAX Phase Materials

Notable recent papers authored or coauthored by Steven J. Koester are:

  • "Bandgap engineering of two-dimensional semiconductor materials," 2020, published in npj 2D Materials and Applications
  • "How to report and benchmark emerging field-effect transistors," 2022, published in Nature Electronics
  • "Nanophotonic biosensors harnessing van der Waals materials," 2021, published in Nature Communications
  • "3D printed self-supporting elastomeric structures for multifunctional microfluidics," 2020, published in Science Advances
  • "Thickness-dependent thermal conductivity of mechanically exfoliated β-Ga2O3 thin films," 2020, published in Applied Physics Letters

Frequent coauthors include:

  • Bharat Jalan
  • Jiaxuan Wen
  • Tony Low
  • Ruixue Li
  • Prafful Golani

Steven J. Koester has contributed extensively to several publication venues, the most common ones being:

  • arXiv (Cornell University)
  • ACS Nano
  • Applied Physics Letters
  • IEEE Electron Device Letters
  • ACS Applied Nano Materials

Steven J. Koester was awarded the IEEE Fellow distinction in 2017 for contributions to group-IV electronic and photonic devices.

Best Publications

  • Bandgap engineering of two-dimensional semiconductor materials

    A. Chaves;J. G. Azadani;Hussain Alsalman;Hussain Alsalman;D. R. da Costa

  • Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

    Nathan Youngblood;Che Chen;Steven J. Koester;Mo Li

  • Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching

    V. Ongun Özçelik;Javad G. Azadani;Ce Yang;Steven J. Koester

  • Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

    K. Rim;J. Chu;H. Chen;K.A. Jenkins

  • 3d integrated circuits structure

    Mukta G. Farooq;Subramanian S. Iyer;Steven J. Koester;Huilong Zhu

  • Interconnects in the third dimension: design challenges for 3D ICs

    Kerry Bernstein;Paul Andry;Jerome Cann;Phil Emma

  • Efficient electrical control of thin-film black phosphorus bandgap.

    Bingchen Deng;Vy Tran;Yujun Xie;Hao Jiang

  • Strained Si NMOSFETs for high performance CMOS technology

    K. Rim;S. Koester;M. Hargrove;J. Chu

  • Multifunctional Graphene Optical Modulator and Photodetector Integrated on Silicon Waveguides

    Nathan Youngblood;Yoska Anugrah;Rui Ma;Steven J. Koester

  • Optical absorption in graphene integrated on silicon waveguides

    Huan Li;Yoska Anugrah;Steven J. Koester;Mo Li

  • Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

    K. Rim;K. Chan;L. Shi;D. Boyd

  • Practical Strategies for Power-Efficient Computing Technologies

    L. Chang;D.J. Frank;R.K. Montoye;S.J. Koester

  • Wafer-level 3D integration technology

    S. J. Koester;A. M. Young;R. R. Yu;S. Purushothaman

  • High-speed waveguide-coupled graphene-on-graphene optical modulators

    Steven J. Koester;Mo Li

  • On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

    S O Koswatta;S J Koester;W Haensch

  • How to report and benchmark emerging field-effect transistors

    Unknown

  • High-speed Germanium-on-SOI lateral PIN photodiodes

    G. Dehlinger;S.J. Koester;J.D. Schaub;J.O. Chu

  • Germanium-on-SOI Infrared Detectors for Integrated Photonic Applications

    S.J. Koester;J.D. Schaub;G. Dehlinger;G. Dehlinger;J.O. Chu

  • Spin-Based Computing: Device Concepts, Current Status, and a Case Study on a High-Performance Microprocessor

    Jongyeon Kim;Ayan Paul;Paul A. Crowell;Steven J. Koester

  • Hafnium oxide gate dielectrics on sulfur-passivated germanium

    Martin M. Frank;Steven J. Koester;Matthew Copel;John A. Ott

  • On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors

    Siyuranga O. Koswatta;Steven J. Koester;Wilfried Haensch

Frequent Co-Authors

Wilfried Haensch
Wilfried Haensch Argonne National Laboratory
Patricia M. Mooney
Patricia M. Mooney Simon Fraser University
Subramanian S. Iyer
Subramanian S. Iyer University of California, Los Angeles
Devendra K. Sadana
Devendra K. Sadana IBM (United States)
Alfred Grill
Alfred Grill IBM (United States)
Sampath Purushothaman
Sampath Purushothaman IBM (United States)
Paul M. Solomon
Paul M. Solomon IBM (United States)
K. Andre Mkhoyan
K. Andre Mkhoyan University of Minnesota
John A. Ott
John A. Ott IBM (United States)
Mo Li
Mo Li University of Washington

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