His primary areas of study are Optoelectronics, Electronic engineering, Dielectric, Thin-film transistor and Transistor. His Optoelectronics research includes elements of Reactive-ion etching and Sputter deposition, Sputtering. The study incorporates disciplines such as Barrier layer, Layer and Substrate in addition to Electronic engineering.
His Dielectric research incorporates elements of Composite material and Line. The Thin-film transistor study combines topics in areas such as Field-effect transistor and Organic semiconductor. His biological study deals with issues like Semiconductor, which deal with fields such as Analytical chemistry, Molecular beam and Vacuum deposition.
Sampath Purushothaman focuses on Optoelectronics, Composite material, Dielectric, Layer and Electronic engineering. Dielectric layer is closely connected to Substrate in his research, which is encompassed under the umbrella topic of Optoelectronics. His work carried out in the field of Dielectric brings together such families of science as Resist, Porosity, Nanotechnology and Line.
Sampath Purushothaman combines subjects such as Semiconductor, Chemical engineering and Silicon with his study of Nanotechnology. His Layer study combines topics from a wide range of disciplines, such as Metallurgy, Metal and Noble metal. His study on Electronic engineering is mostly dedicated to connecting different topics, such as Barrier layer.
Sampath Purushothaman mainly investigates Optoelectronics, Dielectric, Wafer, Nanotechnology and Layer. His Optoelectronics study combines topics in areas such as Etching, Electronic engineering, Line and Substrate. The concepts of his Substrate study are interwoven with issues in Engineering drawing and Copper.
He interconnects Porosity and Semiconductor device fabrication in the investigation of issues within Dielectric. His research integrates issues of 3d integrated circuit and Process in his study of Wafer. His Nanotechnology research is multidisciplinary, relying on both Semiconductor, Silicon and Polymer.
His primary areas of investigation include Wafer, Porosity, Dielectric, Optoelectronics and Substrate. His Wafer course of study focuses on Layer and Engineering drawing. Porosity is a subfield of Composite material that Sampath Purushothaman investigates.
His Atomic layer deposition study, which is part of a larger body of work in Composite material, is frequently linked to Substrate, bridging the gap between disciplines. His studies deal with areas such as Electronic engineering, Tungsten and Adhesive bonding as well as Optoelectronics. As part of one scientific family, Sampath Purushothaman deals mainly with the area of Substrate, narrowing it down to issues related to the Polymer, and often Base and Coating.
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Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators
C. D. Dimitrakopoulos;S. Purushothaman;J. Kymissis;A. Callegari.
Atomic-beam alignment of inorganic materials for liquid-crystal displays
P. Chaudhari;James Lacey;James Doyle;Eileen Galligan.
High-performance bottom electrode organic thin-film transistors
I. Kymissis;C.D. Dimitrakopoulos;S. Purushothaman.
IEEE Transactions on Electron Devices (2001)
Liquid crystal alignment on carbonaceous surfaces with orientational order.
J. Stöhr;M. G. Samant;J. Lüning;A. C. Callegari.
Diamond-like carbon films from a hydrocarbon helium plasma
Furederitsuku Denisu Beirii;Dagurasu Andoriyuu Batsuhanan;Aresandoro Sesare Karegarii;Hawaado Maaku Kuriafuiirudo.
Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same
Leena P. Buchwalter;Alessandro Cesare Callegari;Stephan Alan Cohen;Teresita Ordonez Graham.
Multilayer interconnect structure containing air gaps and method for making
Katherina E. Babich;Roy Arthur Carruthers;Timothy Joseph Dalton;Alfred Grill.
Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication
K.W. Guarini;A.W. Topol;M. Ieong;R. Yu.
international electron devices meeting (2002)
Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator
Christos D. Dimitrakopoulos;Bruce K. Furman;Teresita Graham;Suryanarayan Hegde.
Synthetic Metals (1998)
Sputter deposition of hydrogenated amorphous carbon film and applications thereof
Edward D. Babich;Alessandro Cesare Callegari;Fuad Elias Doany;Sampath Purushothaman.
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