2026 Sampath Purushothaman: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	52	9506	9178	2300	2134	172	10807

Overview

Sampath Purushothaman is affiliated with IBM in the United States. Their research spans multiple areas within materials science and engineering, particularly focusing on supercapacitor materials, advanced battery technologies, and copper-based nanomaterials.

The main fields of study for this researcher include:

Materials Science
Engineering

Their work also extends to several subfields, which are:

Electrical and Electronic Engineering
Materials Chemistry
Electronic, Optical and Magnetic Materials
Polymers and Plastics

Key research topics addressed by Sampath Purushothaman include:

Supercapacitor Materials and Fabrication
Advanced battery technologies research
Copper-based nanomaterials and applications
Conducting polymers and applications
ZnO doping and properties
Gas Sensing Nanomaterials and Sensors

Several publications reflect this focus. Notable recent papers are:

Cu2O nanosheets decorated CuMnO2 nanosphere electrodeposited on Cu foil as high-performance supercapacitor electrode, 2020, Materials Science in Semiconductor Processing
In-situ fabrication of sulphur decorated elongated cuboctahedron shaped Mn3O4 as high-performance active charge storage material for supercapacitor application, 2021, Surface and Coatings Technology
Synthesis and characterization of Ag-ZnO nanocomposites, 2025, Journal of Optoelectronic and Biomedical Materials

Frequent co-authors collaborating with Sampath Purushothaman include:

K. Jeyasubramanian
G.S. Hikku
M. Muthuselvi
H Bouguessir
L. S. Chuah

Their research has been published in multiple venues such as:

Materials Science in Semiconductor Processing
Surface and Coatings Technology
Journal of Optoelectronic and Biomedical Materials

Best Publications

Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators

C. D. Dimitrakopoulos;S. Purushothaman;J. Kymissis;A. Callegari

1171
Citations
Atomic-beam alignment of inorganic materials for liquid-crystal displays

P. Chaudhari;James Lacey;James Doyle;Eileen Galligan

516
Citations
High-performance bottom electrode organic thin-film transistors

I. Kymissis;C.D. Dimitrakopoulos;S. Purushothaman

441
Citations
Liquid crystal alignment on carbonaceous surfaces with orientational order.

J. Stöhr;M. G. Samant;J. Lüning;A. C. Callegari

382
Citations
Method of forming closed air gap interconnects and structures formed thereby

Matthew E Colburn;Timothy J Dalton;Elbert Huang;Satya V Nitta

368
Citations
Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same

Leena P. Buchwalter;Alessandro Cesare Callegari;Stephan Alan Cohen;Teresita Ordonez Graham

277
Citations
Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator

Christos D. Dimitrakopoulos;Bruce K. Furman;Teresita Graham;Suryanarayan Hegde

259
Citations
Multilayer interconnect structure containing air gaps and method for making

Katherina E. Babich;Roy Arthur Carruthers;Timothy Joseph Dalton;Alfred Grill

257
Citations
Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

240
Citations
Wafer-level 3D integration technology

S. J. Koester;A. M. Young;R. R. Yu;S. Purushothaman

235
Citations
Sputter deposition of hydrogenated amorphous carbon film and applications thereof

Edward D. Babich;Alessandro Cesare Callegari;Fuad Elias Doany;Sampath Purushothaman

225
Citations
Layer transfer process and functionally enhanced integrated circuits produced thereby

Bruce K. Furman;Sampath Purushothaman;Muthumanickam Sankarapandian;Anna Topol

225
Citations
Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

C. D. Dimitrakopoulos;I. Kymissis;S. Purushothaman;D. A. Neumayer

214
Citations
METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES

Andrew J. Kellock;Hyungjun Kim;Dae-Gyu Park;Satyanarayana V. Nitta

214
Citations
Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer

John C. Arnold;Sampath Purushothaman;Muthumanickam Sankarapandian;Hosadurga K. Shobha

209
Citations
Interfacial reactions during soldering with lead-tin eutectic and lead (Pb)-free, tin-rich solders

S. K. Kang;R. S. Rai;S. Purushothaman

204
Citations
Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric

Christos Dimitrios Dimitrakopoulos;Peter Richard Duncombe;Bruce K. Furman;Robert B. Laibowitz

181
Citations
Techniques for Layer Transfer Processing

Stephen W. Bedell;Keith Edward Fogel;Bruce Kenneth Furman;Sampath Purushothaman

178
Citations
Method for improving performance of organic semiconductors in bottom electrode structure

Christos Dimitrios Dimitrakopoulos;Ioannis Kymissis;Sampath Purushothaman

175
Citations
Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material

Alfred Grill;Jeffrey Curtis Hedrick;Christopher Vincent Jahnes;Satyanarayana Venkata Nitta

161
Citations