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Sampath Purushothaman

Sampath Purushothaman

D-Index & Metrics

Materials Science

D-Index
52
Citations
10807
World Ranking
9504
National Ranking
2298

Sampath Purushothaman publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sampath Purushothaman sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 172 publications — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Sampath Purushothaman D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sampath Purushothaman sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 52 D-Index — 27th percentile

27% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Sampath Purushothaman is affiliated with IBM in the United States. Their research spans multiple areas within materials science and engineering, particularly focusing on supercapacitor materials, advanced battery technologies, and copper-based nanomaterials.

The main fields of study for this researcher include:

  • Materials Science
  • Engineering

Their work also extends to several subfields, which are:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Polymers and Plastics

Key research topics addressed by Sampath Purushothaman include:

  • Supercapacitor Materials and Fabrication
  • Advanced battery technologies research
  • Copper-based nanomaterials and applications
  • Conducting polymers and applications
  • ZnO doping and properties
  • Gas Sensing Nanomaterials and Sensors

Several publications reflect this focus. Notable recent papers are:

  • Cu2O nanosheets decorated CuMnO2 nanosphere electrodeposited on Cu foil as high-performance supercapacitor electrode, 2020, Materials Science in Semiconductor Processing
  • In-situ fabrication of sulphur decorated elongated cuboctahedron shaped Mn3O4 as high-performance active charge storage material for supercapacitor application, 2021, Surface and Coatings Technology
  • Synthesis and characterization of Ag-ZnO nanocomposites, 2025, Journal of Optoelectronic and Biomedical Materials

Frequent co-authors collaborating with Sampath Purushothaman include:

  • K. Jeyasubramanian
  • G.S. Hikku
  • M. Muthuselvi
  • H Bouguessir
  • L. S. Chuah

Their research has been published in multiple venues such as:

  • Materials Science in Semiconductor Processing
  • Surface and Coatings Technology
  • Journal of Optoelectronic and Biomedical Materials

Best Publications

  • Low-Voltage Organic Transistors on Plastic Comprising High-Dielectric Constant Gate Insulators

    C. D. Dimitrakopoulos;S. Purushothaman;J. Kymissis;A. Callegari

  • Atomic-beam alignment of inorganic materials for liquid-crystal displays

    P. Chaudhari;James Lacey;James Doyle;Eileen Galligan

  • High-performance bottom electrode organic thin-film transistors

    I. Kymissis;C.D. Dimitrakopoulos;S. Purushothaman

  • Liquid crystal alignment on carbonaceous surfaces with orientational order.

    J. Stöhr;M. G. Samant;J. Lüning;A. C. Callegari

  • Method of forming closed air gap interconnects and structures formed thereby

    Matthew E Colburn;Timothy J Dalton;Elbert Huang;Satya V Nitta

  • Chip interconnect wiring structure with low dielectric constant insulator and methods for fabricating the same

    Leena P. Buchwalter;Alessandro Cesare Callegari;Stephan Alan Cohen;Teresita Ordonez Graham

  • Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator

    Christos D. Dimitrakopoulos;Bruce K. Furman;Teresita Graham;Suryanarayan Hegde

  • Multilayer interconnect structure containing air gaps and method for making

    Katherina E. Babich;Roy Arthur Carruthers;Timothy Joseph Dalton;Alfred Grill

  • Electrical integrity of state-of-the-art 0.13 /spl mu/m SOI CMOS devices and circuits transferred for three-dimensional (3D) integrated circuit (IC) fabrication

    K.W. Guarini;A.W. Topol;M. Ieong;R. Yu

  • Wafer-level 3D integration technology

    S. J. Koester;A. M. Young;R. R. Yu;S. Purushothaman

  • Sputter deposition of hydrogenated amorphous carbon film and applications thereof

    Edward D. Babich;Alessandro Cesare Callegari;Fuad Elias Doany;Sampath Purushothaman

  • Layer transfer process and functionally enhanced integrated circuits produced thereby

    Bruce K. Furman;Sampath Purushothaman;Muthumanickam Sankarapandian;Anna Topol

  • Low-Voltage, High-Mobility Pentacene Transistors with Solution-Processed High Dielectric Constant Insulators

    C. D. Dimitrakopoulos;I. Kymissis;S. Purushothaman;D. A. Neumayer

  • METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES

    Andrew J. Kellock;Hyungjun Kim;Dae-Gyu Park;Satyanarayana V. Nitta

  • Methods to mitigate plasma damage in organosilicate dielectrics using a protective sidewall spacer

    John C. Arnold;Sampath Purushothaman;Muthumanickam Sankarapandian;Hosadurga K. Shobha

  • Interfacial reactions during soldering with lead-tin eutectic and lead (Pb)-free, tin-rich solders

    S. K. Kang;R. S. Rai;S. Purushothaman

  • Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric

    Christos Dimitrios Dimitrakopoulos;Peter Richard Duncombe;Bruce K. Furman;Robert B. Laibowitz

  • Techniques for Layer Transfer Processing

    Stephen W. Bedell;Keith Edward Fogel;Bruce Kenneth Furman;Sampath Purushothaman

  • Method for improving performance of organic semiconductors in bottom electrode structure

    Christos Dimitrios Dimitrakopoulos;Ioannis Kymissis;Sampath Purushothaman

  • Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material

    Alfred Grill;Jeffrey Curtis Hedrick;Christopher Vincent Jahnes;Satyanarayana Venkata Nitta

Frequent Co-Authors

Fuad E. Doany
Fuad E. Doany IBM (United States)
Christos D. Dimitrakopoulos
Christos D. Dimitrakopoulos University of Massachusetts Amherst
Matthew E. Colburn
Matthew E. Colburn Facebook (United States)
Willi Volksen
Willi Volksen IBM (United States)
Steven J. Koester
Steven J. Koester University of Minnesota
Robert D. Miller
Robert D. Miller Stanford University
Katherine L. Saenger
Katherine L. Saenger Auburn University
Mahesh G. Samant
Mahesh G. Samant IBM (United States)
Alshakim Nelson
Alshakim Nelson University of Washington
Christopher V. Jahnes
Christopher V. Jahnes IBM (United States)

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