Patricia M. Mooney

Patricia M. Mooney publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Patricia M. Mooney sits on this spectrum.

Patricia M. Mooney D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Patricia M. Mooney sits on this spectrum.

Research.com Recognitions

• 2013 - Fellow of the Materials Research Society
• 2013 - Fellow of the Royal Society of Canada Academy of Science
• 1998 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

Best Publications

• Deep donor levels (DX centers) in III‐V semiconductors

  P. M. Mooney

  1120
  Citations

• Measurements of alloy composition and strain in thin GexSi1−x layers

  J. C. Tsang;P. M. Mooney;F. Dacol;J. O. Chu

  585
  Citations

• Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

  K. Rim;J. Chu;H. Chen;K.A. Jenkins

  390
  Citations

• Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

  P. M. Mooney;L. J. Cheng;M. Süli;J. D. Gerson

  376
  Citations

• High performance CMOS fabricated on hybrid substrate with different crystal orientations

  M. Yang;M. Ieong;L. Shi;K. Chan

  354
  Citations

• Controllable valley splitting in silicon quantum devices

  Srijit Goswami;K. A. Slinker;Mark Friesen;L. M. McGuire

  338
  Citations

• Strained Si NMOSFETs for high performance CMOS technology

  K. Rim;S. Koester;M. Hargrove;J. Chu

  335
  Citations

• Influence of misfit dislocations on the surface morphology of Si1−xGex films

  M. A. Lutz;R. M. Feenstra;F. K. LeGoues;P. M. Mooney

  246
  Citations

• Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting the free-carrier density.

  T. N. Theis;P. M. Mooney;S. L. Wright

  225
  Citations

• Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

  Silke H. Christiansen;Jack O. Chu;Alfred Grill;Patricia M. Mooney

  197
  Citations

• Strain relaxation and dislocations in SiGe/Si structures

  P.M. Mooney

  195
  Citations

• Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors

  T. F. Kuech;D. J. Wolford;E. Veuhoff;V. Deline

  193
  Citations

• Raman scattering analysis of relaxed GexSi1−x alloy layers

  P. M. Mooney;F. H. Dacol;J. C. Tsang;J. O. Chu

  193
  Citations

• Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures.

  K. Ismail;F. K. LeGoues;K. L. Saenger;M. Arafa

  178
  Citations

• The capture barrier of the DX center in Si‐doped AlxGa1−xAs

  P. M. Mooney;N. S. Caswell;S. L. Wright

  176
  Citations

• Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same

  Silke H. Christiansen;Alfred Grill;Patricia M. Mooney

  154
  Citations

• Carrier mobility enhancement in strained Si-on-insulator fabricated by wafer bonding

  L.-J. Huang;J.O. Chu;S. Goma;C.P. D'Emic

  148
  Citations

• Spin-Based Quantum Dot Quantum Computing in Silicon

  Mark A. Eriksson;Mark Friesen;Susan N. Coppersmith;Robert Joynt

  147
  Citations

• Electron and hole mobility enhancement in strained SOI by wafer bonding

  Lijuan Huang;J.O. Chu;S.A. Goma;C.P. D'Emic

  135
  Citations

• Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content

  P. M. Mooney;T. N. Theis;S. L. Wright

  130
  Citations

• Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

  K. Rim;R. Anderson;D. Boyd;F. Cardone

  129
  Citations

• Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

  J. Schneider;B. Dischler;H. Seelewind;P. M. Mooney

  126
  Citations