Patricia M. Mooney

Research.com Recognitions

• 2013 - Fellow of the Materials Research Society
• 2013 - Fellow of the Royal Society of Canada Academy of Science
• 1998 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

Best Publications

• Deep donor levels (DX centers) in III‐V semiconductors

  P. M. Mooney

  1120
  Citations

• Measurements of alloy composition and strain in thin GexSi1−x layers

  J. C. Tsang;P. M. Mooney;F. Dacol;J. O. Chu

  585
  Citations

• Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

  K. Rim;J. Chu;H. Chen;K.A. Jenkins

  390
  Citations

• Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons

  P. M. Mooney;L. J. Cheng;M. Süli;J. D. Gerson

  376
  Citations

• High performance CMOS fabricated on hybrid substrate with different crystal orientations

  M. Yang;M. Ieong;L. Shi;K. Chan

  354
  Citations

• Controllable valley splitting in silicon quantum devices

  Srijit Goswami;K. A. Slinker;Mark Friesen;L. M. McGuire

  338
  Citations

• Strained Si NMOSFETs for high performance CMOS technology

  K. Rim;S. Koester;M. Hargrove;J. Chu

  335
  Citations

• Influence of misfit dislocations on the surface morphology of Si1−xGex films

  M. A. Lutz;R. M. Feenstra;F. K. LeGoues;P. M. Mooney

  246
  Citations

• Electron localization by a metastable donor level in n-GaAs: A new mechanism limiting the free-carrier density.

  T. N. Theis;P. M. Mooney;S. L. Wright

  225
  Citations

• Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

  Silke H. Christiansen;Jack O. Chu;Alfred Grill;Patricia M. Mooney

  197
  Citations

• Strain relaxation and dislocations in SiGe/Si structures

  P.M. Mooney

  195
  Citations

• Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors

  T. F. Kuech;D. J. Wolford;E. Veuhoff;V. Deline

  193
  Citations

• Raman scattering analysis of relaxed GexSi1−x alloy layers

  P. M. Mooney;F. H. Dacol;J. C. Tsang;J. O. Chu

  193
  Citations

• Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures.

  K. Ismail;F. K. LeGoues;K. L. Saenger;M. Arafa

  178
  Citations

• The capture barrier of the DX center in Si‐doped AlxGa1−xAs

  P. M. Mooney;N. S. Caswell;S. L. Wright

  176
  Citations

• Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same

  Silke H. Christiansen;Alfred Grill;Patricia M. Mooney

  154
  Citations

• Carrier mobility enhancement in strained Si-on-insulator fabricated by wafer bonding

  L.-J. Huang;J.O. Chu;S. Goma;C.P. D'Emic

  148
  Citations

• Spin-Based Quantum Dot Quantum Computing in Silicon

  Mark A. Eriksson;Mark Friesen;Susan N. Coppersmith;Robert Joynt

  147
  Citations

• Electron and hole mobility enhancement in strained SOI by wafer bonding

  Lijuan Huang;J.O. Chu;S.A. Goma;C.P. D'Emic

  135
  Citations

• Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1−xAs of low Al content

  P. M. Mooney;T. N. Theis;S. L. Wright

  130
  Citations

• Strained Si CMOS (SS CMOS) technology: Opportunities and challenges

  K. Rim;R. Anderson;D. Boyd;F. Cardone

  129
  Citations

• Assessment of oxygen in gallium arsenide by infrared local vibrational mode spectroscopy

  J. Schneider;B. Dischler;H. Seelewind;P. M. Mooney

  126
  Citations