What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Silicon
- Optoelectronics
His scientific interests lie mostly in Optoelectronics, Semiconductor, Nanotechnology, Field-effect transistor and Germanium.
Optoelectronics and Epitaxy are frequently intertwined in his study.
His Epitaxy research incorporates elements of Chemical vapor deposition and Aspect ratio.
Anthony J. Lochtefeld focuses mostly in the field of Semiconductor, narrowing it down to topics relating to Lattice and, in certain cases, Dielectric layer, Semiconductor materials, Threading dislocations, Semiconductor heterostructures and Semiconductor device.
As part of his studies on Field-effect transistor, Anthony J. Lochtefeld often connects relevant subjects like Substrate.
His Germanium study is associated with Silicon.
His most cited work include:
- Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors (779 citations)
- Strained-semiconductor-on-insulator device structures (353 citations)
- Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same (328 citations)
What are the main themes of his work throughout his whole career to date?
Anthony J. Lochtefeld spends much of his time researching Optoelectronics, Semiconductor, Silicon, Substrate and Semiconductor device.
His Optoelectronics research is multidisciplinary, relying on both Trench and Epitaxy.
His Semiconductor research incorporates themes from Layer, Nanotechnology, Heterojunction, Lattice and Insulator.
His work deals with themes such as Electron mobility, Substrate and Dislocation, which intersect with Silicon.
His research on Substrate frequently links to adjacent areas such as Field-effect transistor.
His research in Semiconductor device tackles topics such as Photodetector which are related to areas like Hybrid silicon laser.
He most often published in these fields:
- Optoelectronics (76.32%)
- Semiconductor (44.74%)
- Silicon (21.05%)
What were the highlights of his more recent work (between 2010-2015)?
- Optoelectronics (76.32%)
- Semiconductor device (19.74%)
- Silicon (21.05%)
In recent papers he was focusing on the following fields of study:
Optoelectronics, Semiconductor device, Silicon, Photodetector and Photonics are his primary areas of study.
His studies deal with areas such as Substrate, Compound semiconductor and Dislocation as well as Optoelectronics.
His Substrate study incorporates themes from Hybrid silicon laser and Semiconductor sensor.
The concepts of his Dislocation study are interwoven with issues in Crystal and Micron size.
Many of his studies on Silicon involve topics that are commonly interrelated, such as Substrate.
Anthony J. Lochtefeld interconnects Dram and Shallow trench isolation in the investigation of issues within Semiconductor.
Between 2010 and 2015, his most popular works were:
- Semiconductor sensor structures with reduced dislocation defect densities (17 citations)
- Strained Channel Dynamic Random Access Memory Devices (8 citations)
- Sensor and manufacturing method thereof (7 citations)
This overview was generated by a machine learning system which analysed the scientist’s
body of work. If you have any feedback, you can
contact us
here.
