World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
41
Citations
8638
World Ranking
6850
National Ranking
1865

Overview

Anthony J Lochtefeld is affiliated with Taiwan Semiconductor Manufacturing Company (United States) in the United States. The current scope of their work as indicated by the available data is centered within this primary affiliation.

There are no recent papers, frequent co-authors, or specific publication venues listed for Anthony J Lochtefeld. Additionally, there is no information about their main fields or subfields of study, book publications, or main topics of work.

There is no record of awards received or specific years tied to any recognitions.

The data provided does not include details on the scientist's research themes, notable projects, or collaborative networks beyond the institutional affiliation.

Due to the lack of detailed bibliometric or thematic information, it is not possible to elaborate on the research contributions or areas of expertise beyond the confirmed association with Taiwan Semiconductor Manufacturing Company (United States).

Best Publications

  • Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

    Minjoo L. Lee;Eugene A. Fitzgerald;Mayank T. Bulsara;Matthew T. Currie

  • Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

    Matthew T. Currie;Anthony J. Lochtefeld;Richard Hammond;Eugene A. Fitzgerald

  • Strained-semiconductor-on-insulator device structures

    Anthony Lochtefeld;Thomas Langdo;Richard Hammond;Matthew Currie

  • Methods of Forming Strained-Semiconductor-on-Insulator Device Structures

    Thomas A. Langdo;Matthew T. Currie;Richard Hammond;Anthony J. Lochtefeld

  • Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication

    Anthony J. Lochtefeld;Matthew T. Currie;Zhiyuan Cheng;James Fiorenza

  • High quality Ge on Si by epitaxial necking

    T. A. Langdo;C. W. Leitz;M. T. Currie;E. A. Fitzgerald

  • Defect reduction of selective Ge epitaxy in trenches on Si(001) substrates using aspect ratio trapping

    J.-S. Park;J. Bai;M. Curtin;B. Adekore

  • Methods of fabricating semiconductor structures having epitaxially grown source and drain elements

    Thomas A. Langdo;Anthony J. Lochtefeld

  • Tri-gate field-effect transistors formed by aspect ratio trapping

    Anthony J. Lochtefeld

  • Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping

    J. Z. Li;J. Bai;J.-S. Park;B. Adekore

  • On experimental determination of carrier velocity in deeply scaled NMOS: how close to the thermal limit?

    A. Lochtefeld;D.A. Antoniadis

  • Defect Reduction Using Aspect Ratio Trapping

    Jie Bai;Ji-Soo Park;Anthony J. Lochtefeld

  • Methods of fabricating semiconductor devices having strained dual channel layers

    Matthew T. Currie;Anthony J. Lochtefeld;Christopher W. Leitz;Eugene A. Fitzgerald

  • Film thickness constraints for manufacturable strained silicon CMOS

    J. G. Fiorenza;G. Braithwaite;C. W. Leitz;M. T. Currie

  • SiGe-free strained Si on insulator by wafer bonding and layer transfer

    T. A. Langdo;M. T. Currie;A. Lochtefeld;R. Hammond

  • The role of point defects and arsenic precipitates in carrier trapping and recombination in low‐temperature grown GaAs

    A. J. Lochtefeld;M. R. Melloch;J. C. P. Chang;E. S. Harmon

  • Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics

    Y. Q. Wu;Y. Xuan;T. Shen;P. D. Ye

  • Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress

    A. Lochtefeld;D.A. Antoniadis

  • Semiconductor sensor structures with reduced dislocation defect densities

    Zhiyuan Cheng;James Fiorenza;Calvin Sheen;Anthony J. Lochtefeld

  • Lattice-mismatched semiconductor structures and related methods for device fabrication

    Anthony J. Lochtefeld

  • Fabrication of 200 nm period nanomagnet arrays using interference lithography and a negative resist

    Maya Farhoud;Juan Ferrera;Anthony J. Lochtefeld;T. E. Murphy

  • Photovoltaics on silicon

    Jizhong Li;Anthony J. Lochtefeld;Calvin Sheen;Zhiyuan Cheng

  • Multi-junction solar cells

    James Fiorenza;Anthony J. Lochtefeld

  • Strained Channel Dynamic Random Access Memory Devices

    Mayank T. Bulsara;Matthew T. Currie;Anthony J. Lochtefeld

Frequent Co-Authors

Matthew T. Currie
Matthew T. Currie Morgan, Lewis & Bockius LLP
Minjoo Larry Lee
Minjoo Larry Lee University of Illinois at Urbana-Champaign
Ganesh S. Samudra
Ganesh S. Samudra National University of Singapore
Qi Xiang
Qi Xiang Xilinx (United States)

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

Exploring Engineering and Technology can open doors to a wide range of related careers. If you are considering a broader skill set or want to boost your administrative expertise, online programs offer flexible and valuable alternatives.

For those seeking practical financial skills, enrolling in the best bookkeeping certification programs can enhance employability and provide a strong foundation in business finance. Similarly, those interested in workplace efficiency may benefit from office administration classes, which teach essential management and organizational skills.

For a broader business background, many accredited institutions now offer online business degree programs accredited for working professionals and students seeking flexible study options. Additionally, seasoned professionals aiming for leadership roles may consider a masters in organizational leadership online to prepare for high-level management and strategic decision-making positions.

These online degrees not only complement traditional engineering and technology pathways but also help graduates stand out in a versatile and competitive job market.

Best Scientists Citing anthony j lochtefeld

Trending Scientists