World's Best Scientists 2026 revealed!

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 48 3072 2944 1156 1078 225 9246

Anand S. Murthy publications per year

The chart shows the history of publications by Anand S. Murthy between 1999 and 2021, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Anand S. Murthy published across 23 years, from 1999 to 2021, averaging 11.4 papers a year. Output peaked at 50 publications in 2018. 43 of the 262 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1999 to 2021. Vertical axis: number of publications, 0 to 50. Peak 50 publications in 2018. 1999: 5 publications 2000: 6 publications 2001: 3 publications 2002: 7 publications 2003: 10 publications 2004: 5 publications 2005: 3 publications 2006: 8 publications 2007: 4 publications 2008: 9 publications 2009: 5 publications 2010: 9 publications 2011: 11 publications 2012: 3 publications 2013: 8 publications 2014: 16 publications 2015: 17 publications 2016: 21 publications 2017: 8 publications 2018: 50 publications 2019: 11 publications 2020: 40 publications 2021: 3 publications
1999 2021

262 publications in total across all disciplines

View publications per year as a table
Anand S. Murthy: publications per year, 1999 to 2021
Year Publications
1999 5
2000 6
2001 3
2002 7
2003 10
2004 5
2005 3
2006 8
2007 4
2008 9
2009 5
2010 9
2011 11
2012 3
2013 8
2014 16
2015 17
2016 21
2017 8
2018 50
2019 11
2020 40
2021 3
Total 262
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Anand S. Murthy publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Anand S. Murthy sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 214–233 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 225 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431 225
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Anand S. Murthy D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Anand S. Murthy sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 48 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 48 D-Index — 56th percentile

56% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134 48
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Silicon

Optoelectronics, Transistor, Silicon, Layer and Electronic engineering are his primary areas of study. His Optoelectronics research includes elements of Semiconductor device, Electrical engineering and Contact resistance. His Transistor research integrates issues from CMOS, Undercut, Semiconductor and Integrated circuit.

While the research belongs to areas of Silicon, Anand S. Murthy spends his time largely on the problem of Gate dielectric, intersecting his research to questions surrounding Metal gate, Gate oxide and Fin. His work on Epitaxy as part of general Layer study is frequently linked to Process, bridging the gap between disciplines. PMOS logic is closely connected to Oxide thin-film transistor in his research, which is encompassed under the umbrella topic of Electronic engineering.

His most cited work include:

  • Semiconductor transistor having a stressed channel (402 citations)
  • Contact resistance reduced p-mos transistors employing ge-rich contact layer (214 citations)
  • III-V layers for N-type and P-type MOS source-drain contacts (163 citations)

What are the main themes of his work throughout his whole career to date?

His main research concerns Optoelectronics, Transistor, Layer, Silicon and Epitaxy. His research on Optoelectronics often connects related topics like Substrate. His Transistor study is concerned with Electrical engineering in general.

His work on Gate oxide as part of general Electrical engineering study is frequently connected to Fabrication and Conductivity, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His study looks at the intersection of Silicon and topics like Electronic engineering with Oxide thin-film transistor. His work carried out in the field of Semiconductor brings together such families of science as Field-effect transistor and Dielectric.

He most often published in these fields:

  • Optoelectronics (87.64%)
  • Transistor (56.55%)
  • Layer (25.09%)

What were the highlights of his more recent work (between 2019-2021)?

  • Optoelectronics (87.64%)
  • Transistor (56.55%)
  • Epitaxy (17.60%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Transistor, Epitaxy, Integrated circuit and Silicon. His research integrates issues of Layer and Semiconductor device in his study of Optoelectronics. Anand S. Murthy has included themes like Etching, Doping and Germanium in his Transistor study.

His Germanium research is multidisciplinary, incorporating perspectives in Analytical chemistry and Silicon-germanium. His biological study spans a wide range of topics, including Electrical conductor and Semiconductor materials, Semiconductor. As part of one scientific family, Anand S. Murthy deals mainly with the area of Silicon, narrowing it down to issues related to the Arsenic, and often Second source.

Between 2019 and 2021, his most popular works were:

  • INTERCONNECT TECHNIQUES FOR ELECTRICALLY CONNECTING SOURCE/DRAIN REGIONS OF STACKED TRANSISTORS (3 citations)
  • GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING VERTICALLY DISCRETE SOURCE OR DRAIN STRUCTURES (2 citations)
  • STRAINED TUNABLE NANOWIRE STRUCTURES AND PROCESS (1 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Silicon
  • Transistor

Anand S. Murthy spends much of his time researching Optoelectronics, Transistor, Epitaxy, Integrated circuit and Dopant. Silicon and Nanowire are subfields of Optoelectronics in which his conducts study. His research integrates issues of Doping and Semiconductor in his study of Transistor.

His work deals with themes such as Semiconductor materials, Epitaxial material and Electrical conductor, which intersect with Doping. His Dopant study incorporates themes from Deposition, Thin-film transistor and Undercut. His work investigates the relationship between Semiconductor device and topics such as Buffer that intersect with problems in Substrate and Layer.

Best Publications

  • A 90-nm logic technology featuring strained-silicon

    S.E. Thompson;M. Armstrong;C. Auth;M. Alavi

  • High performance fully-depleted tri-gate CMOS transistors

    B.S. Doyle;S. Datta;M. Doczy;S. Hareland

  • Semiconductor transistor having a stressed channel

    Anand Murthy;Robert S. Chau;Tahir Ghani;Kaizad R. Mistry

  • Contact resistance reduced p-mos transistors employing ge-rich contact layer

    Glenn A. Glass;Anand S. Murthy

  • MOS transistor structure and method of fabrication

    Anand Murthy;Robert S. Chau;Patrick Morrow

  • A 32nm logic technology featuring 2 nd -generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm 2 SRAM cell size in a 291Mb array

    S. Natarajan;M. Armstrong;M. Bost;R. Brain

  • A 50 nm depleted-substrate CMOS transistor (DST)

    R. Chau;J. Kavalieros;B. Doyle;A. Murthy

  • Semiconductor device having doped epitaxial region and its methods of fabrication

    Anand S. Murthy;Daniel Bourne Aubertine;Tahir Ghani;Abhijit Jayant Pethe

  • Semiconductor transistor having a backfilled channel material

    Anand S. Murthy;Brian S. Doyle;Brian E. Roberds

  • Method for fabricating a bipolar transistor base

    Ravindra Soman;Anand Murthy

  • III-V SEMICONDUCTOR DEVICE HAVING III-V SEMICONDUCTOR MATERIAL LAYER

    Glass Glenn A;Murthy Anand S;Ghani Tahir

  • Semiconductor device having deposited silicon regions and a method of fabrication

    Anand Murthy;Chia-Hong Jan;Ebrahim Andideh;Kevin Weldon

  • multi-gate transistor

    カペラーニ、アナリサ;Cappellani Annalisa;ガーニ、タヒア;Ghani Tahir

  • Graded high germanium compound films for strained semiconductor devices

    Danielle Simonelli;Anand Murthy

  • CMOS transistor junction regions formed by a CVD etching and deposition sequence

    Anand Murthy;Glenn A. Glass;Andrew N. Westmeyer;Michael L. Hattendorf

  • Transistor with improved tip profile and method of manufacture thereof

    Mark T. Bohr;Steven J. Keating;Thomas A. Letson;Anand S. Murthy

  • Nanowire transistor devices and forming techniques

    Glenn A. Glass;Kelin J. Kuhn;Seiyon Kim;Anand S. Murthy

  • Integration methods to fabricate internal spacers for nanowire devices

    Seiyon Kim;Kelin J. Kuhn;Tahir Ghani;Anand S. Murthy

  • 30 nm physical gate length CMOS transistors with 1.0 ps n-MOS and 1.7 ps p-MOS gate delays

    R. Chau;J. Kavalieros;B. Roberds;R. Schenker

  • Method for forming an integrated circuit

    Anand S. Murthy;Glenn A. Glass;Andrew N. Westmeyer;Michael L. Hattendorf

  • TRANSISTORS WITH HIGH CONCENTRATION OF GERMANIUM

    Murthy Anand S;Glass Glenn A;Ghani Tahir;Pillarisetty Ravi

Frequent Co-Authors

Tahir Ghani
Tahir Ghani Intel (United States)
Robert S. Chau
Robert S. Chau Intel (United States)
Brian S. Doyle
Brian S. Doyle Intel (United States)
Mark T. Bohr
Mark T. Bohr Intel (United States)
Justin K. Brask
Justin K. Brask Intel (United States)
Suman Datta
Suman Datta Georgia Institute of Technology
Mark L. Doczy
Mark L. Doczy Intel (United States)
Prashant Majhi
Prashant Majhi Intel (United States)
Marko Radosavljevic
Marko Radosavljevic Intel (United States)

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