Naoharu Sugiyama spends much of his time researching Optoelectronics, MOSFET, Electron mobility, Silicon on insulator and Insulator. His Optoelectronics research includes elements of Layer, Semiconductor device and Strained silicon. His study focuses on the intersection of MOSFET and fields such as CMOS with connections in the field of Voltage and p–n junction.
Naoharu Sugiyama interconnects Germanium, Epitaxy and Thermal oxidation in the investigation of issues within Silicon on insulator. He works mostly in the field of Epitaxy, limiting it down to topics relating to Transmission electron microscopy and, in certain cases, Analytical chemistry, as a part of the same area of interest. His Insulator research is multidisciplinary, relying on both Semiconductor materials, Oxide, Silicon, Crystallography and Thermal oxide.
Naoharu Sugiyama mainly focuses on Optoelectronics, MOSFET, Silicon on insulator, Insulator and Electron mobility. His Optoelectronics study frequently draws connections to other fields, such as Epitaxy. His work in MOSFET covers topics such as Heterojunction which are related to areas like Ballistic conduction.
His studies deal with areas such as Wafer, Stress relaxation, Thin film, Dielectric and Dislocation as well as Silicon on insulator. Naoharu Sugiyama usually deals with Insulator and limits it to topics linked to Field-effect transistor and Metal insulator and Semiconductor. Naoharu Sugiyama has included themes like Effective mass and Induced high electron mobility transistor in his Electron mobility study.
Naoharu Sugiyama mostly deals with Optoelectronics, MOSFET, Germanium, Electron mobility and Silicon on insulator. His Optoelectronics research incorporates elements of Field-effect transistor and Nanotechnology. His MOSFET research includes themes of Logic gate, Ballistic conduction, Strained silicon, Etching and Quantum tunnelling.
His study looks at the intersection of Germanium and topics like Crystallography with Lattice and Relaxation rate. His research integrates issues of Passivation, Parasitic element, Induced high electron mobility transistor, Effective mass and CMOS in his study of Electron mobility. His work carried out in the field of Silicon on insulator brings together such families of science as Epitaxy and Anisotropy.
His main research concerns Optoelectronics, MOSFET, Electron mobility, Silicon and Germanium. Optoelectronics is closely attributed to Nanotechnology in his research. His Gate oxide research extends to MOSFET, which is thematically connected.
Naoharu Sugiyama combines subjects such as Silicon on insulator and Semiconductor with his study of Electron mobility. His study in Silicon on insulator is interdisciplinary in nature, drawing from both Epitaxy, Parasitic element, Induced high electron mobility transistor, Effective mass and CMOS. Naoharu Sugiyama has researched Germanium in several fields, including Semiconductor thin films, Insulator and Analytical chemistry.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
S. Takagi;T. Iisawa;T. Tezuka;T. Numata.
IEEE Transactions on Electron Devices (2008)
Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama.
Applied Physics Letters (2003)
Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology
T. Mizuno;S. Takagi;N. Sugiyama;H. Satake.
IEEE Electron Device Letters (2000)
Si-SiGe semiconductor device and method of fabricating the same
Seiji Imai;Yoshiko Hiraoka;Atsushi Kurobe;Naoharu Sugiyama.
A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs
Tsutomu Tezuka;Naoharu Sugiyama;Tomohisa Mizuno;Masamichi Suzuki.
Japanese Journal of Applied Physics (2001)
Non-volatile Si quantum memory with self-aligned doubly-stacked dots
R. Ohba;N. Sugiyama;K. Uchida;J. Koga.
international electron devices meeting (2000)
Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same
Naoharu Sugiyama;Tsutomu Tezuka;Riichi Katoh;Atsushi Kurobe.
Device structures and carrier transport properties of advanced CMOS using high mobility channels
S. Takagi;S. Takagi;T. Tezuka;T. Irisawa;S. Nakaharai.
Solid-state Electronics (2007)
High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain
T. Maeda;K. Ikeda;S. Nakaharai;T. Tezuka.
IEEE Electron Device Letters (2005)
Semiconductor device and memory device
Naoharu Sugiyama;Atsushi Kurobe.
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: