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Naoharu Sugiyama

Naoharu Sugiyama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
7917
World Ranking
3565
National Ranking
133

Materials Science

D-Index
45
Citations
7955
World Ranking
11724
National Ranking
724

Overview

Naoharu Sugiyama is affiliated with Nagoya University in Japan. Their research primarily spans the fields of Physics and Astronomy and Materials Science, with a particular emphasis on specialized subfields such as Condensed Matter Physics, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, and Spectroscopy.

The scientist's main topics of work focus extensively on semiconductor and material studies, including:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • Nanowire Synthesis and Applications
  • Spectroscopy and Laser Applications
  • ZnO doping and properties

Naoharu Sugiyama has contributed to multiple publication venues, with frequent articles appearing in:

  • Applied Physics Letters
  • Japanese Journal of Applied Physics
  • Applied Physics Express

Their recent papers include:

  • "On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR" (2020, Applied Physics Letters)
  • "Design and characterization of a low-optical-loss UV-C laser diode" (2020, Japanese Journal of Applied Physics)
  • "Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes" (2020, Applied Physics Letters)
  • "Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate" (2021, Applied Physics Express)

Collaborations are integral to their research, with frequent co-authors including:

  • Maki Kushimoto
  • Ziyi Zhang
  • L. J. Schowalter
  • Chiaki Sasaoka
  • Hiroshi Amano

Best Publications

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

    S. Takagi;T. Iisawa;T. Tezuka;T. Numata

  • Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

    T. Tezuka;N. Sugiyama;S. Takagi

  • Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

    Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama

  • A 271.8 nm deep-ultraviolet laser diode for room temperature operation

    Ziyi Zhang;Ziyi Zhang;Maki Kushimoto;Tadayoshi Sakai;Naoharu Sugiyama

  • Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

    T. Mizuno;S. Takagi;N. Sugiyama;H. Satake

  • Si-SiGe semiconductor device and method of fabricating the same

    Seiji Imai;Yoshiko Hiraoka;Atsushi Kurobe;Naoharu Sugiyama

  • A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

    Tsutomu Tezuka;Naoharu Sugiyama;Tomohisa Mizuno;Masamichi Suzuki

  • Non-volatile Si quantum memory with self-aligned doubly-stacked dots

    R. Ohba;N. Sugiyama;K. Uchida;J. Koga

  • Device structures and carrier transport properties of advanced CMOS using high mobility channels

    S. Takagi;S. Takagi;T. Tezuka;T. Irisawa;S. Nakaharai

  • Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same

    Naoharu Sugiyama;Tsutomu Tezuka;Riichi Katoh;Atsushi Kurobe

  • High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

    T. Maeda;K. Ikeda;S. Nakaharai;T. Tezuka

  • Semiconductor device and memory device

    Naoharu Sugiyama;Atsushi Kurobe

  • High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

    T. Tezuka;S. Nakaharai;Y. Moriyama;N. Sugiyama

  • Gate dielectric formation and MIS interface characterization on Ge

    S. Takagi;T. Maeda;N. Taoka;M. Nishizawa

  • Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

    S. Takagi;T. Mizuno;T. Tezuka;N. Sugiyama

  • Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation

    Keiji Ikeda;Yoshimi Yamashita;Naoharu Sugiyama;Noriyuki Taoka

  • [110]-surface strained-SOI CMOS devices

    T. Mizuno;N. Sugiyama;T. Tezuka;Y. Moriyama

  • High-performance strained Si-on-insulator MOSFETs by novel fabrication processes utilizing Ge-condensation technique

    T. Tezuka;N. Sugiyama;T. Mizuno;S. Takagi

  • Semiconductor devices and methods for producing semiconductor devices

    Naoharu Sugiyama;Tomohisa Mizuno;Shinichi Takagi;Atsushi Kurobe

  • High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology

    T. Mizuno;N. Sugiyama;T. Tezuka;T. Numata

Frequent Co-Authors

Shinichi Takagi
Shinichi Takagi University of Tokyo
Tsutomu Tezuka
Tsutomu Tezuka Toshiba (Japan)
Junji Koga
Junji Koga Toshiba (Japan)
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Akira Toriumi
Akira Toriumi University of Tokyo
Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo
Akira Toriumi
Akira Toriumi University of Tokyo

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