D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 35 Citations 5,843 139 World Ranking 3687 National Ranking 149

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Transistor

Naoharu Sugiyama spends much of his time researching Optoelectronics, MOSFET, Electron mobility, Silicon on insulator and Insulator. His Optoelectronics research includes elements of Layer, Semiconductor device and Strained silicon. His study focuses on the intersection of MOSFET and fields such as CMOS with connections in the field of Voltage and p–n junction.

Naoharu Sugiyama interconnects Germanium, Epitaxy and Thermal oxidation in the investigation of issues within Silicon on insulator. He works mostly in the field of Epitaxy, limiting it down to topics relating to Transmission electron microscopy and, in certain cases, Analytical chemistry, as a part of the same area of interest. His Insulator research is multidisciplinary, relying on both Semiconductor materials, Oxide, Silicon, Crystallography and Thermal oxide.

His most cited work include:

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (286 citations)
  • Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique (271 citations)
  • Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology (254 citations)

What are the main themes of his work throughout his whole career to date?

Naoharu Sugiyama mainly focuses on Optoelectronics, MOSFET, Silicon on insulator, Insulator and Electron mobility. His Optoelectronics study frequently draws connections to other fields, such as Epitaxy. His work in MOSFET covers topics such as Heterojunction which are related to areas like Ballistic conduction.

His studies deal with areas such as Wafer, Stress relaxation, Thin film, Dielectric and Dislocation as well as Silicon on insulator. Naoharu Sugiyama usually deals with Insulator and limits it to topics linked to Field-effect transistor and Metal insulator and Semiconductor. Naoharu Sugiyama has included themes like Effective mass and Induced high electron mobility transistor in his Electron mobility study.

He most often published in these fields:

  • Optoelectronics (72.96%)
  • MOSFET (37.74%)
  • Silicon on insulator (37.11%)

What were the highlights of his more recent work (between 2007-2011)?

  • Optoelectronics (72.96%)
  • MOSFET (37.74%)
  • Germanium (15.09%)

In recent papers he was focusing on the following fields of study:

Naoharu Sugiyama mostly deals with Optoelectronics, MOSFET, Germanium, Electron mobility and Silicon on insulator. His Optoelectronics research incorporates elements of Field-effect transistor and Nanotechnology. His MOSFET research includes themes of Logic gate, Ballistic conduction, Strained silicon, Etching and Quantum tunnelling.

His study looks at the intersection of Germanium and topics like Crystallography with Lattice and Relaxation rate. His research integrates issues of Passivation, Parasitic element, Induced high electron mobility transistor, Effective mass and CMOS in his study of Electron mobility. His work carried out in the field of Silicon on insulator brings together such families of science as Epitaxy and Anisotropy.

Between 2007 and 2011, his most popular works were:

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (286 citations)
  • Effects of Si passivation on Ge metal-insulator-semiconductor interface properties and inversion-layer hole mobility (44 citations)
  • Device Design and Electron Transport Properties of Uniaxially Strained-SOI Tri-Gate nMOSFETs (43 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Silicon
  • Transistor

His main research concerns Optoelectronics, MOSFET, Electron mobility, Silicon and Germanium. Optoelectronics is closely attributed to Nanotechnology in his research. His Gate oxide research extends to MOSFET, which is thematically connected.

Naoharu Sugiyama combines subjects such as Silicon on insulator and Semiconductor with his study of Electron mobility. His study in Silicon on insulator is interdisciplinary in nature, drawing from both Epitaxy, Parasitic element, Induced high electron mobility transistor, Effective mass and CMOS. Naoharu Sugiyama has researched Germanium in several fields, including Semiconductor thin films, Insulator and Analytical chemistry.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

S. Takagi;T. Iisawa;T. Tezuka;T. Numata.
IEEE Transactions on Electron Devices (2008)

415 Citations

Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama.
Applied Physics Letters (2003)

349 Citations

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

T. Mizuno;S. Takagi;N. Sugiyama;H. Satake.
IEEE Electron Device Letters (2000)

307 Citations

Si-SiGe semiconductor device and method of fabricating the same

Seiji Imai;Yoshiko Hiraoka;Atsushi Kurobe;Naoharu Sugiyama.
(1997)

305 Citations

A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

Tsutomu Tezuka;Naoharu Sugiyama;Tomohisa Mizuno;Masamichi Suzuki.
Japanese Journal of Applied Physics (2001)

284 Citations

Non-volatile Si quantum memory with self-aligned doubly-stacked dots

R. Ohba;N. Sugiyama;K. Uchida;J. Koga.
international electron devices meeting (2000)

198 Citations

Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same

Naoharu Sugiyama;Tsutomu Tezuka;Riichi Katoh;Atsushi Kurobe.
(1998)

184 Citations

Device structures and carrier transport properties of advanced CMOS using high mobility channels

S. Takagi;S. Takagi;T. Tezuka;T. Irisawa;S. Nakaharai.
Solid-state Electronics (2007)

182 Citations

High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

T. Maeda;K. Ikeda;S. Nakaharai;T. Tezuka.
IEEE Electron Device Letters (2005)

155 Citations

Semiconductor device and memory device

Naoharu Sugiyama;Atsushi Kurobe.
(1997)

144 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Naoharu Sugiyama

Shinichi Takagi

Shinichi Takagi

University of Tokyo

Publications: 151

Mitsuru Takenaka

Mitsuru Takenaka

University of Tokyo

Publications: 119

Masanobu Miyao

Masanobu Miyao

Kyushu University

Publications: 56

Eugene A. Fitzgerald

Eugene A. Fitzgerald

MIT

Publications: 46

Matthew T. Currie

Matthew T. Currie

Morgan, Lewis & Bockius LLP

Publications: 44

Leonard Forbes

Leonard Forbes

L. Forbes and Associates LLC

Publications: 38

Arup Bhattacharyya

Arup Bhattacharyya

Micron (United States)

Publications: 37

Yee-Chia Yeo

Yee-Chia Yeo

National University of Singapore

Publications: 33

Scott E. Thompson

Scott E. Thompson

University of Florida

Publications: 28

Hiroshi Iwai

Hiroshi Iwai

Tokyo Institute of Technology

Publications: 28

Dim-Lee Kwong

Dim-Lee Kwong

Agency for Science, Technology and Research

Publications: 25

Tsutomu Tezuka

Tsutomu Tezuka

Toshiba (Japan)

Publications: 24

Stephen W. Bedell

Stephen W. Bedell

IBM (United States)

Publications: 24

Devendra K. Sadana

Devendra K. Sadana

IBM (United States)

Publications: 23

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 22

Gerard Ghibaudo

Gerard Ghibaudo

Grenoble Alpes University

Publications: 19

Trending Scientists

Reinhard Selten

Reinhard Selten

University of Bonn

Ivar Ekeland

Ivar Ekeland

University of British Columbia

Philip Handler

Philip Handler

Duke University

Jianguo Mei

Jianguo Mei

Purdue University West Lafayette

Stephen L. Buchmann

Stephen L. Buchmann

University of Arizona

Romain Koszul

Romain Koszul

Institut Pasteur

Kiichi Hirota

Kiichi Hirota

Kansai Medical University

Marc C.J. Verdegem

Marc C.J. Verdegem

Wageningen University & Research

Angela Sirigu

Angela Sirigu

Centre national de la recherche scientifique, CNRS

Kenneth I. Weinberg

Kenneth I. Weinberg

Stanford University

Linda Steg

Linda Steg

University of Groningen

Falko F. Sniehotta

Falko F. Sniehotta

Newcastle University

K. Ranga Rama Krishnan

K. Ranga Rama Krishnan

Rush University Medical Center

Grethe S. Tell

Grethe S. Tell

University of Bergen

John C. Raymond

John C. Raymond

Harvard University

Something went wrong. Please try again later.