World's Best Scientists 2026 revealed!
Naoharu Sugiyama

Naoharu Sugiyama

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
45
Citations
7917
World Ranking
3565
National Ranking
133

Materials Science

D-Index
45
Citations
7955
World Ranking
11722
National Ranking
724

Naoharu Sugiyama publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Naoharu Sugiyama sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 197 publications — 28th percentile

28% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Naoharu Sugiyama D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Naoharu Sugiyama sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 45 D-Index — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Naoharu Sugiyama is affiliated with Nagoya University in Japan. Their research primarily spans the fields of Physics and Astronomy and Materials Science, with a particular emphasis on specialized subfields such as Condensed Matter Physics, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, Biomedical Engineering, and Spectroscopy.

The scientist's main topics of work focus extensively on semiconductor and material studies, including:

  • GaN-based semiconductor devices and materials
  • Semiconductor Quantum Structures and Devices
  • Ga2O3 and related materials
  • Nanowire Synthesis and Applications
  • Spectroscopy and Laser Applications
  • ZnO doping and properties

Naoharu Sugiyama has contributed to multiple publication venues, with frequent articles appearing in:

  • Applied Physics Letters
  • Japanese Journal of Applied Physics
  • Applied Physics Express

Their recent papers include:

  • "On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR" (2020, Applied Physics Letters)
  • "Design and characterization of a low-optical-loss UV-C laser diode" (2020, Japanese Journal of Applied Physics)
  • "Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes" (2020, Applied Physics Letters)
  • "Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate" (2021, Applied Physics Express)

Collaborations are integral to their research, with frequent co-authors including:

  • Maki Kushimoto
  • Ziyi Zhang
  • L. J. Schowalter
  • Chiaki Sasaoka
  • Hiroshi Amano

Best Publications

  • Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

    S. Takagi;T. Iisawa;T. Tezuka;T. Numata

  • Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction

    T. Tezuka;N. Sugiyama;S. Takagi

  • Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique

    Shu Nakaharai;Tsutomu Tezuka;Naoharu Sugiyama;Yoshihiko Moriyama

  • A 271.8 nm deep-ultraviolet laser diode for room temperature operation

    Ziyi Zhang;Ziyi Zhang;Maki Kushimoto;Tadayoshi Sakai;Naoharu Sugiyama

  • Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

    T. Mizuno;S. Takagi;N. Sugiyama;H. Satake

  • Si-SiGe semiconductor device and method of fabricating the same

    Seiji Imai;Yoshiko Hiraoka;Atsushi Kurobe;Naoharu Sugiyama

  • A Novel Fabrication Technique of Ultrathin and Relaxed SiGe Buffer Layers with High Ge Fraction for Sub-100 nm Strained Silicon-on-Insulator MOSFETs

    Tsutomu Tezuka;Naoharu Sugiyama;Tomohisa Mizuno;Masamichi Suzuki

  • Non-volatile Si quantum memory with self-aligned doubly-stacked dots

    R. Ohba;N. Sugiyama;K. Uchida;J. Koga

  • Device structures and carrier transport properties of advanced CMOS using high mobility channels

    S. Takagi;S. Takagi;T. Tezuka;T. Irisawa;S. Nakaharai

  • Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same

    Naoharu Sugiyama;Tsutomu Tezuka;Riichi Katoh;Atsushi Kurobe

  • High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

    T. Maeda;K. Ikeda;S. Nakaharai;T. Tezuka

  • Semiconductor device and memory device

    Naoharu Sugiyama;Atsushi Kurobe

  • High-mobility strained SiGe-on-insulator pMOSFETs with Ge-rich surface channels fabricated by local condensation technique

    T. Tezuka;S. Nakaharai;Y. Moriyama;N. Sugiyama

  • Gate dielectric formation and MIS interface characterization on Ge

    S. Takagi;T. Maeda;N. Taoka;M. Nishizawa

  • Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

    S. Takagi;T. Mizuno;T. Tezuka;N. Sugiyama

  • Modulation of NiGe∕Ge Schottky barrier height by sulfur segregation during Ni germanidation

    Keiji Ikeda;Yoshimi Yamashita;Naoharu Sugiyama;Noriyuki Taoka

  • [110]-surface strained-SOI CMOS devices

    T. Mizuno;N. Sugiyama;T. Tezuka;Y. Moriyama

  • High-performance strained Si-on-insulator MOSFETs by novel fabrication processes utilizing Ge-condensation technique

    T. Tezuka;N. Sugiyama;T. Mizuno;S. Takagi

  • Semiconductor devices and methods for producing semiconductor devices

    Naoharu Sugiyama;Tomohisa Mizuno;Shinichi Takagi;Atsushi Kurobe

  • High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology

    T. Mizuno;N. Sugiyama;T. Tezuka;T. Numata

Frequent Co-Authors

Shinichi Takagi
Shinichi Takagi University of Tokyo
Tsutomu Tezuka
Tsutomu Tezuka Toshiba (Japan)
Junji Koga
Junji Koga Toshiba (Japan)
Hiroshi Iwai
Hiroshi Iwai Tokyo Institute of Technology
Akira Toriumi
Akira Toriumi University of Tokyo
Mitsuru Takenaka
Mitsuru Takenaka University of Tokyo
Akira Toriumi
Akira Toriumi University of Tokyo

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