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Materials Science

D-Index
76
Citations
27623
World Ranking
3221
National Ranking
902

Physics

D-Index
76
Citations
27656
World Ranking
3291
National Ranking
1557

Research.com Recognitions

  • 2020 - Member of the National Academy of Engineering For contributions to development and commercialization of nanoscale characterization methods, and their application in materials science.
  • 2009 - Fellow of the Materials Research Society
  • 1995 - MRS Medal, Materials Research Society For pioneering experiments on the role of atomic structure, surface stress, and surfactants in heteroepitaxial growth

Overview

Rudolf M. Tromp is affiliated with IBM in the United States. Their research focuses primarily on materials science and biochemistry, genetics, and molecular biology. Within these fields, their work delves into subfields such as materials chemistry, surfaces, coatings and films, structural biology, electrical and electronic engineering, and atomic and molecular physics and optics.

Their research topics include electron and X-ray spectroscopy techniques, advanced electron microscopy techniques and applications, graphene research and applications, 2D materials and applications, advancements in photolithography techniques, surface and thin film phenomena, and integrated circuits and semiconductor failure analysis.

Frequent co-authors in their work include Sense Jan van der Molen, Thomas Juffmann, Peter S. Neu, E. E. Krasovskii, and W. G. Stam.

Rudolf M. Tromp has published extensively in several venues, with multiple articles in Ultramicroscopy. Other common publication venues include Physical Review B, APL Materials, arXiv (Cornell University), and ACS Applied Materials & Interfaces.

  • Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography, 2020, ACS Applied Materials & Interfaces
  • TAdeJong/figures-imaging-moire-deformations: Initial test release, 2021, Zenodo (CERN European Organization for Nuclear Research)
  • Energy-dispersive X-ray spectroscopy in a low energy electron microscope, 2024, Ultramicroscopy
  • Low energy electron microscopy at cryogenic temperatures, 2023, Ultramicroscopy
  • Electron transmission and mean free path in molybdenum disulfide at electron-volt energies, 2023, Physical Review B

Their contributions to nanoscale characterization methods and their applications in materials science have been formally recognized. This includes election as a Member of the National Academy of Engineering in 2020, specifically for contributions to the development and commercialization of nanoscale characterization techniques. They were also named a Fellow of the Materials Research Society in 2009 and received the MRS Medal in 1995 for pioneering experiments related to atomic structure, surface stress, and surfactants in heteroepitaxial growth.

Best Publications

  • Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

    Xuesong Li;Carl W. Magnuson;Archana Venugopal;Rudolf M. Tromp

  • Surface Electronic Structure of Si(111)-(7 × 7) Resolved in Real Space

    R. J. Hamers;R. M. Tromp;J. E. Demuth

  • Surfactants in epitaxial growth.

    M. Copel;M. C. Reuter;Efthimios Kaxiras;R. M. Tromp

  • Surface electronic structure of Si(111)-(7x7) resolved in real space.

    Hamers Rj;Tromp Rm;Demuth Je

  • Scanning tunneling microscopy of Si(001).

    R. J. Hamers;R. M. Tromp;J. E. Demuth

  • The influence of the surface migration of gold on the growth of silicon nanowires

    J. B. Hannon;S. Kodambaka;F. M. Ross;R. M. Tromp

  • Shape transition in growth of strained islands: Spontaneous formation of quantum wires.

    J. Tersoff;R. M. Tromp

  • Growth dynamics of pentacene thin films

    Frank-J. Meyer zu Heringdorf;M. C. Reuter;R. M. Tromp

  • Dynamic microscopy of nanoscale cluster growth at the solid–liquid interface

    MJ Williamson;RM Tromp;Philippe Vereecken;R Hull

  • Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

    F. M. Ross;J. Tersoff;R. M. Tromp

  • Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy

    R. M. Tromp;R. J. Hamers;J. E. Demuth

  • Transition States Between Pyramids and Domes During Ge/Si Island Growth.

    F. M. Ross;R. M. Tromp;M. C. Reuter

  • Critical island size for layer-by-layer growth.

    J. Tersoff;A. W. Denier van der Gon;R. M. Tromp

  • High-temperature SiO2 decomposition at the SiO2/Si interface.

    R. Tromp;G. W. Rubloff;P. Balk;F. K. LeGoues

  • Influence of surfactants in Ge and Si epitaxy on Si(001).

    M. Copel;M. C. Reuter;M. Horn von Hoegen;R. M. Tromp

  • Electronic and geometric structure of Si(111)-(7×7) and Si(001) surfaces

    R.J. Hamers;R.M. Tromp;J.E. Demuth

  • Defect self-annihilation in surfactant-mediated epitaxial growth.

    M. Horn-Von Hoegen;F. K. Legoues;M. Copel;M. C. Reuter

  • Cyclic growth of strain-relaxed islands.

    F. K. LeGoues;M. C. Reuter;J. Tersoff;M. Hammar

  • Local electron states and surface geometry of Si(111)-√3 √3 Ag

    E. J. van Loenen;J. E. Demuth;R. M. Tromp;R. J. Hamers

  • Local dimer exchange in surfactant-mediated epitaxial growth.

    R. M. Tromp;M. C. Reuter

Frequent Co-Authors

Mark C. Reuter
Mark C. Reuter IBM (United States)
Matthew Copel
Matthew Copel IBM (United States)
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)
Jerry Tersoff
Jerry Tersoff IBM (United States)
Robert J. Hamers
Robert J. Hamers University of Wisconsin–Madison
J. F. van der Veen
J. F. van der Veen Paul Scherrer Institute
Robert Hull
Robert Hull Rensselaer Polytechnic Institute
Eric A. Stach
Eric A. Stach University of Pennsylvania
Gary W. Rubloff
Gary W. Rubloff University of Maryland, College Park

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