Rudolf M. Tromp publications per year

The chart shows the history of publications by Rudolf M. Tromp between 1977 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Rudolf M. Tromp published across 49 years, from 1977 to 2025, averaging 6.2 papers a year. Output peaked at 15 publications in 1986. 10 of the 306 publications appeared in the last two years.

No. of publications

5 10 15

1977 2025

306 publications in total across all disciplines

View publications per year as a table

Rudolf M. Tromp: publications per year, 1977 to 2025
Year	Publications
1977	1
1978	0
1979	3
1980	2
1981	6
1982	4
1983	7
1984	7
1985	8
1986	15
1987	4
1988	11
1989	6
1990	5
1991	6
1992	7
1993	13
1994	9
1995	10
1996	12
1997	4
1998	9
1999	7
2000	6
2001	3
2002	10
2003	7
2004	4
2005	4
2006	4
2007	6
2008	11
2009	5
2010	8
2011	10
2012	8
2013	7
2014	2
2015	11
2016	3
2017	5
2018	5
2019	7
2020	2
2021	5
2022	0
2023	7
2024	3
2025	7
Total	306

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Rudolf M. Tromp publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Rudolf M. Tromp sits on this spectrum.

No. of scientists

200 400 600 800

50–69 publications 1,163+

This scientist: 265 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table

Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications	Scientists	This scientist
50–69	28
70–89	152
90–109	356
110–129	487
130–149	723
150–169	835
170–189	850
190–209	891
210–229	862
230–249	766
250–269	726	265
270–289	665
290–309	593
310–329	537
330–349	477
350–369	440
370–389	356
390–409	321
410–429	256
430–449	246
450–469	216
470–489	212
490–509	174
510–529	194
530–549	162
550–569	131
570–589	111
590–609	103
610–629	99
630–649	77
650–669	92
670–689	56
690–709	53
710–729	53
730–749	38
750–769	52
770–789	43
790–809	38
810–829	34
830–849	25
850–869	18
870–889	20
890–909	24
910–929	27
930–949	20
950–969	17
970–989	10
990–1,009	16
1,010–1,029	13
1,030–1,049	12
1,050–1,069	9
1,070–1,089	8
1,090–1,109	7
1,110–1,129	9
1,130–1,149	2
1,150–1,162	5
1,163+	100

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Rudolf M. Tromp D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Rudolf M. Tromp sits on this spectrum.

No. of scientists

200 400 600

40–41 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table

Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index	Scientists	This scientist
40–41	211
42–43	450
44–45	612
46–47	612
48–49	598
50–51	657
52–53	667
54–55	621
56–57	597
58–59	610
60–61	587
62–63	606
64–65	533
66–67	490
68–69	469
70–71	378
72–73	421
74–75	359
76–77	323	76
78–79	299
80–81	230
82–83	210
84–85	195
86–87	203
88–89	175
90–91	175
92–93	142
94–95	121
96–97	117
98–99	107
100–101	88
102–103	85
104–105	68
106–107	62
108–109	57
110–111	45
112–113	49
114–115	50
116–117	34
118–119	38
120–121	37
122–123	29
124–125	28
126–127	24
128–129	33
130–131	28
132–133	21
134–135	20
136–137	23
138–139	17
140–141	12
142–143	17
144–145	21
146–147	13
148–149	11
150–151	14
152–153	13
154–155	9
156–157	10
158–159	7
160–161	4
162–163	4
164	3
165+	98

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Research.com Recognitions

2020 - Member of the National Academy of Engineering For contributions to development and commercialization of nanoscale characterization methods, and their application in materials science.
2009 - Fellow of the Materials Research Society
1995 - MRS Medal, Materials Research Society For pioneering experiments on the role of atomic structure, surface stress, and surfactants in heteroepitaxial growth

Overview

Rudolf M. Tromp is affiliated with IBM in the United States. Their research focuses primarily on materials science and biochemistry, genetics, and molecular biology. Within these fields, their work delves into subfields such as materials chemistry, surfaces, coatings and films, structural biology, electrical and electronic engineering, and atomic and molecular physics and optics.

Their research topics include electron and X-ray spectroscopy techniques, advanced electron microscopy techniques and applications, graphene research and applications, 2D materials and applications, advancements in photolithography techniques, surface and thin film phenomena, and integrated circuits and semiconductor failure analysis.

Frequent co-authors in their work include Sense Jan van der Molen, Thomas Juffmann, Peter S. Neu, E. E. Krasovskii, and W. G. Stam.

Rudolf M. Tromp has published extensively in several venues, with multiple articles in Ultramicroscopy. Other common publication venues include Physical Review B, APL Materials, arXiv (Cornell University), and ACS Applied Materials & Interfaces.

Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography, 2020, ACS Applied Materials & Interfaces
TAdeJong/figures-imaging-moire-deformations: Initial test release, 2021, Zenodo (CERN European Organization for Nuclear Research)
Energy-dispersive X-ray spectroscopy in a low energy electron microscope, 2024, Ultramicroscopy
Low energy electron microscopy at cryogenic temperatures, 2023, Ultramicroscopy
Electron transmission and mean free path in molybdenum disulfide at electron-volt energies, 2023, Physical Review B

Their contributions to nanoscale characterization methods and their applications in materials science have been formally recognized. This includes election as a Member of the National Academy of Engineering in 2020, specifically for contributions to the development and commercialization of nanoscale characterization techniques. They were also named a Fellow of the Materials Research Society in 2009 and received the MRS Medal in 1995 for pioneering experiments related to atomic structure, surface stress, and surfactants in heteroepitaxial growth.

Best Publications

Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

Xuesong Li;Carl W. Magnuson;Archana Venugopal;Rudolf M. Tromp

1611
Citations
Surface Electronic Structure of Si(111)-(7 × 7) Resolved in Real Space

R. J. Hamers;R. M. Tromp;J. E. Demuth

1468
Citations
Surfactants in epitaxial growth.

M. Copel;M. C. Reuter;Efthimios Kaxiras;R. M. Tromp

1445
Citations
Surface electronic structure of Si(111)-(7x7) resolved in real space.

Hamers Rj;Tromp Rm;Demuth Je

1195
Citations
Scanning tunneling microscopy of Si(001).

R. J. Hamers;R. M. Tromp;J. E. Demuth

1125
Citations
The influence of the surface migration of gold on the growth of silicon nanowires

J. B. Hannon;S. Kodambaka;F. M. Ross;R. M. Tromp

1119
Citations
Shape transition in growth of strained islands: Spontaneous formation of quantum wires.

J. Tersoff;R. M. Tromp

1109
Citations
Growth dynamics of pentacene thin films

Frank-J. Meyer zu Heringdorf;M. C. Reuter;R. M. Tromp

983
Citations
Dynamic microscopy of nanoscale cluster growth at the solid–liquid interface

MJ Williamson;RM Tromp;Philippe Vereecken;R Hull

927
Citations
Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

F. M. Ross;J. Tersoff;R. M. Tromp

891
Citations
Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy

R. M. Tromp;R. J. Hamers;J. E. Demuth

886
Citations
Transition States Between Pyramids and Domes During Ge/Si Island Growth.

F. M. Ross;R. M. Tromp;M. C. Reuter

588
Citations
Critical island size for layer-by-layer growth.

J. Tersoff;A. W. Denier van der Gon;R. M. Tromp

501
Citations
High-temperature SiO2 decomposition at the SiO2/Si interface.

R. Tromp;G. W. Rubloff;P. Balk;F. K. LeGoues

465
Citations
Influence of surfactants in Ge and Si epitaxy on Si(001).

M. Copel;M. C. Reuter;M. Horn von Hoegen;R. M. Tromp

407
Citations
Electronic and geometric structure of Si(111)-(7×7) and Si(001) surfaces

R.J. Hamers;R.M. Tromp;J.E. Demuth

333
Citations
Defect self-annihilation in surfactant-mediated epitaxial growth.

M. Horn-Von Hoegen;F. K. Legoues;M. Copel;M. C. Reuter

322
Citations
Cyclic growth of strain-relaxed islands.

F. K. LeGoues;M. C. Reuter;J. Tersoff;M. Hammar

294
Citations
Local electron states and surface geometry of Si(111)-√3 √3 Ag

E. J. van Loenen;J. E. Demuth;R. M. Tromp;R. J. Hamers

291
Citations
Local dimer exchange in surfactant-mediated epitaxial growth.

R. M. Tromp;M. C. Reuter

291
Citations