World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
76
Citations
27623
World Ranking
3219
National Ranking
900

Physics

D-Index
76
Citations
27656
World Ranking
3291
National Ranking
1557

Rudolf M. Tromp publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Rudolf M. Tromp sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 265 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Rudolf M. Tromp D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Rudolf M. Tromp sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2020 - Member of the National Academy of Engineering For contributions to development and commercialization of nanoscale characterization methods, and their application in materials science.
  • 2009 - Fellow of the Materials Research Society
  • 1995 - MRS Medal, Materials Research Society For pioneering experiments on the role of atomic structure, surface stress, and surfactants in heteroepitaxial growth

Overview

Rudolf M. Tromp is affiliated with IBM in the United States. Their research focuses primarily on materials science and biochemistry, genetics, and molecular biology. Within these fields, their work delves into subfields such as materials chemistry, surfaces, coatings and films, structural biology, electrical and electronic engineering, and atomic and molecular physics and optics.

Their research topics include electron and X-ray spectroscopy techniques, advanced electron microscopy techniques and applications, graphene research and applications, 2D materials and applications, advancements in photolithography techniques, surface and thin film phenomena, and integrated circuits and semiconductor failure analysis.

Frequent co-authors in their work include Sense Jan van der Molen, Thomas Juffmann, Peter S. Neu, E. E. Krasovskii, and W. G. Stam.

Rudolf M. Tromp has published extensively in several venues, with multiple articles in Ultramicroscopy. Other common publication venues include Physical Review B, APL Materials, arXiv (Cornell University), and ACS Applied Materials & Interfaces.

  • Key Role of Very Low Energy Electrons in Tin-Based Molecular Resists for Extreme Ultraviolet Nanolithography, 2020, ACS Applied Materials & Interfaces
  • TAdeJong/figures-imaging-moire-deformations: Initial test release, 2021, Zenodo (CERN European Organization for Nuclear Research)
  • Energy-dispersive X-ray spectroscopy in a low energy electron microscope, 2024, Ultramicroscopy
  • Low energy electron microscopy at cryogenic temperatures, 2023, Ultramicroscopy
  • Electron transmission and mean free path in molybdenum disulfide at electron-volt energies, 2023, Physical Review B

Their contributions to nanoscale characterization methods and their applications in materials science have been formally recognized. This includes election as a Member of the National Academy of Engineering in 2020, specifically for contributions to the development and commercialization of nanoscale characterization techniques. They were also named a Fellow of the Materials Research Society in 2009 and received the MRS Medal in 1995 for pioneering experiments related to atomic structure, surface stress, and surfactants in heteroepitaxial growth.

Best Publications

  • Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

    Xuesong Li;Carl W. Magnuson;Archana Venugopal;Rudolf M. Tromp

  • Surface Electronic Structure of Si(111)-(7 × 7) Resolved in Real Space

    R. J. Hamers;R. M. Tromp;J. E. Demuth

  • Surfactants in epitaxial growth.

    M. Copel;M. C. Reuter;Efthimios Kaxiras;R. M. Tromp

  • Surface electronic structure of Si(111)-(7x7) resolved in real space.

    Hamers Rj;Tromp Rm;Demuth Je

  • Scanning tunneling microscopy of Si(001).

    R. J. Hamers;R. M. Tromp;J. E. Demuth

  • The influence of the surface migration of gold on the growth of silicon nanowires

    J. B. Hannon;S. Kodambaka;F. M. Ross;R. M. Tromp

  • Shape transition in growth of strained islands: Spontaneous formation of quantum wires.

    J. Tersoff;R. M. Tromp

  • Growth dynamics of pentacene thin films

    Frank-J. Meyer zu Heringdorf;M. C. Reuter;R. M. Tromp

  • Dynamic microscopy of nanoscale cluster growth at the solid–liquid interface

    MJ Williamson;RM Tromp;Philippe Vereecken;R Hull

  • Coarsening of Self-Assembled Ge Quantum Dots on Si(001)

    F. M. Ross;J. Tersoff;R. M. Tromp

  • Si(001) Dimer Structure Observed with Scanning Tunneling Microscopy

    R. M. Tromp;R. J. Hamers;J. E. Demuth

  • Transition States Between Pyramids and Domes During Ge/Si Island Growth.

    F. M. Ross;R. M. Tromp;M. C. Reuter

  • Critical island size for layer-by-layer growth.

    J. Tersoff;A. W. Denier van der Gon;R. M. Tromp

  • High-temperature SiO2 decomposition at the SiO2/Si interface.

    R. Tromp;G. W. Rubloff;P. Balk;F. K. LeGoues

  • Influence of surfactants in Ge and Si epitaxy on Si(001).

    M. Copel;M. C. Reuter;M. Horn von Hoegen;R. M. Tromp

  • Electronic and geometric structure of Si(111)-(7×7) and Si(001) surfaces

    R.J. Hamers;R.M. Tromp;J.E. Demuth

  • Defect self-annihilation in surfactant-mediated epitaxial growth.

    M. Horn-Von Hoegen;F. K. Legoues;M. Copel;M. C. Reuter

  • Cyclic growth of strain-relaxed islands.

    F. K. LeGoues;M. C. Reuter;J. Tersoff;M. Hammar

  • Local electron states and surface geometry of Si(111)-√3 √3 Ag

    E. J. van Loenen;J. E. Demuth;R. M. Tromp;R. J. Hamers

  • Local dimer exchange in surfactant-mediated epitaxial growth.

    R. M. Tromp;M. C. Reuter

Frequent Co-Authors

Mark C. Reuter
Mark C. Reuter IBM (United States)
Matthew Copel
Matthew Copel IBM (United States)
Francoise K. LeGoues
Francoise K. LeGoues IBM (United States)
Jerry Tersoff
Jerry Tersoff IBM (United States)
Robert J. Hamers
Robert J. Hamers University of Wisconsin–Madison
J. F. van der Veen
J. F. van der Veen Paul Scherrer Institute
Robert Hull
Robert Hull Rensselaer Polytechnic Institute
Eric A. Stach
Eric A. Stach University of Pennsylvania
Gary W. Rubloff
Gary W. Rubloff University of Maryland, College Park

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