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Materials Science

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46
Citations
9984
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Research.com Recognitions

  • 2002 - Fellow of American Physical Society (APS) Citation For pioneering studies of atomicscale, kinetic and thermodynamic aspects of the morphology of Si surfaces, and significant innovations in scanning tunneling microscopy

Overview

Brian S. Swartzentruber is affiliated with Sandia National Laboratories in the United States, where they contribute to research in materials science and surface physics. Their work focuses on the atomic-scale understanding of surface morphology, particularly involving silicon surfaces.

In 2002, they were recognized as a Fellow of the American Physical Society (APS). The award citation references their pioneering studies on atomic-scale kinetic and thermodynamic aspects of Si surface morphology, alongside significant innovations in scanning tunneling microscopy.

Their research primarily intersects with topics related to surface science and microscopy techniques. Although specific papers, coauthors, and publication venues are not detailed here, their contributions have informed various studies on atomic-scale surface properties and characterization methods.

Brian S. Swartzentruber's affiliation with a national laboratory situates their work within applied and fundamental research aimed at advancing materials knowledge through experimental and theoretical approaches.

Best Publications

  • Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001).

    Y.-W. Mo;D. E. Savage;B. S. Swartzentruber;M. G. Lagally

  • Atomic-scale surface modifications using a tunnelling microscope

    R. S. Becker;J. A. Golovchenko;B. S. Swartzentruber

  • Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces

    B. S. Swartzentruber;Y.‐W. Mo;M. B. Webb;M. G. Lagally

  • Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy

    B. S. Swartzentruber

  • Growth and equilibrium structures in the epitaxy of Si on Si(001).

    Y.-W. Mo;B. S. Swartzentruber;R. Kariotis;M. B. Webb

  • Direct determination of step and kink energies on vicinal Si(001).

    B. S. Swartzentruber;Y.-W. Mo;R. Kariotis;M. G. Lagally

  • Real-Space Observation of Surface States on Si(111) 7×7 with the Tunneling Microscope

    R. S. Becker;Jene Andrew Golovchenko;D. R. Hamann;B. S. Swartzentruber

  • Electron interferometry at crystal surfaces.

    R. S. Becker;Jene Andrew Golovchenko;B. S. Swartzentruber

  • Tunneling images of atomic steps on the Si(111)7×7 surface

    R. S. Becker;Jene Andrew Golovchenko;E. G. McRae;B. S. Swartzentruber

  • Tunneling images of germanium surface reconstructions and phase boundaries.

    R. S. Becker;Jene Andrew Golovchenko;B. S. Swartzentruber

  • Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy

    R. S. Becker;B. S. Swartzentruber;J. S. Vickers;T. Klitsner

  • Behavior of steps on Si(001) as a function of vicinality

    B. S. Swartzentruber;N. Kitamura;M. G. Lagally;M. B. Webb

  • Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si(001)

    Y.‐W. Mo;R. Kariotis;B. S. Swartzentruber;M. B. Webb

  • Unusually strong space-charge-limited current in thin wires.

    A. Alec Talin;François Léonard;B. S. Swartzentruber;Xin Wang

  • New reconstructions on silicon (111) surfaces.

    R. S. Becker;Jene Andrew Golovchenko;G. S. Higashi;B. S. Swartzentruber

  • Diameter-dependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes.

    François Léonard;A. Alec Talin;B. S. Swartzentruber;S. T. Picraux

  • Donor-acceptor biomorphs from the ionic self-assembly of porphyrins.

    Kathleen E. Martin;Zhongchun Wang;Tito Busani;Robert M. Garcia

  • Geometric and local electronic structure of Si(111)-As.

    Russell S. Becker;Brian S. Swartzentruber;James S. Vickers;Mark S. Hybertsen

  • Surface step configurations under strain: kinetics and step-step interactions

    M.B. Webb;F.K. Men;B.S. Swartzentruber;R. Kariotis

  • Experimental and Theoretical Study of the Rotation of Si Ad-dimers on the Si(100) Surface.

    B. S. Swartzentruber;A. P. Smith;Hannes Jonsson;Hannes Jonsson

Frequent Co-Authors

Max G. Lagally
Max G. Lagally University of Wisconsin–Madison
S. T. Picraux
S. T. Picraux Los Alamos National Laboratory
George T. Wang
George T. Wang Sandia National Laboratories
Norman C. Bartelt
Norman C. Bartelt Sandia National Laboratories
Jene Andrew Golovchenko
Jene Andrew Golovchenko Harvard University
A. Alec Talin
A. Alec Talin Sandia National Laboratories
François Léonard
François Léonard Sandia National Laboratories
Jian Yu Huang
Jian Yu Huang Yanshan University
Shadi A. Dayeh
Shadi A. Dayeh University of California, San Diego
Peter J. Feibelman
Peter J. Feibelman Sandia National Laboratories

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