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D-Index & Metrics

Materials Science

D-Index
46
Citations
9984
World Ranking
11341
National Ranking
2660

Brian S. Swartzentruber publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Brian S. Swartzentruber sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 132 publications — 9th percentile

9% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Brian S. Swartzentruber D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Brian S. Swartzentruber sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2002 - Fellow of American Physical Society (APS) Citation For pioneering studies of atomicscale, kinetic and thermodynamic aspects of the morphology of Si surfaces, and significant innovations in scanning tunneling microscopy

Overview

Brian S. Swartzentruber is affiliated with Sandia National Laboratories in the United States, where they contribute to research in materials science and surface physics. Their work focuses on the atomic-scale understanding of surface morphology, particularly involving silicon surfaces.

In 2002, they were recognized as a Fellow of the American Physical Society (APS). The award citation references their pioneering studies on atomic-scale kinetic and thermodynamic aspects of Si surface morphology, alongside significant innovations in scanning tunneling microscopy.

Their research primarily intersects with topics related to surface science and microscopy techniques. Although specific papers, coauthors, and publication venues are not detailed here, their contributions have informed various studies on atomic-scale surface properties and characterization methods.

Brian S. Swartzentruber's affiliation with a national laboratory situates their work within applied and fundamental research aimed at advancing materials knowledge through experimental and theoretical approaches.

Best Publications

  • Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001).

    Y.-W. Mo;D. E. Savage;B. S. Swartzentruber;M. G. Lagally

  • Atomic-scale surface modifications using a tunnelling microscope

    R. S. Becker;J. A. Golovchenko;B. S. Swartzentruber

  • Scanning tunneling microscopy studies of structural disorder and steps on Si surfaces

    B. S. Swartzentruber;Y.‐W. Mo;M. B. Webb;M. G. Lagally

  • Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy

    B. S. Swartzentruber

  • Growth and equilibrium structures in the epitaxy of Si on Si(001).

    Y.-W. Mo;B. S. Swartzentruber;R. Kariotis;M. B. Webb

  • Direct determination of step and kink energies on vicinal Si(001).

    B. S. Swartzentruber;Y.-W. Mo;R. Kariotis;M. G. Lagally

  • Real-Space Observation of Surface States on Si(111) 7×7 with the Tunneling Microscope

    R. S. Becker;Jene Andrew Golovchenko;D. R. Hamann;B. S. Swartzentruber

  • Electron interferometry at crystal surfaces.

    R. S. Becker;Jene Andrew Golovchenko;B. S. Swartzentruber

  • Tunneling images of atomic steps on the Si(111)7×7 surface

    R. S. Becker;Jene Andrew Golovchenko;E. G. McRae;B. S. Swartzentruber

  • Tunneling images of germanium surface reconstructions and phase boundaries.

    R. S. Becker;Jene Andrew Golovchenko;B. S. Swartzentruber

  • Dimer–adatom–stacking-fault (DAS) and non-DAS (111) semiconductor surfaces: A comparison of Ge(111)-c(2×8) to Si(111)-(2×2), -(5×5), -(7×7), and -(9×9) with scanning tunneling microscopy

    R. S. Becker;B. S. Swartzentruber;J. S. Vickers;T. Klitsner

  • Behavior of steps on Si(001) as a function of vicinality

    B. S. Swartzentruber;N. Kitamura;M. G. Lagally;M. B. Webb

  • Scanning tunneling microscopy study of diffusion, growth, and coarsening of Si on Si(001)

    Y.‐W. Mo;R. Kariotis;B. S. Swartzentruber;M. B. Webb

  • Unusually strong space-charge-limited current in thin wires.

    A. Alec Talin;François Léonard;B. S. Swartzentruber;Xin Wang

  • New reconstructions on silicon (111) surfaces.

    R. S. Becker;Jene Andrew Golovchenko;G. S. Higashi;B. S. Swartzentruber

  • Diameter-dependent electronic transport properties of Au-catalyst/Ge-nanowire Schottky diodes.

    François Léonard;A. Alec Talin;B. S. Swartzentruber;S. T. Picraux

  • Donor-acceptor biomorphs from the ionic self-assembly of porphyrins.

    Kathleen E. Martin;Zhongchun Wang;Tito Busani;Robert M. Garcia

  • Geometric and local electronic structure of Si(111)-As.

    Russell S. Becker;Brian S. Swartzentruber;James S. Vickers;Mark S. Hybertsen

  • Surface step configurations under strain: kinetics and step-step interactions

    M.B. Webb;F.K. Men;B.S. Swartzentruber;R. Kariotis

  • Experimental and Theoretical Study of the Rotation of Si Ad-dimers on the Si(100) Surface.

    B. S. Swartzentruber;A. P. Smith;Hannes Jonsson;Hannes Jonsson

Frequent Co-Authors

Max G. Lagally
Max G. Lagally University of Wisconsin–Madison
S. T. Picraux
S. T. Picraux Los Alamos National Laboratory
George T. Wang
George T. Wang Sandia National Laboratories
Norman C. Bartelt
Norman C. Bartelt Sandia National Laboratories
Jene Andrew Golovchenko
Jene Andrew Golovchenko Harvard University
A. Alec Talin
A. Alec Talin Sandia National Laboratories
François Léonard
François Léonard Sandia National Laboratories
Jian Yu Huang
Jian Yu Huang Yanshan University
Shadi A. Dayeh
Shadi A. Dayeh University of California, San Diego
Peter J. Feibelman
Peter J. Feibelman Sandia National Laboratories

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