World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
36
Citations
4715
World Ranking
8766
National Ranking
2430

George T. Wang publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where George T. Wang sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 208 publications — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

George T. Wang D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where George T. Wang sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 36 D-Index — 13th percentile

13% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

George T. Wang is affiliated with Sandia National Laboratories in the United States. Their research spans multiple fields, primarily in engineering, materials science, and physics and astronomy.

Their work encompasses several subfields, including electrical and electronic engineering, materials chemistry, biomedical engineering, atomic and molecular physics and optics, as well as electronic, optical, and magnetic materials.

Research topics covered by George T. Wang focus on semiconductor materials and devices, silicon nanostructures and photoluminescence, GaN-based semiconductor devices and materials, Ga2O3 and related materials, integrated circuits and semiconductor failure analysis, molecular junctions and nanostructures, and nanowire synthesis and applications.

Recent publications illustrate the range of their scientific contributions:

  • Ultralow Voltage GaN Vacuum Nanodiodes in Air, 2021, Nano Letters
  • Nonvolatile Voltage Controlled Molecular Spin-State Switching for Memory Applications, 2021, Magnetochemistry
  • Strong Coupling in All-Dielectric Intersubband Polaritonic Metasurfaces, 2020, Nano Letters
  • Reaction of BCl3 with H- and Cl-terminated Si(1 0 0) as a pathway for selective, monolayer doping through wet chemistry, 2020, Applied Surface Science
  • Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid, 2021, Nanotechnology

Frequent coauthors in their publications include:

  • Keshab Sapkota
  • K. S. Jones
  • Ping Lu
  • Dhamelyz Silva-Quiñones
  • Robert Butera

Key venues where George T. Wang has published multiple works are:

  • Nano Letters
  • Langmuir
  • ACS Applied Materials & Interfaces
  • Journal of Applied Physics
  • Magnetochemistry

Best Publications

  • GFP Reconstitution Across Synaptic Partners (GRASP) Defines Cell Contacts and Synapses in Living Nervous Systems

    Evan H. Feinberg;Miri K. VanHoven;Andres Bendesky;George Wang

  • Toward Smart and Ultra-Efficient Solid-State Lighting

    Jeffrey Y. Tsao;Mary H. Crawford;Michael E. Coltrin;Arthur J. Fischer

  • Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

    Qiming Li;Karl R. Westlake;Mary H. Crawford;Stephen R. Lee

  • Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition

    George T Wang;A Alec Talin;Donald J Werder;J Randall Creighton

  • Single-mode GaN nanowire lasers

    Qiming Li;Jeremy B Wright;Weng W Chow;Ting Shan Luk

  • Proton transfer reactions on semiconductor surfaces.

    Collin Mui;Joseph H. Han;George T. Wang;Charles B. Musgrave

  • Light-Emitting Metasurfaces: Simultaneous Control of Spontaneous Emission and Far-Field Radiation.

    Sheng Liu;Aleksandr Vaskin;Sadhvikas Addamane;Benjamin Leung

  • Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes

    Yuji Zhao;Houqiang Fu;George T. Wang;Shuji Nakamura

  • Tuning the surface charge properties of epitaxial InN nanowires.

    S. Zhao;S. Fathololoumi;K. H. Bevan;D. P. Liu

  • Photoluminescence, Thermal Transport, and Breakdown in Joule-Heated GaN Nanowires

    Tyler Westover;Reese Jones;J. Y. Huang;George Wang

  • Spatial distribution of defect luminescence in GaN nanowires.

    Qiming Li;George T. Wang

  • III-nitride core?shell nanowire arrayed solar cells

    Jonathan J Wierer;Qiming Li;Daniel D Koleske;Stephen R Lee

  • Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

    Changyi Li;Jeremy B. Wright;Sheng Liu;Ping Lu

  • Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array.

    James R. Riley;Sonal Padalkar;Qiming Li;Ping Lu

  • Nanoscale Effects on Heterojunction Electron Gases in GaN/AlGaN Core/Shell Nanowires

    Bryan M. Wong;François Léonard;Qiming Li;George T. Wang

  • Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires

    Qiming Li;George T. Wang

  • Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1.

    George T Wang;Collin Mui;Charles B Musgrave;Stacey F Bent

  • In situ nanomechanics of GaN nanowires.

    Jian Yu Huang;He Zheng;He Zheng;S X Mao;Qiming Li

  • Atom probe tomography of a-axis GaN nanowires: analysis of nonstoichiometric evaporation behavior.

    James R. Riley;Rodrigo A. Bernal;Qiming Li;Horacio Dante Espinosa

  • Elastic moduli of faceted aluminum nitride nanotubes measured by contact resonance atomic force microscopy.

    G Stan;C V Ciobanu;T P Thayer;G T Wang

  • Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films

    Qiming Li;George T. Wang

  • Example of a Thermodynamically Controlled Reaction on a Semiconductor Surface: Acetone on Ge(100)-2 × 1

    George T. Wang;Collin Mui;Charles B. Musgrave;Stacey F. Bent

  • Fundamental chemistry and modeling of group-III nitride MOVPE

    J. Randall Creighton;George T. Wang;Michael E. Coltrin

  • Single-mode lasing of GaN nanowire-pairs

    Huiwen Xu;Jeremy B. Wright;Ting Shan Luk;Jeffrey J. Figiel

  • Multi-colour nanowire photonic crystal laser pixels

    Jeremy B. Wright;Sheng Liu;George T. Wang;Qiming Li

  • Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire

    Qiming Li;Yong Lin;J. Randall Creighton;Jeffrey J. Figiel

  • GaN nanowire surface state observed using deep level optical spectroscopy

    A. Armstrong;Q. Li;Y. Lin;A. A. Talin

Frequent Co-Authors

Igal Brener
Igal Brener Sandia National Laboratories
Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
A. Alec Talin
A. Alec Talin Sandia National Laboratories
Luke F. Lester
Luke F. Lester Virginia Tech
Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
Steven R. J. Brueck
Steven R. J. Brueck University of New Mexico
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
François Léonard
François Léonard Sandia National Laboratories
Kevin S. Jones
Kevin S. Jones University of Florida
Brian S. Swartzentruber
Brian S. Swartzentruber Sandia National Laboratories

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