World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
47
Citations
10532
World Ranking
3176
National Ranking
1189

Mary H. Crawford publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mary H. Crawford sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 232 publications — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Mary H. Crawford D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mary H. Crawford sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 47 D-Index — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Mary H. Crawford is affiliated with Sandia National Laboratories in the United States. Their research primarily focuses on semiconductor materials and devices, with emphasis on gallium nitride (GaN)-based semiconductor technologies and related wide bandgap materials.

Their recent scholarly contributions include papers published between 2020 and 2022. Notable publications are:

  • Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions, 2022, IEEE Transactions on Electron Devices
  • Comprehensive characterization and analysis of hexagonal boron nitride on sapphire, 2021, AIP Advances
  • Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs, 2020, Applied Physics Letters
  • Low voltage drop tunnel junctions grown monolithically by MOCVD, 2021, Applied Physics Letters
  • Etched-and-Regrown GaN pn-Diodes With 1600 V Blocking Voltage, 2021, IEEE Journal of the Electron Devices Society

The scientist has collaborated frequently with several co-authors, including:

  • Andrew Armstrong
  • Andrew A. Allerman
  • Brendan Gunning
  • Robert Kaplar
  • Shamsul Arafin

Their work is commonly published in venues such as:

  • ECS Meeting Abstracts
  • Applied Physics Letters
  • IEEE Transactions on Electron Devices
  • AIP Advances
  • IEEE Journal of the Electron Devices Society

Mary H. Crawford's research spans various main fields of study, notably:

  • Physics and Astronomy
  • Materials Science
  • Engineering

Within those, their subfields of expertise include:

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Atomic and Molecular Physics, and Optics

The primary research topics they focus on cover the following areas:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Silicon Carbide Semiconductor Technologies
  • Semiconductor Quantum Structures and Devices
  • Graphene research and applications
  • Diamond and Carbon-based Materials Research

Additionally, Mary H. Crawford has contributed to book publications through the Office of Scientific and Technical Information, notably a chapter titled III-Nitride Ultra-Wide Bandgap Electronic Devices (Chapter 12) published in 2020.

Best Publications

  • LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

    M.H. Crawford

  • Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

    Martin F. Schubert;Sameer Chhajed;Jong Kyu Kim;E. Fred Schubert

  • Research challenges to ultra-efficient inorganic solid-state lighting

    Julia M. Phillips;Michael E. Coltrin;Mary H. Crawford;Arthur J. Fischer

  • Toward Smart and Ultra-Efficient Solid-State Lighting

    Jeffrey Y. Tsao;Mary H. Crawford;Michael E. Coltrin;Arthur J. Fischer

  • Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

  • AlGaN/GaN quantum well ultraviolet light emitting diodes

    J. Han;M. H. Crawford;R. J. Shul;J. J. Figiel

  • Light-Extraction Enhancement of GaInN Light-Emitting Diodes by Graded-Refractive-Index Indium Tin Oxide Anti-Reflection Contact†

    J. K. Kim;S. Chhajed;M. F. Schubert;E. F. Schubert

  • Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers

    W.W. Chow;K.D. Choquette;M.H. Crawford;K.L. Lear

  • Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

    Marc Achermann;Melissa A. Petruska;Daniel D. Koleske;Mary H. Crawford

  • Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

    Qi Dai;Qifeng Shan;Jing Wang;Sameer Chhajed

  • The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

    Di Zhu;Jiuru Xu;Ahmed N. Noemaun;Jong Kyu Kim

  • The band-gap bowing of AlxGa1−xN alloys

    S. R. Lee;A. F. Wright;M. H. Crawford;G. A. Petersen

  • Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

    A. J. Fischer;A. A. Allerman;M. H. Crawford;K. H. A. Bogart

  • The effect of H2 on morphology evolution during GaN metalorganic chemical vapor deposition

    J. Han;T.-B. Ng;R. M. Biefeld;M. H. Crawford

  • Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

    Qiming Li;Karl R. Westlake;Mary H. Crawford;Stephen R. Lee

  • Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

    Y. Xi;J.-Q. Xi;Th. Gessmann;J. M. Shah

  • Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

    A.A. Allerman;M.H. Crawford;A.J. Fischer;K.H.A. Bogart

  • Solid-State Lighting: An Integrated Human Factors, Technology, and Economic Perspective

    Jeffrey Y Tsao;Michael E Coltrin;Mary H Crawford;Jerry A Simmons

  • Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

    Andrew M. Armstrong;Mary H. Crawford;Asanka Jayawardena;Ayayi Ahyi

  • Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

    R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford

  • Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

Frequent Co-Authors

Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories
Robert Kaplar
Robert Kaplar Sandia National Laboratories
Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
Jung Han
Jung Han Yale University
Jaehee Cho
Jaehee Cho Jeonbuk National University
Kent D. Choquette
Kent D. Choquette University of Illinois at Urbana-Champaign
George T. Wang
George T. Wang Sandia National Laboratories
David M. Follstaedt
David M. Follstaedt Sandia National Laboratories

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