Mary H. Crawford is affiliated with Sandia National Laboratories in the United States. Their research primarily focuses on semiconductor materials and devices, with emphasis on gallium nitride (GaN)-based semiconductor technologies and related wide bandgap materials.
Their recent scholarly contributions include papers published between 2020 and 2022. Notable publications are:
The scientist has collaborated frequently with several co-authors, including:
Their work is commonly published in venues such as:
Mary H. Crawford's research spans various main fields of study, notably:
Within those, their subfields of expertise include:
The primary research topics they focus on cover the following areas:
Additionally, Mary H. Crawford has contributed to book publications through the Office of Scientific and Technical Information, notably a chapter titled III-Nitride Ultra-Wide Bandgap Electronic Devices (Chapter 12) published in 2020.
M.H. Crawford
Martin F. Schubert;Sameer Chhajed;Jong Kyu Kim;E. Fred Schubert
Julia M. Phillips;Michael E. Coltrin;Mary H. Crawford;Arthur J. Fischer
Jeffrey Y. Tsao;Mary H. Crawford;Michael E. Coltrin;Arthur J. Fischer
Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim
J. Han;M. H. Crawford;R. J. Shul;J. J. Figiel
J. K. Kim;S. Chhajed;M. F. Schubert;E. F. Schubert
W.W. Chow;K.D. Choquette;M.H. Crawford;K.L. Lear
Marc Achermann;Melissa A. Petruska;Daniel D. Koleske;Mary H. Crawford
Qi Dai;Qifeng Shan;Jing Wang;Sameer Chhajed
Di Zhu;Jiuru Xu;Ahmed N. Noemaun;Jong Kyu Kim
S. R. Lee;A. F. Wright;M. H. Crawford;G. A. Petersen
A. J. Fischer;A. A. Allerman;M. H. Crawford;K. H. A. Bogart
J. Han;T.-B. Ng;R. M. Biefeld;M. H. Crawford
Qiming Li;Karl R. Westlake;Mary H. Crawford;Stephen R. Lee
Y. Xi;J.-Q. Xi;Th. Gessmann;J. M. Shah
A.A. Allerman;M.H. Crawford;A.J. Fischer;K.H.A. Bogart
Jeffrey Y Tsao;Michael E Coltrin;Mary H Crawford;Jerry A Simmons
Andrew M. Armstrong;Mary H. Crawford;Asanka Jayawardena;Ayayi Ahyi
R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford
Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim
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