World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
3944
World Ranking
5655
National Ranking
1927

Andrew M. Armstrong publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Andrew M. Armstrong sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 207 publications — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Andrew M. Armstrong D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Andrew M. Armstrong sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 35 D-Index — 21st percentile

21% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Andrew M. Armstrong is affiliated with Sandia National Laboratories in the United States, contributing to research primarily in the fields of Engineering and Physics and Astronomy. Their work encompasses multiple subfields, including Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials, and Atomic and Molecular Physics, and Optics.

Their research focuses on semiconductor materials and devices with specific emphasis on GaN-based semiconductor devices and materials, Ga2O3 and related materials, semiconductor materials and devices, Silicon Carbide semiconductor technologies, metal and thin film mechanics, semiconductor quantum structures and devices, and radio frequency integrated circuit design.

Frequent publication venues for Armstrong include Applied Physics Letters with eight publications, ECS Meeting Abstracts with six, Journal of Applied Physics and arXiv (Cornell University) each with three, and IEEE Transactions on Electron Devices with two publications.

They have collaborated extensively with several researchers, most notably Andrew A. Allerman (30 publications), Brianna Klein (14), Robert Kaplar (13), Mary H. Crawford (12), and Siddharth Rajan (12).

Recent significant papers include:

  • Al-rich AlGaN based transistors, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions, 2022, IEEE Transactions on Electron Devices
  • Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress, 2021, Materials Today
  • X-ray topography characterization of gallium nitride substrates for power device development, 2020, Journal of Crystal Growth
  • Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3, 2023, Journal of Applied Physics

Armstrong has contributed to book publications as well, including a chapter entitled "III-Nitride Ultra-Wide Bandgap Electronic Devices (Chapter 12)" published in 2020 by the Office of Scientific and Technical Information.

Best Publications

  • Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    A. Armstrong;A. R. Arehart;D. Green;U. K. Mishra

  • Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

    Andrew M. Armstrong;Mary H. Crawford;Asanka Jayawardena;Ayayi Ahyi

  • Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

    R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford

  • An AlN/Al0.85Ga0.15N high electron mobility transistor

    Albert G. Baca;Andrew M. Armstrong;Andrew A. Allerman;Erica A. Douglas

  • Vertical GaN Power Diodes With a Bilayer Edge Termination

    Jeramy R. Dickerson;Andrew A. Allerman;Benjamin N. Bryant;Arthur J. Fischer

  • Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

    Andrew M. Armstrong;Benjamin N. Bryant;Mary H. Crawford;Daniel D. Koleske

  • Interband tunneling for hole injection in III-nitride ultraviolet emitters

    Yuewei Zhang;Sriram Krishnamoorthy;Jared M. Johnson;Fatih Akyol

  • Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters

    Yuewei Zhang;Sriram Krishnamoorthy;Jared M. Johnson;Fatih Akyol

  • Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

    Andrew Armstrong;Tania A. Henry;Daniel D. Koleske;Mary H. Crawford

  • High voltage and high current density vertical GaN power diodes

    A.M. Armstrong;A.A. Allerman;A.J. Fischer;M.P. King

  • Al-rich AlGaN based transistors

    Albert G. Baca;Andrew M. Armstrong;Brianna A. Klein;Andrew A. Allerman

  • Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

    A. Armstrong;C. Poblenz;D. S. Green;U. K. Mishra

  • Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

    Yuewei Zhang;Zane Jamal-Eddine;Fatih Akyol;Sanyam Bajaj

  • Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

    Unknown

  • Tunnel-injected sub-260 nm ultraviolet light emitting diodes

    Yuewei Zhang;Sriram Krishnamoorthy;Fatih Akyol;Sanyam Bajaj

  • Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

    S. DasGupta;Min Sun;A. Armstrong;R. J. Kaplar

  • GaN nanowire surface state observed using deep level optical spectroscopy

    A. Armstrong;Q. Li;Y. Lin;A. A. Talin

  • Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

    Andrew M. Armstrong;Mary H. Crawford;Daniel D. Koleske

  • Ohmic contacts to Al-rich AlGaN heterostructures

    E. A. Douglas;S. Reza;C. Sanchez;D. Koleske

  • High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

    Sanyam Bajaj;Andrew Allerman;Andrew Armstrong;Towhidur Razzak

  • RF Performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors With 80-nm Gates

    Albert G. Baca;Brianna A. Klein;Joel R. Wendt;Stefan M. Lepkowski

  • The influence of Al composition on point defect incorporation in AlGaN

    T. A. Henry;A. Armstrong;A. A. Allerman;M. H. Crawford

  • Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    Yuewei Zhang;Sriram Krishnamoorthy;Fatih Akyol;Andrew A. Allerman

  • Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

    Yuewei Zhang;Sriram Krishnamoorthy;Fatih Akyol;Andrew A. Allerman

Frequent Co-Authors

Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Robert Kaplar
Robert Kaplar Sandia National Laboratories
Albert G. Baca
Albert G. Baca Sandia National Laboratories
Siddharth Rajan
Siddharth Rajan The Ohio State University
A. Alec Talin
A. Alec Talin Sandia National Laboratories
Sriram Krishnamoorthy
Sriram Krishnamoorthy University of California, Santa Barbara
Steven A. Ringel
Steven A. Ringel The Ohio State University
James S. Speck
James S. Speck University of California, Santa Barbara
Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University

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