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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
35
Citations
3944
World Ranking
5655
National Ranking
1926

Overview

Andrew M. Armstrong is affiliated with Sandia National Laboratories in the United States, contributing to research primarily in the fields of Engineering and Physics and Astronomy. Their work encompasses multiple subfields, including Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Mechanics of Materials, and Atomic and Molecular Physics, and Optics.

Their research focuses on semiconductor materials and devices with specific emphasis on GaN-based semiconductor devices and materials, Ga2O3 and related materials, semiconductor materials and devices, Silicon Carbide semiconductor technologies, metal and thin film mechanics, semiconductor quantum structures and devices, and radio frequency integrated circuit design.

Frequent publication venues for Armstrong include Applied Physics Letters with eight publications, ECS Meeting Abstracts with six, Journal of Applied Physics and arXiv (Cornell University) each with three, and IEEE Transactions on Electron Devices with two publications.

They have collaborated extensively with several researchers, most notably Andrew A. Allerman (30 publications), Brianna Klein (14), Robert Kaplar (13), Mary H. Crawford (12), and Siddharth Rajan (12).

Recent significant papers include:

  • Al-rich AlGaN based transistors, 2020, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions, 2022, IEEE Transactions on Electron Devices
  • Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress, 2021, Materials Today
  • X-ray topography characterization of gallium nitride substrates for power device development, 2020, Journal of Crystal Growth
  • Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3, 2023, Journal of Applied Physics

Armstrong has contributed to book publications as well, including a chapter entitled "III-Nitride Ultra-Wide Bandgap Electronic Devices (Chapter 12)" published in 2020 by the Office of Scientific and Technical Information.

Best Publications

  • Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    A. Armstrong;A. R. Arehart;D. Green;U. K. Mishra

  • Role of self-trapped holes in the photoconductive gain of β-gallium oxide Schottky diodes

    Andrew M. Armstrong;Mary H. Crawford;Asanka Jayawardena;Ayayi Ahyi

  • Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

    R. J. Kaplar;A. A. Allerman;A. M. Armstrong;M. H. Crawford

  • An AlN/Al0.85Ga0.15N high electron mobility transistor

    Albert G. Baca;Andrew M. Armstrong;Andrew A. Allerman;Erica A. Douglas

  • Vertical GaN Power Diodes With a Bilayer Edge Termination

    Jeramy R. Dickerson;Andrew A. Allerman;Benjamin N. Bryant;Arthur J. Fischer

  • Defect-reduction mechanism for improving radiative efficiency in InGaN/GaN light-emitting diodes using InGaN underlayers

    Andrew M. Armstrong;Benjamin N. Bryant;Mary H. Crawford;Daniel D. Koleske

  • Interband tunneling for hole injection in III-nitride ultraviolet emitters

    Yuewei Zhang;Sriram Krishnamoorthy;Jared M. Johnson;Fatih Akyol

  • Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters

    Yuewei Zhang;Sriram Krishnamoorthy;Jared M. Johnson;Fatih Akyol

  • Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodes

    Andrew Armstrong;Tania A. Henry;Daniel D. Koleske;Mary H. Crawford

  • High voltage and high current density vertical GaN power diodes

    A.M. Armstrong;A.A. Allerman;A.J. Fischer;M.P. King

  • Al-rich AlGaN based transistors

    Albert G. Baca;Andrew M. Armstrong;Brianna A. Klein;Andrew A. Allerman

  • Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

    A. Armstrong;C. Poblenz;D. S. Green;U. K. Mishra

  • Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

    Yuewei Zhang;Zane Jamal-Eddine;Fatih Akyol;Sanyam Bajaj

  • Demonstration of >6.0-kV Breakdown Voltage in Large Area Vertical GaN p-n Diodes With Step-Etched Junction Termination Extensions

    Unknown

  • Tunnel-injected sub-260 nm ultraviolet light emitting diodes

    Yuewei Zhang;Sriram Krishnamoorthy;Fatih Akyol;Sanyam Bajaj

  • Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs

    S. DasGupta;Min Sun;A. Armstrong;R. J. Kaplar

  • GaN nanowire surface state observed using deep level optical spectroscopy

    A. Armstrong;Q. Li;Y. Lin;A. A. Talin

  • Contribution of deep-level defects to decreasing radiative efficiency of InGaN/GaN quantum wells with increasing emission wavelength

    Andrew M. Armstrong;Mary H. Crawford;Daniel D. Koleske

  • Ohmic contacts to Al-rich AlGaN heterostructures

    E. A. Douglas;S. Reza;C. Sanchez;D. Koleske

  • High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

    Sanyam Bajaj;Andrew Allerman;Andrew Armstrong;Towhidur Razzak

  • RF Performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors With 80-nm Gates

    Albert G. Baca;Brianna A. Klein;Joel R. Wendt;Stefan M. Lepkowski

  • The influence of Al composition on point defect incorporation in AlGaN

    T. A. Henry;A. Armstrong;A. A. Allerman;M. H. Crawford

  • Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions

    Yuewei Zhang;Sriram Krishnamoorthy;Fatih Akyol;Andrew A. Allerman

  • Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

    Yuewei Zhang;Sriram Krishnamoorthy;Fatih Akyol;Andrew A. Allerman

Frequent Co-Authors

Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories
Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Albert G. Baca
Albert G. Baca Sandia National Laboratories
Siddharth Rajan
Siddharth Rajan The Ohio State University
A. Alec Talin
A. Alec Talin Sandia National Laboratories
Steven A. Ringel
Steven A. Ringel The Ohio State University
James S. Speck
James S. Speck University of California, Santa Barbara
Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
François Léonard
François Léonard Sandia National Laboratories
Aaron R. Arehart
Aaron R. Arehart The Ohio State University

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