World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
11055
World Ranking
1678
National Ranking
675

Materials Science

D-Index
60
Citations
11168
World Ranking
7166
National Ranking
1781

Research.com Recognitions

  • 2005 - Fellow of the American Association for the Advancement of Science (AAAS)

Overview

Steven A. Ringel is affiliated with The Ohio State University in the United States. Their research primarily focuses on materials science and engineering, emphasizing the study and development of advanced semiconductor materials and devices.

The scientist's work extensively covers subfields including Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, as well as Atomic and Molecular Physics, and Optics.

Key topics explored in their research consist of:

  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques
  • Semiconductor Quantum Structures and Devices
  • GaN-based semiconductor devices and materials
  • Solar cell performance optimization
  • Electronic and Structural Properties of Oxides

Steven A. Ringel's contributions to scientific literature include numerous papers published in reputable venues. Recent papers include:

  • "Probing Charge Transport and Background Doping in Metal-Organic Chemical Vapor Deposition-Grown (010) β-Ga₂O₃", 2020, physica status solidi (RRL) - Rapid Research Letters
  • "High electron density β-(Al0.17Ga0.83)2O3/Ga2O3 modulation doping using an ultra-thin (1 nm) spacer layer", 2020, Journal of Applied Physics
  • "Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition", 2020, APL Materials
  • "Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices", 2020, Journal of Applied Physics
  • "Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3", 2023, Journal of Applied Physics

Frequent coauthors with whom the scientist has collaborated include:

  • Joe F. McGlone
  • Aaron R. Arehart
  • Hongping Zhao
  • Siddharth Rajan
  • A F M Anhar Uddin Bhuiyan

Publication venues where Steven A. Ringel has regularly contributed encompass:

  • Applied Physics Letters
  • Journal of Applied Physics
  • APL Materials
  • IEEE Journal of Photovoltaics
  • arXiv (Cornell University)

In recognition of their scientific work, Steven A. Ringel was named a Fellow of the American Association for the Advancement of Science (AAAS) in 2005.

Best Publications

  • β-Gallium oxide power electronics

    Unknown

  • Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

    Z. Zhang;E. Farzana;A. R. Arehart;S. A. Ringel

  • The effects of CdCl2 on the electronic properties of molecular‐beam epitaxially grown CdTe/CdS heterojunction solar cells

    S. A. Ringel;A. W. Smith;M. H. MacDougal;A. Rohatgi

  • Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition

    A. Armstrong;A. R. Arehart;B. Moran;S. P. DenBaars

  • Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon

    A. Armstrong;A. R. Arehart;D. Green;U. K. Mishra

  • Influence of metal choice on (010) β-Ga2O3 Schottky diode properties

    Esmat Farzana;Zeng Zhang;Pran K. Paul;Aaron R. Arehart

  • Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy

    T. J. Grassman;M. R. Brenner;S. Rajagopalan;R. Unocic

  • $eta$ -Ga 2 O 3 Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz

    Zhanbo Xia;Hao Xue;Chandan Joishi;Joe Mcglone

  • Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes

    A. Hierro;D. Kwon;S. A. Ringel;M. Hansen

  • Hydrogen passivation of deep levels in n–GaN

    A. Hierro;S. A. Ringel;M. Hansen;J. S. Speck

  • Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

    M.R. Lueck;C.L. Andre;A.J. Pitera;M.L. Lee

  • Impact of dislocation densities on n+∕p and p+∕n junction GaAs diodes and solar cells on SiGe virtual substrates

    C. L. Andre;D. M. Wilt;A. J. Pitera;M. L. Lee

  • Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

    S. A. Ringel;J. A. Carlin;C. L. Andre;M. K. Hudait

  • Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics

    A. R. Arehart;B. Moran;J. S. Speck;U. K. Mishra

  • Anti-phase domain-free growth of GaAs on offcut (001) Ge wafers by molecular beam epitaxy with suppressed Ge outdiffusion

    R. M. Sieg;S. A. Ringel;S. M. Ting;E. A. Fitzgerald

  • Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

    Esmat Farzana;Max F. Chaiken;Thomas E. Blue;Aaron R. Arehart

  • Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates

    J. A. Carlin;S. A. Ringel;E. A. Fitzgerald;M. Bulsara

  • Nucleation-related defect-free GaP/Si(100) heteroepitaxy via metal-organic chemical vapor deposition

    T. J. Grassman;J. A. Carlin;B. Galiana;L.-M. Yang

  • GaAs $_{0.75}$ P $_{0.25}$ /Si Dual-Junction Solar Cells Grown by MBE and MOCVD

    Tyler J. Grassman;Daniel J. Chmielewski;Santino D. Carnevale;John A. Carlin

  • Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy

    A. R. Arehart;A. Corrion;C. Poblenz;J. S. Speck

  • Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates

    C. L. Andre;J. J. Boeckl;D. M. Wilt;A. J. Pitera

  • High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates

    R. M. Sieg;J. A. Carlin;J. J. Boeckl;S. A. Ringel

Frequent Co-Authors

Aaron R. Arehart
Aaron R. Arehart The Ohio State University
James S. Speck
James S. Speck University of California, Santa Barbara
Siddharth Rajan
Siddharth Rajan The Ohio State University
Mantu K. Hudait
Mantu K. Hudait Virginia Tech
Umesh K. Mishra
Umesh K. Mishra University of California, Santa Barbara
Steven P. DenBaars
Steven P. DenBaars University of California, Santa Barbara
Michael J. Mills
Michael J. Mills The Ohio State University
Ajeet Rohatgi
Ajeet Rohatgi Georgia Institute of Technology
Leonard J. Brillson
Leonard J. Brillson The Ohio State University

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