Daniel D. Koleske

Overview

Best Publications

• Trapping effects and microwave power performance in AlGaN/GaN HEMTs

  S.C. Binari;K. Ikossi;J.A. Roussos;W. Kruppa

  831
  Citations

• Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well.

  Marc Achermann;Melissa A. Petruska;Simon Kos;Darryl L. Smith

  697
  Citations

• Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

  Martin F. Schubert;Sameer Chhajed;Jong Kyu Kim;E. Fred Schubert

  548
  Citations

• Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers.

  Alexander H. Mueller;Melissa A. Petruska;Marc Achermann;Donald J. Werder

  499
  Citations

• Toward Smart and Ultra-Efficient Solid-State Lighting

  Jeffrey Y. Tsao;Mary H. Crawford;Michael E. Coltrin;Arthur J. Fischer

  438
  Citations

• Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

  S. R. Lee;A. M. West;A. A. Allerman;K. E. Waldrip

  373
  Citations

• Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

  P. B. Klein;S. C. Binari;K. Ikossi;A. E. Wickenden

  365
  Citations

• Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

  Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

  361
  Citations

• Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

  D.D Koleske;A.E Wickenden;R.L Henry;M.E Twigg

  345
  Citations

• Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

  Marc Achermann;Melissa A. Petruska;Daniel D. Koleske;Mary H. Crawford

  289
  Citations

• GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

  D.D. Koleske;A.E. Wickenden;R.L. Henry;J.C. Culbertson

  288
  Citations

• Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

  Qi Dai;Qifeng Shan;Jing Wang;Sameer Chhajed

  276
  Citations

• The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

  Di Zhu;Jiuru Xu;Ahmed N. Noemaun;Jong Kyu Kim

  250
  Citations

• Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

  Qiming Li;Karl R. Westlake;Mary H. Crawford;Stephen R. Lee

  237
  Citations

• Growth model for GaN with comparison to structural, optical, and electrical properties

  D. D. Koleske;A. E. Wickenden;R. L. Henry;W. J. DeSisto

  232
  Citations

• Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

  A.A. Allerman;M.H. Crawford;A.J. Fischer;K.H.A. Bogart

  218
  Citations

• The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation

  V.M Bermudez;D.D Koleske;A.E Wickenden

  188
  Citations

• ATOMIC H ABSTRACTION OF SURFACE H ON SI : AN ELEY-RIDEAL MECHANISM ?

  D. D. Koleske;S. M. Gates;B. Jackson

  181
  Citations

• In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures

  S. R. Lee;D. D. Koleske;K. C. Cross;J. A. Floro

  161
  Citations

• Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

  D. D. Koleske;A. J. Fischer;A. A. Allerman;C. C. Mitchell

  156
  Citations

• Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

  Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

  0
  Citations