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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 59 7347 7106 1820 1691 298 13140

Daniel D. Koleske publications per year

The chart shows the history of publications by Daniel D. Koleske between 1990 and 2023, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Daniel D. Koleske published across 34 years, from 1990 to 2023, averaging 8.9 papers a year. Output peaked at 23 publications in 2002. 1 of the 301 publications appeared in the last two years.

No. of publications
5 10 15 20
Bar chart. Horizontal axis: year, 1990 to 2023. Vertical axis: number of publications, 0 to 23. Peak 23 publications in 2002. 1990: 2 publications 1991: 0 publications 1992: 7 publications 1993: 9 publications 1994: 5 publications 1995: 4 publications 1996: 6 publications 1997: 6 publications 1998: 10 publications 1999: 17 publications 2000: 8 publications 2001: 14 publications 2002: 23 publications 2003: 19 publications 2004: 18 publications 2005: 14 publications 2006: 6 publications 2007: 8 publications 2008: 8 publications 2009: 15 publications 2010: 13 publications 2011: 8 publications 2012: 13 publications 2013: 13 publications 2014: 14 publications 2015: 17 publications 2016: 5 publications 2017: 12 publications 2018: 6 publications 2019: 0 publications 2020: 0 publications 2021: 0 publications 2022: 0 publications 2023: 1 publication
1990 2023

301 publications in total across all disciplines

View publications per year as a table
Daniel D. Koleske: publications per year, 1990 to 2023
Year Publications
1990 2
1991 0
1992 7
1993 9
1994 5
1995 4
1996 6
1997 6
1998 10
1999 17
2000 8
2001 14
2002 23
2003 19
2004 18
2005 14
2006 6
2007 8
2008 8
2009 15
2010 13
2011 8
2012 13
2013 13
2014 14
2015 17
2016 5
2017 12
2018 6
2019 0
2020 0
2021 0
2022 0
2023 1
Total 301
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Daniel D. Koleske publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Daniel D. Koleske sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 290–309 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 298 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593 298
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Daniel D. Koleske D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel D. Koleske sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 58–59 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610 59
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Daniel D. Koleske is affiliated with Sandia National Laboratories in the United States. Their professional work is situated within this organization, contributing to research and development efforts in various scientific domains.

There are no listed recent papers, frequent co-authors, or publication venues associated with Daniel D. Koleske in the available data. Similarly, there are no records of book publications or detailed information about main fields, subfields, or specific topics of study.

Due to the absence of detailed publication, collaboration, and research topic data, a comprehensive overview of their scientific contributions cannot be elaborated beyond their institutional affiliation.

Best Publications

  • Trapping effects and microwave power performance in AlGaN/GaN HEMTs

    S.C. Binari;K. Ikossi;J.A. Roussos;W. Kruppa

  • Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well.

    Marc Achermann;Melissa A. Petruska;Simon Kos;Darryl L. Smith

  • Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

    Martin F. Schubert;Sameer Chhajed;Jong Kyu Kim;E. Fred Schubert

  • Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers.

    Alexander H. Mueller;Melissa A. Petruska;Marc Achermann;Donald J. Werder

  • Toward Smart and Ultra-Efficient Solid-State Lighting

    Jeffrey Y. Tsao;Mary H. Crawford;Michael E. Coltrin;Arthur J. Fischer

  • Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

    S. R. Lee;A. M. West;A. A. Allerman;K. E. Waldrip

  • Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

    P. B. Klein;S. C. Binari;K. Ikossi;A. E. Wickenden

  • Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

  • Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

    D.D Koleske;A.E Wickenden;R.L Henry;M.E Twigg

  • Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

    Marc Achermann;Melissa A. Petruska;Daniel D. Koleske;Mary H. Crawford

  • GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

    D.D. Koleske;A.E. Wickenden;R.L. Henry;J.C. Culbertson

  • Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

    Qi Dai;Qifeng Shan;Jing Wang;Sameer Chhajed

  • The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

    Di Zhu;Jiuru Xu;Ahmed N. Noemaun;Jong Kyu Kim

  • Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

    Qiming Li;Karl R. Westlake;Mary H. Crawford;Stephen R. Lee

  • Growth model for GaN with comparison to structural, optical, and electrical properties

    D. D. Koleske;A. E. Wickenden;R. L. Henry;W. J. DeSisto

  • Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

    A.A. Allerman;M.H. Crawford;A.J. Fischer;K.H.A. Bogart

  • The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation

    V.M Bermudez;D.D Koleske;A.E Wickenden

  • ATOMIC H ABSTRACTION OF SURFACE H ON SI : AN ELEY-RIDEAL MECHANISM ?

    D. D. Koleske;S. M. Gates;B. Jackson

  • In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures

    S. R. Lee;D. D. Koleske;K. C. Cross;J. A. Floro

  • Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

    D. D. Koleske;A. J. Fischer;A. A. Allerman;C. C. Mitchell

  • Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

Frequent Co-Authors

Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories
George T. Wang
George T. Wang Sandia National Laboratories
Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
Steven C. Binari
Steven C. Binari United States Naval Research Laboratory
Jaehee Cho
Jaehee Cho Jeonbuk National University
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories
David M. Follstaedt
David M. Follstaedt Sandia National Laboratories
Igal Brener
Igal Brener Sandia National Laboratories
David K. Ferry
David K. Ferry Arizona State University

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