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D-Index & Metrics

Materials Science

D-Index
59
Citations
13140
World Ranking
7347
National Ranking
1820

Daniel D. Koleske publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Daniel D. Koleske sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 298 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Daniel D. Koleske D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel D. Koleske sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Daniel D. Koleske is affiliated with Sandia National Laboratories in the United States. Their professional work is situated within this organization, contributing to research and development efforts in various scientific domains.

There are no listed recent papers, frequent co-authors, or publication venues associated with Daniel D. Koleske in the available data. Similarly, there are no records of book publications or detailed information about main fields, subfields, or specific topics of study.

Due to the absence of detailed publication, collaboration, and research topic data, a comprehensive overview of their scientific contributions cannot be elaborated beyond their institutional affiliation.

Best Publications

  • Trapping effects and microwave power performance in AlGaN/GaN HEMTs

    S.C. Binari;K. Ikossi;J.A. Roussos;W. Kruppa

  • Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well.

    Marc Achermann;Melissa A. Petruska;Simon Kos;Darryl L. Smith

  • Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

    Martin F. Schubert;Sameer Chhajed;Jong Kyu Kim;E. Fred Schubert

  • Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers.

    Alexander H. Mueller;Melissa A. Petruska;Marc Achermann;Donald J. Werder

  • Toward Smart and Ultra-Efficient Solid-State Lighting

    Jeffrey Y. Tsao;Mary H. Crawford;Michael E. Coltrin;Arthur J. Fischer

  • Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

    S. R. Lee;A. M. West;A. A. Allerman;K. E. Waldrip

  • Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

    P. B. Klein;S. C. Binari;K. Ikossi;A. E. Wickenden

  • Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

  • Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN

    D.D Koleske;A.E Wickenden;R.L Henry;M.E Twigg

  • Nanocrystal-Based Light-Emitting Diodes Utilizing High-Efficiency Nonradiative Energy Transfer for Color Conversion

    Marc Achermann;Melissa A. Petruska;Daniel D. Koleske;Mary H. Crawford

  • GaN decomposition in H2 and N2 at MOVPE temperatures and pressures

    D.D. Koleske;A.E. Wickenden;R.L. Henry;J.C. Culbertson

  • Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

    Qi Dai;Qifeng Shan;Jing Wang;Sameer Chhajed

  • The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes

    Di Zhu;Jiuru Xu;Ahmed N. Noemaun;Jong Kyu Kim

  • Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays.

    Qiming Li;Karl R. Westlake;Mary H. Crawford;Stephen R. Lee

  • Growth model for GaN with comparison to structural, optical, and electrical properties

    D. D. Koleske;A. E. Wickenden;R. L. Henry;W. J. DeSisto

  • Growth and design of deep-UV (240–290 nm) light emitting diodes using AlGaN alloys

    A.A. Allerman;M.H. Crawford;A.J. Fischer;K.H.A. Bogart

  • The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation

    V.M Bermudez;D.D Koleske;A.E Wickenden

  • ATOMIC H ABSTRACTION OF SURFACE H ON SI : AN ELEY-RIDEAL MECHANISM ?

    D. D. Koleske;S. M. Gates;B. Jackson

  • In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures

    S. R. Lee;D. D. Koleske;K. C. Cross;J. A. Floro

  • Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

    D. D. Koleske;A. J. Fischer;A. A. Allerman;C. C. Mitchell

  • Internal quantum efficiency and non-radiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

    Q. Dai;M. F. Schubert;M. H. Kim;J. K. Kim

Frequent Co-Authors

Mary H. Crawford
Mary H. Crawford Sandia National Laboratories
Andrew A. Allerman
Andrew A. Allerman Sandia National Laboratories
George T. Wang
George T. Wang Sandia National Laboratories
Jonathan J. Wierer
Jonathan J. Wierer North Carolina State University
Steven C. Binari
Steven C. Binari United States Naval Research Laboratory
Jaehee Cho
Jaehee Cho Jeonbuk National University
Andrew M. Armstrong
Andrew M. Armstrong Sandia National Laboratories
David M. Follstaedt
David M. Follstaedt Sandia National Laboratories
Igal Brener
Igal Brener Sandia National Laboratories
David K. Ferry
David K. Ferry Arizona State University

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