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Engineering and Technology

D-Index
38
Citations
6522
World Ranking
7990
National Ranking
2200

Overview

Steven C. Binari is affiliated with the United States Naval Research Laboratory in the United States. The affiliation reflects a connection with a government research institution focused on scientific and technological advancements relevant to national defense and naval operations.

There is no available record of recent papers authored or co-authored by Steven C. Binari. Additionally, no specific frequent co-authors or frequent publication venues are documented, indicating either a limited publication output in commonly indexed sources or focus on internal or classified research outputs.

Data does not indicate any book publications associated with Steven C. Binari, nor are there detailed records of fields or subfields of study explicitly linked to their research activities.

Similarly, no main topics of work have been specified for Steven C. Binari in the accessible records, and there are no recorded awards associated with their professional career. The absence of these elements means the focus remains primarily on the institutional affiliation.

Best Publications

  • Trapping effects and microwave power performance in AlGaN/GaN HEMTs

    S.C. Binari;K. Ikossi;J.A. Roussos;W. Kruppa

  • Current collapse and the role of carbon in AlGaN/GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy

    P. B. Klein;S. C. Binari;K. Ikossi;A. E. Wickenden

  • Microwave performance of GaN MESFETs

    S.C. Binari;L.B. Rowland;W. Kruppa;G. Kelner

  • AlGaN/GaN HEMTs grown on SiC substrates

    S.C. Binari;J.M. Redwing;G. Kelner;W. Kruppa

  • Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors

    P. B. Klein;J. A. Freitas;S. C. Binari;A. E. Wickenden

  • Fabrication and Characterization of GaN FETs

    S.C. Binari;W. Kruppa;H.B. Dietrich;G. Kelner

  • GaN FETs for microwave and high-temperature applications

    Steven C. Binari;K. Doverspike;G. Kelner;H.B. Dietrich

  • H, He, and N implant isolation of n‐type GaN

    S. C. Binari;H. B. Dietrich;G. Kelner;L. B. Rowland

  • Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivation

    A.P. Edwards;J.A. Mittereder;S.C. Binari;D.S. Katzer

  • Electrical characterisation of Ti Schottky barriers on n-type GaN

    S.C. Binari;H.B. Dietrich;G. Kelner;L.B. Rowland

  • Persistent photoconductivity in n-type GaN

    G. Beadie;W. S. Rabinovich;A. E. Wickenden;D. D. Koleske

  • Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

    J. A. Mittereder;S. C. Binari;P. B. Klein;J. A. Roussos

  • Investigation of traps producing current collapse in AlGaN/GaN high electron mobility transistors

    P.B. Klein;S.C. Binari;K. Ikossi-Anastasiou;A.E. Wickenden

  • Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices

    J.P. Calame;R.E. Myers;S.C. Binari;F.N. Wood

  • Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors

    P. B. Klein;S. C. Binari;J. A. Freitas;A. E. Wickenden

  • Low-frequency dispersion characteristics of GaN HFETs

    W. Kruppa;S.C. Binari;K. Doverspike

  • A cat's eye multiple quantum-well modulating retro-reflector

    W.S. Rabinovich;R. Mahon;P.G. Goetz;E. Waluschka

  • Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation

    M. G. Ancona;S. C. Binari;D. J. Meyer

  • Diamond metal-semiconductor-metal ultraviolet photodetectors

    S.C. Binari;M. Marchywka;D.A. Koolbeck;H.B. Dietrich

  • AlGaN/GaN heterostructure field-effect transistor model including thermal effects

    J.D. Albrecht;P.P. Ruden;S.C. Binari;M.G. Ancona

Frequent Co-Authors

Daniel D. Koleske
Daniel D. Koleske Sandia National Laboratories
Mario G. Ancona
Mario G. Ancona United States Naval Research Laboratory
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Charles R. Eddy
Charles R. Eddy United States Naval Research Laboratory
Joshua D. Caldwell
Joshua D. Caldwell Vanderbilt University
P. Paul Ruden
P. Paul Ruden University of Minnesota
Jeffrey P. Calame
Jeffrey P. Calame United States Naval Research Laboratory
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Gregg H. Jessen
Gregg H. Jessen United States Air Force Research Laboratory
Joan M. Redwing
Joan M. Redwing Pennsylvania State University

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