P. Paul Ruden

Best Publications

• Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries

  M. Farahmand;C. Garetto;E. Bellotti;K.F. Brennan

  614
  Citations

• Electron transport characteristics of GaN for high temperature device modeling

  J. D. Albrecht;R. P. Wang;P. P. Ruden;M. Farahmand

  451
  Citations

• Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

  Ján Kolník;İsmail H. Oğuzman;Kevin F. Brennan;Rongping Wang

  435
  Citations

• High field electron transport properties of bulk ZnO

  J. D. Albrecht;P. P. Ruden;S. Limpijumnong;W. R. L. Lambrecht

  260
  Citations

• Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy

  J. M. Van Hove;R. Hickman;J. J. Klaassen;P. P. Chow

  248
  Citations

• Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility

  Paul V. Pesavento;Kanan P. Puntambekar;C. Daniel Frisbie;John C. McKeen

  230
  Citations

• Ensemble Monte Carlo study of electron transport in wurtzite InN

  Enrico Bellotti;Bhautik K. Doshi;Kevin F. Brennan;John D. Albrecht

  228
  Citations

• Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice

  G. H. Döhler;H. Künzel;D. Olego;K. Ploog

  217
  Citations

• Comparison of the Mobility–Carrier Density Relation in Polymer and Single‐Crystal Organic Transistors Employing Vacuum and Liquid Gate Dielectrics

  Yu Xia;Jeong Ho Cho;Jiyoul Lee;P. Paul Ruden

  177
  Citations

• Electronic structure of semiconductors with doping superlattices

  P P Ruden;G. H. Döhler

  176
  Citations

• Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

  Ján Kolnı́k;İsmail H. Oğuzman;Kevin F. Brennan;Rongping Wang

  151
  Citations

• Theory of spin injection into conjugated organic semiconductors

  P. P. Ruden;D. L. Smith

  139
  Citations

• High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28

  Wei Xie;Kathryn A. McGarry;Feilong Liu;Yanfei Wu

  109
  Citations

• Channel formation in organic field-effect transistors

  T. Li;J. W. Balk;P. P. Ruden;I. H. Campbell

  107
  Citations

• Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling

  T. Li;P. P. Ruden;I. H. Campbell;D. L. Smith

  105
  Citations

• Quantum efficiency of ambipolar light-emitting polymer field-effect transistors

  Jana Zaumseil;Christopher R. McNeill;Matt Bird;Darryl L. Smith

  105
  Citations

• Hole transport properties of bulk zinc‐blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

  İsmail H. Oğuzman;Ján Kolník;Kevin F. Brennan;Rongping Wang

  102
  Citations

• Carrier Localization on Surfaces of Organic Semiconductors Gated with Electrolytes

  Yu Xia;Wei Xie;P. Paul Ruden;C. Daniel Frisbie

  97
  Citations

• Electrical characterization of metal/pentacene contacts

  Lei Diao;C. Daniel Frisbie;Dominic D. Schroepfer;P. Paul Ruden

  95
  Citations

• Ensemble Monte Carlo transport simulations for semiconducting carbon nanotubes

  A. Verma;M. Z. Kauser;P. P. Ruden

  95
  Citations

• AlGaN/GaN heterostructure field-effect transistor model including thermal effects

  J.D. Albrecht;P.P. Ruden;S.C. Binari;M.G. Ancona

  90
  Citations

• Hydrostatic-pressure dependence of the photoconductivity of single-crystal pentacene and tetracene

  Zhenlin Rang;Anders Haraldsson;Dong M. Kim;P. Paul Ruden

  90
  Citations