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D-Index & Metrics

Materials Science

D-Index
59
Citations
11633
World Ranking
7423
National Ranking
203

Pierre Gibart publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Pierre Gibart sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 379 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Pierre Gibart D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Pierre Gibart sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Pierre Gibart is affiliated with the Centre national de la recherche scientifique (CNRS) in France. Their research activity is conducted under this institution, an important entity in French scientific research.

Details about Pierre Gibart's recent scholarly publications, co-authors, main fields of study, subfields, and main topics of work are not provided in the available data. Consequently, there is no specific information about their research areas or scientific contributions in terms of papers or collaborative networks.

Likewise, there is no information regarding frequent publication venues or any book publications associated with Pierre Gibart, which limits insight into the dissemination channels typically utilized for their research outputs.

No awards or honors have been reported for Pierre Gibart in the data provided. Additionally, they are listed as living, so all descriptions of their work are in the present tense.

Best Publications

  • TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

    M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

  • III nitrides and UV detection

    E Muñoz;E Monroy;J L Pau;F Calle

  • Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

    Eric Feltin;B. Beaumont;M. Laügt;P. de Mierry

  • Epitaxial Lateral Overgrowth of GaN

    B. Beaumont;Ph. Vennéguès;P. Gibart

  • Metal organic vapour phase epitaxy of GaN and lateral overgrowth

    Unknown

  • High-performance GaN p-n junction photodetectors for solar ultraviolet applications

    E Monroy;E Muñoz;F J Sánchez;F Calle

  • Yellow luminescence and related deep states in undoped GaN

    E. Calleja;F. J. Sánchez;D. Basak;M. A. Sánchez-García

  • Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

    P. Vennéguès;B. Beaumont;V. Bousquet;M. Vaille

  • Below Band-Gap IR Response of Substrate-Free GaAs Solar Cells Using Two-Photon Up-Conversion

    Pierre Gibart;François Auzel;Jean-Claude Guillaume;Khaled Zahraman

  • AlGaN-based UV photodetectors

    E. Monroy;F. Calle;J.L. Pau;E. Muñoz

  • Direct observation of the core structures of threading dislocations in GaN

    Y. Xin;S. J. Pennycook;N. D. Browning;P. D. Nellist

  • PHOTOCONDUCTOR GAIN MECHANISMS IN GAN ULTRAVIOLET DETECTORS

    E. Muñoz;E. Monroy;J. A. Garrido;I. Izpura

  • Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

    H Lahrèche;P Vennéguès;O Tottereau;M Laügt

  • Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

    P Vennéguès;B Beaumont;S Haffouz;M Vaille

  • Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE from 3D islands and lateral overgrowth

    H Lahrèche;P Vennéguès;B Beaumont;P Gibart

  • Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

    B. Beaumont;S. Haffouz;P. Gibart

  • Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

    P. Vennéguès;M. Benaissa;B. Beaumont;E. Feltin

  • Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

    E. Monroy;F. Calle;J. L. Pau;F. J. Sánchez

  • Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation

    F. D. Auret;S. A. Goodman;F. K. Koschnick;J.-M. Spaeth

  • Proton bombardment-induced electron traps in epitaxially grown n-GaN

    F. D. Auret;S. A. Goodman;F. K. Koschnick;J.-M. Spaeth

  • Nature and elimination of yellow-band luminescence and donor–acceptor emission of undoped GaN

    G. Li;S. J. Chua;S. J. Xu;W. Wang

Frequent Co-Authors

Bernard Beaumont
Bernard Beaumont Centre national de la recherche scientifique, CNRS
Mathieu Leroux
Mathieu Leroux Centre national de la recherche scientifique, CNRS
Eva Monroy
Eva Monroy Grenoble Alpes University
Fernando Calle
Fernando Calle Technical University of Madrid
Jean Massies
Jean Massies Centre national de la recherche scientifique, CNRS
Nicolas Grandjean
Nicolas Grandjean École Polytechnique Fédérale de Lausanne
Bo Monemar
Bo Monemar Linköping University
Nigel D. Browning
Nigel D. Browning University of Liverpool
Robert A. Taylor
Robert A. Taylor University of New South Wales
Jose A. Garrido
Jose A. Garrido Institut Català de Nanociència i Nanotecnologia

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