His primary areas of study are Epitaxy, Optoelectronics, Sapphire, Dislocation and Wide-bandgap semiconductor. Epitaxy is a subfield of Layer that Bernard Beaumont investigates. The concepts of his Optoelectronics study are interwoven with issues in Gallium nitride and Optics.
His Sapphire research is multidisciplinary, incorporating elements of Metalorganic vapour phase epitaxy, Electron mobility, Molecular beam epitaxy, Crystallographic defect and Burgers vector. Bernard Beaumont works mostly in the field of Dislocation, limiting it down to topics relating to Photoluminescence and, in certain cases, Luminescence and Exciton, as a part of the same area of interest. In Wide-bandgap semiconductor, he works on issues like Core, which are connected to Condensed matter physics, Partial dislocations, Dislocation creep and Band gap.
His primary scientific interests are in Optoelectronics, Epitaxy, Metalorganic vapour phase epitaxy, Sapphire and Photoluminescence. His Optoelectronics study combines topics in areas such as Gallium nitride and Optics. His research in Epitaxy intersects with topics in Crystallography, Dislocation and Transmission electron microscopy.
His studies in Metalorganic vapour phase epitaxy integrate themes in fields like Molecular beam epitaxy, Metal, Crystallographic defect and Analytical chemistry. His Sapphire research is multidisciplinary, relying on both Burgers vector and Microstructure. He combines subjects such as Full width at half maximum, Luminescence, Exciton, Molecular physics and Band gap with his study of Photoluminescence.
His primary areas of investigation include Epitaxy, Optoelectronics, Metalorganic vapour phase epitaxy, Analytical chemistry and Photoluminescence. Bernard Beaumont has researched Epitaxy in several fields, including Crystallography, Transmission electron microscopy and Annealing. His Wafer study in the realm of Optoelectronics connects with subjects such as Quality.
His research integrates issues of Gallium nitride, Hydride, Metal, Diode and Crystallographic defect in his study of Metalorganic vapour phase epitaxy. The various areas that he examines in his Photoluminescence study include Exciton, Heterojunction and Carrier lifetime. His biological study spans a wide range of topics, including Cathodoluminescence and Sapphire.
Bernard Beaumont mainly investigates Optoelectronics, Epitaxy, Photoluminescence, Dislocation and Nanotechnology. His Optoelectronics study integrates concerns from other disciplines, such as Sapphire and Metalorganic vapour phase epitaxy. His work carried out in the field of Sapphire brings together such families of science as Transmission electron microscopy, Exciton and Vacancy defect.
His Metalorganic vapour phase epitaxy research incorporates themes from Non-radiative recombination, Silicon and Analytical chemistry. The Epitaxy study combines topics in areas such as Deep-level transient spectroscopy, Depletion region, Activation energy and Diode, Schottky barrier. His work on Lateral overgrowth, Threading dislocations and Nitride as part of general Nanotechnology study is frequently connected to Two step and Galium, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them.
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TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN
M. Leroux;N. Grandjean;B. Beaumont;G. Nataf.
Journal of Applied Physics (1999)
Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
Eric Feltin;B. Beaumont;M. Laügt;P. de Mierry.
Applied Physics Letters (2001)
Epitaxial Lateral Overgrowth of GaN
B. Beaumont;Ph. Vennéguès;P. Gibart.
Physica Status Solidi B-basic Solid State Physics (2001)
High-performance GaN p-n junction photodetectors for solar ultraviolet applications
E Monroy;E Muñoz;F J Sánchez;F Calle.
Semiconductor Science and Technology (1998)
Yellow luminescence and related deep states in undoped GaN
E. Calleja;F. J. Sánchez;D. Basak;M. A. Sánchez-García.
Physical Review B (1997)
Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods
P. Vennéguès;B. Beaumont;V. Bousquet;M. Vaille.
Journal of Applied Physics (2000)
Direct observation of the core structures of threading dislocations in GaN
Y. Xin;S. J. Pennycook;N. D. Browning;P. D. Nellist.
Applied Physics Letters (1998)
PHOTOCONDUCTOR GAIN MECHANISMS IN GAN ULTRAVIOLET DETECTORS
E. Muñoz;E. Monroy;J. A. Garrido;I. Izpura.
Applied Physics Letters (1997)
AlGaN-based UV photodetectors
E. Monroy;F. Calle;J.L. Pau;E. Muñoz.
Journal of Crystal Growth (2001)
Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE
P Vennéguès;B Beaumont;S Haffouz;M Vaille.
Journal of Crystal Growth (1998)
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