Bernard Beaumont

Overview

Best Publications

• TEMPERATURE QUENCHING OF PHOTOLUMINESCENCE INTENSITIES IN UNDOPED AND DOPED GAN

  M. Leroux;N. Grandjean;B. Beaumont;G. Nataf

  639
  Citations

• Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

  Eric Feltin;B. Beaumont;M. Laügt;P. de Mierry

  374
  Citations

• Epitaxial Lateral Overgrowth of GaN

  B. Beaumont;Ph. Vennéguès;P. Gibart

  333
  Citations

• High-performance GaN p-n junction photodetectors for solar ultraviolet applications

  E Monroy;E Muñoz;F J Sánchez;F Calle

  299
  Citations

• Yellow luminescence and related deep states in undoped GaN

  E. Calleja;F. J. Sánchez;D. Basak;M. A. Sánchez-García

  263
  Citations

• Reduction mechanisms for defect densities in GaN using one- or two-step epitaxial lateral overgrowth methods

  P. Vennéguès;B. Beaumont;V. Bousquet;M. Vaille

  244
  Citations

• AlGaN-based UV photodetectors

  E. Monroy;F. Calle;J.L. Pau;E. Muñoz

  226
  Citations

• Direct observation of the core structures of threading dislocations in GaN

  Y. Xin;S. J. Pennycook;N. D. Browning;P. D. Nellist

  223
  Citations

• PHOTOCONDUCTOR GAIN MECHANISMS IN GAN ULTRAVIOLET DETECTORS

  E. Muñoz;E. Monroy;J. A. Garrido;I. Izpura

  209
  Citations

• Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si(111)

  H Lahrèche;P Vennéguès;O Tottereau;M Laügt

  179
  Citations

• Influence of in situ sapphire surface preparation and carrier gas on the growth mode of GaN in MOVPE

  P Vennéguès;B Beaumont;S Haffouz;M Vaille

  177
  Citations

• Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE from 3D islands and lateral overgrowth

  H Lahrèche;P Vennéguès;B Beaumont;P Gibart

  173
  Citations

• Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy

  B. Beaumont;S. Haffouz;P. Gibart

  153
  Citations

• Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN

  P. Vennéguès;M. Benaissa;B. Beaumont;E. Feltin

  151
  Citations

• Analysis and modeling of AlxGa1−xN-based Schottky barrier photodiodes

  E. Monroy;F. Calle;J. L. Pau;F. J. Sánchez

  143
  Citations

• Electrical characterization of two deep electron traps introduced in epitaxially grown n-GaN during He-ion irradiation

  F. D. Auret;S. A. Goodman;F. K. Koschnick;J.-M. Spaeth

  139
  Citations

• Proton bombardment-induced electron traps in epitaxially grown n-GaN

  F. D. Auret;S. A. Goodman;F. K. Koschnick;J.-M. Spaeth

  139
  Citations

• Nature and elimination of yellow-band luminescence and donor–acceptor emission of undoped GaN

  G. Li;S. J. Chua;S. J. Xu;W. Wang

  137
  Citations

• Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire

  M Leroux;B Beaumont;N Grandjean;P Lorenzini

  130
  Citations

• METALORGANIC VAPOR-PHASE EPITAXY-GROWN ALGAN MATERIALS FOR VISIBLE-BLIND ULTRAVIOLET PHOTODETECTOR APPLICATIONS

  F. Omnès;N. Marenco;B. Beaumont;Ph. de Mierry

  122
  Citations