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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 60 7162 6925 419 406 341 11174

Armin Dadgar publications per year

The chart shows the history of publications by Armin Dadgar between 1989 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Armin Dadgar published across 37 years, from 1989 to 2025, averaging 10.2 papers a year. Output peaked at 29 publications in 2003. 13 of the 376 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1989 to 2025. Vertical axis: number of publications, 0 to 29. Peak 29 publications in 2003. 1989: 1 publication 1990: 0 publications 1991: 0 publications 1992: 0 publications 1993: 2 publications 1994: 1 publication 1995: 3 publications 1996: 2 publications 1997: 4 publications 1998: 8 publications 1999: 4 publications 2000: 5 publications 2001: 14 publications 2002: 25 publications 2003: 29 publications 2004: 29 publications 2005: 17 publications 2006: 21 publications 2007: 24 publications 2008: 13 publications 2009: 19 publications 2010: 18 publications 2011: 20 publications 2012: 12 publications 2013: 14 publications 2014: 5 publications 2015: 10 publications 2016: 16 publications 2017: 10 publications 2018: 13 publications 2019: 5 publications 2020: 5 publications 2021: 8 publications 2022: 3 publications 2023: 3 publications 2024: 9 publications 2025: 4 publications
1989 2025

376 publications in total across all disciplines

View publications per year as a table
Armin Dadgar: publications per year, 1989 to 2025
Year Publications
1989 1
1990 0
1991 0
1992 0
1993 2
1994 1
1995 3
1996 2
1997 4
1998 8
1999 4
2000 5
2001 14
2002 25
2003 29
2004 29
2005 17
2006 21
2007 24
2008 13
2009 19
2010 18
2011 20
2012 12
2013 14
2014 5
2015 10
2016 16
2017 10
2018 13
2019 5
2020 5
2021 8
2022 3
2023 3
2024 9
2025 4
Total 376
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Armin Dadgar publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Armin Dadgar sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 330–349 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 341 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477 341
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Armin Dadgar D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Armin Dadgar sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 60–61 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 60 D-Index — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587 60
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Armin Dadgar is affiliated with Otto-von-Guericke University Magdeburg in Germany. Their research primarily spans several interrelated fields including engineering, physics and astronomy, and materials science.

The main areas of study in Dadgar's work cover the following subfields:

  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Mechanics of Materials
  • Biomedical Engineering

Key research topics explored by Dadgar include:

  • GaN-based semiconductor devices and materials
  • Acoustic Wave Resonator Technologies
  • Metal and Thin Film Mechanics
  • Advanced MEMS and NEMS Technologies
  • Semiconductor Quantum Structures and Devices
  • Semiconductor materials and devices
  • Mechanical and Optical Resonators

The scientist has contributed to several recent publications, among which notable papers include:

  • "Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies" (2020), IEEE Access
  • "Sputter Epitaxy of AlN and GaN on Si(111)" (2022), physica status solidi (a)
  • "Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy" (2021), Journal of Crystal Growth
  • "Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si" (2023), Journal of Applied Physics
  • "Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer" (2020), IEEE Transactions on Electron Devices

Dadgar's work has appeared frequently in respected publication venues such as:

  • Journal of Applied Physics
  • Applied Physics Letters
  • arXiv (Cornell University)
  • Journal of Physics D Applied Physics
  • Japanese Journal of Applied Physics

The scientist frequently collaborates with several coauthors, including:

  • A. Strittmatter
  • J. Bläsing
  • Florian Hörich
  • Gordon Schmidt
  • J. Christen

Best Publications

  • Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

    Armin Dadgar;Jürgen Bläsing;Annette Diez;Assadullah Alam

  • GaN-based optoelectronics on silicon substrates

    Alois Krost;Armin Dadgar

  • Gallium nitride vertical power devices on foreign substrates: a review and outlook

    Yuhao Zhang;Armin Dadgar;Tomás Palacios

  • Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

    A. Dadgar;M. Poschenrieder;J. Bläsing;K. Fehse

  • Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications.

    Hong Jin Fan;Woo Lee;Robert Hauschild;Marin Alexe

  • High Si and Ge n-type doping of GaN doping - Limits and impact on stress

    S. Fritze;A. Dadgar;H. Witte;M. Bügler

  • GaN-Based Devices on Si

    A. Krost;A. Dadgar

  • MOVPE growth of GaN on Si(1 1 1) substrates

    Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

  • Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach

    Hong Jin Fan;Woo Lee;Roland Scholz;Armin Dadgar

  • Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

    Martin Feneberg;Sarah Osterburg;Karsten Lange;Christian Lidig

  • GaN‐based epitaxy on silicon: stress measurements

    A. Krost;A. Dadgar;G. Strassburger;R. Clos

  • High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

    A. Dadgar;F. Schulze;J. Bläsing;A. Diez

  • Atomic arrangement at the AlN/Si (111) interface

    R. Liu;Fernando Ponce;A. Dadgar;A. Krost

  • Recording of cell action potentials with AlGaN∕GaN field-effect transistors

    Georg Steinhoff;Barbara Baur;Günter Wrobel;Sven Ingebrandt

  • Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

    A Dadgar;F Schulze;M Wienecke;A Gadanecz

  • The origin of stress reduction by low-temperature AlN interlayers

    J. Bläsing;A. Reiher;A. Dadgar;A. Diez

  • Growth of blue GaN LED structures on 150-mm Si(1 1 1)

    A. Dadgar;C. Hums;A. Diez;J. Bläsing

  • Reduction of stress at the initial stages of GaN growth on Si(111)

    A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

  • Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

    A. Reiher;J. Bläsing;A. Dadgar;A. Diez

  • Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

    C. Hums;J. Bläsing;A. Dadgar;A. Diez

Frequent Co-Authors

Alois Krost
Alois Krost Otto-von-Guericke University Magdeburg
Jürgen Bläsing
Jürgen Bläsing Otto-von-Guericke University Magdeburg
Jürgen Christen
Jürgen Christen Otto-von-Guericke University Magdeburg
Dieter Bimberg
Dieter Bimberg Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP)
Herbert Schumann
Herbert Schumann Technical University of Berlin
Axel Hoffmann
Axel Hoffmann University of Illinois at Urbana-Champaign
Fernando Ponce
Fernando Ponce Arizona State University
Erhard Kohn
Erhard Kohn North Carolina State University
Margit Zacharias
Margit Zacharias University of Freiburg
Hong Jin Fan
Hong Jin Fan Nanyang Technological University

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