2026 Armin Dadgar: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	60	7164	6928	420	407	341	11174

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

7164

6928

420

407

341

11174

Overview

Armin Dadgar is affiliated with Otto-von-Guericke University Magdeburg in Germany. Their research primarily spans several interrelated fields including engineering, physics and astronomy, and materials science.

The main areas of study in Dadgar's work cover the following subfields:

Condensed Matter Physics
Electrical and Electronic Engineering
Atomic and Molecular Physics, and Optics
Mechanics of Materials
Biomedical Engineering

Key research topics explored by Dadgar include:

GaN-based semiconductor devices and materials
Acoustic Wave Resonator Technologies
Metal and Thin Film Mechanics
Advanced MEMS and NEMS Technologies
Semiconductor Quantum Structures and Devices
Semiconductor materials and devices
Mechanical and Optical Resonators

The scientist has contributed to several recent publications, among which notable papers include:

"Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies" (2020), IEEE Access
"Sputter Epitaxy of AlN and GaN on Si(111)" (2022), physica status solidi (a)
"Demonstration of lateral epitaxial growth of AlN on Si (1 1 1) at low temperatures by pulsed reactive sputter epitaxy" (2021), Journal of Crystal Growth
"Structural properties and epitaxial relation of cubic rock salt ScxAl1−xN/ScN/Si" (2023), Journal of Applied Physics
"Understanding High-Energy 75-MeV Sulfur-Ion Irradiation-Induced Degradation in GaN-Based Heterostructures: The Role of the GaN Channel Layer" (2020), IEEE Transactions on Electron Devices

Dadgar's work has appeared frequently in respected publication venues such as:

Journal of Applied Physics
Applied Physics Letters
arXiv (Cornell University)
Journal of Physics D Applied Physics
Japanese Journal of Applied Physics

The scientist frequently collaborates with several coauthors, including:

A. Strittmatter
J. Bläsing
Florian Hörich
Gordon Schmidt
J. Christen

Best Publications

Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si (111) Exceeding 1 µm in Thickness

Armin Dadgar;Jürgen Bläsing;Annette Diez;Assadullah Alam

451
Citations
GaN-based optoelectronics on silicon substrates

Alois Krost;Armin Dadgar

435
Citations
Gallium nitride vertical power devices on foreign substrates: a review and outlook

Yuhao Zhang;Armin Dadgar;Tomás Palacios

285
Citations
Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers and in situ SixNy masking

A. Dadgar;M. Poschenrieder;J. Bläsing;K. Fehse

262
Citations
Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications.

Hong Jin Fan;Woo Lee;Robert Hauschild;Marin Alexe

259
Citations
High Si and Ge n-type doping of GaN doping - Limits and impact on stress

S. Fritze;A. Dadgar;H. Witte;M. Bügler

240
Citations
GaN-Based Devices on Si

A. Krost;A. Dadgar

238
Citations
MOVPE growth of GaN on Si(1 1 1) substrates

Armin Dadgar;M. Poschenrieder;J. Bläsing;O. Contreras

219
Citations
Arrays of vertically aligned and hexagonally arranged ZnO nanowires: a new template-directed approach

Hong Jin Fan;Woo Lee;Roland Scholz;Armin Dadgar

200
Citations
Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

Martin Feneberg;Sarah Osterburg;Karsten Lange;Christian Lidig

198
Citations
GaN‐based epitaxy on silicon: stress measurements

A. Krost;A. Dadgar;G. Strassburger;R. Clos

197
Citations
High-sheet-charge–carrier-density AlInN∕GaN field-effect transistors on Si(111)

A. Dadgar;F. Schulze;J. Bläsing;A. Diez

192
Citations
Atomic arrangement at the AlN/Si (111) interface

R. Liu;Fernando Ponce;A. Dadgar;A. Krost

183
Citations
Recording of cell action potentials with AlGaN∕GaN field-effect transistors

Georg Steinhoff;Barbara Baur;Günter Wrobel;Sven Ingebrandt

180
Citations
Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction

A Dadgar;F Schulze;M Wienecke;A Gadanecz

179
Citations
The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing;A. Reiher;A. Dadgar;A. Diez

177
Citations
Growth of blue GaN LED structures on 150-mm Si(1 1 1)

A. Dadgar;C. Hums;A. Diez;J. Bläsing

166
Citations
Reduction of stress at the initial stages of GaN growth on Si(111)

A. Dadgar;M. Poschenrieder;A. Reiher;J. Bläsing

161
Citations
Efficient stress relief in GaN heteroepitaxy on Si(1 1 1) using low-temperature AlN interlayers

A. Reiher;J. Bläsing;A. Dadgar;A. Diez

156
Citations
Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range

C. Hums;J. Bläsing;A. Dadgar;A. Diez

151
Citations