The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Axel Hoffmann sits on this spectrum.
This scientist: 833 publications — 97th percentile
97% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,163 publications or more.
The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Axel Hoffmann sits on this spectrum.
This scientist: 93 D-Index — 89th percentile
89% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 165 D-Index or more.
Axel Hoffmann is affiliated with the Technical University of Berlin in Germany. Their research spans primarily across the fields of Materials Science, Physics and Astronomy, and Engineering. Within these broad fields, Hoffmann has contributed extensively to several subfields including Materials Chemistry, Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, as well as Electronic, Optical and Magnetic Materials.
The research topics that Hoffman has focused on include GaN-based semiconductor devices and materials, ZnO doping and properties, Ga2O3 and related materials, and Perovskite Materials and Applications. Additionally, their work covers Semiconductor Quantum Structures and Devices, Optical properties and cooling technologies in crystalline materials, and general semiconductor materials and devices.
Hoffmann's publication record includes papers in various scientific journals. Notable recent papers include:
Hoffmann frequently publishes in several venues, including:
Collaborations are an important aspect of Hoffmann's research output. Frequent coauthors include Markus R. Wagner, Christian Frankerl, Felix Nippert, Christian Brandl, and Hans-Jürgen Lugauer. These collaborations have contributed to multiple joint publications.
B. K. Meyer;H. Alves;D. M. Hofmann;W. Kriegseis
Wanjun Jiang;Wanjun Jiang;Xichao Zhang;Guoqiang Yu;Wei Zhang;Wei Zhang
Axel Hoffmann
Wanjun Jiang;Pramey Upadhyaya;Wei Zhang;Guoqiang Yu
Frances Hellman;Axel Hoffmann;Yaroslav Tserkovnyak;Geoffrey S.D. Beach
O. Mosendz;J.E. Pearson;F.Y. Fradin;G.E.W. Bauer
Saptarshi Das;Wei Zhang;Marcel Demarteau;Axel Hoffmann
R. Heitz;M. Veit;N. N. Ledentsov;A. Hoffmann
O. Mosendz;V. Vlaminck;J. E. Pearson;F. Y. Fradin
C. F. Klingshirn;B. K. Meyer;Andreas Waag;Axel Hoffmann
A. Kaschner;U. Haboeck;Martin Strassburg;Matthias Strassburg
Wei Zhang;Matthias B. Jungfleisch;Wanjun Jiang;John E. Pearson
J. Železný;J. Železný;P. Wadley;K. Olejník;A. Hoffmann
Yi Li;Wei Zhang;Wei Zhang;Vasyl Tyberkevych;Wai Kwong Kwok
K. Vogt;F.Y. Fradin;J.E. Pearson;T. Sebastian;T. Sebastian
Axel Friedrich Hoffmann;Sam D. Bader
Qiming Shao;Peng Li;Luqiao Liu;Hyunsoo Yang
Claus F. Klingshirn;Bruno K. Meyer;Andreas Waag;Axel Hoffmann
H. Zhou;H. Alves;D. M. Hofmann;W. Kriegseis
H. Siegle;G. Kaczmarczyk;L. Filippidis;A. P. Litvinchuk
Wanjun Jiang;Gong Chen;Kai Liu;Jiadong Zang
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