World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
61
Citations
12719
World Ranking
6818
National Ranking
2018

Xiufeng Han publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Xiufeng Han sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 448 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Xiufeng Han D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Xiufeng Han sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Xiufeng Han is affiliated with the Chinese Academy of Sciences in China and has a substantial body of work in the fields of Physics and Astronomy, Materials Science, and Engineering. Their research primarily focuses on the magnetic properties of thin films, physics of superconductivity and magnetism, and quantum and electron transport phenomena.

Their main subfields of study include Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, and Materials Chemistry. These areas correspond closely with their main research topics, which also cover multiferroics and related materials, magneto-optical properties and applications, magnetic and transport properties of perovskites and related materials, as well as advanced memory and neural computing.

Xiufeng Han frequently publishes in several scientific venues, with notable contributions in:

  • Applied Physics Letters
  • Physical Review B
  • arXiv (Cornell University)
  • Physical Review Applied
  • Nature Communications

Recent papers from their work include:

  • "Spin-orbit torques: Materials, physics, and devices" (2021) in Applied Physics Letters
  • "High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2" (2020) in Advanced Materials
  • "Efficient Spin-to-Charge Conversion via Altermagnetic Spin Splitting Effect in Antiferromagnet RuO2" (2023) in Physical Review Letters
  • "Magnetic memory driven by topological insulators" (2021) in Nature Communications
  • "Chiral Spin-Wave Velocities Induced by All-Garnet Interfacial Dzyaloshinskii-Moriya Interaction in Ultrathin Yttrium Iron Garnet Films" (2020) in Physical Review Letters

Frequent coauthors collaborating with Xiufeng Han include:

  • Caihua Wan (93 coauthored publications)
  • Guoqiang Yu (81 coauthored publications)
  • Haiming Yu (30 coauthored publications)
  • Chenyang Guo (29 coauthored publications)
  • Hanchen Wang (29 coauthored publications)

Best Publications

  • Current-driven magnetization switching in a van der Waals ferromagnet Fe3GeTe2

    Xiao Wang;Jian Tang;Xiuxin Xia;Xiuxin Xia;Congli He

  • Room-Temperature Skyrmion Shift Device for Memory Application

    Guoqiang Yu;Pramey Upadhyaya;Qiming Shao;Hao Wu

  • Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure.

    Yingying Wu;Senfu Zhang;Junwei Zhang;Wei Wang

  • Giant electrical modulation of magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) heterostructure.

    Sen Zhang;Yonggang Zhao;Xia Xiao;Yizheng Wu

  • Room temperature ferromagnetism in ultra-thin van der Waals crystals of 1T-CrTe 2

    Xingdan Sun;Xingdan Sun;Wanying Li;Wanying Li;Xiao Wang;Qi Sui

  • Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature.

    Peisen Li;Aitian Chen;Dalai Li;Yonggang Zhao

  • Room-Temperature Spin-Orbit Torque from Topological Surface States.

    Hao Wu;Peng Zhang;Peng Deng;Qianqian Lan

  • Spin-orbit torques: Materials, physics, and devices

    Xiufeng Han;Xiao Wang;Caihua Wan;Guoqiang Yu

  • Magnetoelectric coupling in the paramagnetic state of a metal-organic framework

    W. Wang;L. Q. Yan;J. Z. Cong;Y. L. Zhao

  • High Spin Hall Conductivity in Large-Area Type-II Dirac Semimetal PtTe2

    Hongjun Xu;Jinwu Wei;Hengan Zhou;Jiafeng Feng

  • Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes

    Xiu Feng Han;Mikihiko Oogane;Hitoshi Kubota;Yasuo Ando

  • Magnon Valve Effect between Two Magnetic Insulators.

    H. Wu;L. Huang;C. Fang;B. S. Yang

  • Structural and Magnetic Properties of Various Ferromagnetic Nanotubes

    Xiu Feng Han;Shahzadi Shamaila;Rehana Sharif;Jun Yang Chen

  • Spin-orbit torque switching in a T-type magnetic configuration with current orthogonal to easy axes.

    W. J. Kong;C. H. Wan;X. Wang;B. S. Tao

  • Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

    Aitian Chen;Aitian Chen;Yan Wen;Bin Fang;Yuelei Zhao

  • The perpendicular anisotropy of Co40Fe40B20 sandwiched between Ta and MgO layers and its application in CoFeB/MgO/CoFeB tunnel junction

    W. X. Wang;Y. Yang;H. Naganuma;Y. Ando

  • A Van der Waals Interface Hosting Two Groups of Magnetic Skyrmions

    Unknown

  • Room-Temperature Skyrmions in an Antiferromagnet-Based Heterostructure

    Guoqiang Yu;Alec Jenkins;Xin Ma;Seyed Armin Razavi

  • Giant barocaloric effect in hexagonal Ni2In-type Mn-Co-Ge-In compounds around room temperature.

    Rong-Rong Wu;Rong-Rong Wu;Li-Fu Bao;Feng-Xia Hu;Hui Wu;Hui Wu

  • Ferroelastic switching in a layered-perovskite thin film.

    Chuanshou Wang;Xiaoxing Ke;Xiaoxing Ke;Jianjun Wang;Renrong Liang

  • Field-Free Programmable Spin Logics via Chirality-Reversible Spin-Orbit Torque Switching.

    Xiao Wang;Caihua Wan;Wenjie Kong;Xuan Zhang

  • Strain-induced modulation of perpendicular magnetic anisotropy in Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

    Guoqiang Yu;Zhenxing Wang;Zhenxing Wang;Maryam Abolfath-Beygi;Congli He

Frequent Co-Authors

Kang L. Wang
Kang L. Wang University of California, Los Angeles
J. M. D. Coey
J. M. D. Coey Trinity College Dublin
Yasuo Ando
Yasuo Ando Tohoku University
Xixiang Zhang
Xixiang Zhang King Abdullah University of Science and Technology
Dapeng Yu
Dapeng Yu Peking University
Jianli Wang
Jianli Wang University of Wollongong
Terunobu Miyazaki
Terunobu Miyazaki Tohoku University
Michel Hehn
Michel Hehn University of Lorraine
Saira Riaz
Saira Riaz University of the Punjab
Xavier Marie
Xavier Marie Federal University of Toulouse Midi-Pyrénées

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