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D-Index & Metrics

Materials Science

D-Index
64
Citations
14609
World Ranking
5899
National Ranking
1780

Overview

Cheng Song is affiliated with Tsinghua University in China and has made extensive contributions to the fields of Materials Science, Physics and Astronomy, and Engineering. Their work spans several subfields, including Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, and Condensed Matter Physics.

The scientist's research topics cover Magnetic properties of thin films, Multiferroics and related materials, Acoustic Wave Resonator Technologies, Physics of Superconductivity and Magnetism, Ferroelectric and Piezoelectric Materials, Magnetic and transport properties of perovskites and related materials, and Advanced Memory and Neural Computing.

Among recent publications, the following are noted:

  1. Observation of Spin Splitting Torque in a Collinear Antiferromagnet RuO2, 2022, Physical Review Letters
  2. Spin-orbit torques: Materials, mechanisms, performances, and potential applications, 2020, Progress in Materials Science
  3. Observation of the antiferromagnetic spin Hall effect, 2021, Nature Materials
  4. Efficient Spin-to-Charge Conversion via Altermagnetic Spin Splitting Effect in Antiferromagnet RuO2, 2023, Physical Review Letters
  5. Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics, 2020, Advanced Materials

Frequent collaborators include Feng Pan, Hua Bai, Lei Han, Yongjian Zhou, and Sulei Fu.

The scientist has published frequently in venues such as arXiv (Cornell University), Nature Communications, Applied Physics Letters, Physical Review B, and Advanced Functional Materials.

Best Publications

  • Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

    F. Pan;S. Gao;C. Chen;C. Song

  • Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films

    F. Pan;C. Song;X.J. Liu;Y.C. Yang

  • Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

    Cheng Song;Bin Cui;Fan Li;Xiangjun Zhou

  • Observation of spin splitting torque in a collinear antiferromagnet RuO2

    Hua Bai;Lei Han;Xiaoyu Feng;Yongjian Zhou

  • Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators.

    X. Z. Chen;R. Zarzuela;J. Zhang;C. Song

  • Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped ZnO

    C. Song;K. W. Geng;F. Zeng;X. B. Wang

  • Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system

    Sizhao Li;Fei Zeng;Chao Chen;Hongyan Liu

  • Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO

    Guang Chen;Cheng Song;Chao Chen;Shuang Gao

  • Spin-orbit torques: Materials, mechanisms, performances, and potential applications

    Cheng Song;Ruiqi Zhang;Liyang Liao;Yongjian Zhou

  • Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

    Shuang Gao;Cheng Song;Chao Chen;Fei Zeng

  • Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

    X.B. Wang;C. Song;K.W. Geng;F. Zeng

  • Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in an antiferromagnet-based tunnel junction.

    Y. Y. Wang;C. Song;B. Cui;G. Y. Wang

  • Observation of the antiferromagnetic spin Hall effect

    Xianzhe Chen;Shuyuan Shi;Guoyi Shi;Xiaolong Fan

  • Electric field control of Néel spin-orbit torque in an antiferromagnet.

    Xianzhe Chen;Xiaofeng Zhou;Ran Cheng;Cheng Song

  • Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

    Yiming Sun;Meiqian Tai;Cheng Song;Ziyu Wang

  • Guiding the Growth of a Conductive Filament by Nanoindentation To Improve Resistive Switching.

    Yiming Sun;Cheng Song;Jun Yin;Xianzhe Chen

  • Forming-free and self-rectifying resistive switching of the simple Pt/TaOx/n-Si structure for access device-free high-density memory application

    Shuang Gao;Fei Zeng;Fan Li;Minjuan Wang

  • Luminescence and Raman scattering properties of Ag-doped ZnO films

    X B Wang;C Song;K W Geng;F Zeng

  • How to manipulate magnetic states of antiferromagnets

    Cheng Song;Yunfeng You;Xianzhe Chen;Xiaofeng Zhou

  • Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics.

    Jiacheng Sun;Yuyan Wang;Shaoqiang Guo;Bensong Wan

  • The influence of different doping elements on microstructure, piezoelectric coefficient and resistivity of sputtered ZnO film

    X.B. Wang;C. Song;D.M. Li;K.W. Geng

  • Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch

    Shuang Gao;Fei Zeng;Minjuan Wang;Guangyue Wang

Frequent Co-Authors

Feng Pan
Feng Pan Tsinghua University
Fei Zeng
Fei Zeng Tsinghua University
Huaqiang Wu
Huaqiang Wu Tsinghua University
Zhidong Zhang
Zhidong Zhang Chinese Academy of Sciences
Xiufeng Han
Xiufeng Han Chinese Academy of Sciences
Hui Wu
Hui Wu National Institute of Standards and Technology
Lin Gu
Lin Gu Chinese Academy of Sciences
Yuchao Yang
Yuchao Yang Peking University
Jing Zhu
Jing Zhu Tsinghua University
Jirong Sun
Jirong Sun Chinese Academy of Sciences

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