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Materials Science

D-Index
51
Citations
9338
World Ranking
9913
National Ranking
441

Overview

Jang-Sik Lee is affiliated with Pohang University of Science and Technology in South Korea and has contributed extensively to the field of engineering, with a particular focus on electrical and electronic engineering. Their research encompasses an interdisciplinary approach involving materials chemistry, biomedical engineering, and neuroscience.

Their main research topics include:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor Materials and Devices
  • Neuroscience and Neural Engineering
  • Perovskite Materials and Applications
  • Photoreceptor and Optogenetics Research
  • Neural Networks and Reservoir Computing

Jang-Sik Lee's frequent coauthors are:

  • Ik-Jyae Kim
  • Min-Kyu Kim
  • Young-Jun Park
  • Jiwoung Choi
  • Youngjun Park

The scientist has published regularly in venues such as:

  • ACS Applied Materials & Interfaces
  • IEEE Electron Device Letters
  • Science Advances
  • Journal of Materials Chemistry C
  • ACS Applied Electronic Materials

Some recent publications by Jang-Sik Lee include:

  • Recent Advances and Future Prospects for Memristive Materials, Devices, and Systems (2023, ACS Nano)
  • CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory (2021, Science Advances)
  • Synergistic Improvement of Long-Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia-Based Oxide-Semiconductor Transistors (2020, Advanced Materials)
  • Ferroelectric Transistors for Memory and Neuromorphic Device Applications (2022, Advanced Materials)
  • Emerging Materials for Neuromorphic Devices and Systems (2020, iScience)

Their work has been cited extensively across these topics, reflecting a focus on emerging materials and device applications related to memory, neural computing, and synaptic technologies.

Best Publications

  • Flexible Hybrid Organic–Inorganic Perovskite Memory

    Chungwan Gu;Jang-Sik Lee

  • Ferroelectric Analog Synaptic Transistors

    Min-Kyu Kim;Jang-Sik Lee

  • Flexible organic transistor memory devices.

    Soo-Jin Kim;Jang-Sik Lee

  • Artificial Synapses with Short- and Long-Term Memory for Spiking Neural Networks Based on Renewable Materials.

    Youngjun Park;Jang-Sik Lee

  • Biocompatible and Flexible Chitosan-Based Resistive Switching Memory with Magnesium Electrodes

    Niloufar Raeis Hosseini;Jang-Sik Lee

  • Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties

    Jang Sik Lee;Jinhan Cho;Chiyoung Lee;Inpyo Kim

  • Short-Term Plasticity and Long-Term Potentiation in Artificial Biosynapses with Diffusive Dynamics

    Min-Kyu Kim;Jang-Sik Lee;Jang-Sik Lee

  • CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory

    Min-Kyu Kim;Ik-Jyae Kim;Jang-Sik Lee

  • Resistive Switching Memory Based on Bioinspired Natural Solid Polymer Electrolytes

    Niloufar Raeis Hosseini;Jang-Sik Lee

  • Synergistic Improvement of Long-Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia-Based Oxide-Semiconductor Transistors.

    Min-Kyu Kim;Jang-Sik Lee

  • Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers

    Jae Chul Park;Sangwook Kim;Sunil Kim;Changjung Kim

  • Flexible Artificial Synaptic Devices Based on Collagen from Fish Protein with Spike‐Timing‐Dependent Plasticity

    Niloufar Raeis-Hosseini;Youngjun Park;Jang-Sik Lee

  • Lead-free, air-stable hybrid organic–inorganic perovskite resistive switching memory with ultrafast switching and multilevel data storage

    Bohee Hwang;Jang-Sik Lee;Jang-Sik Lee

  • A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.

    Bohee Hwang;Jang-Sik Lee

  • Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices

    Yong-Mu Kim;Jang-Sik Lee

  • Plasma-Assisted Atomic Layer Growth of High-Quality Aluminum Oxide Thin Films

    Chang-Wook Jeong;Jang-Sik Lee;Seung-Ki Joo

  • Effect of halide-mixing on the switching behaviors of organic-inorganic hybrid perovskite memory

    Bohee Hwang;Chungwan Gu;Donghwa Lee;Jang-Sik Lee

  • Controlling the Resistive Switching Behavior in Starch-Based Flexible Biomemristors

    Niloufar Raeis-Hosseini;Jang-Sik Lee

  • Novel dielectric anomaly in the hole-doped La(2)Cu(1-x)Li(x)O(4) and La(2-x)Sr(x)NiO(4) insulators: signature of an electronic glassy state.

    Tuson Park;Z. Nussinov;K. R.A. Hazzard;V. A. Sidorov

  • Progress in non-volatile memory devices based on nanostructured materials and nanofabrication

    Jang-Sik Lee

  • Recent progress in gold nanoparticle-based non-volatile memory devices

    Jang-Sik Lee

  • Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers

    Soo-Jin Kim;Young-Su Park;Si-Hoon Lyu;Jang-Sik Lee

Frequent Co-Authors

Hyunjung Shin
Hyunjung Shin Sungkyunkwan University
Sang Yeol Lee
Sang Yeol Lee Yonsei University
Quanxi Jia
Quanxi Jia University at Buffalo, State University of New York
Kinam Kim
Kinam Kim Samsung (South Korea)
Sang-Wook Cheong
Sang-Wook Cheong Rutgers, The State University of New Jersey
Hyun Suk Jung
Hyun Suk Jung Sungkyunkwan University
S. R. Foltyn
S. R. Foltyn Los Alamos National Laboratory
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Jooho Moon
Jooho Moon Yonsei University

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