Feng Pan

Overview

Best Publications

• Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

  F. Pan;S. Gao;C. Chen;C. Song

  1470
  Citations

• Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

  Yu Chao Yang;Feng Pan;Qi Liu;Ming Liu

  1008
  Citations

• Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films

  F. Pan;C. Song;X.J. Liu;Y.C. Yang

  798
  Citations

• Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

  Cheng Song;Bin Cui;Fan Li;Xiangjun Zhou

  485
  Citations

• Observation of spin splitting torque in a collinear antiferromagnet RuO2

  Hua Bai;Lei Han;Xiaoyu Feng;Yongjian Zhou

  346
  Citations

• Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators.

  X. Z. Chen;R. Zarzuela;J. Zhang;C. Song

  326
  Citations

• Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped ZnO

  C. Song;K. W. Geng;F. Zeng;X. B. Wang

  307
  Citations

• Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system

  Sizhao Li;Fei Zeng;Chao Chen;Hongyan Liu

  293
  Citations

• Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

  Y. C. Yang;C. Song;X. H. Wang;F. Zeng

  292
  Citations

• Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO

  Guang Chen;Cheng Song;Chao Chen;Shuang Gao

  291
  Citations

• Spin-orbit torques: Materials, mechanisms, performances, and potential applications

  Cheng Song;Ruiqi Zhang;Liyang Liao;Yongjian Zhou

  274
  Citations

• Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

  Feng Pan;Chao Chen;Zhi-shun Wang;Yu-chao Yang

  273
  Citations

• Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

  Shuang Gao;Cheng Song;Chao Chen;Fei Zeng

  232
  Citations

• Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

  X.B. Wang;C. Song;K.W. Geng;F. Zeng

  231
  Citations

• Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in an antiferromagnet-based tunnel junction.

  Y. Y. Wang;C. Song;B. Cui;G. Y. Wang

  223
  Citations

• Observation of the antiferromagnetic spin Hall effect

  Xianzhe Chen;Shuyuan Shi;Guoyi Shi;Xiaolong Fan

  219
  Citations

• Efficient Spin-to-Charge Conversion via Altermagnetic Spin Splitting Effect in Antiferromagnet RuO_{2}.

  Unknown

  218
  Citations

• Electric field control of Néel spin-orbit torque in an antiferromagnet.

  Xianzhe Chen;Xiaofeng Zhou;Ran Cheng;Cheng Song

  206
  Citations

• Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

  C. Chen;Y. C. Yang;F. Zeng;F. Pan

  190
  Citations

• Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

  Yiming Sun;Meiqian Tai;Cheng Song;Ziyu Wang

  180
  Citations

• Correlation of oxygen vacancy variations to band gap changes in epitaxial ZnO thin films

  Hongyan Liu;Fei Zeng;Yisong Lin;Guangyue Wang

  178
  Citations

• Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

  Shibing Long;Luca Perniola;Carlo Cagli;Julien Buckley

  169
  Citations

• Growth, characterization and nonlinear optical properties of SrB4O7 crystals

  Feng Pan;Guangqiu Shen;Ruji Wang;Xiaoqing Wang

  163
  Citations