World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
80
Citations
22910
World Ranking
2703
National Ranking
862

Feng Pan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Feng Pan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 581 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Feng Pan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Feng Pan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 80 D-Index — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Feng Pan is affiliated with Tsinghua University in China and focuses research primarily within the fields of Engineering and Materials Science. Their subfields of study emphasize Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Automotive Engineering, and Mechanical Engineering.

The research topics addressed by Feng Pan cover a range of advanced materials and technologies related to energy storage and conversion. The main topics include:

  • Advancements in Battery Materials
  • Advanced Battery Materials and Technologies
  • Supercapacitor Materials and Fabrication
  • Advanced Battery Technologies Research
  • Extraction and Separation Processes
  • Conducting Polymers and Applications

Feng Pan has published extensively in several prominent journals. Frequent publication venues include:

  • Advanced Functional Materials (22 publications)
  • Advanced Energy Materials (20 publications)
  • Advanced Materials (15 publications)
  • Nano Energy (14 publications)
  • Small (13 publications)

Notable recent papers authored or co-authored by Feng Pan include:

  • Tuning Zn2+ coordination environment to suppress dendrite formation for high-performance Zn-ion batteries (2020, Nano Energy)
  • Structure and Properties of Prussian Blue Analogues in Energy Storage and Conversion Applications (2020, Advanced Functional Materials)
  • An Interface-Bridged Organic-Inorganic Layer that Suppresses Dendrite Formation and Side Reactions for Ultra-Long-Life Aqueous Zinc Metal Anodes (2020, Angewandte Chemie International Edition)
  • Highly Dispersed Cobalt Clusters in Nitrogen-Doped Porous Carbon Enable Multiple Effects for High-Performance Li-S Battery (2020, Advanced Energy Materials)
  • Optimizing Ion Pathway in Titanium Carbide MXene for Practical High-Rate Supercapacitor (2020, Advanced Energy Materials)

Feng Pan collaborates frequently with a core group of co-authors, including:

  • Luyi Yang (56 collaborations)
  • Shunning Li (54 collaborations)
  • Qinghe Zhao (35 collaborations)
  • Wenguang Zhao (30 collaborations)
  • Weiyuan Huang (24 collaborations)

Best Publications

  • Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

    F. Pan;S. Gao;C. Chen;C. Song

  • Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application.

    Yu Chao Yang;Feng Pan;Qi Liu;Ming Liu

  • Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films

    F. Pan;C. Song;X.J. Liu;Y.C. Yang

  • Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

    Cheng Song;Bin Cui;Fan Li;Xiangjun Zhou

  • Observation of spin splitting torque in a collinear antiferromagnet RuO2

    Hua Bai;Lei Han;Xiaoyu Feng;Yongjian Zhou

  • Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators.

    X. Z. Chen;R. Zarzuela;J. Zhang;C. Song

  • Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped ZnO

    C. Song;K. W. Geng;F. Zeng;X. B. Wang

  • Synaptic plasticity and learning behaviours mimicked through Ag interface movement in an Ag/conducting polymer/Ta memristive system

    Sizhao Li;Fei Zeng;Chao Chen;Hongyan Liu

  • Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

    Y. C. Yang;C. Song;X. H. Wang;F. Zeng

  • Resistive Switching and Magnetic Modulation in Cobalt‐Doped ZnO

    Guang Chen;Cheng Song;Chao Chen;Shuang Gao

  • Spin-orbit torques: Materials, mechanisms, performances, and potential applications

    Cheng Song;Ruiqi Zhang;Liyang Liao;Yongjian Zhou

  • Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

    Feng Pan;Chao Chen;Zhi-shun Wang;Yu-chao Yang

  • Dynamic Processes of Resistive Switching in Metallic Filament-Based Organic Memory Devices

    Shuang Gao;Cheng Song;Chao Chen;Fei Zeng

  • Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering

    X.B. Wang;C. Song;K.W. Geng;F. Zeng

  • Room-temperature perpendicular exchange coupling and tunneling anisotropic magnetoresistance in an antiferromagnet-based tunnel junction.

    Y. Y. Wang;C. Song;B. Cui;G. Y. Wang

  • Observation of the antiferromagnetic spin Hall effect

    Xianzhe Chen;Shuyuan Shi;Guoyi Shi;Xiaolong Fan

  • Efficient Spin-to-Charge Conversion via Altermagnetic Spin Splitting Effect in Antiferromagnet RuO_{2}.

    Unknown

  • Electric field control of Néel spin-orbit torque in an antiferromagnet.

    Xianzhe Chen;Xiaofeng Zhou;Ran Cheng;Cheng Song

  • Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device

    C. Chen;Y. C. Yang;F. Zeng;F. Pan

  • Competition between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

    Yiming Sun;Meiqian Tai;Cheng Song;Ziyu Wang

  • Correlation of oxygen vacancy variations to band gap changes in epitaxial ZnO thin films

    Hongyan Liu;Fei Zeng;Yisong Lin;Guangyue Wang

  • Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM

    Shibing Long;Luca Perniola;Carlo Cagli;Julien Buckley

  • Growth, characterization and nonlinear optical properties of SrB4O7 crystals

    Feng Pan;Guangqiu Shen;Ruji Wang;Xiaoqing Wang

Frequent Co-Authors

Fei Zeng
Fei Zeng Tsinghua University
Cheng Song
Cheng Song Tsinghua University
Can-Li Song
Can-Li Song Tsinghua University
Yuchao Yang
Yuchao Yang Peking University
Jingting Luo
Jingting Luo Shenzhen University
Huaqiang Wu
Huaqiang Wu Tsinghua University
Xiufeng Han
Xiufeng Han Chinese Academy of Sciences
Guoqi Li
Guoqi Li Shanghai Jiao Tong University
Ming Liu
Ming Liu Fudan University
Zhidong Zhang
Zhidong Zhang Chinese Academy of Sciences

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