Kuan-Chang Chang

Overview

Best Publications

• Resistance random access memory

  Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu

  536
  Citations

• Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

  Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  181
  Citations

• Physical and chemical mechanisms in oxide-based resistance random access memory.

  Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  163
  Citations

• HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design

  Zehui Peng;Facai Wu;Li Jiang;Guangsen Cao

  152
  Citations

• Atomic-level quantized reaction of HfOx memristor

  Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai

  127
  Citations

• Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

  Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou

  124
  Citations

• Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

  Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  120
  Citations

• Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

  Cong Ye;Cong Ye;Chao Zhan;Tsung-Ming Tsai;Kuan-Chang Chang

  116
  Citations

• A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

  Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Kuan-Chang Chang

  114
  Citations

• Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

  Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Hsing-Hua Wu

  101
  Citations

• Deformable, resilient, and mechanically-durable triboelectric nanogenerator based on recycled coffee waste for wearable power and self-powered smart sensors

  Mengjiao Li;Wei-Yuan Cheng;Yi-Chiun Li;Hsing-Mei Wu

  90
  Citations

• Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

  Rui Zhang;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  89
  Citations

• Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array

  Ya-Xiong Zhou;Yi Li;Yi Li;Yu-Ting Su;Zhuo-Rui Wang

  85
  Citations

• Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

  Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu

  78
  Citations

• Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode

  Chih-Yang Lin;Po-Hsun Chen;Ting-Chang Chang;Kuan-Chang Chang

  76
  Citations

• Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

  Tian-Jian Chu;Ting-Chang Chang;Tsung-Ming Tsai;Hsing-Hua Wu

  74
  Citations

• Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO 2 -Based Resistive Random Access Memory

  Po-Hsun Chen;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  74
  Citations

• The Effect of Silicon Oxide Based RRAM with Tin Doping

  Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu

  74
  Citations

• Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment.

  Fang-Yuan Yuan;Ning Deng;Chih-Cheng Shih;Yi-Ting Tseng

  73
  Citations

• Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

  Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Geng-Wei Chang

  72
  Citations

• Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

  Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Yong-En Syu

  72
  Citations