D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 31 Citations 3,676 168 World Ranking 7585 National Ranking 1129

Overview

What is he best known for?

The fields of study Kuan-Chang Chang is best known for:

  • Logic gate
  • Silicon
  • Transistor

His Doping research extends to the thematically linked field of Optoelectronics. Doping is frequently linked to Optoelectronics in his study. He undertakes multidisciplinary studies into Metallurgy and Chemical engineering in his work. In his works, Kuan-Chang Chang undertakes multidisciplinary study on Chemical engineering and Metallurgy. He incorporates Electrical engineering and Electronic engineering in his studies. His study deals with a combination of Electronic engineering and Electrical engineering. He integrates Resistive random-access memory and Non-volatile memory in his research. He combines Non-volatile memory and Resistive random-access memory in his research. Many of his studies on Nanotechnology involve topics that are commonly interrelated, such as Thin film.

His most cited work include:

  • Resistance random access memory (321 citations)
  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure (118 citations)
  • Physical and chemical mechanisms in oxide-based resistance random access memory (117 citations)

What are the main themes of his work throughout his whole career to date

Kuan-Chang Chang links relevant study fields such as Layer (electronics) and Thermal conduction in the subject of Composite material. His research brings together the fields of Thin-film transistor and Layer (electronics). He performs multidisciplinary study on Thin-film transistor and Transistor in his works. Many of his studies involve connections with topics such as Voltage and Transistor. As part of his studies on Voltage, Kuan-Chang Chang often connects relevant subjects like Quantum mechanics. Many of his studies on Quantum mechanics involve topics that are commonly interrelated, such as Resistive random-access memory. His Composite material research extends to the thematically linked field of Thermal conduction. His study brings together the fields of Doping and Optoelectronics. He regularly ties together related areas like Resistive touchscreen in his Electrical engineering studies.

Kuan-Chang Chang most often published in these fields:

  • Optoelectronics (83.93%)
  • Electrical engineering (66.07%)
  • Nanotechnology (63.39%)

What were the highlights of his more recent work (between 2019-2021)?

  • Nanotechnology (78.57%)
  • Optoelectronics (71.43%)
  • Electrical engineering (50.00%)

In recent works Kuan-Chang Chang was focusing on the following fields of study:

His study focuses on the intersection of Swing and fields such as Mechanical engineering with connections in the field of Work (physics). Work (physics) is closely attributed to Mechanical engineering in his research. Kuan-Chang Chang integrates many fields, such as Nanotechnology and Microelectronics, in his works. Kuan-Chang Chang regularly links together related areas like Non-volatile memory in his Optoelectronics studies. Kuan-Chang Chang performs multidisciplinary study in the fields of Electrical engineering and Process engineering via his papers. Kuan-Chang Chang conducts interdisciplinary study in the fields of Process engineering and Electrical engineering through his works. Kuan-Chang Chang undertakes multidisciplinary studies into Voltage and Dielectric in his work. Kuan-Chang Chang brings together Dielectric and Voltage to produce work in his papers. Kuan-Chang Chang merges Supercritical fluid with Supercritical carbon dioxide in his research.

Between 2019 and 2021, his most popular works were:

  • HfO 2 ‐Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri‐Layer HfO 2 /BiFeO 3 /HfO 2 Design (36 citations)
  • Deformable, resilient, and mechanically-durable triboelectric nanogenerator based on recycled coffee waste for wearable power and self-powered smart sensors (29 citations)
  • An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode (21 citations)

In his most recent research, the most cited works focused on:

  • Memristor
  • Voltage
  • Piezoelectricity

Kuan-Chang Chang performs integrative study on Nanotechnology and Transmission electron microscopy in his works. He carries out multidisciplinary research, doing studies in Transmission electron microscopy and Nanotechnology. His research brings together the fields of Doping and Optoelectronics. Many of his studies on Doping involve topics that are commonly interrelated, such as Tin oxide. His study connects Optoelectronics and Tin oxide. His study in Physical chemistry extends to Resistive random-access memory with its themes. Many of his studies on Physical chemistry involve topics that are commonly interrelated, such as Electrode. His study on Electrode is mostly dedicated to connecting different topics, such as Resistive random-access memory. His research is interdisciplinary, bridging the disciplines of Bismuth and Metallurgy.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Resistance random access memory

Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu.
Materials Today (2014)

329 Citations

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung.
IEEE Electron Device Letters (2011)

179 Citations

Physical and chemical mechanisms in oxide-based resistance random access memory.

Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang.
Nanoscale Research Letters (2015)

139 Citations

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Kuan-Chang Chang.
Applied Physics Letters (2009)

112 Citations

Atomic-level quantized reaction of HfOx memristor

Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai.
Applied Physics Letters (2013)

111 Citations

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen.
Nano Letters (2014)

107 Citations

Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

Cong Ye;Cong Ye;Chao Zhan;Tsung-Ming Tsai;Kuan-Chang Chang.
Applied Physics Express (2014)

96 Citations

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Hsing-Hua Wu.
IEEE Electron Device Letters (2013)

94 Citations

Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu.
Applied Physics Letters (2011)

74 Citations

Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou.
IEEE Electron Device Letters (2017)

73 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Kuan-Chang Chang

Ting-Chang Chang

Ting-Chang Chang

National Sun Yat-sen University

Publications: 171

Ming Liu

Ming Liu

Chinese Academy of Sciences

Publications: 47

Simon M. Sze

Simon M. Sze

National Yang Ming Chiao Tung University

Publications: 43

Shibing Long

Shibing Long

University of Science and Technology of China

Publications: 42

Tsung-Ming Tsai

Tsung-Ming Tsai

National Sun Yat-sen University

Publications: 33

Hangbing Lv

Hangbing Lv

Chinese Academy of Sciences

Publications: 32

Xiangshui Miao

Xiangshui Miao

Huazhong University of Science and Technology

Publications: 29

Ye Zhou

Ye Zhou

Shenzhen University

Publications: 22

Su-Ting Han

Su-Ting Han

Shenzhen University

Publications: 22

Tseung-Yuen Tseng

Tseung-Yuen Tseng

National Yang Ming Chiao Tung University

Publications: 22

Jack C. Lee

Jack C. Lee

The University of Texas at Austin

Publications: 21

Byung-Gook Park

Byung-Gook Park

Seoul National University

Publications: 21

Sung Hyun Jo

Sung Hyun Jo

CrossBar Inc.

Publications: 18

Yue Hao

Yue Hao

Xidian University

Publications: 16

Enrique Miranda

Enrique Miranda

Autonomous University of Barcelona

Publications: 16

Hao Wang

Hao Wang

University of Southern Queensland

Publications: 16

Trending Scientists

Mohit Bansal

Mohit Bansal

University of North Carolina at Chapel Hill

Raphael Volz

Raphael Volz

Pforzheim University of Applied Sciences

Michael J. Barclay

Michael J. Barclay

University of Rochester

Bibudhendra Sarkar

Bibudhendra Sarkar

University of Toronto

Toh-Seok Kam

Toh-Seok Kam

University of Malaya

Mohammad Reza Toroghinejad

Mohammad Reza Toroghinejad

Isfahan University of Technology

Brigitte Mauch-Mani

Brigitte Mauch-Mani

University of Fribourg

Jan E. Vermaat

Jan E. Vermaat

Norwegian University of Life Sciences

Gunnar Skov Simonsen

Gunnar Skov Simonsen

University Hospital of North Norway

Martin de Luis

Martin de Luis

University of Zaragoza

Robert J. W. Brewin

Robert J. W. Brewin

University of Exeter

Simone R. Alin

Simone R. Alin

National Oceanic and Atmospheric Administration

Bradley S. Galer

Bradley S. Galer

Endo Pharmaceuticals (United States)

Harry H. Wright

Harry H. Wright

University of South Carolina

Suniya S. Luthar

Suniya S. Luthar

Columbia University

Sean Carey

Sean Carey

California Institute of Technology

Something went wrong. Please try again later.