D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 31 Citations 3,301 134 World Ranking 5889 National Ranking 690

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Silicon
  • Optoelectronics

His primary areas of study are Resistive random-access memory, Optoelectronics, Silicon oxide, Doping and Nanotechnology. While the research belongs to areas of Resistive random-access memory, Kuan-Chang Chang spends his time largely on the problem of Schottky diode, intersecting his research to questions surrounding Indium tin oxide, Joule heating and X-ray photoelectron spectroscopy. His Optoelectronics study combines topics in areas such as Resistive switching, Voltage and Nanopillar.

The concepts of his Voltage study are interwoven with issues in Layer, Porous silicon and Tin. His Doping study deals with Thin film intersecting with Titanium, Thin-film transistor and Tin oxide. His research integrates issues of Reliability, Protein filament and Current in his study of Nanotechnology.

His most cited work include:

  • Resistance random access memory (214 citations)
  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure (118 citations)
  • Physical and chemical mechanisms in oxide-based resistance random access memory. (96 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Resistive random-access memory, Nanotechnology, Voltage and Thermal conduction. His Optoelectronics research incorporates elements of Layer, Thin-film transistor and Tin. Kuan-Chang Chang integrates many fields in his works, including Resistive random-access memory and Silicon oxide.

His Nanotechnology research is multidisciplinary, incorporating perspectives in Resistor, Protein filament and Reliability. The Voltage study combines topics in areas such as High-κ dielectric, Dielectric, Resistive touchscreen and Electrical conductor. Kuan-Chang Chang interconnects Space charge, Condensed matter physics and Activation energy in the investigation of issues within Thermal conduction.

He most often published in these fields:

  • Optoelectronics (77.22%)
  • Resistive random-access memory (57.59%)
  • Nanotechnology (24.05%)

What were the highlights of his more recent work (between 2017-2021)?

  • Optoelectronics (77.22%)
  • Dielectric (10.13%)
  • Doping (13.92%)

In recent papers he was focusing on the following fields of study:

Kuan-Chang Chang mostly deals with Optoelectronics, Dielectric, Doping, Transistor and Thin-film transistor. Kuan-Chang Chang focuses mostly in the field of Optoelectronics, narrowing it down to topics relating to Current and, in certain cases, Resistive random-access memory. His Resistive random-access memory research is multidisciplinary, relying on both Chemical physics and Activation energy.

His Dielectric research also works with subjects such as

  • Carbon nanotube, which have a strong connection to Passivation, X-ray photoelectron spectroscopy and Hysteresis,
  • Voltage that connect with fields like Permittivity, Miniaturization, Resistive touchscreen and Engineering physics. His study in Doping is interdisciplinary in nature, drawing from both Chemical bath deposition and Nanostructure. His work focuses on many connections between Silicon and other disciplines, such as Oxide, that overlap with his field of interest in Tin.

Between 2017 and 2021, his most popular works were:

  • An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode (10 citations)
  • Insulating Property Improvement of Polyimide in Devices by Low‐Temperature Supercritical Fluids (7 citations)
  • Improving Performance of All-Carbon-Nanotube Thin-Film Transistors by Low Temperature Supercritical CO 2 Fluid Activation (6 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Silicon
  • Integrated circuit

The scientist’s investigation covers issues in Optoelectronics, Resistive random-access memory, Doping, Hafnium and Current. His Optoelectronics research includes elements of Fourier transform infrared spectroscopy, Passivation, Carbon nanotube, X-ray photoelectron spectroscopy and Threshold voltage. Voltage covers Kuan-Chang Chang research in Resistive random-access memory.

His studies in Doping integrate themes in fields like Resistive switching and Nanostructure. Throughout his Hafnium studies, Kuan-Chang Chang incorporates elements of other sciences such as Schottky diode, Performance improvement, Thermal conduction and Atomic radius. His work deals with themes such as Gadolinium, Tin, Oxide and Silicon, which intersect with Current.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Resistance random access memory

Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu.
Materials Today (2014)

336 Citations

Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung.
IEEE Electron Device Letters (2011)

179 Citations

Physical and chemical mechanisms in oxide-based resistance random access memory.

Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang.
Nanoscale Research Letters (2015)

126 Citations

Atomic-level quantized reaction of HfOx memristor

Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai.
Applied Physics Letters (2013)

119 Citations

A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Kuan-Chang Chang.
Applied Physics Letters (2009)

108 Citations

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen.
Nano Letters (2014)

95 Citations

Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Hsing-Hua Wu.
IEEE Electron Device Letters (2013)

94 Citations

Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

Cong Ye;Cong Ye;Chao Zhan;Tsung-Ming Tsai;Kuan-Chang Chang.
Applied Physics Express (2014)

91 Citations

Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu.
Applied Physics Letters (2011)

71 Citations

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Yong-En Syu.
IEEE Electron Device Letters (2012)

71 Citations

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