World's Best Scientists 2026 revealed!
Kuan-Chang Chang

Kuan-Chang Chang

D-Index & Metrics

Engineering and Technology

D-Index
39
Citations
5297
World Ranking
7781
National Ranking
1391

Kuan-Chang Chang publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Kuan-Chang Chang sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 176 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Kuan-Chang Chang D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Kuan-Chang Chang sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 39 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Kuan-Chang Chang is affiliated with Peking University in China and has an extensive publication record spanning multiple fields of engineering and applied sciences. Their scientific contributions focus primarily on the areas of engineering, computer science, and materials science. Within these domains, their research emphasizes subfields such as electrical and electronic engineering, control and systems engineering, biomedical engineering, artificial intelligence, and cellular and molecular neuroscience.

The researcher's work covers a variety of topics, prominently including advanced memory and neural computing, thin-film transistor technologies, semiconductor materials and devices, neuroscience and neural engineering, advanced sensor and energy harvesting materials, photoreceptor and optogenetics research, and smart grid security and resilience.

Recent publications by Kuan-Chang Chang include:

  • "HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design," 2021, Advanced Functional Materials
  • "Deformable, resilient, and mechanically-durable triboelectric nanogenerator based on recycled coffee waste for wearable power and self-powered smart sensors," 2020, Nano Energy
  • "Agent-based middleware framework using distributed CPS for improving resource utilization in smart city," 2020, Future Generation Computer Systems
  • "Semiconductor-based surface-enhanced Raman scattering sensing platforms: State of the art, applications and prospects in food safety," 2024, Trends in Food Science & Technology
  • "A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments," 2020, Small

Kuan-Chang Chang frequently collaborates with other researchers. Their most frequent co-authors include Lei Li, Kai-Chun Chu, Hsiao-Chuan Wang, Fu-Hsiang Chang, and Yuh-Chung Lin.

The scholar has published extensively in several distinct venues, with frequent publications appearing in:

  • ACS Applied Materials & Interfaces
  • Advanced Functional Materials
  • Nano Energy
  • Nanoscale
  • ACS Sustainable Chemistry & Engineering

In addition to journal articles, Kuan-Chang Chang has contributed to book publications primarily through Springer International Publishing and Springer Nature. Notable book contributions include proceedings from the 8th and 9th International Conference on Advanced Intelligent Systems and Informatics (2022 and 2023), as well as a chapter in "Advanced Machine Learning Technologies and Applications" (2021).

Best Publications

  • Resistance random access memory

    Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu

  • Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure

    Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung

  • Physical and chemical mechanisms in oxide-based resistance random access memory.

    Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  • HfO2-Based Memristor as an Artificial Synapse for Neuromorphic Computing with Tri-Layer HfO2/BiFeO3/HfO2 Design

    Zehui Peng;Facai Wu;Li Jiang;Guangsen Cao

  • Atomic-level quantized reaction of HfOx memristor

    Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai

  • Functionally Complete Boolean Logic in 1T1R Resistive Random Access Memory

    Zhuo-Rui Wang;Yu-Ting Su;Yi Li;Ya-Xiong Zhou

  • Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  • Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon

    Cong Ye;Cong Ye;Chao Zhan;Tsung-Ming Tsai;Kuan-Chang Chang

  • A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

    Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Kuan-Chang Chang

  • Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Hsing-Hua Wu

  • Deformable, resilient, and mechanically-durable triboelectric nanogenerator based on recycled coffee waste for wearable power and self-powered smart sensors

    Mengjiao Li;Wei-Yuan Cheng;Yi-Chiun Li;Hsing-Mei Wu

  • Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

    Rui Zhang;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  • Nonvolatile reconfigurable sequential logic in a HfO2 resistive random access memory array

    Ya-Xiong Zhou;Yi Li;Yi Li;Yu-Ting Su;Zhuo-Rui Wang

  • Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu

  • Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode

    Chih-Yang Lin;Po-Hsun Chen;Ting-Chang Chang;Kuan-Chang Chang

  • Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

    Tian-Jian Chu;Ting-Chang Chang;Tsung-Ming Tsai;Hsing-Hua Wu

  • Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO 2 -Based Resistive Random Access Memory

    Po-Hsun Chen;Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai

  • The Effect of Silicon Oxide Based RRAM with Tin Doping

    Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu

  • Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment.

    Fang-Yuan Yuan;Ning Deng;Chih-Cheng Shih;Yi-Ting Tseng

  • Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical $\hbox{CO}_{2}$ Fluid Treatment

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Geng-Wei Chang

  • Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

    Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Yong-En Syu

Frequent Co-Authors

Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Tsung-Ming Tsai
Tsung-Ming Tsai National Sun Yat-sen University
Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Rui Zhang
Rui Zhang National University of Singapore
Jin-Cheng Zheng
Jin-Cheng Zheng Xiamen University
Shengdong Zhang
Shengdong Zhang Peking University
Yao-Feng Chang
Yao-Feng Chang The University of Texas at Austin
Huaqiang Wu
Huaqiang Wu Tsinghua University
He Qian
He Qian Tsinghua University
Ming-Jinn Tsai
Ming-Jinn Tsai Industrial Technology Research Institute

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Kuan-Chang Chang

Trending Scientists