His primary areas of study are Resistive random-access memory, Optoelectronics, Silicon oxide, Doping and Nanotechnology. While the research belongs to areas of Resistive random-access memory, Kuan-Chang Chang spends his time largely on the problem of Schottky diode, intersecting his research to questions surrounding Indium tin oxide, Joule heating and X-ray photoelectron spectroscopy. His Optoelectronics study combines topics in areas such as Resistive switching, Voltage and Nanopillar.
The concepts of his Voltage study are interwoven with issues in Layer, Porous silicon and Tin. His Doping study deals with Thin film intersecting with Titanium, Thin-film transistor and Tin oxide. His research integrates issues of Reliability, Protein filament and Current in his study of Nanotechnology.
His primary areas of investigation include Optoelectronics, Resistive random-access memory, Nanotechnology, Voltage and Thermal conduction. His Optoelectronics research incorporates elements of Layer, Thin-film transistor and Tin. Kuan-Chang Chang integrates many fields in his works, including Resistive random-access memory and Silicon oxide.
His Nanotechnology research is multidisciplinary, incorporating perspectives in Resistor, Protein filament and Reliability. The Voltage study combines topics in areas such as High-κ dielectric, Dielectric, Resistive touchscreen and Electrical conductor. Kuan-Chang Chang interconnects Space charge, Condensed matter physics and Activation energy in the investigation of issues within Thermal conduction.
Kuan-Chang Chang mostly deals with Optoelectronics, Dielectric, Doping, Transistor and Thin-film transistor. Kuan-Chang Chang focuses mostly in the field of Optoelectronics, narrowing it down to topics relating to Current and, in certain cases, Resistive random-access memory. His Resistive random-access memory research is multidisciplinary, relying on both Chemical physics and Activation energy.
His Dielectric research also works with subjects such as
The scientist’s investigation covers issues in Optoelectronics, Resistive random-access memory, Doping, Hafnium and Current. His Optoelectronics research includes elements of Fourier transform infrared spectroscopy, Passivation, Carbon nanotube, X-ray photoelectron spectroscopy and Threshold voltage. Voltage covers Kuan-Chang Chang research in Resistive random-access memory.
His studies in Doping integrate themes in fields like Resistive switching and Nanostructure. Throughout his Hafnium studies, Kuan-Chang Chang incorporates elements of other sciences such as Schottky diode, Performance improvement, Thermal conduction and Atomic radius. His work deals with themes such as Gadolinium, Tin, Oxide and Silicon, which intersect with Current.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Resistance random access memory
Ting Chang Chang;Kuan Chang Chang;Tsung Ming Tsai;Tian Jian Chu.
Materials Today (2014)
Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure
Yong-En Syu;Ting-Chang Chang;Tsung-Ming Tsai;Ya-Chi Hung.
IEEE Electron Device Letters (2011)
Physical and chemical mechanisms in oxide-based resistance random access memory.
Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang.
Nanoscale Research Letters (2015)
Atomic-level quantized reaction of HfOx memristor
Yong-En Syu;Ting-Chang Chang;Jyun-Hao Lou;Tsung-Ming Tsai.
Applied Physics Letters (2013)
A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid
Min-Chen Chen;Ting-Chang Chang;Sheng-Yao Huang;Kuan-Chang Chang.
Applied Physics Letters (2009)
Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.
Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen.
Nano Letters (2014)
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Hsing-Hua Wu.
IEEE Electron Device Letters (2013)
Low-power bipolar resistive switching TiN/HfO2/ITO memory with self-compliance current phenomenon
Cong Ye;Cong Ye;Chao Zhan;Tsung-Ming Tsai;Kuan-Chang Chang.
Applied Physics Express (2014)
Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
Kuan-Chang Chang;Tsung-Ming Tsai;Ting-Chang Chang;Yong-En Syu.
Applied Physics Letters (2011)
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
Tsung-Ming Tsai;Kuan-Chang Chang;Ting-Chang Chang;Yong-En Syu.
IEEE Electron Device Letters (2012)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
National Sun Yat-sen University
National Sun Yat-sen University
National Yang Ming Chiao Tung University
National University of Singapore
Xiamen University
Peking University
Tsinghua University
Tsinghua University
ITRI International
University of Southern Queensland
University of North Carolina at Chapel Hill
Pforzheim University of Applied Sciences
University of Rochester
University of Toronto
University of Malaya
Isfahan University of Technology
University of Fribourg
Norwegian University of Life Sciences
University Hospital of North Norway
University of Zaragoza
University of Exeter
National Oceanic and Atmospheric Administration
Endo Pharmaceuticals (United States)
University of South Carolina
Columbia University
California Institute of Technology