World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
3686
World Ranking
5906
National Ranking
1987

Yao-Feng Chang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Yao-Feng Chang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 115 publications — 6th percentile

6% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Yao-Feng Chang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Yao-Feng Chang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 34 D-Index — 18th percentile

18% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Yao-Feng Chang is affiliated with Intel in the United States. Their research primarily lies within the broad field of engineering, with a focused expertise in electrical and electronic engineering. Their work spans several interconnected areas, including advanced memory and neural computing, ferroelectric and negative capacitance devices, neuroscience and neural engineering, semiconductor materials and devices, transition metal oxide nanomaterials, photoreceptor and optogenetics research, and neural networks and reservoir computing.

Their publication record includes contributions to a variety of scientific venues, reflecting a consistent engagement with key journals and conferences in their fields. Frequent publication venues include IEEE Transactions on Electron Devices, Micromachines, Advanced Intelligent Systems, Frontiers in Nanotechnology, and Advanced Functional Materials.

Some notable recent papers by Yao-Feng Chang include:

  • Complementary Metal-Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing, 2020, Advanced Intelligent Systems
  • Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions, 2021, Micromachines
  • Reliability Improvement and Effective Switching Layer Model of Thin-Film MoS2 Memristors, 2023, Advanced Functional Materials
  • Complementary Metal-Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing, 2020, Advanced Intelligent Systems
  • Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems, 2024, ACS Nano

Yao-Feng Chang's collaborative work includes frequent partnerships with several researchers, including:

  • Ying-Chen Chen
  • Jack C. Lee
  • Yifu Huang
  • Amirali Amirsoleimani
  • Deji Akinwande

Their research topics cover:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering
  • Semiconductor materials and devices
  • Transition Metal Oxide Nanomaterials
  • Photoreceptor and optogenetics research
  • Neural Networks and Reservoir Computing

In addition to journal publications, Yao-Feng Chang has contributed to book literature, with a notable publication titled Memristor - An Emerging Device for Post-Moore's Computing and Applications released in 2021 under the IntechOpen publisher.

Best Publications

  • “Cut‐and‐Paste” Manufacture of Multiparametric Epidermal Sensor Systems

    Shixuan Yang;Ying Chen Chen;Luke Nicolini;Praveenkum Pasupathy

  • Analog Synaptic Behavior of a Silicon Nitride Memristor

    Sungjun Kim;Hyungjin Kim;Sungmin Hwang;Min-Hwi Kim

  • Physical and chemical mechanisms in oxide-based resistance random access memory.

    Kuan-Chang Chang;Ting-Chang Chang;Tsung-Ming Tsai;Rui Zhang

  • Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

    Mostafa Rahimi Azghadi;Ying-Chen Chen;Jason K. Eshraghian;Jia Chen

  • Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Li Ji;Yao Feng Chang;Burt Fowler;Ying Chen Chen

  • Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

    Sungjun Kim;Jia Chen;Ying-Chen Chen;Min-Hwi Kim

  • Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

    Yao Feng Chang;Burt Fowler;Ying Chen Chen;Yen Ting Chen

  • Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

    Sungjun Kim;Sunghun Jung;Min-Hwi Kim;Ying-Chen Chen

  • Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

    Yao Feng Chang;Burt Fowler;Ying Chen Chen;Fei Zhou

  • Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

    Yao-Feng Chang;Pai-Yu Chen;Burt Fowler;Yen-Ting Chen

  • Electroforming and resistive switching in silicon dioxide resistive memory devices

    Burt W. Fowler;Yao Feng Chang;Fei Zhou;Yanzhen Wang

  • A sub-1-volt analog metal oxide memristive-based synaptic device for energy-efficient spike-based computing systems

    Cheng-Chih Hsieh;Anupam Roy;Yao-Feng Chang;Davood Shahrjerdi

  • Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode

    Chih-Yang Lin;Po-Hsun Chen;Ting-Chang Chang;Kuan-Chang Chang

  • Blue mixed host organic light emitting devices

    S.W. Liu;C.A. Huang;J.H. Lee;K.H. Yang

  • Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

    Yao Feng Chang;Burt Fowler;Ying Chen Chen;Yen Ting Chen

  • Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

    Tian-Jian Chu;Ting-Chang Chang;Tsung-Ming Tsai;Hsing-Hua Wu

  • A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems

    Cheng Chih Hsieh;Anupam Roy;Yao Feng Chang;Davood Shahrjerdi

  • Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

    Yanzhen Wang;Yen-Ting Chen;Fei Xue;Fei Zhou

  • Non-Volatile RRAM Embedded into 22FFL FinFET Technology

    O. Golonzka;U. Arslan;P. Bai;M. Bohr

  • Study of polarity effect in SiOx-based resistive switching memory

    Yao Feng Chang;Pai Yu Chen;Yen Ting Chen;Fei Xue

  • Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

    Fei Zhou;Yao Feng Chang;Burt Fowler;Kwangsub Byun

Frequent Co-Authors

Jack C. Lee
Jack C. Lee The University of Texas at Austin
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Sungjun Kim
Sungjun Kim Dongguk University
Byung-Gook Park
Byung-Gook Park Seoul National University
Tsung-Ming Tsai
Tsung-Ming Tsai National Sun Yat-sen University
Kuan-Chang Chang
Kuan-Chang Chang Peking University
Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Pai-Yu Chen
Pai-Yu Chen Arizona State University
Edward T. Yu
Edward T. Yu The University of Texas at Austin

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