Anthony J. Kenyon mainly focuses on Silicon, Optoelectronics, Resistive random-access memory, Silicon oxide and Nanotechnology. The concepts of his Silicon study are interwoven with issues in Oscillator strength, Quantum dot, Atomic physics and Photoluminescence, Analytical chemistry. Particularly relevant to Doping is his body of work in Optoelectronics.
The various areas that Anthony J. Kenyon examines in his Resistive random-access memory study include Conductance and Electronic engineering, Memristor. His Silicon oxide study combines topics in areas such as Non-volatile memory, Material system, Quantum tunnelling and Crossbar switch. His research integrates issues of Suboxide, Fluorescence and Physical chemistry in his study of Nanotechnology.
Anthony J. Kenyon mainly investigates Silicon, Optoelectronics, Engineering physics, Nanotechnology and Resistive random-access memory. His work deals with themes such as Doping, Erbium, Nanoclusters, Luminescence and Photoluminescence, which intersect with Silicon. As part of the same scientific family, Anthony J. Kenyon usually focuses on Photoluminescence, concentrating on Thin film and intersecting with Chemical vapor deposition.
As a member of one scientific family, Anthony J. Kenyon mostly works in the field of Optoelectronics, focusing on Oxide and, on occasion, Electrical conductor. His Engineering physics research incorporates elements of Silicon oxide and Resistive switching. The Resistive random-access memory study combines topics in areas such as Conductance, Neuromorphic engineering and Memristor.
Anthony J. Kenyon spends much of his time researching Resistive random-access memory, Optoelectronics, Engineering physics, Nanotechnology and Neuromorphic engineering. His Resistive random-access memory research is multidisciplinary, incorporating elements of Nanosecond, Electronic engineering, Memristor and Filamentation. His work in the fields of Optoelectronics, such as Suboxide and Silicon, overlaps with other areas such as Conductive atomic force microscopy.
His Engineering physics research focuses on subjects like Silicon oxide, which are linked to Oxide. His study in the fields of Nanoscopic scale and Nanopillar under the domain of Nanotechnology overlaps with other disciplines such as Hydrogen silsesquioxane. His studies deal with areas such as Non-volatile memory and Spiking neural network as well as Neuromorphic engineering.
His primary areas of investigation include Resistive random-access memory, Neuromorphic engineering, Optoelectronics, Electronic engineering and Nanotechnology. His Resistive random-access memory research is multidisciplinary, relying on both Memristor, Silicon oxide, Vacancy defect and Reliability. His Silicon oxide research includes elements of Oxide, Amorphous silicon, Silicon and Photoconductivity.
His Optoelectronics research integrates issues from Electroforming, Solar energy, Fluorophore, Quantum yield and Microstructure. His study looks at the relationship between Solar energy and fields such as Doping, as well as how they intersect with chemical problems. His Nanoscopic scale study, which is part of a larger body of work in Nanotechnology, is frequently linked to Sources of error, Trinitrotoluene, Sensitivity and Pentaerythritol tetranitrate, bridging the gap between disciplines.
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Recent developments in rare-earth doped materials for optoelectronics
Progress in Quantum Electronics (2002)
Recommended Methods to Study Resistive Switching Devices
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)
Erbium in silicon
A J Kenyon.
Semiconductor Science and Technology (2005)
OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS
A J Kenyon;P F Trwoga;M Federighi;C W Pitt.
Journal of Physics: Condensed Matter (1994)
Resistive switching in silicon suboxide films
Adnan Mehonic;Sébastien Cueff;Maciej Wojdak;Stephen Hudziak.
Journal of Applied Physics (2012)
Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters
P. F. Trwoga;A. J. Kenyon;C. W. Pitt.
Journal of Applied Physics (1998)
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
A. J. Kenyon;C. E. Chryssou;C. W. Pitt;T. Shimizu-Iwayama.
Journal of Applied Physics (2002)
Committee machines-a universal method to deal with non-idealities in memristor-based neural networks.
D. Joksas;P. Freitas;Z. Chai;W. H. Ng.
Nature Communications (2020)
Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films
C. E. Chryssou;A. J. Kenyon;T. S. Iwayama;C. W. Pitt.
Applied Physics Letters (1999)
Quantum Conductance in Silicon Oxide Resistive Memory Devices
Adnan Mehonic;A Vrajitoarea;S Cueff;S Cueff;S Hudziak.
Scientific Reports (2013)
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