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D-Index & Metrics

Engineering and Technology

D-Index
39
Citations
8767
World Ranking
7550
National Ranking
471

Overview

Anthony J. Kenyon is affiliated with University College London in the United Kingdom. Their research spans multiple disciplines within engineering and computer science with a focus on areas such as advanced memory and neural computing, and semiconductor materials.

Their work is distributed across several main fields of study:

  • Engineering
  • Computer Science

Within these fields, their subfields of specialization include:

  • Electrical and Electronic Engineering
  • Artificial Intelligence
  • Cellular and Molecular Neuroscience
  • Computer Networks and Communications
  • Materials Chemistry

The primary research topics they have contributed to cover:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering
  • Semiconductor materials and devices
  • CCD and CMOS Imaging Sensors
  • Neural Networks and Reservoir Computing
  • Neural dynamics and brain function

Anthony J. Kenyon has coauthored papers with frequently collaborating researchers including Adnan Mehonić, Wing H. Ng, Daniel J. Mannion, Mark Buckwell, and Dovydas Joksas.

Their publications appear in a range of venues, with multiple contributions to:

  • arXiv (Cornell University)
  • Advanced Intelligent Systems
  • APL Materials
  • Zenodo (CERN European Organization for Nuclear Research)
  • Nature

Recent representative papers encompass the following:

  • Brain-inspired computing needs a master plan, 2022, Nature
  • Hardware implementation of memristor-based artificial neural networks, 2024, Nature Communications
  • Memristors-From In-Memory Computing, Deep Learning Acceleration, and Spiking Neural Networks to the Future of Neuromorphic and Bio-Inspired Computing, 2020, Advanced Intelligent Systems
  • Standards for the Characterization of Endurance in Resistive Switching Devices, 2021, ACS Nano
  • Complementary Metal-Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing, 2020, Advanced Intelligent Systems

Best Publications

  • Recent developments in rare-earth doped materials for optoelectronics

    A.J Kenyon

  • Brain-inspired computing needs a master plan

    Unknown

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Erbium in silicon

    A J Kenyon

  • OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS

    A J Kenyon;P F Trwoga;M Federighi;C W Pitt

  • Committee machines-a universal method to deal with non-idealities in memristor-based neural networks.

    D. Joksas;P. Freitas;Z. Chai;W. H. Ng

  • Resistive switching in silicon suboxide films

    Adnan Mehonic;Sébastien Cueff;Maciej Wojdak;Stephen Hudziak

  • Memristors - from In-memory computing, Deep Learning Acceleration, Spiking Neural Networks, to the Future of Neuromorphic and Bio-inspired Computing.

    Adnan Mehonic;Abu Sebastian;Bipin Rajendran;Osvaldo Simeone

  • The origin of photoluminescence from thin films of silicon-rich silica

    A. J. Kenyon;P. F. Trwoga;C. W. Pitt;G. Rehm

  • Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters

    P. F. Trwoga;A. J. Kenyon;C. W. Pitt

  • Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms

    A. J. Kenyon;C. E. Chryssou;C. W. Pitt;T. Shimizu-Iwayama

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Quantum Conductance in Silicon Oxide Resistive Memory Devices

    Adnan Mehonic;A Vrajitoarea;S Cueff;S Cueff;S Hudziak

  • Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?

    Adnan Mehonic;Alexander L. Shluger;David Gao;Ilia Valov

  • Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films

    C. E. Chryssou;A. J. Kenyon;T. S. Iwayama;C. W. Pitt

  • Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell.

    Adnan Mehonic;Anthony J. Kenyon

  • Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

    Mostafa Rahimi Azghadi;Ying-Chen Chen;Jason K. Eshraghian;Jia Chen

  • Electrically tailored resistance switching in silicon oxide.

    Adnan Mehonic;Sébastien Cueff;Maciej Wojdak;Stephen Hudziak

  • Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

    Adnan Mehonic;Mark Buckwell;Luca Montesi;Leon Garnett

  • Losses in luminescent solar concentrators unveiled

    C. Tummeltshammer;A. Taylor;A.J. Kenyon;I. Papakonstantinou

  • Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

    O. Jambois;Fabrice Gourbilleau;A. J. Kenyon;J. Montserrat

  • Resistive switching in silicon sub-oxide films

    A Mehonic;S Cueff;M Wojdak;S Hudziak

Frequent Co-Authors

Alexander L. Shluger
Alexander L. Shluger University College London
Michel Bosman
Michel Bosman National University of Singapore
Ivan P. Parkin
Ivan P. Parkin University College London
Nina F. Thornhill
Nina F. Thornhill Imperial College London
Peter Horak
Peter Horak University of Southampton
Huiyun Liu
Huiyun Liu University College London
Ilia Valov
Ilia Valov RWTH Aachen University
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Yuchao Yang
Yuchao Yang Peking University

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