D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 32 Citations 5,683 251 World Ranking 6676 National Ranking 427

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Optics

Anthony J. Kenyon mainly focuses on Silicon, Optoelectronics, Resistive random-access memory, Silicon oxide and Nanotechnology. The concepts of his Silicon study are interwoven with issues in Oscillator strength, Quantum dot, Atomic physics and Photoluminescence, Analytical chemistry. Particularly relevant to Doping is his body of work in Optoelectronics.

The various areas that Anthony J. Kenyon examines in his Resistive random-access memory study include Conductance and Electronic engineering, Memristor. His Silicon oxide study combines topics in areas such as Non-volatile memory, Material system, Quantum tunnelling and Crossbar switch. His research integrates issues of Suboxide, Fluorescence and Physical chemistry in his study of Nanotechnology.

His most cited work include:

  • Recent developments in rare-earth doped materials for optoelectronics (665 citations)
  • Erbium in silicon (201 citations)
  • OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS (196 citations)

What are the main themes of his work throughout his whole career to date?

Anthony J. Kenyon mainly investigates Silicon, Optoelectronics, Engineering physics, Nanotechnology and Resistive random-access memory. His work deals with themes such as Doping, Erbium, Nanoclusters, Luminescence and Photoluminescence, which intersect with Silicon. As part of the same scientific family, Anthony J. Kenyon usually focuses on Photoluminescence, concentrating on Thin film and intersecting with Chemical vapor deposition.

As a member of one scientific family, Anthony J. Kenyon mostly works in the field of Optoelectronics, focusing on Oxide and, on occasion, Electrical conductor. His Engineering physics research incorporates elements of Silicon oxide and Resistive switching. The Resistive random-access memory study combines topics in areas such as Conductance, Neuromorphic engineering and Memristor.

He most often published in these fields:

  • Silicon (31.77%)
  • Optoelectronics (30.32%)
  • Engineering physics (25.99%)

What were the highlights of his more recent work (between 2015-2021)?

  • Resistive random-access memory (17.33%)
  • Optoelectronics (30.32%)
  • Engineering physics (25.99%)

In recent papers he was focusing on the following fields of study:

Anthony J. Kenyon spends much of his time researching Resistive random-access memory, Optoelectronics, Engineering physics, Nanotechnology and Neuromorphic engineering. His Resistive random-access memory research is multidisciplinary, incorporating elements of Nanosecond, Electronic engineering, Memristor and Filamentation. His work in the fields of Optoelectronics, such as Suboxide and Silicon, overlaps with other areas such as Conductive atomic force microscopy.

His Engineering physics research focuses on subjects like Silicon oxide, which are linked to Oxide. His study in the fields of Nanoscopic scale and Nanopillar under the domain of Nanotechnology overlaps with other disciplines such as Hydrogen silsesquioxane. His studies deal with areas such as Non-volatile memory and Spiking neural network as well as Neuromorphic engineering.

Between 2015 and 2021, his most popular works were:

  • Recommended Methods to Study Resistive Switching Devices (160 citations)
  • Silicon Oxide (SiOx ): A Promising Material for Resistance Switching? (73 citations)
  • Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell. (64 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Optics

His primary areas of investigation include Resistive random-access memory, Neuromorphic engineering, Optoelectronics, Electronic engineering and Nanotechnology. His Resistive random-access memory research is multidisciplinary, relying on both Memristor, Silicon oxide, Vacancy defect and Reliability. His Silicon oxide research includes elements of Oxide, Amorphous silicon, Silicon and Photoconductivity.

His Optoelectronics research integrates issues from Electroforming, Solar energy, Fluorophore, Quantum yield and Microstructure. His study looks at the relationship between Solar energy and fields such as Doping, as well as how they intersect with chemical problems. His Nanoscopic scale study, which is part of a larger body of work in Nanotechnology, is frequently linked to Sources of error, Trinitrotoluene, Sensitivity and Pentaerythritol tetranitrate, bridging the gap between disciplines.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Recent developments in rare-earth doped materials for optoelectronics

A.J Kenyon.
Progress in Quantum Electronics (2002)

988 Citations

Recommended Methods to Study Resistive Switching Devices

Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)

363 Citations

Erbium in silicon

A J Kenyon.
Semiconductor Science and Technology (2005)

346 Citations

OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS

A J Kenyon;P F Trwoga;M Federighi;C W Pitt.
Journal of Physics: Condensed Matter (1994)

306 Citations

Resistive switching in silicon suboxide films

Adnan Mehonic;Sébastien Cueff;Maciej Wojdak;Stephen Hudziak.
Journal of Applied Physics (2012)

262 Citations

Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters

P. F. Trwoga;A. J. Kenyon;C. W. Pitt.
Journal of Applied Physics (1998)

260 Citations

Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms

A. J. Kenyon;C. E. Chryssou;C. W. Pitt;T. Shimizu-Iwayama.
Journal of Applied Physics (2002)

247 Citations

Committee machines-a universal method to deal with non-idealities in memristor-based neural networks.

D. Joksas;P. Freitas;Z. Chai;W. H. Ng.
Nature Communications (2020)

200 Citations

Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films

C. E. Chryssou;A. J. Kenyon;T. S. Iwayama;C. W. Pitt.
Applied Physics Letters (1999)

197 Citations

Quantum Conductance in Silicon Oxide Resistive Memory Devices

Adnan Mehonic;A Vrajitoarea;S Cueff;S Cueff;S Hudziak.
Scientific Reports (2013)

171 Citations

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