World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
39
Citations
8767
World Ranking
7552
National Ranking
470

Anthony J. Kenyon publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Anthony J. Kenyon sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 278 publications — 71st percentile

71% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Anthony J. Kenyon D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Anthony J. Kenyon sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 39 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Anthony J. Kenyon is affiliated with University College London in the United Kingdom. Their research spans multiple disciplines within engineering and computer science with a focus on areas such as advanced memory and neural computing, and semiconductor materials.

Their work is distributed across several main fields of study:

  • Engineering
  • Computer Science

Within these fields, their subfields of specialization include:

  • Electrical and Electronic Engineering
  • Artificial Intelligence
  • Cellular and Molecular Neuroscience
  • Computer Networks and Communications
  • Materials Chemistry

The primary research topics they have contributed to cover:

  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neuroscience and Neural Engineering
  • Semiconductor materials and devices
  • CCD and CMOS Imaging Sensors
  • Neural Networks and Reservoir Computing
  • Neural dynamics and brain function

Anthony J. Kenyon has coauthored papers with frequently collaborating researchers including Adnan Mehonić, Wing H. Ng, Daniel J. Mannion, Mark Buckwell, and Dovydas Joksas.

Their publications appear in a range of venues, with multiple contributions to:

  • arXiv (Cornell University)
  • Advanced Intelligent Systems
  • APL Materials
  • Zenodo (CERN European Organization for Nuclear Research)
  • Nature

Recent representative papers encompass the following:

  • Brain-inspired computing needs a master plan, 2022, Nature
  • Hardware implementation of memristor-based artificial neural networks, 2024, Nature Communications
  • Memristors-From In-Memory Computing, Deep Learning Acceleration, and Spiking Neural Networks to the Future of Neuromorphic and Bio-Inspired Computing, 2020, Advanced Intelligent Systems
  • Standards for the Characterization of Endurance in Resistive Switching Devices, 2021, ACS Nano
  • Complementary Metal-Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing, 2020, Advanced Intelligent Systems

Best Publications

  • Recent developments in rare-earth doped materials for optoelectronics

    A.J Kenyon

  • Brain-inspired computing needs a master plan

    Unknown

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • Erbium in silicon

    A J Kenyon

  • OPTICAL-PROPERTIES OF PECVD ERBIUM-DOPED SILICON-RICH SILICA - EVIDENCE FOR ENERGY-TRANSFER BETWEEN SILICON MICROCLUSTERS AND ERBIUM IONS

    A J Kenyon;P F Trwoga;M Federighi;C W Pitt

  • Committee machines-a universal method to deal with non-idealities in memristor-based neural networks.

    D. Joksas;P. Freitas;Z. Chai;W. H. Ng

  • Resistive switching in silicon suboxide films

    Adnan Mehonic;Sébastien Cueff;Maciej Wojdak;Stephen Hudziak

  • Memristors - from In-memory computing, Deep Learning Acceleration, Spiking Neural Networks, to the Future of Neuromorphic and Bio-inspired Computing.

    Adnan Mehonic;Abu Sebastian;Bipin Rajendran;Osvaldo Simeone

  • The origin of photoluminescence from thin films of silicon-rich silica

    A. J. Kenyon;P. F. Trwoga;C. W. Pitt;G. Rehm

  • Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters

    P. F. Trwoga;A. J. Kenyon;C. W. Pitt

  • Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms

    A. J. Kenyon;C. E. Chryssou;C. W. Pitt;T. Shimizu-Iwayama

  • Standards for the Characterization of Endurance in Resistive Switching Devices.

    Mario Lanza;Rainer Waser;Rainer Waser;Daniele Ielmini;J. Joshua Yang

  • Quantum Conductance in Silicon Oxide Resistive Memory Devices

    Adnan Mehonic;A Vrajitoarea;S Cueff;S Cueff;S Hudziak

  • Silicon Oxide (SiOx ): A Promising Material for Resistance Switching?

    Adnan Mehonic;Alexander L. Shluger;David Gao;Ilia Valov

  • Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films

    C. E. Chryssou;A. J. Kenyon;T. S. Iwayama;C. W. Pitt

  • Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell.

    Adnan Mehonic;Anthony J. Kenyon

  • Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

    Mostafa Rahimi Azghadi;Ying-Chen Chen;Jason K. Eshraghian;Jia Chen

  • Electrically tailored resistance switching in silicon oxide.

    Adnan Mehonic;Sébastien Cueff;Maciej Wojdak;Stephen Hudziak

  • Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory

    Adnan Mehonic;Mark Buckwell;Luca Montesi;Leon Garnett

  • Losses in luminescent solar concentrators unveiled

    C. Tummeltshammer;A. Taylor;A.J. Kenyon;I. Papakonstantinou

  • Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters

    O. Jambois;Fabrice Gourbilleau;A. J. Kenyon;J. Montserrat

  • Resistive switching in silicon sub-oxide films

    A Mehonic;S Cueff;M Wojdak;S Hudziak

Frequent Co-Authors

Alexander L. Shluger
Alexander L. Shluger University College London
Michel Bosman
Michel Bosman National University of Singapore
Ivan P. Parkin
Ivan P. Parkin University College London
Nina F. Thornhill
Nina F. Thornhill Imperial College London
Peter Horak
Peter Horak University of Southampton
Huiyun Liu
Huiyun Liu University College London
Ilia Valov
Ilia Valov RWTH Aachen University
Daniele Ielmini
Daniele Ielmini Polytechnic University of Milan
Enrique Miranda
Enrique Miranda Autonomous University of Barcelona
Yuchao Yang
Yuchao Yang Peking University

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