World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
56
Citations
11444
World Ranking
8247
National Ranking
2391

Kaiyou Wang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kaiyou Wang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 203 publications — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kaiyou Wang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kaiyou Wang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Kaiyou Wang is affiliated with the Chinese Academy of Sciences in China. The current scope of their research work and academic contributions is specialized within this institution, reflecting the focus of one of the leading scientific organizations in the country.

There are no recorded recent papers, co-authors, or frequent publication venues associated with Kaiyou Wang at this time. Likewise, there is no available information about book publications or specific fields and subfields of study documented for their profile.

Similarly, no main topics of work or awards have been registered. This limits the available details regarding the scientist's academic footprint or recognition within scientific communities.

Despite the limited data, it can be observed that the affiliation itself situates Kaiyou Wang within an important national context for scientific research, which may suggest ongoing or future contributions that may not yet be publicly documented.

Best Publications

  • Mn interstitial diffusion in (ga,mn)as.

    K. W. Edmonds;P. Bogusławski;P. Bogusławski;K. Y. Wang;R. P. Campion

  • Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

    T. Jungwirth;K. Y. Wang;J. Mašek;K. W. Edmonds

  • Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure.

    Kaiming Cai;Meiyin Yang;Hailang Ju;Sumei Wang

  • High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing

    K. W. Edmonds;K. Y. Wang;R. P. Campion;A. C. Neumann

  • Catalytic chemical vapor deposition of single-wall carbon nanotubes at low temperatures.

    Mirco Cantoro;Stephan Hofmann;Simone Pisana;Vittorio Scardaci

  • High Curie temperature GaMnAs obtained by resistance-monitored annealing

    K.W. Edmonds;K.Y. Wang;R.P. Campion;A.C. Neumann

  • Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure

    Kaiming Cai;Meiyin Yang;Hailang Ju;Kevin William Edmonds

  • High-Performance, Self-Driven Photodetector Based on Graphene Sandwiched GaSe/WS2 Heterojunction

    Quanshan Lv;Faguang Yan;Xia Wei;Kaiyou Wang

  • Preparation and photoluminescence properties of amorphous silica nanowires

    X.C. Wu;W.H. Song;K.Y. Wang;T. Hu

  • In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films

    M. Sawicki;K.-Y. Wang;K. W. Edmonds;R. P. Campion

  • Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • Gate Tuning of High‐Performance InSe‐Based Photodetectors Using Graphene Electrodes

    Wengang Luo;Yufei Cao;Pingan Hu;Kaiming Cai

  • Toward High-Performance Photodetectors Based on 2D Materials: Strategy on Methods

    Faguang Yan;Zhongming Wei;Xia Wei;Quanshan Lv

  • Spin reorientation transition in single-domain (Ga, Mn)As

    K.-Y. Wang;M. Sawicki;K. W. Edmonds;R. P. Campion

  • Fast gate-tunable photodetection in the graphene sandwiched WSe2/GaSe heterojunctions

    Xia Wei;Faguang Yan;Quanshan Lv;Chao Shen

  • Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions

    Unknown

  • Deterministic Magnetization Switching Using Lateral Spin–Orbit Torque

    Yi Cao;Yu Sheng;Kevin William Edmonds;Yang Ji

  • Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • Spin-Valve Effect in Fe3GeTe2/MoS2/Fe3GeTe2 van der Waals Heterostructures

    Hailong Lin;Faguang Yan;Ce Hu;Quanshan Lv

  • Hall effect and hole densities in Ga1−xMnxAs

    K. W. Edmonds;K. Y. Wang;R. P. Campion;A. C. Neumann

  • Coulomb blockade anisotropic magnetoresistance effect in a (Ga,Mn)As single-electron transistor.

    J. Wunderlich;T. Jungwirth;B. Kaestner;A. C. Irvine

  • Tuning a Binary Ferromagnet into a Multistate Synapse with Spin–Orbit‐Torque‐Induced Plasticity

    Yi Cao;AndrewW. Rushforth;Yu Sheng;Houzhi Zheng

  • In-plane uniaxial anisotropy rotations in (Ga,Mn)As thin films

    M. Sawicki;K.-Y. Wang;K.W. Edmonds;R.P. Campion

Frequent Co-Authors

K. W. Edmonds
K. W. Edmonds University of Nottingham
R. P. Campion
R. P. Campion University of Nottingham
Tomasz Dietl
Tomasz Dietl Tohoku University
C.T. Foxon
C.T. Foxon University of Nottingham
Amalia Patanè
Amalia Patanè University of Nottingham
Zhongming Wei
Zhongming Wei Chinese Academy of Sciences
PingAn Hu
PingAn Hu Harbin Institute of Technology
Tomas Jungwirth
Tomas Jungwirth Czech Academy of Sciences
Jairo Sinova
Jairo Sinova Johannes Gutenberg University of Mainz
Dapeng Yu
Dapeng Yu Peking University

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