World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
74
Citations
17606
World Ranking
3692
National Ranking
1180

PingAn Hu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where PingAn Hu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 217 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

PingAn Hu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where PingAn Hu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 74 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

PingAn Hu is affiliated with the Harbin Institute of Technology in China. Their research primarily spans the fields of engineering and materials science, with significant contributions to materials chemistry, electrical and electronic engineering, and biomedical engineering. Their work also intersects with renewable energy, sustainability and the environment, and electronic, optical, and magnetic materials.

The scientist's research topics include:

  • 2D Materials and Applications
  • Advanced Sensor and Energy Harvesting Materials
  • Perovskite Materials and Applications
  • Graphene Research and Applications
  • MXene and MAX Phase Materials
  • Fuel Cells and Related Materials
  • Advanced Memory and Neural Computing

Frequently publishing in multiple venues, PingAn Hu has contributed extensively to journals such as:

  • SSRN Electronic Journal
  • Chemical Engineering Journal
  • ACS Applied Materials & Interfaces
  • Advanced Functional Materials
  • Advanced Optical Materials

Their recent notable papers include:

  • "Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts," 2020, ACS Nano
  • "In Situ Porousized MoS2 Nano Islands Enhance HER/OER Bifunctional Electrocatalysis," 2023, Small
  • "Atomically Thin Hexagonal Boron Nitride and Its Heterostructures," 2020, Advanced Materials
  • "High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets," 2022, ACS Applied Materials & Interfaces
  • "Anti-freezing dual-network hydrogels with high-strength, self-adhesive and strain-sensitive for flexible sensors," 2022, Carbohydrate Polymers

Collaborations with other researchers feature frequently in their work. The top co-authors include:

  • Jia Zhang
  • Yunxia Hu
  • Feng Gao
  • Wei Feng
  • Ce Wang

Best Publications

  • Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

    PingAn Hu;Zhenzhong Wen;Lifeng Wang;Pingheng Tan

  • Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates

    PingAn Hu;Lifeng Wang;Mina Yoon;Jia Zhang

  • Advances in designs and mechanisms of semiconducting metal oxide nanostructures for high-precision gas sensors operated at room temperature

    Zhijie Li;Hao Li;Zhonglin Wu;Mingkui Wang

  • Intrinsic Two-Dimensional Ferroelectricity with Dipole Locking.

    Jun Xiao;Hanyu Zhu;Ying Wang;Wei Feng

  • Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface.

    Wei Feng;Wei Zheng;Wenwu Cao;Wenwu Cao;PingAn Hu

  • Beaded Cobalt Oxide Nanoparticles along Carbon Nanotubes: Towards More Highly Integrated Electronic Devices

    Lei Fu;Zhimin Liu;Yunqi Liu;Buxing Han

  • A Dual-Band Multilayer InSe Self-Powered Photodetector with High Performance Induced by Surface Plasmon Resonance and Asymmetric Schottky Junction

    Mingjin Dai;Hongyu Chen;Rui Feng;Wei Feng

  • Photoluminescence spectroscopy of carbon nanotube bundles: Evidence for exciton energy transfer

    P. H. Tan;A. G. Rozhin;T. Hasan;P. Hu

  • Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors

    Lifeng Wang;Lifeng Wang;Bin Wu;Jisi Chen;Hongtao Liu

  • Carrier control of MoS2 nanoflakes by functional self-assembled monolayers.

    Yang Li;Cheng-Yan Xu;PingAn Hu;Liang Zhen

  • Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response†

    Wei Feng;Jing Bin Wu;Xiaoli Li;Wei Zheng

  • Synthesis of two-dimensional β-Ga2O3 nanosheets for high-performance solar blind photodetectors

    Wei Feng;Xiaona Wang;Jia Zhang;Lifeng Wang

  • Moiré Phonons in Twisted Bilayer MoS 2

    Miao-Ling Lin;Qing-Hai Tan;Jiang-Bin Wu;Xiao-Shuang Chen

  • Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • Chemically and uniformly grafting carbon nanotubes onto carbon fibers by poly(amidoamine) for enhancing interfacial strength in carbon fiber composites

    Qingyu Peng;Xiaodong He;Yibin Li;Chao Wang

  • Gate Tuning of High‐Performance InSe‐Based Photodetectors Using Graphene Electrodes

    Wengang Luo;Yufei Cao;Pingan Hu;Kaiming Cai

  • Interfacial enhancement of carbon fiber composites by poly(amido amine) functionalization

    Qingyu Peng;Yibin Li;Xiaodong He;Hongzhen Lv

  • High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets.

    Unknown

  • Vertical 2D MoO2/MoSe2 Core–Shell Nanosheet Arrays as High-Performance Electrocatalysts for Hydrogen Evolution Reaction

    Xiaoshuang Chen;Guangbo Liu;Wei Zheng;Wei Feng

  • Ultrafast and Sensitive Self-Powered Photodetector Featuring Self-Limited Depletion Region and Fully Depleted Channel with van der Waals Contacts

    Mingjin Dai;Hongyu Chen;Fakun Wang;Mingsheng Long

  • Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap

    Pingan Hu;Jia Zhang;Mina Yoon;Xiao-Fen Qiao

  • Carbon Nanostructure-Based Field-Effect Transistors for Label-Free Chemical/Biological Sensors

    PingAn Hu;Jia Zhang;Le Li;Zhenlong Wang

Frequent Co-Authors

Wenwu Cao
Wenwu Cao Pennsylvania State University
Yong Qing Fu
Yong Qing Fu Northumbria University
Yunqi Liu
Yunqi Liu Fudan University
Daoben Zhu
Daoben Zhu Chinese Academy of Sciences
Gui Yu
Gui Yu Chinese Academy of Sciences
Kai Xiao
Kai Xiao Oak Ridge National Laboratory
Lei Fu
Lei Fu Wuhan University
Yu Zhou
Yu Zhou Harbin Institute of Technology
Wenping Hu
Wenping Hu Tianjin University
Bin Yang
Bin Yang Kunming University of Science and Technology

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