World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
76
Citations
20272
World Ranking
3295
National Ranking
923

Kai Xiao publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kai Xiao sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 260 publications — 50th percentile

50% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kai Xiao D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kai Xiao sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 76 D-Index — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Kai Xiao is affiliated with Oak Ridge National Laboratory in the United States and has contributed extensively to the field of engineering. Their research spans several subfields including Electrical and Electronic Engineering, Biomedical Engineering, Materials Chemistry, Renewable Energy, Sustainability and the Environment, and Cellular and Molecular Neuroscience.

Their primary areas of investigation cover advanced themes such as Advanced Memory and Neural Computing, Nanopore and Nanochannel Transport Studies, Advanced Photocatalysis Techniques, Conducting Polymers and Applications, Fuel Cells and Related Materials, Neuroscience and Neural Engineering, and Advanced Biosensing and Bioanalysis Techniques.

Frequent coauthors collaborating with Kai Xiao include:

  • Guoheng Xu (14 publications)
  • Tingting Mei (13 publications)
  • Wenchao Liu (10 publications)
  • Jing Wan (9 publications)
  • Lei Jiang (7 publications)

Their work has appeared in several scientific venues frequently, notably:

  • ACS Nano (6 publications)
  • Advanced Materials (3 publications)
  • Angewandte Chemie International Edition (3 publications)
  • Chemical Engineering Journal (3 publications)
  • IEEE Electron Device Letters (3 publications)

Selected recent papers authored by Kai Xiao include:

  • "Bioinspired Ionic Sensory Systems: The Successor of Electronics," 2020, Advanced Materials

Other related notable publications in their field, authored by collaborators or in overlapping research areas, include:

  • "Ultrathin 2D Graphitic Carbon Nitride on Metal Films: Underpotential Sodium Deposition in Adlayers for Sodium-Ion Batteries," 2020, Angewandte Chemie International Edition
  • "Graphitic Carbon Nitride Films: Emerging Paradigm for Versatile Applications," 2020, ACS Applied Materials & Interfaces
  • "Enhanced Organic Photocatalysis in Confined Flow through a Carbon Nitride Nanotube Membrane with Conversions in the Millisecond Regime," 2021, ACS Nano
  • "Improving Artificial Photosynthesis over Carbon Nitride by Gas-Liquid-Solid Interface Management for Full Light-Induced CO2 Reduction to C1 and C2 Fuels and O2," 2020, ChemSusChem

Best Publications

  • Atomic Defects in Monolayer Titanium Carbide (Ti3C2Tx) MXene

    Xiahan Sang;Yu Xie;Ming Wei Lin;Mohamed Alhabeb

  • Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors

    PingAn Hu;Zhenzhong Wen;Lifeng Wang;Pingheng Tan

  • Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates

    PingAn Hu;Lifeng Wang;Mina Yoon;Jia Zhang

  • PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.

    Akinola D. Oyedele;Shize Yang;Liangbo Liang;Alexander A. Puretzky

  • 2D materials advances: From large scale synthesis and controlled heterostructures to improved characterization techniques, defects and applications

    Zhong Lin;Amber McCreary;Natalie Briggs;Shruti Subramanian

  • A highly π-stacked organic semiconductor for field-effect transistors based on linearly condensed pentathienoacene

    Kai Xiao;Yunqi Liu;Ting Qi;Wei Zhang

  • Deep Learning of Atomically Resolved Scanning Transmission Electron Microscopy Images: Chemical Identification and Tracking Local Transformations.

    Maxim Ziatdinov;Ondrej Dyck;Artem Maksov;Xufan Li

  • Aromatic polythiourea dielectrics with ultrahigh breakdown field strength, low dielectric loss, and high electric energy density.

    Shan Wu;Weiping Li;Minren Lin;Quinn Burlingame

  • High-Performance Flexible Perovskite Solar Cells by Using a Combination of Ultrasonic Spray-Coating and Low Thermal Budget Photonic Curing

    Sanjib Das;Bin Yang;Gong Gu;Pooran C. Joshi

  • Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy

    Kai Wang;Bing Huang;Bing Huang;Mengkun Tian;Frank Ceballos

  • Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse

    Xufan Li;Ming Wei Lin;Alexander A. Puretzky;Juan C. Idrobo

  • Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

    Xufan Li;Ming-Wei Lin;Junhao Lin;Bing Huang

  • Perovskite Solar Cells with Near 100% Internal Quantum Efficiency Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions

    Bin Yang;Ondrej Dyck;Jonathan Poplawsky;Jong Keum

  • Ultrathin nanosheets of CrSiTe3: a semiconducting two-dimensional ferromagnetic material

    Ming Wei Lin;Houlong L. Zhuang;Jiaqiang Yan;Jiaqiang Yan;Thomas Zac Ward

  • A roadmap for electronic grade 2D materials

    Natalie Briggs;Shruti Subramanian;Zhong Lin;Xufan Li;Xufan Li

  • Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors.

    Masoud Mahjouri-Samani;Ming-Wei Lin;Kai Wang;Andrew R. Lupini

  • Strong spin-lattice coupling in CrSiTe3

    L. D. Casto;A. J. Clune;M. O. Yokosuk;J. L. Musfeldt

  • Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures

    Yu-Chuan Lin;Chenze Liu;Yiling Yu;Eva Zarkadoula

  • Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response†

    Wei Feng;Jing Bin Wu;Xiaoli Li;Wei Zheng

  • Chemical nature of ferroelastic twin domains in CH3NH3PbI3 perovskite.

    Yongtao Liu;Yongtao Liu;Liam Collins;Roger Proksch;Songkil Kim;Songkil Kim

  • High‐Performance and Stable Organic Thin‐Film Transistors Based on Fused Thiophenes

    Y. M. Sun;Y. Q. Ma;Y. Q. Liu;Y. Y. Lin

  • White Light-Emitting Diodes Based on Ultrasmall CdSe Nanocrystal Electroluminescence

    Michael A. Schreuder;Kai Xiao;Ilia N. Ivanov;Sharon M. Weiss

Frequent Co-Authors

David B. Geohegan
David B. Geohegan Oak Ridge National Laboratory
Alexander A. Puretzky
Alexander A. Puretzky Oak Ridge National Laboratory
Christopher M. Rouleau
Christopher M. Rouleau Oak Ridge National Laboratory
Bobby G. Sumpter
Bobby G. Sumpter Oak Ridge National Laboratory
Ilia N. Ivanov
Ilia N. Ivanov Oak Ridge National Laboratory
Gerd Duscher
Gerd Duscher University of Tennessee at Knoxville
Mina Yoon
Mina Yoon Oak Ridge National Laboratory
Liangbo Liang
Liangbo Liang Oak Ridge National Laboratory
Philip D. Rack
Philip D. Rack University of Tennessee at Knoxville
Stephen Jesse
Stephen Jesse Oak Ridge National Laboratory

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