World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
80
Citations
20383
World Ranking
2729
National Ranking
769

Alexander A. Puretzky publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Alexander A. Puretzky sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 372 publications — 74th percentile

74% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Alexander A. Puretzky D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Alexander A. Puretzky sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 80 D-Index — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Alexander A. Puretzky is affiliated with the Oak Ridge National Laboratory in the United States. Their research primarily focuses on materials science and engineering, with a significant concentration on materials chemistry and electrical and electronic engineering. The scientist's work extends into subfields such as atomic and molecular physics, optics, biomedical engineering, and electronic, optical, and magnetic materials.

The main topics in Puretzky's research include 2D materials and applications, MXene and MAX phase materials, graphene research and applications, perovskite materials and applications, quantum dots synthesis and properties, chalcogenide semiconductor thin films, and topological materials and phenomena.

Frequent co-authors collaborating with Puretzky include David B. Geohegan, Kai Xiao, Liangbo Liang, Christopher M. Rouleau, and Yiling Yu.

Alexander A. Puretzky has published multiple papers in notable scientific venues. These include:

  • Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures, 2020, ACS Nano
  • Excitonic Dynamics in Janus MoSSe and WSSe Monolayers, 2021, Nano Letters
  • Enhancement of van der Waals Interlayer Coupling through Polar Janus MoSSe, 2020, Journal of the American Chemical Society
  • Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition, 2020, Advanced Materials
  • Piezoelectric domain walls in van der Waals antiferroelectric CuInP2Se6, 2020, Nature Communications

These publications have appeared frequently in venues such as ACS Nano, Advanced Materials, arXiv (Cornell University), Nano Letters, and Nature Communications.

Best Publications

  • Synthesis of Novel Thin-Film Materials by Pulsed Laser Deposition

    Douglas H. Lowndes;D. B. Geohegan;A. A. Puretzky;D. P. Norton

  • PdSe2: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics.

    Akinola D. Oyedele;Shize Yang;Liangbo Liang;Alexander A. Puretzky

  • Nonlinear Fano-Resonant Dielectric Metasurfaces.

    Yuanmu Yang;Wenyi Wang;Abdelaziz Boulesbaa;Ivan I. Kravchenko

  • Time-resolved imaging of gas phase nanoparticle synthesis by laser ablation

    David B. Geohegan;Alex A. Puretzky;Gerd Duscher;Stephen J. Pennycook

  • In situ measurements and modeling of carbon nanotube array growth kinetics during chemical vapor deposition

    Alexander A Puretzky;Alexander A Puretzky;David B Geohegan;Stephen Jesse;Ilia N Ivanov;Ilia N Ivanov

  • Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus

    Xi Ling;Shengxi Huang;Eddwi H. Hasdeo;Liangbo Liang

  • Two-channel model for ultralow thermal conductivity of crystalline Tl3VSe4.

    Saikat Mukhopadhyay;Saikat Mukhopadhyay;David S. Parker;Brian C. Sales;Alexander A. Puretzky

  • Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy

    Kai Wang;Bing Huang;Bing Huang;Mengkun Tian;Frank Ceballos

  • Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse

    Xufan Li;Ming Wei Lin;Alexander A. Puretzky;Juan C. Idrobo

  • Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

    Xufan Li;Ming-Wei Lin;Junhao Lin;Bing Huang

  • Perovskite Solar Cells with Near 100% Internal Quantum Efficiency Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions

    Bin Yang;Ondrej Dyck;Jonathan Poplawsky;Jong Keum

  • Ultrathin nanosheets of CrSiTe3: a semiconducting two-dimensional ferromagnetic material

    Ming Wei Lin;Houlong L. Zhuang;Jiaqiang Yan;Jiaqiang Yan;Thomas Zac Ward

  • Dynamics of laser ablation plume penetration through low pressure background gases

    David B. Geohegan;Alexander A. Puretzky

  • Patterned arrays of lateral heterojunctions within monolayer two-dimensional semiconductors.

    Masoud Mahjouri-Samani;Ming-Wei Lin;Kai Wang;Andrew R. Lupini

  • Interaction of carbon nanohorns with plants: Uptake and biological effects

    Mohamed H. Lahiani;Jihua Chen;Fahmida Irin;Alexander A. Puretzky

  • Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures

    Yu-Chuan Lin;Chenze Liu;Yiling Yu;Eva Zarkadoula

  • Dynamics of single-wall carbon nanotube synthesis by laser vaporization

    A.A. Puretzky;D.B. Geohegan;X. Fan;S.J. Pennycook

  • In-Plane Optical Anisotropy of Layered Gallium Telluride

    Shengxi Huang;Yuki Tatsumi;Xi Ling;Huaihong Guo

  • Low-Frequency Interlayer Raman Modes to Probe Interface of Twisted Bilayer MoS2

    Shengxi Huang;Liangbo Liang;Xi Ling;Alexander A. Puretzky

  • Dynamics of Plume Propagation and Splitting during Pulsed-Laser Ablation

    R. F. Wood;Kuan-Ren Chen;J. N. Leboeuf;A. A. Puretzky

  • Low-Frequency Interlayer Breathing Modes in Few-Layer Black Phosphorus

    Xi Ling;Liangbo Liang;Shengxi Huang;Alexander A. Puretzky

Frequent Co-Authors

David B. Geohegan
David B. Geohegan Oak Ridge National Laboratory
Christopher M. Rouleau
Christopher M. Rouleau Oak Ridge National Laboratory
Kai Xiao
Kai Xiao Oak Ridge National Laboratory
Ilia N. Ivanov
Ilia N. Ivanov Oak Ridge National Laboratory
Gyula Eres
Gyula Eres Oak Ridge National Laboratory
Gerd Duscher
Gerd Duscher University of Tennessee at Knoxville
Liangbo Liang
Liangbo Liang Oak Ridge National Laboratory
Bobby G. Sumpter
Bobby G. Sumpter Oak Ridge National Laboratory
Mina Yoon
Mina Yoon Oak Ridge National Laboratory
Douglas H. Lowndes
Douglas H. Lowndes Oak Ridge National Laboratory

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