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D-Index & Metrics

Materials Science

D-Index
53
Citations
9398
World Ranking
9287
National Ranking
2250

Gerd Duscher publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gerd Duscher sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 724 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 478 scientists 350–369 publications: 441 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 257 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 306 publications — 61st percentile

61% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gerd Duscher D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gerd Duscher sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 451 scientists 44–45 D-Index: 613 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 204 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 118 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 53 D-Index — 30th percentile

30% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Gerd Duscher is affiliated with the University of Tennessee at Knoxville in the United States. Their research primarily spans the fields of Materials Science and Engineering, with a focus on subfields such as Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Electronic, Optical and Magnetic Materials, and Surfaces, Coatings and Films.

Their work covers several main topics, including:

  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Machine Learning in Materials Science
  • Electronic and Structural Properties of Oxides
  • Quantum Dots Synthesis And Properties
  • Graphene research and applications
  • Electron and X-Ray Spectroscopy Techniques

Duscher's recent publications demonstrate their engagement with advanced materials and nanoscale structures. Selected papers include:

  • "Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures," 2020, published in ACS Nano
  • "Excitonic Dynamics in Janus MoSSe and WSSe Monolayers," 2021, published in Nano Letters
  • "Two-Dimensional Palladium Diselenide with Strong In-Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition," 2020, published in Advanced Materials
  • "Effect of interstitial oxygen and nitrogen on incipient plasticity of NbTiZrHf high-entropy alloys," 2020, published in Acta Materialia
  • "Non-Equilibrium Synthesis of Highly Active Nanostructured, Oxygen-Incorporated Amorphous Molybdenum Sulfide HER Electrocatalyst," 2020, published in Small

Their frequent co-authors include David B. Geohegan, Austin Houston, Chenze Liu, Kai Xiao, and Utkarsh Pratiush, indicating collaborative work across multiple projects and disciplines.

Duscher's work is commonly published in venues such as:

  • Microscopy and Microanalysis
  • arXiv (Cornell University)
  • Advanced Materials
  • ACS Nano
  • Nano Letters

Best Publications

  • Time-resolved imaging of gas phase nanoparticle synthesis by laser ablation

    David B. Geohegan;Alex A. Puretzky;Gerd Duscher;Stephen J. Pennycook

  • Surface plasmon resonance in conducting metal oxides

    Crissy Rhodes;Stefan Franzen;Jon Paul Maria;Mark Losego

  • Void formation during early stages of passivation: Initial oxidation of iron nanoparticles at room temperature

    C. M. Wang;D. R. Baer;L. E. Thomas;J. E. Amonette

  • Bismuth-induced embrittlement of copper grain boundaries

    Gerd Duscher;Matthew F. Chisholm;Uwe Alber;Manfred Rühle

  • Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy

    Kai Wang;Bing Huang;Bing Huang;Mengkun Tian;Frank Ceballos

  • Perovskite Solar Cells with Near 100% Internal Quantum Efficiency Based on Large Single Crystalline Grains and Vertical Bulk Heterojunctions

    Bin Yang;Ondrej Dyck;Jonathan Poplawsky;Jong Keum

  • Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures

    Yu-Chuan Lin;Chenze Liu;Yiling Yu;Eva Zarkadoula

  • Synthesis of Millimeter-Size Hexagon-Shaped Graphene Single Crystals on Resolidified Copper

    Ali Mohsin;Lei Liu;Peizhi Liu;Wan Deng

  • Nonstoichiometry and the electrical activity of grain boundaries in SrTiO3.

    Miyoung Kim;Miyoung Kim;Gerd Duscher;Gerd Duscher;Nigel D. Browning;Karl Sohlberg

  • Transition layers at the SiO2∕SiC interface

    Tsvetanka Zheleva;Aivars Lelis;Gerd Duscher;Fude Liu

  • Structure and Formation Mechanism of Black TiO2 Nanoparticles

    Mengkun Tian;Masoud Mahjouri-Samani;Gyula Eres;Ritesh Sachan

  • Topological defects: origin of nanopores and enhanced adsorption performance in nanoporous carbon.

    Junjie Guo;Junjie Guo;James R. Morris;James R. Morris;Yungok Ihm;Cristian I. Contescu

  • Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2-x Crystals.

    Masoud Mahjouri-Samani;Liangbo Liang;Akinola Oyedele;Akinola Oyedele;Yong-Sung Kim;Yong-Sung Kim;Yong-Sung Kim

  • Universal Formation of Compositionally Graded Bulk Heterojunction for Efficiency Enhancement in Organic Photovoltaics

    Zhengguo Xiao;Yongbo Yuan;Bin Yang;Jeremy VanDerslice

  • Direct observation of dislocation dissociation and Suzuki segregation in a Mg–Zn–Y alloy by aberration-corrected scanning transmission electron microscopy

    Zhiqing Yang;Zhiqing Yang;Zhiqing Yang;Matthew F. Chisholm;Gerd Duscher;Gerd Duscher;Xiuliang Ma

  • Excitonic Dynamics in Janus MoSSe and WSSe Monolayers

    Ting Zheng;Ting Zheng;Yu-Chuan Lin;Yu-Chuan Lin;Yiling Yu;Pavel Valencia-Acuna

  • Photoluminescence from gas-suspended SiOx nanoparticles synthesized by laser ablation

    David B. Geohegan;Alex A. Puretzky;Gerd Duscher;Stephen J. Pennycook

  • Pulsed Laser Deposition of Photoresponsive Two‐Dimensional GaSe Nanosheet Networks

    Masoud Mahjouri-Samani;Ryan Gresback;Mengkun Tian;Kai Wang

  • Focused helium-ion beam irradiation effects on electrical transport properties of few-layer WSe2: enabling nanoscale direct write homo-junctions.

    Michael G. Stanford;Pushpa Raj Pudasaini;Alex Belianinov;Nicholas Cross

  • High-performance multilayer WSe 2 field-effect transistors with carrier type control

    Pushpa Raj Pudasaini;Pushpa Raj Pudasaini;Akinola Oyedele;Akinola Oyedele;Cheng Zhang;Cheng Zhang;Michael G. Stanford

  • Impurity-Induced Structural Transformation of a MgO Grain Boundary

    Y. Yan;M. F. Chisholm;G. Duscher;G. Duscher;A. Maiti;A. Maiti

  • LowEnergy Implantation into Transition-Metal DichalcogenideMonolayers to Form Janus Structures

    Yu-Chuan Lin;Chenze Liu;Yiling Yu;Eva Zarkadoula

  • Bismuth Induced Embrittlement of Copper Grain Boundaries

    M. F. Chisholm;G. Duscher

Frequent Co-Authors

David B. Geohegan
David B. Geohegan Oak Ridge National Laboratory
Alexander A. Puretzky
Alexander A. Puretzky Oak Ridge National Laboratory
Christopher M. Rouleau
Christopher M. Rouleau Oak Ridge National Laboratory
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Kai Xiao
Kai Xiao Oak Ridge National Laboratory
Stephen J. Pennycook
Stephen J. Pennycook University of Tennessee at Knoxville
Matthew F. Chisholm
Matthew F. Chisholm Oak Ridge National Laboratory
Philip D. Rack
Philip D. Rack University of Tennessee at Knoxville
Gyula Eres
Gyula Eres Oak Ridge National Laboratory
Nigel D. Browning
Nigel D. Browning University of Liverpool

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