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D-Index & Metrics

Materials Science

D-Index
46
Citations
9917
World Ranking
11342
National Ranking
466

Amalia Patanè publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Amalia Patanè sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 314 publications — 63rd percentile

63% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Amalia Patanè D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Amalia Patanè sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 46 D-Index — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Amalia Patanè is affiliated with the University of Nottingham in the United Kingdom. Their research predominantly spans the fields of Materials Science and Engineering, with significant contributions to subfields including Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The topics central to Patanè's work focus on advanced materials and their applications. Key areas include 2D Materials and Applications, Graphene research and applications, Perovskite Materials and Applications, Chalcogenide Semiconductor Thin Films, MXene and MAX Phase Materials, Topological Materials and Phenomena, as well as Advanced Thermoelectric Materials and Devices.

Frequent collaborators in Patanè's research include Z. R. Kudrynskyi, Z. D. Kovalyuk, O. Makarovsky, Nathan D. Cottam, and L. Eaves.

Their recent publications illustrate a strong engagement with graphene and van der Waals materials, among others. Representative papers include:

  • Production and processing of graphene and related materials, 2020, published in 2D Materials
  • Universal mobility characteristics of graphene originating from charge scattering by ionised impurities, 2021, Communications Physics
  • Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions, 2022, Chinese Physics Letters
  • Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions, 2021, Advanced Materials
  • Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors, 2020, Advanced Functional Materials

Patáne's research is published across multiple recognized venues, with several papers appearing in:

  • arXiv (Cornell University)
  • Advanced Functional Materials
  • 2D Materials
  • Communications Physics
  • Advanced Optical Materials

Best Publications

  • High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

    Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko

  • Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

    Garry W. Mudd;Simon A. Svatek;Tianhang Ren;Amalia Patanè

  • Production and processing of graphene and related materials

    Claudia Backes;Claudia Backes;Amr M Abdelkader;Concepción Alonso;Amandine Andrieux-Ledier

  • High Broad-Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

    Garry W. Mudd;Simon A. Svatek;Lee Hague;Oleg Makarovsky

  • Temperature dependence of the optical properties of InAs/Al y Ga 1-y As self-organized quantum dots

    A. Polimeni;A. Patane;M. Henini;L. Eaves

  • Imaging the electron wave function in self-assembled quantum dots.

    E. E. Vdovin;A. Levin;A. Patanè;L. Eaves

  • Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

    G.W. Mudd;M.R. Molas;X. Chen;V. Zólyomi

  • Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions

    Unknown

  • Universal mobility characteristics of graphene originating from charge scattering by ionised impurities

    Jonathan H. Gosling;Oleg Makarovsky;Feiran Wang;Nathan D. Cottam

  • Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe

    Nilanthy Balakrishnan;Elisabeth D. Steer;Emily F. Smith;Zakhar R. Kudrynskyi

  • High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

    Lei Liu;Chao Yang;Amalia Patanè;Zhiguo Yu

  • Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

    Wenkai Zhu;Hailong Lin;Faguang Yan;Ce Hu

  • Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors

    Evgeny E. Vdovin;Evgeny E. Vdovin;A. Mishchenko;M.T. Greenaway;M.J. Zhu

  • Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy

    A. Patanè;R. J. A. Hill;L. Eaves;P. C. Main

  • Temperature dependence of the photoluminescence emission from thiol-capped PbS quantum dots

    L. Turyanska;A. Patanè;M. Henini;B. Hennequin

  • Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport

    Nilanthy Balakrishnan;Christopher R. Staddon;Emily F. Smith;Jakub Stec

  • Aqueous Near‐Infrared Fluorescent Composites Based on Apoferritin‐Encapsulated PbS Quantum Dots

    Barbara Hennequin;Lyudmila Turyanska;Teresa Ben;Ana M. Beltrán

  • Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

    Nilanthy Balakrishnan;Zakhar R. Kudrynskyi;Emily F. Smith;Michael W. Fay

  • Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor.

    N. V. Kozlova;N. Mori;O. Makarovsky;L. Eaves

  • Room Temperature Electroluminescence from Mechanically Formed van der Waals III–VI Homojunctions and Heterojunctions

    Nilanthy Balakrishnan;Zakhar R. Kudrynskyi;Michael W. Fay;Garry W. Mudd

  • Design of van der Waals interfaces for broad-spectrum optoelectronics.

    Nicolas Ubrig;Evgeniy Ponomarev;Johanna Zultak;Johanna Zultak;Daniil Domaretskiy

Frequent Co-Authors

Laurence Eaves
Laurence Eaves University of Nottingham
Mark Hopkinson
Mark Hopkinson University of Sheffield
R. P. Campion
R. P. Campion University of Nottingham
Vladimir I. Fal'ko
Vladimir I. Fal'ko University of Manchester
Peter H. Beton
Peter H. Beton University of Nottingham
Kaiyou Wang
Kaiyou Wang Chinese Academy of Sciences
Seigo Tarucha
Seigo Tarucha University of Tokyo
Roman Gorbachev
Roman Gorbachev University of Manchester
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Andre K. Geim
Andre K. Geim University of Manchester

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