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Materials Science

D-Index
46
Citations
9917
World Ranking
11344
National Ranking
466

Overview

Amalia Patanè is affiliated with the University of Nottingham in the United Kingdom. Their research predominantly spans the fields of Materials Science and Engineering, with significant contributions to subfields including Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Biomedical Engineering, and Electronic, Optical and Magnetic Materials.

The topics central to Patanè's work focus on advanced materials and their applications. Key areas include 2D Materials and Applications, Graphene research and applications, Perovskite Materials and Applications, Chalcogenide Semiconductor Thin Films, MXene and MAX Phase Materials, Topological Materials and Phenomena, as well as Advanced Thermoelectric Materials and Devices.

Frequent collaborators in Patanè's research include Z. R. Kudrynskyi, Z. D. Kovalyuk, O. Makarovsky, Nathan D. Cottam, and L. Eaves.

Their recent publications illustrate a strong engagement with graphene and van der Waals materials, among others. Representative papers include:

  • Production and processing of graphene and related materials, 2020, published in 2D Materials
  • Universal mobility characteristics of graphene originating from charge scattering by ionised impurities, 2021, Communications Physics
  • Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions, 2022, Chinese Physics Letters
  • Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions, 2021, Advanced Materials
  • Interlayer Band-to-Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field-Effect Transistors, 2020, Advanced Functional Materials

Patáne's research is published across multiple recognized venues, with several papers appearing in:

  • arXiv (Cornell University)
  • Advanced Functional Materials
  • 2D Materials
  • Communications Physics
  • Advanced Optical Materials

Best Publications

  • High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

    Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko

  • Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

    Garry W. Mudd;Simon A. Svatek;Tianhang Ren;Amalia Patanè

  • Production and processing of graphene and related materials

    Claudia Backes;Claudia Backes;Amr M Abdelkader;Concepción Alonso;Amandine Andrieux-Ledier

  • High Broad-Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

    Garry W. Mudd;Simon A. Svatek;Lee Hague;Oleg Makarovsky

  • Temperature dependence of the optical properties of InAs/Al y Ga 1-y As self-organized quantum dots

    A. Polimeni;A. Patane;M. Henini;L. Eaves

  • Imaging the electron wave function in self-assembled quantum dots.

    E. E. Vdovin;A. Levin;A. Patanè;L. Eaves

  • Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

    G.W. Mudd;M.R. Molas;X. Chen;V. Zólyomi

  • Large Room-Temperature Magnetoresistance in van der Waals Ferromagnet/Semiconductor Junctions

    Unknown

  • Universal mobility characteristics of graphene originating from charge scattering by ionised impurities

    Jonathan H. Gosling;Oleg Makarovsky;Feiran Wang;Nathan D. Cottam

  • Fast multicolor photodetectors based on graphene-contacted p-GaSe/n-InSe van der Waals heterostructures

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • Epitaxial growth of γ-InSe and α, β, and γ-In2Se3 on ε-GaSe

    Nilanthy Balakrishnan;Elisabeth D. Steer;Emily F. Smith;Zakhar R. Kudrynskyi

  • High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN

    Lei Liu;Chao Yang;Amalia Patanè;Zhiguo Yu

  • Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions.

    Wenkai Zhu;Hailong Lin;Faguang Yan;Ce Hu

  • Phonon-Assisted Resonant Tunneling of Electrons in Graphene-Boron Nitride Transistors

    Evgeny E. Vdovin;Evgeny E. Vdovin;A. Mishchenko;M.T. Greenaway;M.J. Zhu

  • Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy

    A. Patanè;R. J. A. Hill;L. Eaves;P. C. Main

  • Temperature dependence of the photoluminescence emission from thiol-capped PbS quantum dots

    L. Turyanska;A. Patanè;M. Henini;B. Hennequin

  • Quantum confinement and photoresponsivity of β-In2Se3 nanosheets grown by physical vapour transport

    Nilanthy Balakrishnan;Christopher R. Staddon;Emily F. Smith;Jakub Stec

  • Aqueous Near‐Infrared Fluorescent Composites Based on Apoferritin‐Encapsulated PbS Quantum Dots

    Barbara Hennequin;Lyudmila Turyanska;Teresa Ben;Ana M. Beltrán

  • Engineering p-n junctions and bandgap tuning of InSe nanolayers by controlled oxidation

    Nilanthy Balakrishnan;Zakhar R. Kudrynskyi;Emily F. Smith;Michael W. Fay

  • Linear magnetoresistance due to multiple-electron scattering by low-mobility islands in an inhomogeneous conductor.

    N. V. Kozlova;N. Mori;O. Makarovsky;L. Eaves

  • Room Temperature Electroluminescence from Mechanically Formed van der Waals III–VI Homojunctions and Heterojunctions

    Nilanthy Balakrishnan;Zakhar R. Kudrynskyi;Michael W. Fay;Garry W. Mudd

  • Design of van der Waals interfaces for broad-spectrum optoelectronics.

    Nicolas Ubrig;Evgeniy Ponomarev;Johanna Zultak;Johanna Zultak;Daniil Domaretskiy

Frequent Co-Authors

Laurence Eaves
Laurence Eaves University of Nottingham
Mark Hopkinson
Mark Hopkinson University of Sheffield
R. P. Campion
R. P. Campion University of Nottingham
Vladimir I. Fal'ko
Vladimir I. Fal'ko University of Manchester
Peter H. Beton
Peter H. Beton University of Nottingham
Kaiyou Wang
Kaiyou Wang Chinese Academy of Sciences
Seigo Tarucha
Seigo Tarucha University of Tokyo
Roman Gorbachev
Roman Gorbachev University of Manchester
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Andre K. Geim
Andre K. Geim University of Manchester

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