2026 Roman Gorbachev: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	66	5228	5058	208	195	152	34795

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

5228

5058

208

195

152

34795

Overview

Roman Gorbachev is a researcher affiliated with the University of Manchester in the United Kingdom. Their main field of study is Materials Science, with a focus on Materials Chemistry as well as subfields including Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Biomedical Engineering, and Structural Biology.

Their research interests encompass several key topics, notably:

Graphene research and applications
2D Materials and Applications
Quantum and electron transport phenomena
Electronic and Structural Properties of Oxides
Surface and Thin Film Phenomena
MXene and MAX Phase Materials
Topological Materials and Phenomena

Gorbachev has published extensively, with notable recent papers including:

Interfacial ferroelectricity in marginally twisted 2D semiconductors, 2022, Nature Nanotechnology
Tracking single adatoms in liquid in a transmission electron microscope, 2022, Nature
Clean assembly of van der Waals heterostructures using silicon nitride membranes, 2023, Nature Electronics
Control of electron-electron interaction in graphene by proximity screening, 2020, Nature Communications
Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers, 2020, Faraday Discussions

They have frequently collaborated with a number of coauthors, including:

Sarah J. Haigh
Nick Clark
Vladimir I. Fal'ko
Matthew J. Hamer
Kenji Watanabe

Gorbachev's publications frequently appear in journals and venues such as:

arXiv (Cornell University)
Nature Communications
Microscopy and Microanalysis
Nano Letters
Nature

Best Publications

Field-effect tunneling transistor based on vertical graphene heterostructures.

L. Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

2982
Citations
Strong light-matter interactions in heterostructures of atomically thin films.

Líam Britnell;R. M. Ribeiro;R. M. Ribeiro;A. Eckmann;R. Jalil

2852
Citations
Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics

Thanasis Georgiou;Rashid Jalil;Branson D Belle;Liam Britnell

1938
Citations
Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Alexander S. Mayorov;Roman V. Gorbachev;Sergey V. Morozov;Liam Britnell

1880
Citations
Cloning of Dirac fermions in graphene superlattices

L. A. Ponomarenko;R. V. Gorbachev;G. L. Yu;D. C. Elias

1461
Citations
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko

1326
Citations
Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices.

S. J. Haigh;A. Gholinia;R. Jalil;S. Romani

1096
Citations
Strong plasmonic enhancement of photovoltage in graphene

T J Echtermeyer;L Britnell;P K Jasnos;A Lombardo

1067
Citations
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Liam Britnell;Roman V. Gorbachev;Rashid Jalil;Branson D. Belle

1046
Citations
Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

Roman V. Gorbachev;Ibtsam Riaz;Rahul R. Nair;Rashid Jalil

1024
Citations
Dirac cones reshaped by interaction effects in suspended graphene

D. C. Elias;R. V. Gorbachev;A. S. Mayorov;S. V. Morozov

999
Citations
Commensurate-incommensurate transition in graphene on hexagonal boron nitride

Colin Woods;Liam Britnell;Axel Eckmann;R. S. Ma

981
Citations
Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures

Evgeny M. Alexeev;David A. Ruiz-Tijerina;David A. Ruiz-Tijerina;Mark Danovich;Matthew J. Hamer

861
Citations
Atomically thin boron nitride : a tunnelling barrier for graphene devices

Liam Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

820
Citations
Detecting topological currents in graphene superlattices

R V Gorbachev;J C W Song;J C W Song;G L Yu;Andrey Kretinin

769
Citations
Resonant tunnelling and negative differential conductance in graphene transistors

L. Britnell;R.V. Gorbachev;A.K. Geim;L.A. Ponomarenko

749
Citations
Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

A. V. Kretinin;Y. Cao;J. S. Tu;G. L. Yu

630
Citations
Tunable metal-insulator transition in double-layer graphene heterostructures

L. A. Ponomarenko;A. K. Geim;A. A. Zhukov;R. Jalil

612
Citations
Weak localization in graphene flakes.

F. V. Tikhonenko;D. W. Horsell;R. V. Gorbachev;A. K. Savchenko

541
Citations
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

A. Mishchenko;J. S. Tu;Yun Cao;Roman V Gorbachev

532
Citations
Dirac cones reshaped by interaction effects in suspended graphene (vol 7, pg 701, 2011)

D C Elias;Roman V Gorbachev;A S Mayorov;S V Morozov

25
Citations
Detecting topological currents in graphene superlattices

Geliang Yu;Andrey Kretinin;Justin Song;Roman Gorbachev

0
Citations