Roman Gorbachev publications per year

The chart shows the history of publications by Roman Gorbachev between 2005 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Roman Gorbachev published across 22 years, from 2005 to 2026, averaging 8.7 papers a year. Output peaked at 18 publications in 2020. 12 of the 192 publications appeared in the last two years.

No. of publications

5 10 15

2005 2026

192 publications in total across all disciplines

View publications per year as a table

Roman Gorbachev: publications per year, 2005 to 2026
Year	Publications
2005	1
2006	0
2007	4
2008	5
2009	7
2010	5
2011	16
2012	11
2013	12
2014	16
2015	3
2016	6
2017	11
2018	15
2019	14
2020	18
2021	14
2022	5
2023	7
2024	10
2025	11
2026	1
Total	192

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Roman Gorbachev publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Roman Gorbachev sits on this spectrum.

No. of scientists

200 400 600 800

50–69 publications 1,163+

This scientist: 152 publications — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table

Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications	Scientists	This scientist
50–69	28
70–89	152
90–109	356
110–129	487
130–149	723
150–169	835	152
170–189	850
190–209	891
210–229	862
230–249	766
250–269	726
270–289	665
290–309	593
310–329	537
330–349	477
350–369	440
370–389	356
390–409	321
410–429	256
430–449	246
450–469	216
470–489	212
490–509	174
510–529	194
530–549	162
550–569	131
570–589	111
590–609	103
610–629	99
630–649	77
650–669	92
670–689	56
690–709	53
710–729	53
730–749	38
750–769	52
770–789	43
790–809	38
810–829	34
830–849	25
850–869	18
870–889	20
890–909	24
910–929	27
930–949	20
950–969	17
970–989	10
990–1,009	16
1,010–1,029	13
1,030–1,049	12
1,050–1,069	9
1,070–1,089	8
1,090–1,109	7
1,110–1,129	9
1,130–1,149	2
1,150–1,162	5
1,163+	100

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Roman Gorbachev D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Roman Gorbachev sits on this spectrum.

No. of scientists

200 400 600

40–41 D-Index 165+

This scientist: 66 D-Index — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table

Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index	Scientists	This scientist
40–41	211
42–43	450
44–45	612
46–47	612
48–49	598
50–51	657
52–53	667
54–55	621
56–57	597
58–59	610
60–61	587
62–63	606
64–65	533
66–67	490	66
68–69	469
70–71	378
72–73	421
74–75	359
76–77	323
78–79	299
80–81	230
82–83	210
84–85	195
86–87	203
88–89	175
90–91	175
92–93	142
94–95	121
96–97	117
98–99	107
100–101	88
102–103	85
104–105	68
106–107	62
108–109	57
110–111	45
112–113	49
114–115	50
116–117	34
118–119	38
120–121	37
122–123	29
124–125	28
126–127	24
128–129	33
130–131	28
132–133	21
134–135	20
136–137	23
138–139	17
140–141	12
142–143	17
144–145	21
146–147	13
148–149	11
150–151	14
152–153	13
154–155	9
156–157	10
158–159	7
160–161	4
162–163	4
164	3
165+	98

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Overview

Roman Gorbachev is a researcher affiliated with the University of Manchester in the United Kingdom. Their main field of study is Materials Science, with a focus on Materials Chemistry as well as subfields including Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Biomedical Engineering, and Structural Biology.

Their research interests encompass several key topics, notably:

Graphene research and applications
2D Materials and Applications
Quantum and electron transport phenomena
Electronic and Structural Properties of Oxides
Surface and Thin Film Phenomena
MXene and MAX Phase Materials
Topological Materials and Phenomena

Gorbachev has published extensively, with notable recent papers including:

Interfacial ferroelectricity in marginally twisted 2D semiconductors, 2022, Nature Nanotechnology
Tracking single adatoms in liquid in a transmission electron microscope, 2022, Nature
Clean assembly of van der Waals heterostructures using silicon nitride membranes, 2023, Nature Electronics
Control of electron-electron interaction in graphene by proximity screening, 2020, Nature Communications
Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers, 2020, Faraday Discussions

They have frequently collaborated with a number of coauthors, including:

Sarah J. Haigh
Nick Clark
Vladimir I. Fal'ko
Matthew J. Hamer
Kenji Watanabe

Gorbachev's publications frequently appear in journals and venues such as:

arXiv (Cornell University)
Nature Communications
Microscopy and Microanalysis
Nano Letters
Nature

Best Publications

Field-effect tunneling transistor based on vertical graphene heterostructures.

L. Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

2982
Citations
Strong light-matter interactions in heterostructures of atomically thin films.

Líam Britnell;R. M. Ribeiro;R. M. Ribeiro;A. Eckmann;R. Jalil

2852
Citations
Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics

Thanasis Georgiou;Rashid Jalil;Branson D Belle;Liam Britnell

1938
Citations
Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Alexander S. Mayorov;Roman V. Gorbachev;Sergey V. Morozov;Liam Britnell

1880
Citations
Cloning of Dirac fermions in graphene superlattices

L. A. Ponomarenko;R. V. Gorbachev;G. L. Yu;D. C. Elias

1461
Citations
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko

1326
Citations
Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices.

S. J. Haigh;A. Gholinia;R. Jalil;S. Romani

1096
Citations
Strong plasmonic enhancement of photovoltage in graphene

T J Echtermeyer;L Britnell;P K Jasnos;A Lombardo

1067
Citations
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

Liam Britnell;Roman V. Gorbachev;Rashid Jalil;Branson D. Belle

1046
Citations
Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

Roman V. Gorbachev;Ibtsam Riaz;Rahul R. Nair;Rashid Jalil

1024
Citations
Dirac cones reshaped by interaction effects in suspended graphene

D. C. Elias;R. V. Gorbachev;A. S. Mayorov;S. V. Morozov

999
Citations
Commensurate-incommensurate transition in graphene on hexagonal boron nitride

Colin Woods;Liam Britnell;Axel Eckmann;R. S. Ma

981
Citations
Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures

Evgeny M. Alexeev;David A. Ruiz-Tijerina;David A. Ruiz-Tijerina;Mark Danovich;Matthew J. Hamer

861
Citations
Atomically thin boron nitride : a tunnelling barrier for graphene devices

Liam Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

820
Citations
Detecting topological currents in graphene superlattices

R V Gorbachev;J C W Song;J C W Song;G L Yu;Andrey Kretinin

769
Citations
Resonant tunnelling and negative differential conductance in graphene transistors

L. Britnell;R.V. Gorbachev;A.K. Geim;L.A. Ponomarenko

749
Citations
Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

A. V. Kretinin;Y. Cao;J. S. Tu;G. L. Yu

630
Citations
Tunable metal-insulator transition in double-layer graphene heterostructures

L. A. Ponomarenko;A. K. Geim;A. A. Zhukov;R. Jalil

612
Citations
Weak localization in graphene flakes.

F. V. Tikhonenko;D. W. Horsell;R. V. Gorbachev;A. K. Savchenko

541
Citations
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

A. Mishchenko;J. S. Tu;Yun Cao;Roman V Gorbachev

532
Citations
Dirac cones reshaped by interaction effects in suspended graphene (vol 7, pg 701, 2011)

D C Elias;Roman V Gorbachev;A S Mayorov;S V Morozov

25
Citations
Detecting topological currents in graphene superlattices

Geliang Yu;Andrey Kretinin;Justin Song;Roman Gorbachev

0
Citations