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D-Index & Metrics

Materials Science

D-Index
66
Citations
34795
World Ranking
5226
National Ranking
208

Roman Gorbachev publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Roman Gorbachev sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 152 publications — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Roman Gorbachev D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Roman Gorbachev sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 66 D-Index — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Roman Gorbachev is a researcher affiliated with the University of Manchester in the United Kingdom. Their main field of study is Materials Science, with a focus on Materials Chemistry as well as subfields including Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Biomedical Engineering, and Structural Biology.

Their research interests encompass several key topics, notably:

  • Graphene research and applications
  • 2D Materials and Applications
  • Quantum and electron transport phenomena
  • Electronic and Structural Properties of Oxides
  • Surface and Thin Film Phenomena
  • MXene and MAX Phase Materials
  • Topological Materials and Phenomena

Gorbachev has published extensively, with notable recent papers including:

  • Interfacial ferroelectricity in marginally twisted 2D semiconductors, 2022, Nature Nanotechnology
  • Tracking single adatoms in liquid in a transmission electron microscope, 2022, Nature
  • Clean assembly of van der Waals heterostructures using silicon nitride membranes, 2023, Nature Electronics
  • Control of electron-electron interaction in graphene by proximity screening, 2020, Nature Communications
  • Raman spectroscopy of GaSe and InSe post-transition metal chalcogenides layers, 2020, Faraday Discussions

They have frequently collaborated with a number of coauthors, including:

  • Sarah J. Haigh
  • Nick Clark
  • Vladimir I. Fal'ko
  • Matthew J. Hamer
  • Kenji Watanabe

Gorbachev's publications frequently appear in journals and venues such as:

  • arXiv (Cornell University)
  • Nature Communications
  • Microscopy and Microanalysis
  • Nano Letters
  • Nature

Best Publications

  • Field-effect tunneling transistor based on vertical graphene heterostructures.

    L. Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Strong light-matter interactions in heterostructures of atomically thin films.

    Líam Britnell;R. M. Ribeiro;R. M. Ribeiro;A. Eckmann;R. Jalil

  • Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics

    Thanasis Georgiou;Rashid Jalil;Branson D Belle;Liam Britnell

  • Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

    Alexander S. Mayorov;Roman V. Gorbachev;Sergey V. Morozov;Liam Britnell

  • Cloning of Dirac fermions in graphene superlattices

    L. A. Ponomarenko;R. V. Gorbachev;G. L. Yu;D. C. Elias

  • High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

    Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko

  • Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices.

    S. J. Haigh;A. Gholinia;R. Jalil;S. Romani

  • Strong plasmonic enhancement of photovoltage in graphene

    T J Echtermeyer;L Britnell;P K Jasnos;A Lombardo

  • Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

    Liam Britnell;Roman V. Gorbachev;Rashid Jalil;Branson D. Belle

  • Hunting for Monolayer Boron Nitride: Optical and Raman Signatures

    Roman V. Gorbachev;Ibtsam Riaz;Rahul R. Nair;Rashid Jalil

  • Dirac cones reshaped by interaction effects in suspended graphene

    D. C. Elias;R. V. Gorbachev;A. S. Mayorov;S. V. Morozov

  • Commensurate-incommensurate transition in graphene on hexagonal boron nitride

    Colin Woods;Liam Britnell;Axel Eckmann;R. S. Ma

  • Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures

    Evgeny M. Alexeev;David A. Ruiz-Tijerina;David A. Ruiz-Tijerina;Mark Danovich;Matthew J. Hamer

  • Atomically thin boron nitride : a tunnelling barrier for graphene devices

    Liam Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Detecting topological currents in graphene superlattices

    R V Gorbachev;J C W Song;J C W Song;G L Yu;Andrey Kretinin

  • Resonant tunnelling and negative differential conductance in graphene transistors

    L. Britnell;R.V. Gorbachev;A.K. Geim;L.A. Ponomarenko

  • Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

    A. V. Kretinin;Y. Cao;J. S. Tu;G. L. Yu

  • Tunable metal-insulator transition in double-layer graphene heterostructures

    L. A. Ponomarenko;A. K. Geim;A. A. Zhukov;R. Jalil

  • Weak localization in graphene flakes.

    F. V. Tikhonenko;D. W. Horsell;R. V. Gorbachev;A. K. Savchenko

  • Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

    A. Mishchenko;J. S. Tu;Yun Cao;Roman V Gorbachev

  • Dirac cones reshaped by interaction effects in suspended graphene (vol 7, pg 701, 2011)

    D C Elias;Roman V Gorbachev;A S Mayorov;S V Morozov

  • Detecting topological currents in graphene superlattices

    Geliang Yu;Andrey Kretinin;Justin Song;Roman Gorbachev

Frequent Co-Authors

Andre K. Geim
Andre K. Geim University of Manchester
Kostya S. Novoselov
Kostya S. Novoselov National University of Singapore
Vladimir I. Fal'ko
Vladimir I. Fal'ko University of Manchester
Sarah J. Haigh
Sarah J. Haigh University of Manchester
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Artem Mishchenko
Artem Mishchenko University of Manchester
Irina V. Grigorieva
Irina V. Grigorieva University of Manchester
Sergey V. Morozov
Sergey V. Morozov Russian Academy of Sciences
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Mikhail I. Katsnelson
Mikhail I. Katsnelson Radboud University

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