World's Best Scientists 2026 revealed!

D-Index & Metrics

Physics

D-Index
85
Citations
65612
World Ranking
2557
National Ranking
49

Overview

Wang Yao is affiliated with the University of Hong Kong in China. Their research primarily spans the fields of Materials Science, Physics and Astronomy, and Engineering. The scientist's work extends into key subfields including Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Biomedical Engineering, and Molecular Biology.

The main topics addressed in Wang Yao's research include 2D Materials and Applications, Topological Materials and Phenomena, Graphene Research and Applications, Perovskite Materials and Applications, Quantum and Electron Transport Phenomena, Advanced Biosensing and Bioanalysis Techniques, and Advanced Condensed Matter Physics.

Frequent coauthors in their work include Takashi Taniguchi, Kenji Watanabe, Xiaodong Xu, Hongyi Yu, and Dawei Zhai.

Wang Yao has contributed to numerous publications across several journals and platforms. Their common publication venues are:

  • arXiv (Cornell University)
  • Physical Review B
  • Nature Communications
  • Nano Letters
  • SSRN Electronic Journal

Among their recent papers are:

  • "Signatures of fractional quantum anomalous Hall states in twisted MoTe2", 2023, Nature
  • "Observation of fractionally quantized anomalous Hall effect", 2023, Nature
  • "Excitons and emergent quantum phenomena in stacked 2D semiconductors", 2021, Nature
  • "Field-induced quantum spin disordered state in spin-1/2 honeycomb magnet Na2Co2TeO6", 2021, Nature Communications
  • "Multigene phylogeny of the family Cordycipitaceae (Hypocreales): new taxa and the new systematic position of the Chinese cordycipitoid fungus Paecilomyces hepiali", 2020, Fungal Diversity

Best Publications

  • Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

    Bevin Huang;Genevieve Clark;Efrén Navarro-Moratalla;Dahlia R. Klein

  • Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.

    Di Xiao;Gui-Bin Liu;Wanxiang Feng;Wanxiang Feng;Wanxiang Feng;Xiaodong Xu

  • Valley polarization in MoS2 monolayers by optical pumping

    Hualing Zeng;Junfeng Dai;Junfeng Dai;Wang Yao;Di Xiao

  • Spin and pseudospins in layered transition metal dichalcogenides

    Xiaodong Xu;Wang Yao;Di Xiao;Tony F. Heinz

  • Valleytronics in 2D materials

    John R. Schaibley;Hongyi Yu;Genevieve Clark;Pasqual Rivera

  • Valley-Contrasting Physics in Graphene : Magnetic Moment and Topological Transport

    Di Xiao;Wang Yao;Qian Niu

  • Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.

    Jason S. Ross;Philip Klement;Aaron M. Jones;Nirmal J. Ghimire

  • Electrical control of neutral and charged excitons in a monolayer semiconductor

    Jason S. Ross;Sanfeng Wu;Hongyi Yu;Nirmal J. Ghimire;Nirmal J. Ghimire

  • Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

    Pasqual Rivera;John R. Schaibley;Aaron M. Jones;Jason S. Ross

  • Optical generation of excitonic valley coherence in monolayer WSe2

    Aaron M. Jones;Hongyi Yu;Nirmal J. Ghimire;Nirmal J. Ghimire;Sanfeng Wu

  • Two-dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2.

    Zaiyao Fei;Bevin Huang;Paul Malinowski;Wenbo Wang

  • Electrical control of 2D magnetism in bilayer CrI 3 .

    Bevin Huang;Genevieve Clark;Dahlia R. Klein;David MacNeill

  • Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures.

    Tiancheng Song;Xinghan Cai;Matisse Wei-Yuan Tu;Xiaoou Zhang

  • Signatures of moiré-trapped valley excitons in MoSe 2 /WSe 2 heterobilayers

    Kyle L. Seyler;Pasqual Rivera;Hongyi Yu;Nathan P. Wilson

  • Valley-dependent optoelectronics from inversion symmetry breaking

    Wang Yao;Di Xiao;Qian Niu

  • Single quantum emitters in monolayer semiconductors

    Yu-Ming He;Genevieve Clark;John R. Schaibley;Yu He

  • Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors

    Chunming Huang;Sanfeng Wu;Ana M. Sanchez;Jonathan J. P. Peters

  • Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides

    Gui-Bin Liu;Gui-Bin Liu;Wen-Yu Shan;Yugui Yao;Wang Yao

  • Monolayer semiconductor nanocavity lasers with ultralow thresholds

    Sanfeng Wu;Sonia Buckley;John R. Schaibley;Liefeng Feng

  • Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2

    Zaiyao Fei;Bevin Huang;Paul Malinowski;Wenbo Wang

Frequent Co-Authors

Xiaodong Xu
Xiaodong Xu University of Washington
Jiaqiang Yan
Jiaqiang Yan Oak Ridge National Laboratory
Di Xiao
Di Xiao Carnegie Mellon University
David Cobden
David Cobden University of Washington
David Mandrus
David Mandrus University of Tennessee at Knoxville
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
L. J. Sham
L. J. Sham University of California, San Diego
Qian Niu
Qian Niu The University of Texas at Austin
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science

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