World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
91
Citations
39413
World Ranking
1573
National Ranking
490

Physics

D-Index
92
Citations
40022
World Ranking
2086
National Ranking
1067

Jiaqiang Yan publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jiaqiang Yan sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 528 publications — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jiaqiang Yan D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jiaqiang Yan sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 91 D-Index — 88th percentile

88% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jiaqiang Yan is affiliated with Oak Ridge National Laboratory in the United States. Their research spans multiple domains within physics and materials science, with a specific focus on condensed matter physics and materials chemistry. The scientist's work extensively covers advanced topics in the physical sciences, reflecting significant interdisciplinary engagement.

The main fields of study for Jiaqiang Yan include:

  • Physics and Astronomy
  • Materials Science

Their research further delves into several subfields of study, such as:

  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Key topics explored in their publications cover:

  • Advanced Condensed Matter Physics
  • Topological Materials and Phenomena
  • Physics of Superconductivity and Magnetism
  • Magnetic and transport properties of perovskites and related materials
  • 2D Materials and Applications
  • Graphene research and applications
  • Electronic and Structural Properties of Oxides

Jiaqiang Yan has contributed to numerous research papers, some of which are among the more frequently cited in their field. Selected recent publications include:

  • "The emergent field of high entropy oxides: Design, prospects, challenges, and opportunities for tailoring material properties" (2020) published in APL Materials
  • "Gapless Dirac surface states in the antiferromagnetic topological insulator MnBi2Te4" (2020) published in Physical Review B
  • "Oscillations of the thermal conductivity observed in the spin-liquid state of α-RuCl3" (2021) published on arXiv (Cornell University)
  • "Deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2" (2022) published in Nature Materials
  • "Intertwined Topological and Magnetic Orders in Atomically Thin Chern Insulator MnBi2Te4" (2021) published in Nano Letters

Frequent co-authorship partnerships have been established with:

  • David Mandrus
  • Michael A. McGuire
  • Takashi Taniguchi
  • Kenji Watanabe
  • S. E. Nagler

The main venues where Jiaqiang Yan has published are:

  • arXiv (Cornell University)
  • Physical Review B
  • Physical Review Materials
  • Nano Letters
  • Nature Communications

Best Publications

  • Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.

    Jason S. Ross;Philip Klement;Aaron M. Jones;Nirmal J. Ghimire

  • Electrical control of neutral and charged excitons in a monolayer semiconductor

    Jason S. Ross;Sanfeng Wu;Hongyi Yu;Nirmal J. Ghimire;Nirmal J. Ghimire

  • Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures

    Pasqual Rivera;John R. Schaibley;Aaron M. Jones;Jason S. Ross

  • Optical generation of excitonic valley coherence in monolayer WSe2

    Aaron M. Jones;Hongyi Yu;Nirmal J. Ghimire;Nirmal J. Ghimire;Sanfeng Wu

  • Signatures of moiré-trapped valley excitons in MoSe 2 /WSe 2 heterobilayers

    Kyle L. Seyler;Pasqual Rivera;Hongyi Yu;Nathan P. Wilson

  • Proximate Kitaev quantum spin liquid behaviour in a honeycomb magnet

    A. Banerjee;C. A. Bridges;J.-Q. Yan;J.-Q. Yan;A. A. Aczel

  • Magnetic control of valley pseudospin in monolayer WSe2

    G. Aivazian;Zhirui Gong;Aaron M. Jones;Rui Lin Chu

  • Ferroelectric switching of a two-dimensional metal

    Zaiyao Fei;Wenjin Zhao;Tauno A. Palomaki;Bosong Sun

  • Monolayer semiconductor nanocavity lasers with ultralow thresholds

    Sanfeng Wu;Sonia Buckley;John R. Schaibley;Liefeng Feng

  • Valley-polarized exciton dynamics in a 2D semiconductor heterostructure.

    Pasqual Rivera;Kyle L. Seyler;Hongyi Yu;John R. Schaibley

  • Neutron scattering in the proximate quantum spin liquid α-RuCl 3 .

    Arnab Banerjee;Jiaqiang Yan;Johannes Knolle;Craig A. Bridges

  • Signatures of moir'e-trapped valley excitons in MoSe$_2$/WSe$_2$ heterobilayers

    Kyle L. Seyler;Pasqual Rivera;Hongyi Yu;Nathan P. Wilson

  • Effects of Co substitution on thermodynamic and transport properties and anisotropic H c 2 in Ba ( Fe 1 − x Co x ) 2 As 2 single crystals

    N. Ni;M. E. Tillman;J.-Q. Yan;A. Kracher

  • Electrical control of second-harmonic generation in a WSe2 monolayer transistor

    Kyle L. Seyler;John R. Schaibley;Pu Gong;Pasqual Rivera

  • Neutron tomography of magnetic Majorana fermions in a proximate quantum spin liquid

    Arnab Banerjee;Jiaqiang Yan;Roderich Moessner;David A. Tennant

  • Spectroscopic evidence for a type II Weyl semimetallic state in MoTe2

    Lunan Huang;Timothy M. McCormick;Masayuki Ochi;Zhiying Zhao

  • High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts

    Hsun Jen Chuang;Xuebin Tan;Nirmal Jeevi Ghimire;Meeghage Madusanka Perera

  • Spectroscopic evidence for type II Weyl semimetal state in MoTe2

    Lunan Huang;Timothy M. McCormick;Masayuki Ochi;Zhiying Zhao

  • Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy

    A. R. Klots;A. K. M. Newaz;A. K. M. Newaz;Bin Wang;Bin Wang;D. Prasai

  • Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2, MoS2, and MoSe2 Transistors

    Hsun Jen Chuang;Bhim Chamlagain;Michael Koehler;Meeghage Madusanka Perera

Frequent Co-Authors

David Mandrus
David Mandrus University of Tennessee at Knoxville
Brian C. Sales
Brian C. Sales Oak Ridge National Laboratory
Wang Yao
Wang Yao University of Hong Kong
John B. Goodenough
John B. Goodenough The University of Texas at Austin
Yang Ren
Yang Ren City University of Hong Kong
Jianshi Zhou
Jianshi Zhou The University of Texas at Austin
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Alan I. Goldman
Alan I. Goldman Iowa State University
Thomas A. Lograsso
Thomas A. Lograsso Ames Laboratory
David Vaknin
David Vaknin Iowa State University

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