World's Best Scientists 2026 revealed!

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Materials Science

D-Index
79
Citations
64733
World Ranking
2750
National Ranking
775

Research.com Recognitions

  • 2017 - Fellow of Alfred P. Sloan Foundation

Overview

Kin Fai Mak is affiliated with Cornell University in the United States. Their research spans the fields of Physics and Astronomy as well as Materials Science, with a primary focus on Atomic and Molecular Physics, and Optics, Materials Chemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Electrical and Electronic Engineering.

The scientist's work extensively covers topics including 2D Materials and Applications, Quantum and electron transport phenomena, Topological Materials and Phenomena, Graphene research and applications, Electronic and Structural Properties of Oxides, Perovskite Materials and Applications, and the Physics of Superconductivity and Magnetism.

Several frequent coauthors have collaborated with Kin Fai Mak, among them Jie Shan, Takashi Taniguchi, Kenji Watanabe, and Kaifei Kang.

Their publications are often found in notable venues, including arXiv (Cornell University), Nature, Nature Nanotechnology, Nano Letters, and Nature Physics.

Representative recent papers authored or coauthored by them include:

  • Semiconductor moiré materials, 2022, Nature Nanotechnology
  • Thermodynamic evidence of fractional Chern insulator in moiré MoTe2, 2023, Nature
  • Quantum anomalous Hall effect from intertwined moiré bands, 2021, Nature
  • The marvels of moiré materials, 2021, Nature Reviews Materials
  • Simulation of Hubbard model physics in WSe2/WS2 moiré superlattices, 2020, Nature

Among the awards received by Kin Fai Mak is the Fellow of the Alfred P. Sloan Foundation awarded in 2017.

Best Publications

  • Atomically thin MoS2: a new direct-gap semiconductor

    Kin Fai Mak;Changgu Lee;James Hone;Jie Shan

  • Control of valley polarization in monolayer MoS2 by optical helicity

    Kin Fai Mak;Keliang He;Jie Shan;Tony F. Heinz

  • Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

    Kin Fai Mak;Jie Shan

  • Tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • Observation of tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • The valley Hall effect in MoS2 transistors

    K. F. Mak;K. L. McGill;J. Park;P. L. McEuen

  • High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

    Kibum Kang;Saien Xie;Lujie Huang;Yimo Han

  • Measurement of the optical conductivity of graphene.

    Kin Fai Mak;Matthew Y. Sfeir;Yang Wu;Chun Hung Lui

  • Tightly bound excitons in monolayer WSe(2).

    Keliang He;Nardeep Kumar;Liang Zhao;Zefang Wang

  • Ising pairing in superconducting NbSe2 atomic layers

    Xiaoxiang Xi;Zefang Wang;Weiwei Zhao;Ju Hyun Park

  • Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation.

    Yilei Li;Yi Rao;Kin Fai Mak;Yumeng You

  • Controlling magnetism in 2D CrI 3 by electrostatic doping

    Shengwei Jiang;Lizhong Li;Zefang Wang;Zefang Wang;Kin Fai Mak

  • Strongly enhanced charge-density-wave order in monolayer NbSe2

    Xiaoxiang Xi;Liang Zhao;Zefang Wang;Helmuth Berger

  • Optical spectroscopy of graphene: From the far infrared to the ultraviolet

    Kin Fai Mak;Long Ju;Feng Wang;Feng Wang;Tony F. Heinz

  • Simulation of Hubbard model physics in WSe 2/WS 2 moiré superlattices

    Yanhao Tang;Lizhong Li;Tingxin Li;Yang Xu

  • Electric-field switching of two-dimensional van der Waals magnets.

    Shengwei Jiang;Shengwei Jiang;Jie Shan;Jie Shan;Kin Fai Mak;Kin Fai Mak

  • Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

    Keliang He;Charles Poole;Kin Fai Mak;Jie Shan

  • Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe 2

    David MacNeill;Colin Heikes;Kin Fai Mak;Zachary Anderson

  • Controlling magnetism in 2D CrI3 by electrostatic doping

    Shengwei Jiang;Lizhong Li;Zefang Wang;Kin Fai Mak

  • Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy.

    Kin Fai Mak;Chun Hung Lui;Jie Shan;Tony F. Heinz

Frequent Co-Authors

Jie Shan
Jie Shan Cornell University
Tony F. Heinz
Tony F. Heinz Stanford University
James Hone
James Hone Columbia University
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
László Forró
László Forró University of Notre Dame
Daniel C. Ralph
Daniel C. Ralph Cornell University
Matthew Y. Sfeir
Matthew Y. Sfeir City University of New York
Daniel Rhodes
Daniel Rhodes Columbia University

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