World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
79
Citations
64733
World Ranking
2748
National Ranking
773

Kin Fai Mak publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Kin Fai Mak sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 217 publications — 36th percentile

36% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Kin Fai Mak D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Kin Fai Mak sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 79 D-Index — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2017 - Fellow of Alfred P. Sloan Foundation

Overview

Kin Fai Mak is affiliated with Cornell University in the United States. Their research spans the fields of Physics and Astronomy as well as Materials Science, with a primary focus on Atomic and Molecular Physics, and Optics, Materials Chemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Electrical and Electronic Engineering.

The scientist's work extensively covers topics including 2D Materials and Applications, Quantum and electron transport phenomena, Topological Materials and Phenomena, Graphene research and applications, Electronic and Structural Properties of Oxides, Perovskite Materials and Applications, and the Physics of Superconductivity and Magnetism.

Several frequent coauthors have collaborated with Kin Fai Mak, among them Jie Shan, Takashi Taniguchi, Kenji Watanabe, and Kaifei Kang.

Their publications are often found in notable venues, including arXiv (Cornell University), Nature, Nature Nanotechnology, Nano Letters, and Nature Physics.

Representative recent papers authored or coauthored by them include:

  • Semiconductor moiré materials, 2022, Nature Nanotechnology
  • Thermodynamic evidence of fractional Chern insulator in moiré MoTe2, 2023, Nature
  • Quantum anomalous Hall effect from intertwined moiré bands, 2021, Nature
  • The marvels of moiré materials, 2021, Nature Reviews Materials
  • Simulation of Hubbard model physics in WSe2/WS2 moiré superlattices, 2020, Nature

Among the awards received by Kin Fai Mak is the Fellow of the Alfred P. Sloan Foundation awarded in 2017.

Best Publications

  • Atomically thin MoS2: a new direct-gap semiconductor

    Kin Fai Mak;Changgu Lee;James Hone;Jie Shan

  • Control of valley polarization in monolayer MoS2 by optical helicity

    Kin Fai Mak;Keliang He;Jie Shan;Tony F. Heinz

  • Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

    Kin Fai Mak;Jie Shan

  • Tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • Observation of tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • The valley Hall effect in MoS2 transistors

    K. F. Mak;K. L. McGill;J. Park;P. L. McEuen

  • High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity

    Kibum Kang;Saien Xie;Lujie Huang;Yimo Han

  • Measurement of the optical conductivity of graphene.

    Kin Fai Mak;Matthew Y. Sfeir;Yang Wu;Chun Hung Lui

  • Tightly bound excitons in monolayer WSe(2).

    Keliang He;Nardeep Kumar;Liang Zhao;Zefang Wang

  • Ising pairing in superconducting NbSe2 atomic layers

    Xiaoxiang Xi;Zefang Wang;Weiwei Zhao;Ju Hyun Park

  • Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation.

    Yilei Li;Yi Rao;Kin Fai Mak;Yumeng You

  • Controlling magnetism in 2D CrI 3 by electrostatic doping

    Shengwei Jiang;Lizhong Li;Zefang Wang;Zefang Wang;Kin Fai Mak

  • Strongly enhanced charge-density-wave order in monolayer NbSe2

    Xiaoxiang Xi;Liang Zhao;Zefang Wang;Helmuth Berger

  • Optical spectroscopy of graphene: From the far infrared to the ultraviolet

    Kin Fai Mak;Long Ju;Feng Wang;Feng Wang;Tony F. Heinz

  • Simulation of Hubbard model physics in WSe 2/WS 2 moiré superlattices

    Yanhao Tang;Lizhong Li;Tingxin Li;Yang Xu

  • Electric-field switching of two-dimensional van der Waals magnets.

    Shengwei Jiang;Shengwei Jiang;Jie Shan;Jie Shan;Kin Fai Mak;Kin Fai Mak

  • Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

    Keliang He;Charles Poole;Kin Fai Mak;Jie Shan

  • Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe 2

    David MacNeill;Colin Heikes;Kin Fai Mak;Zachary Anderson

  • Controlling magnetism in 2D CrI3 by electrostatic doping

    Shengwei Jiang;Lizhong Li;Zefang Wang;Kin Fai Mak

  • Observation of an electric-field-induced band gap in bilayer graphene by infrared spectroscopy.

    Kin Fai Mak;Chun Hung Lui;Jie Shan;Tony F. Heinz

Frequent Co-Authors

Jie Shan
Jie Shan Cornell University
Tony F. Heinz
Tony F. Heinz Stanford University
James Hone
James Hone Columbia University
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
László Forró
László Forró University of Notre Dame
Daniel C. Ralph
Daniel C. Ralph Cornell University
Matthew Y. Sfeir
Matthew Y. Sfeir City University of New York
Daniel Rhodes
Daniel Rhodes Columbia University

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