World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
44
Citations
9704
World Ranking
11940
National Ranking
2772

Daniel Rhodes publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Daniel Rhodes sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 223 publications — 38th percentile

38% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Daniel Rhodes D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Daniel Rhodes sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 44 D-Index — 7th percentile

7% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Daniel Rhodes is a researcher affiliated with Columbia University in the United States. Their work primarily focuses on Materials Science, Physics and Astronomy, and Engineering. Within these broad fields, Rhodes has contributed extensively to subfields including Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, and Biomedical Engineering.

Their research covers a variety of topics related to advanced materials and physical phenomena. Key topics include 2D Materials and Applications, Graphene Research and Applications, Topological Materials and Phenomena, Quantum and Electron Transport Phenomena, Perovskite Materials and Applications, MXene and MAX Phase Materials, and Strong Light-Matter Interactions.

Rhodes has a significant number of publications in several frequent venues, reflecting their active engagement with leading scientific communities. These venues include arXiv (Cornell University), Nano Letters, Nature Communications, Physical Review Letters, and ACS Nano.

Among their recent scientific papers are:

  • Correlated electronic phases in twisted bilayer transition metal dichalcogenides, 2020, Nature Materials
  • Quantum criticality in twisted transition metal dichalcogenides, 2021, Nature
  • Zero-field superconducting diode effect in small-twist-angle trilayer graphene, 2022, Nature Physics
  • Coupled ferroelectricity and superconductivity in bilayer Td-MoTe2, 2023, Nature
  • Spin-orbit driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene, 2021, arXiv (Cornell University)

Frequent collaborators of Rhodes include James Hone, Takashi Taniguchi, Kenji Watanabe, Cory R. Dean, and Yangchen He. This network of co-authors suggests interdisciplinary and collaborative efforts in related research domains.

Rhodes has also contributed to book publications, with a notable work titled Early Islamic North Africa, published by Bloomsbury Academic eBooks in 2020.

Best Publications

  • Correlated electronic phases in twisted bilayer transition metal dichalcogenides

    Lei Wang;Lei Wang;En-Min Shih;Augusto Ghiotto;Lede Xian

  • Disorder in van der Waals heterostructures of 2D materials

    Daniel Rhodes;Sang Hoon Chae;Rebeca Ribeiro-Palau;James Hone

  • Evidence of high-temperature exciton condensation in two-dimensional atomic double layers.

    Zefang Wang;Daniel A. Rhodes;Kenji Watanabe;Takashi Taniguchi

  • New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides

    H. Terrones;E. Del Corro;S. Feng;J. M. Poumirol

  • An ultrafast symmetry switch in a Weyl semimetal.

    Edbert J. Sie;Clara M. Nyby;C. D. Pemmaraju;Su Ji Park

  • Correlated insulating states at fractional fillings of moiré superlattices.

    Yang Xu;Song Liu;Daniel A. Rhodes;Kenji Watanabe

  • Field-effect transistors based on few-layered α-MoTe2

    Nihar R. Pradhan;Daniel Rhodes;Simin Feng;Yan Xin

  • Field-Effect Transistors Based on Few-Layered alpha-MoTe_2

    Nihar R. Pradhan;Daniel Rhodes;Simin Feng;Yan Xin

  • Zero-field superconducting diode effect in small-twist-angle trilayer graphene

    Unknown

  • Quantum Criticality in Twisted Transition Metal Dichalcogenides

    Augusto Ghiotto;En-Min Shih;Giancarlo S. S. G. Pereira;Daniel A. Rhodes

  • Magic continuum in twisted bilayer WSe2

    Lei Wang;En-Min Shih;Augusto Ghiotto;Lede Xian

  • Deterministic coupling of site-controlled quantum emitters in monolayer WSe 2 to plasmonic nanocavities.

    Yue Luo;Gabriella D. Shepard;Jenny V. Ardelean;Daniel A. Rhodes

  • Coupled ferroelectricity and superconductivity in bilayer T_d-MoTe_2

    Unknown

  • Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control.

    Drew Edelberg;Daniel Rhodes;Alexander Kerelsky;Bumho Kim

  • Evidence of high-temperature exciton condensation in 2D atomic double layers

    Zefang Wang;Daniel A. Rhodes;Kenji Watanabe;Takashi Taniguchi

  • Spin–orbit-driven band inversion in bilayer graphene by the van der Waals proximity effect

    J. O. Island;X. Cui;C. Lewandowski;J. Y. Khoo

  • Spin-orbit–driven ferromagnetism at half moiré filling in magic-angle twisted bilayer graphene

    Unknown

  • Efficient generation of neutral and charged biexcitons in encapsulated WSe 2 monolayers

    Ziliang Ye;Lutz Waldecker;Eric Yue Ma;Daniel Rhodes

  • Atypical Exciton–Phonon Interactions in WS2 and WSe2 Monolayers Revealed by Resonance Raman Spectroscopy

    E. del Corro;A. Botello-Méndez;Y. Gillet;A. L. Elias

  • Imaging strain-localized excitons in nanoscale bubbles of monolayer WSe2 at room temperature.

    Thomas P. Darlington;Christian Carmesin;Matthias Florian;Emanuil Yanev

  • Engineering the Structural and Electronic Phases of MoTe2 through W Substitution

    D. Rhodes;D. A. Chenet;B. E. Janicek;C. Nyby

  • Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilities.

    Nihar R. Pradhan;Daniel Rhodes;Yan Xin;Shahriar Memaran

  • Hall and field-effect mobilities in few layered p -WSe 2 field-effect transistors

    N. R. Pradhan;D. Rhodes;S. Memaran;J. M. Poumirol

  • Evaluating the potential for high thermoelectric efficiency of silver selenide

    Tristan Day;Fivos Drymiotis;Tiansong Zhang;Daniel Rhodes

  • Deterministic coupling of site-controlled quantum emitters in monolayer semiconductors to plasmonic nanocavities

    Yue Luo;Gabriella D. Shepard;Jenny V. Ardelean;James C. Hone

  • Metal to Insulator Quantum-Phase Transition in Few-Layered ReS2

    Nihar R. Pradhan;Amber McCreary;Amber McCreary;Daniel Rhodes;Zhengguang Lu

  • Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature

    Thomas P. Darlington;Christian Carmesin;Matthias Florian;Emanuil Yanev

  • Quantum criticality in twisted transition metal dichalcogenides.

    Augusto Ghiotto;En-Min Shih;Giancarlo S. S. G. Pereira;Daniel A. Rhodes

  • New First Order Raman-active Modes in Few Layered Transition Metal

    Dichalcogenides Terrones;E. Del Corro;S. Feng;J. M. Poumirol

Frequent Co-Authors

James Hone
James Hone Columbia University
Luis Balicas
Luis Balicas Florida State University
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Cory Dean
Cory Dean Columbia University
Mauricio Terrones
Mauricio Terrones Pennsylvania State University
Tony F. Heinz
Tony F. Heinz Stanford University
Xiaoyang Zhu
Xiaoyang Zhu Columbia University
Katayun Barmak
Katayun Barmak Columbia University
Simin Feng
Simin Feng Tsinghua University

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