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D-Index & Metrics

Materials Science

D-Index
43
Citations
9814
World Ranking
12226
National Ranking
3350

Overview

Simin Feng is a researcher affiliated with Tsinghua University in China. Their work primarily spans the fields of Materials Science and Engineering, with a significant focus on Materials Chemistry, Electrical and Electronic Engineering, and Biomedical Engineering. Their research also touches on Polymers and Plastics, as well as Electronic, Optical, and Magnetic Materials.

The main topics of Simin Feng's research include 2D Materials and Applications, MXene and MAX Phase Materials, Advanced Sensor and Energy Harvesting Materials, Graphene research and applications, Perovskite Materials and Applications, Gas Sensing Nanomaterials and Sensors, and Conducting polymers and applications.

Recent publications representative of their research output include:

  • Flexible Artificial Sensory Systems Based on Neuromorphic Devices, 2021, ACS Nano
  • Zeolitic imidazolate framework-8 (ZIF-8) for drug delivery: A critical review, 2020, Frontiers of Chemical Science and Engineering
  • Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides, 2020, ACS Nano
  • Doping Concentration Modulation in Vanadium-Doped Monolayer Molybdenum Disulfide for Synaptic Transistors, 2021, ACS Nano
  • Biological Tissue-Inspired Ultrasoft, Ultrathin, and Mechanically Enhanced Microfiber Composite Hydrogel for Flexible Bioelectronics, 2023, Nano-Micro Letters

Simin Feng frequently publishes in venues such as arXiv (Cornell University), Small, ACS Nano, Microsystems & Nanoengineering, and Advanced Functional Materials.

Their research collaborations include frequent co-authorship with Bilu Liu, Ting Zhang, Hui-Ming Cheng, Fuqin Sun, and Qifeng Lu.

Best Publications

  • Three-dimensionally bonded spongy graphene material with super compressive elasticity and near-zero Poisson’s ratio

    Yingpeng Wu;Ningbo Yi;Lu Huang;Tengfei Zhang

  • Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers.

    Ana Laura Elías;Néstor Perea-López;Andrés Castro-Beltrán;Andrés Castro-Beltrán;Ayse Berkdemir

  • Photosensor Device Based on Few-Layered WS2 Films

    Néstor Perea-López;Ana Laura Elías;Ayse Berkdemir;Andres Castro-Beltran

  • New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides

    H. Terrones;E. Del Corro;S. Feng;J. M. Poumirol

  • Manganese Doping of Monolayer MoS2: The Substrate Is Critical

    Kehao Zhang;Simin Feng;Junjie Wang;Angelica Azcatl

  • Field-effect transistors based on few-layered α-MoTe2

    Nihar R. Pradhan;Daniel Rhodes;Simin Feng;Yan Xin

  • Field-Effect Transistors Based on Few-Layered alpha-MoTe_2

    Nihar R. Pradhan;Daniel Rhodes;Simin Feng;Yan Xin

  • Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide.

    Victor Carozo;Yuanxi Wang;Kazunori Fujisawa;Bruno R. Carvalho;Bruno R. Carvalho

  • Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe2 Observed by Resonant Raman Spectroscopy

    Elena del Corro;Humberto Terrones;Ana Elias;Cristiano Fantini

  • Flexible Artificial Sensory Systems Based on Neuromorphic Devices.

    Fuqin Sun;Fuqin Sun;Qifeng Lu;Simin Feng;Ting Zhang;Ting Zhang

  • Coherent perfect absorption in epsilon-near-zero metamaterials

    Simin Feng;Klaus Halterman

  • Ultrasensitive molecular sensor using N-doped graphene through enhanced Raman scattering

    Simin Feng;Maria Cristina dos Santos;Bruno R. Carvalho;Bruno R. Carvalho;Ruitao Lv

  • Ultrasensitive gas detection of large-area boron-doped graphene

    Ruitao Lv;Ruitao Lv;Gugang Chen;Qing Li;Amber McCreary

  • Atypical Exciton–Phonon Interactions in WS2 and WSe2 Monolayers Revealed by Resonance Raman Spectroscopy

    E. del Corro;A. Botello-Méndez;Y. Gillet;A. L. Elias

  • Gouy shift and temporal reshaping of focused single-cycle electromagnetic pulses

    Simin Feng;Herbert G. Winful;Robert W. Hellwarth

  • Electrochemical Characterization of Liquid Phase Exfoliated Two-Dimensional Layers of Molybdenum Disulfide

    Andrew Winchester;Sujoy Ghosh;Simin Feng;Ana Laura Elias

  • Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers

    Yongji Gong;Zhong Lin;Gonglan Ye;Gang Shi

  • Hall and field-effect mobilities in few layered p -WSe 2 field-effect transistors

    N. R. Pradhan;D. Rhodes;S. Memaran;J. M. Poumirol

  • Directional perfect absorption using deep subwavelength low-permittivity films

    Ting S. Luk;Salvatore Campione;Iltai Kim;Simin Feng

  • Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides.

    Lei Tang;Tao Li;Yuting Luo;Simin Feng

  • New First Order Raman-active Modes in Few Layered Transition Metal

    Dichalcogenides Terrones;E. Del Corro;S. Feng;J. M. Poumirol

  • Ultrasensitive Molecular Sensor Using N-doped Graphene through Enhanced Raman Scattering

    Simin Feng;Maria Cristina dos Santos;Bruno R. Carvalho;Ruitao Lv

Frequent Co-Authors

Mauricio Terrones
Mauricio Terrones Pennsylvania State University
Ana Laura Elías
Ana Laura Elías Binghamton University
Humberto Terrones
Humberto Terrones Rensselaer Polytechnic Institute
Hui-Ming Cheng
Hui-Ming Cheng Shenzhen Institutes of Advanced Technology
Luis Balicas
Luis Balicas Florida State University
Daniel Rhodes
Daniel Rhodes Columbia University
Bilu Liu
Bilu Liu Tsinghua University
Ruitao Lv
Ruitao Lv Tsinghua University
Herbert G. Winful
Herbert G. Winful University of Michigan–Ann Arbor
Saikat Talapatra
Saikat Talapatra Southern Illinois University Carbondale

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