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D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 55 8440 8153 2077 1924 136 18986

Ana Laura Elías publications per year

The chart shows the history of publications by Ana Laura Elías between 2005 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Ana Laura Elías published across 21 years, from 2005 to 2025, averaging 7.1 papers a year. Output peaked at 26 publications in 2014. 13 of the 150 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 2005 to 2025. Vertical axis: number of publications, 0 to 26. Peak 26 publications in 2014. 2005: 2 publications 2006: 5 publications 2007: 1 publication 2008: 0 publications 2009: 1 publication 2010: 3 publications 2011: 1 publication 2012: 5 publications 2013: 19 publications 2014: 26 publications 2015: 18 publications 2016: 17 publications 2017: 11 publications 2018: 3 publications 2019: 4 publications 2020: 9 publications 2021: 7 publications 2022: 1 publication 2023: 4 publications 2024: 10 publications 2025: 3 publications
2005 2025

150 publications in total across all disciplines

View publications per year as a table
Ana Laura Elías: publications per year, 2005 to 2025
Year Publications
2005 2
2006 5
2007 1
2008 0
2009 1
2010 3
2011 1
2012 5
2013 19
2014 26
2015 18
2016 17
2017 11
2018 3
2019 4
2020 9
2021 7
2022 1
2023 4
2024 10
2025 3
Total 150
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Ana Laura Elías publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Ana Laura Elías sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 130–149 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 136 publications — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723 136
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Ana Laura Elías D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Ana Laura Elías sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 54–55 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 55 D-Index — 34th percentile

34% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621 55
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

Ana Laura Elías is affiliated with Binghamton University in the United States and has made contributions in the fields of Materials Science and Engineering. Their research predominantly explores Materials Chemistry, Electrical and Electronic Engineering, and renewable energy-related disciplines.

Their work addresses several key subfields, including:

  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

The main topics covered in their research encompass:

  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Perovskite Materials and Applications
  • Electrocatalysts for Energy Conversion
  • Advanced Photocatalysis Techniques
  • Catalytic Processes in Materials Science

Among their recent publications are the following papers:

  • Monolayer Vanadium-Doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor (2020, Advanced Science)
  • Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis (2020, ACS Nano)
  • Spontaneous chemical functionalization via coordination of Au single atoms on monolayer MoS 2 (2020, Science Advances)
  • Quantification and Healing of Defects in Atomically Thin Molybdenum Disulfide: Beyond the Controlled Creation of Atomic Defects (2021, ACS Nano)
  • Low temperature activation of inert hexagonal boron nitride for metal deposition and single atom catalysis (2021, Materials Today)

Their frequent coauthors include:

  • Mauricio Terrones
  • Kazunori Fujisawa
  • Tianyi Zhang
  • Yu Lei
  • Fu Zhang

Publication venues where they have contributed multiple works include:

  • Small
  • arXiv (Cornell University)
  • ACS Nano
  • 2D Materials
  • Physical Review B

Best Publications

  • Extraordinary room-temperature photoluminescence in triangular WS2 monolayers.

    Humberto R. Gutiérrez;Nestor Perea-López;Ana Laura Elías;Ayse Berkdemir

  • Identification of individual and few layers of WS2 using Raman Spectroscopy

    Ayse Berkdemir;Humberto R. Gutiérrez;Humberto R. Gutiérrez;Andrés R. Botello-Méndez;Néstor Perea-López

  • Extraordinary room-temperature photoluminescence in WS2 monolayers

    Humberto R. Gutiérrez;Nestor Perea-López;Ana Laura Elías;Ayse Berkdemir

  • Graphene and graphite nanoribbons: Morphology, properties, synthesis, defects and applications

    Mauricio Terrones;Andrés R. Botello-Méndez;Jessica Campos-Delgado;Florentino López-Urías

  • Three-dimensionally bonded spongy graphene material with super compressive elasticity and near-zero Poisson’s ratio

    Yingpeng Wu;Ningbo Yi;Lu Huang;Tengfei Zhang

  • Nitrogen-doped graphene: beyond single substitution and enhanced molecular sensing

    Ruitao Lv;Qing Li;Andrés R. Botello-Méndez;Takuya Hayashi

  • Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers.

    Ana Laura Elías;Néstor Perea-López;Andrés Castro-Beltrán;Andrés Castro-Beltrán;Ayse Berkdemir

  • Photosensor Device Based on Few-Layered WS2 Films

    Néstor Perea-López;Ana Laura Elías;Ayse Berkdemir;Andres Castro-Beltran

  • Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide.

    Yongji Gong;Zheng Liu;Zheng Liu;Andrew R. Lupini;Gang Shi

  • New First Order Raman-active Modes in Few Layered Transition Metal Dichalcogenides

    H. Terrones;E. Del Corro;S. Feng;J. M. Poumirol

  • Biocompatibility and toxicological studies of carbon nanotubes doped with nitrogen.

    Carrero-Sanchez Jc;Elías Al;Mancilla R;Arrellín G

  • Longitudinal Cutting of Pure and Doped Carbon Nanotubes to Form Graphitic Nanoribbons Using Metal Clusters as Nanoscalpels

    Ana Laura Elías;Andrés R. Botello-Méndez;David Meneses-Rodríguez;Viviana Jehová González

  • Extraordinary Second Harmonic Generation in Tungsten Disulfide Monolayers

    Corey Janisch;Yuanxi Wang;Ding Ma;Nikhil Mehta

  • Optical identification of sulfur vacancies: Bound excitons at the edges of monolayer tungsten disulfide.

    Victor Carozo;Yuanxi Wang;Kazunori Fujisawa;Bruno R. Carvalho;Bruno R. Carvalho

  • Excited Excitonic States in 1L, 2L, 3L, and Bulk WSe2 Observed by Resonant Raman Spectroscopy

    Elena del Corro;Humberto Terrones;Ana Elias;Cristiano Fantini

  • Dislocation motion and grain boundary migration in two-dimensional tungsten disulphide

    Amin Azizi;Xiaolong Zou;Peter Ercius;Zhuhua Zhang

  • Wetting of mono and few-layered WS2 and MoS2 films supported on Si/SiO2 substrates.

    Philippe K. Chow;Eklavya Singh;Bartolomeu Cruz Viana;Bartolomeu Cruz Viana;Jian Gao

  • CVD-grown monolayered MoS2 as an effective photosensor operating at low-voltage

    Néstor Perea-López;Zhong Lin;Nihar R Pradhan;Agustín Iñiguez-Rábago

  • Synthesis and characterization of long strands of nitrogen-doped single-walled carbon nanotubes

    F. Villalpando-Paez;A. Zamudio;A.L. Elias;H. Son

  • Low-temperature Synthesis of Heterostructures of Transition Metal Dichalcogenide Alloys (WxMo1–xS2) and Graphene with Superior Catalytic Performance for Hydrogen Evolution

    Yu Lei;Srimanta Pakhira;Kazunori Fujisawa;Xuyang Wang

  • Graphene Shape Control by Multistage Cutting and Transfer

    Lijie Ci;Li Song;Deep Jariwala;Ana Laura Elías

Frequent Co-Authors

Mauricio Terrones
Mauricio Terrones Pennsylvania State University
Humberto Terrones
Humberto Terrones Rensselaer Polytechnic Institute
Simin Feng
Simin Feng Tsinghua University
Morinobu Endo
Morinobu Endo Shinshu University
Ruitao Lv
Ruitao Lv Tsinghua University
Saikat Talapatra
Saikat Talapatra Southern Illinois University Carbondale
Pulickel M. Ajayan
Pulickel M. Ajayan Rice University
Vincent H. Crespi
Vincent H. Crespi Pennsylvania State University
Luis Balicas
Luis Balicas Florida State University
Yoong Ahm Kim
Yoong Ahm Kim Chonnam National University

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