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D-Index & Metrics

Materials Science

D-Index
62
Citations
185846
World Ranking
6324
National Ranking
15

Sergey V. Morozov publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sergey V. Morozov sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 323 publications — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Sergey V. Morozov D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sergey V. Morozov sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 62 D-Index — 51st percentile

51% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Sergey V. Morozov is affiliated with the Russian Academy of Sciences in the Russian Federation. Their research is primarily situated at the intersection of engineering and physics, focusing extensively on electrical and electronic engineering, atomic and molecular physics and optics, and materials chemistry. Additional subfields include condensed matter physics and mechanical engineering.

The scientist's work covers multiple topics, prominently featuring graphene research and applications, advanced semiconductor detectors and materials, spectroscopy and laser applications, quantum and electron transport phenomena, topological materials and phenomena, physics of superconductivity and magnetism, and semiconductor quantum structures and devices.

Among recent publications, the following are notable:

  • Electronic phase separation in multilayer rhombohedral graphite, 2020, Nature
  • Electrically Controlled Thermal Radiation from Reduced Graphene Oxide Membranes, 2021, ACS Applied Materials & Interfaces
  • Infrared photodetection in graphene-based heterostructures: bolometric and thermoelectric effects at the tunneling barrier, 2024, npj 2D Materials and Applications
  • Terahertz cyclotron emission from two-dimensional Dirac fermions, 2023, Nature Photonics
  • Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 μm wavelength from HgCdTe quantum wells, 2021, Journal of Applied Physics

Frequent coauthors of Sergey V. Morozov include:

  • Kostya S. Novoselov
  • V. V. Rumyantsev
  • Е. Е. Вдовин
  • V. I. Gavrilenko
  • M. A. Fadeev

The scholar has published regularly in venues such as:

  • Физика и техника полупроводников
  • Semiconductor Science and Technology
  • Journal of Experimental and Theoretical Physics Letters
  • arXiv (Cornell University)
  • npj 2D Materials and Applications

Best Publications

  • Electric Field Effect in Atomically Thin Carbon Films

    Kostya S. Novoselov;Andre K. Geim;Sergey V. Morozov;Da Jiang

  • Two-dimensional gas of massless Dirac fermions in graphene

    K. S. Novoselov;A. K. Geim;S. V. Morozov;D. Jiang

  • Two-dimensional atomic crystals

    K. S. Novoselov;D. Jiang;F. Schedin;T. J. Booth

  • Detection of Individual Gas Molecules Absorbed on Graphene

    F. Schedin;A. K. Geim;S. V. Morozov;D. Jiang

  • Detection of individual gas molecules adsorbed on graphene

    F. Schedin;A. K. Geim;S. V. Morozov;E. W. Hill

  • Control of graphene's properties by reversible hydrogenation: Evidence for graphane

    D. C. Elias;R. R. Nair;T. M. G. Mohiuddin;S. V. Morozov

  • Giant intrinsic carrier mobilities in graphene and its bilayer

    S. V. Morozov;K. S. Novoselov;M. I. Katsnelson;F. Schedin

  • Room-Temperature Quantum Hall Effect in Graphene

    K. S. Novoselov;Z. Jiang;Y. Zhang;S. V. Morozov

  • Field-effect tunneling transistor based on vertical graphene heterostructures.

    L. Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Strong light-matter interactions in heterostructures of atomically thin films.

    Líam Britnell;R. M. Ribeiro;R. M. Ribeiro;A. Eckmann;R. Jalil

  • Unconventional quantum Hall effect and Berry’s phase of 2π in bilayer graphene

    K. S. Novoselov;Edward McCann;S. V. Morozov;Vladimir I. Fal’ko

  • Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect

    Eduardo V. Castro;K. S. Novoselov;S. V. Morozov;N. M. R. Peres

  • Graphene-based liquid crystal device.

    Peter Blake;Paul D. Brimicombe;Rahul R. Nair;Tim J. Booth

  • Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics

    Thanasis Georgiou;Rashid Jalil;Branson D Belle;Liam Britnell

  • Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

    Alexander S. Mayorov;Roman V. Gorbachev;Sergey V. Morozov;Liam Britnell

  • Molecular doping of graphene

    T. O. Wehling;K. S. Novoselov;S. V. Morozov;E. E. Vdovin

  • High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

    Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko

  • Strong suppression of weak localization in graphene.

    S. V. Morozov;K. S. Novoselov;M. I. Katsnelson;F. Schedin

  • Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

    Liam Britnell;Roman V. Gorbachev;Rashid Jalil;Branson D. Belle

  • Dirac cones reshaped by interaction effects in suspended graphene

    D. C. Elias;R. V. Gorbachev;A. S. Mayorov;S. V. Morozov

  • Room Temperature Quantum Hall Effect in Graphene

    Andre Geim;Philip Kim;Kostya Novoselov;Zhigang Jiang

  • Biased bilayer graphene: semiconductor with a gap tunable by electric field effect

    Eduardo V. Castro;J.M.B. Lopes dos Santos;N.M.R. Peres;K.S. Novoselov

  • Detection of Individual Gas Molecules Absorbed on Graphene

    Andre Geim;Kostya Novoselov;Fred Schedin;Sergey Morozov

Frequent Co-Authors

Andre K. Geim
Andre K. Geim University of Manchester
Kostya S. Novoselov
Kostya S. Novoselov National University of Singapore
Laurence Eaves
Laurence Eaves University of Nottingham
Roman Gorbachev
Roman Gorbachev University of Manchester
Mikhail I. Katsnelson
Mikhail I. Katsnelson Radboud University
Vladimir I. Fal'ko
Vladimir I. Fal'ko University of Manchester
Artem Mishchenko
Artem Mishchenko University of Manchester
Irina V. Grigorieva
Irina V. Grigorieva University of Manchester
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Wojciech Knap
Wojciech Knap Warsaw University of Technology

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