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Physics

D-Index
89
Citations
36489
World Ranking
2280
National Ranking
197

Overview

C.T. Foxon is affiliated with the University of Nottingham in the United Kingdom and focuses research efforts primarily within the fields of Materials Science and Physics and Astronomy. The scientist's work covers various subfields, including Materials Chemistry, Atomic and Molecular Physics and Optics, Electronic, Optical and Magnetic Materials, and Civil and Structural Engineering.

The main research topics addressed by Foxon include:

  • 2D Materials and Applications
  • Graphene research and applications
  • Ga2O3 and related materials
  • Strong Light-Matter Interactions
  • Thermal Radiation and Cooling Technologies
  • Semiconductor Quantum Structures and Devices

Foxon has published scholarly articles in notable scientific journals, contributing to the understanding of novel materials and their optical properties. Recent papers include:

  • "Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures" (2021), published in 2D Materials
  • "Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride" (2022), published in Physical Review X

The research output reflects a focus on two-dimensional materials, particularly boron nitride monolayers, and their interactions with graphene, as well as studies of radiative processes in nanomaterials.

Frequent collaborators in Foxon's research include:

  • Christopher J. Mellor
  • L. Eaves
  • С. В. Новиков
  • Peter H. Beton
  • James Wrigley

Publication venues where Foxon's work has appeared are:

  • 2D Materials
  • Physical Review X

Best Publications

  • Quantized conductance of point contacts in a two-dimensional electron gas.

    van Bart Wees;H. van Houten;C.W.J. Beenakker;J.G. Williamson

  • Linewidth dependence of radiative exciton lifetimes in quantum wells

    J. Feldmann;G. Peter;E. O. Göbel;P. Dawson

  • Quantized current in a quantum-dot turnstile using oscillating tunnel barriers.

    L.P. Kouwenhoven;A.T. Johnson;N.C. van der Vaart;C.J.P.M. Harmans

  • Group III nitride semiconductors for short wavelength light-emitting devices

    J W Orton;C T Foxon

  • Mn interstitial diffusion in (ga,mn)as.

    K. W. Edmonds;P. Bogusławski;P. Bogusławski;K. Y. Wang;R. P. Campion

  • Lattice parameters of gallium nitride

    M. Leszczynski;H. Teisseyre;T. Suski;I. Grzegory

  • Prospects for high temperature ferromagnetism in (Ga,Mn)As semiconductors

    T. Jungwirth;K. Y. Wang;J. Mašek;K. W. Edmonds

  • Coherent electron focusing with quantum point contacts in a two-dimensional electron gas

    H. van Houten;C.W.J. Beenakker;J.G. Williamson;M.E.I. Broekaart

  • Zero-dimensional states and single electron charging in quantum dots

    A.T. Johnson;L.P. Kouwenhoven;W. de Jong;N.C. van der Vaart

  • Observation of zero-dimensional states in a one-dimensional electron interferometer.

    van Bart Wees;L.P. Kouwenhoven;C.J.P.M. Harmans;J.G. Williamson

  • High-Curie-temperature Ga1−xMnxAs obtained by resistance-monitored annealing

    K. W. Edmonds;K. Y. Wang;R. P. Campion;A. C. Neumann

  • High Curie temperature GaMnAs obtained by resistance-monitored annealing

    K.W. Edmonds;K.Y. Wang;R.P. Campion;A.C. Neumann

  • Resonant Tunneling Through Two Discrete Energy States.

    N. C. van der Vaart;S. F. Godijn;Y. V. Nazarov;C. J. P. M. Harmans

  • Quantum ballistic and adiabatic electron transport studied with quantum point contacts

    van Bart Wees;L.P. Kouwenhoven;E.M.M. Willems;C.J.P.M. Harmans

  • Single electron charging effects in semiconductor quantum dots

    L. P. Kouwenhoven;N. C. van der Vaart;A. T. Johnson;W. Kool

  • Transport through a finite one-dimensional crystal.

    L.P. Kouwenhoven;F.W.J. Hekking;van Bart Wees;C.J.P.M. Harmans

  • Quantized conductance of magnetoelectric subbands in ballistic point contacts

    van Bart Wees;L.P. Kouwenhoven;H. van Houten;C.W.J. Beenakker

  • Conduction threshold and pinning frequency of magnetically induced Wigner solid.

    F. I. B. Williams;P. A. Wright;R. G. Clark;E. Y. Andrei

  • Time-resolved Raman measurements of intersubband relaxation in GaAs quantum wells.

    M. C. Tatham;J. F. Ryan;C. T. Foxon

  • Optical detection of the integer and fractional quantum Hall effects in GaAs.

    A. J. Turberfield;S. R. Haynes;P. A. Wright;R. A. Ford

Frequent Co-Authors

R. P. Campion
R. P. Campion University of Nottingham
K. W. Edmonds
K. W. Edmonds University of Nottingham
Leo P. Kouwenhoven
Leo P. Kouwenhoven Delft University of Technology
C. W. J. Beenakker
C. W. J. Beenakker Leiden University
Laurens W. Molenkamp
Laurens W. Molenkamp University of Würzburg
B.A. Joyce
B.A. Joyce Imperial College London
Kaiyou Wang
Kaiyou Wang Chinese Academy of Sciences
Jenny Nelson
Jenny Nelson Imperial College London
Tomas Jungwirth
Tomas Jungwirth Czech Academy of Sciences
Dieter Weiss
Dieter Weiss University of Regensburg

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